Showing 1–25 of 25 results for author: Asmar, M M

Photo-induced Multiply Quantized Vortex States in Dirac-like Materials

Authors: Lauren I. Massaro, Connor Meese, Nancy P. Sandler, Mahmoud M. Asmar

Abstract: Subjecting a massive two-dimensional Dirac material to a vortex light beam provides a mechanism for the photo-induction of multiply quantized vortices. Using Floquet theory, we show that electronic vortices, characterized by their total angular momentum, are exclusive to circularly polarized vortex beams. The equations for the driven system at the one photon-resonance are mapped to the Bogoliubov-… ▽ More Subjecting a massive two-dimensional Dirac material to a vortex light beam provides a mechanism for the photo-induction of multiply quantized vortices. Using Floquet theory, we show that electronic vortices, characterized by their total angular momentum, are exclusive to circularly polarized vortex beams. The equations for the driven system at the one photon-resonance are mapped to the Bogoliubov-de Gennes equations of $s$-wave superconductors with multiply quantized vortices. This map** provides valuable analytical tools for the analysis of the system's spectral properties. △ Less

Submitted 1 June, 2024; v1 submitted 13 April, 2024; originally announced April 2024.

Comments: The supplementary material has been added

Evidence of quasi-2D Fermi surface and non-trivial electronic topology in kagome lattice magnet GdV6Sn6 using de Haas van Alphen oscillations

Authors: C. Dhital, G. Pokharel, B. Wilson, I. Kendrick, M. M. Asmar, D. Graf, J. Guerrero-Sanchez, R. Gonzalez Hernandez, S. D. Wilson

Abstract: The shape of the Fermi surface, the effective mass of carriers, and the topologically non-trivial nature of electronic bands of kagome magnet GdV6Sn6 are investigated using de Haas van Alphen (dHvA) oscillations measurements. Our temperature and angle dependent torque magnetometry measurements reveal at least seven different frequencies ranging from ~90 T up to ~9000 T. These frequencies correspon… ▽ More The shape of the Fermi surface, the effective mass of carriers, and the topologically non-trivial nature of electronic bands of kagome magnet GdV6Sn6 are investigated using de Haas van Alphen (dHvA) oscillations measurements. Our temperature and angle dependent torque magnetometry measurements reveal at least seven different frequencies ranging from ~90 T up to ~9000 T. These frequencies correspond to extremal areas of Fermi surface ranging from ~1% up to 50% of the first Brillouin zone, qualitatively consistent with electronic structure calculations. The angle dependent dHvA oscillations frequencies indicate that all pockets of Fermi surface are mostly two-dimensional. We also find evidence of the presence of lighter (0.58 m0) as well as heavier (2.25 m0) electrons through the analysis of the temperature dependence of dominant frequencies, reflecting the features of correlated and Dirac like dispersions in the electronic structure. The estimation of the Berry phase indicates the topologically non-trivial nature of the lowest frequency band containing lighter electrons. This is consistent with the presence of Dirac-like linear dispersion in the electronic structure. △ Less

Submitted 29 June, 2023; originally announced June 2023.

Comments: 20 pages, 11 figures

Floquet-Driven Indirect Exchange Interaction Mediated by Topological Insulator Surface States

Authors: Modi Ke, Mahmoud M. Asmar, Wang-Kong Tse

Abstract: Light drives offer a potential tool for the dynamical control of magnetic interactions in matter. We theoretically investigate the indirect exchange coupling between two parallel chains of magnetic impurities on the surface of a topological insulator, driven by a time-periodic circularly polarized light field in the high-frequency, off-resonant, regime. We derive a closed-form analytic expression… ▽ More Light drives offer a potential tool for the dynamical control of magnetic interactions in matter. We theoretically investigate the indirect exchange coupling between two parallel chains of magnetic impurities on the surface of a topological insulator, driven by a time-periodic circularly polarized light field in the high-frequency, off-resonant, regime. We derive a closed-form analytic expression for the spin susceptibility of the photon-dressed topological insulator surface states and obtain the irradiation dependence of the Ising, Heisenberg, and Dzyaloshinsky-Moriya exchange couplings between the impurity chains. Our results show a two-pronged modification of these exchange couplings by periodic drives. First, the RKKY oscillation period of the exchange couplings can be extended by enhancing the driving strength. Secondly, increasing driving strength enhances the envelope of RKKY oscillations of the Heisenberg-type while suppressing those of the Ising-type and Dzyaloshinsky-Moriya-type. Our work provides useful insights for realizing Floquet engineering of collinear and non-collinear indirect exchange interactions in topological insulating systems. △ Less

Submitted 19 May, 2023; originally announced May 2023.

Comments: 10 pages, 8 figures

Photo-induced Non-collinear Interlayer RKKY Coupling in Bulk Rashba Semiconductors

Authors: Mahmoud M. Asmar, Wang-Kong Tse

Abstract: The interplay between light-matter, spin-orbit, and magnetic interactions allows the investigation of light-induced magnetic phenomena that is otherwise absent without irradiation. We present our analysis of light-driving effects on the interlayer exchange coupling mediated by a bulk Rashba semiconductor in a magnetic multilayer. The collinear magnetic exchange coupling mediated by the photon-dres… ▽ More The interplay between light-matter, spin-orbit, and magnetic interactions allows the investigation of light-induced magnetic phenomena that is otherwise absent without irradiation. We present our analysis of light-driving effects on the interlayer exchange coupling mediated by a bulk Rashba semiconductor in a magnetic multilayer. The collinear magnetic exchange coupling mediated by the photon-dressed spin-orbit coupled electrons of BiTeI develops light-induced oscillation periods and displays new decay powers laws, both of which are enhanced with an increasing light-matter coupling. For magnetic layers with non-collinear magnetization, we find a non-collinear magnetic exchange coupling uniquely generated by light-driving of the multilayer. As the non-collinear magnetic exchange coupling mediated by the electrons of BiTeI is unique to the irradiated system and it is enhanced with increasing light-matter coupling, this effect offers a promising platform of investigation of light-driving effects on magnetic phenomena in spin-orbit coupled systems. △ Less

Submitted 11 May, 2023; originally announced May 2023.

Comments: 12 pages, 7 figures

Local density of state oscillations in laterally heterostructured topological insulator-semiconductor systems

Authors: David J. Alspaugh, D. N. Sheng, Mahmoud M. Asmar

Abstract: We study local density of state (LDOS) oscillations arising from the scattering of electrons at atomic edge defects in topological insulator (TI) surfaces. To create edge scattering on the surface of a TI, we assume that half of its surface is covered with a semiconductor. In addition to modifying the TI states in the covered half, the presence of the semiconductor leads to a localized edge potent… ▽ More We study local density of state (LDOS) oscillations arising from the scattering of electrons at atomic edge defects in topological insulator (TI) surfaces. To create edge scattering on the surface of a TI, we assume that half of its surface is covered with a semiconductor. In addition to modifying the TI states in the covered half, the presence of the semiconductor leads to a localized edge potential at the vacuum-semiconductor boundary. We study the induced LDOS by imposing time-reversal (TR) invariance and current conservation across the boundary. Additionally, we explore how the scattering of TI junctions with dissimilar spin textures and anisotropic Fermi velocities affect the modulations of the LDOS away from the junction edge. In all cases, for energies close to the Dirac point, we find that the decay envelope of the LDOS oscillations is insensitive to the scattering at the atomic edge defect, with a decay power given by $x^{-3/2}$. Quantitative differences in the amplitude of these oscillations depend on the details of the interface and the spin textures, while the period of the oscillations is defined by the size of the Fermi surface. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Comments: 12 pages, 5 figures

Kekulé Induced Valley Birefringence and Skew Scattering in Graphene

Authors: Elias Andrade, Ramon Carrillo-Bastos, Mahmoud M. Asmar, Gerardo G. Naumis

Abstract: In graphene, a Kekulé-Y bond texture modifies the electronic band structure generating two concentric Dirac cones with different Fermi velocities lying in the Γ-point in reciprocal space. The energy dispersion results in different group velocities for each isospin component at a given energy. This energy spectrum combined with the negative refraction index in p-n junctions, allows the emergence of… ▽ More In graphene, a Kekulé-Y bond texture modifies the electronic band structure generating two concentric Dirac cones with different Fermi velocities lying in the Γ-point in reciprocal space. The energy dispersion results in different group velocities for each isospin component at a given energy. This energy spectrum combined with the negative refraction index in p-n junctions, allows the emergence of an electronic analog of optical birefringence in graphene. We characterize the valley birefringence produced by a circularly symmetric Kekulé patterned and gated region using the scattering approach. We found caustics with two cusps separated in space by a distance dependent on the Kekulé interaction and that provides a measure of its strength. Then, at low carrier concentration we find a non-vanishing skew cross section, showing the asymmetry in the scattering of electrons around the axis of the incoming flux. This effect is associated with the appearance of the valley Hall effect as electrons with opposite valley polarization are deflected towards opposite directions. △ Less

Submitted 4 August, 2022; originally announced August 2022.

Comments: 7 pages, 4 figures

Andreev spectroscopy of nonhelical spin textures in topological insulators

Authors: David J. Alspaugh, Mahmoud M. Asmar, Daniel E. Sheehy, Ilya Vekhter

Abstract: We study how nonhelical spin textures affect the proximity-induced superconductivity of topological insulator (TI)-superconductor (SC) interface states. In particular we calculate the conductance of lateral heterojunctions which comprise a TI surface that is only partially covered by a superconducting material. Interface potentials at the TI-SC interface may lead to a Fermi velocity and spin textu… ▽ More We study how nonhelical spin textures affect the proximity-induced superconductivity of topological insulator (TI)-superconductor (SC) interface states. In particular we calculate the conductance of lateral heterojunctions which comprise a TI surface that is only partially covered by a superconducting material. Interface potentials at the TI-SC interface may lead to a Fermi velocity and spin texture mismatch between the two regions of the lateral heterojunction. By enforcing the hermiticity of the total Hamiltonian, we derive the boundary conditions and calculate the conductance of the structure in both the normal and superconducting state. The total Andreev conductance is calculated for both $s$-wave and spin-triplet parent SCs, and for several examples of nonhelical spin textures which lead to different Fermi surface mismatches between the two planar regions of the heterojunction. We find that for spin-triplet SCs, nonzero conductance signatures only appear for certain combinations of nonhelical spin textures and parent superconducting material. △ Less

Submitted 16 August, 2021; originally announced August 2021.

Particle-hole asymmetry and quantum confinement effects on the magneto-optical response of topological insulator thin-films

Authors: Mahmoud M. Asmar, Gaurav Gupta, Wang-Kong Tse

Abstract: Intrinsically broken symmetries in the bulk of topological insulators (TIs) are manifested in their surface states. In spite of particle-hole asymmetry in TIs, it has often been assumed that their surface states are characterized by a particle-hole symmetric Dirac energy dispersion. In this work we demonstrate that the effect of particle-hole asymmetry is essential to correctly describe the energy… ▽ More Intrinsically broken symmetries in the bulk of topological insulators (TIs) are manifested in their surface states. In spite of particle-hole asymmetry in TIs, it has often been assumed that their surface states are characterized by a particle-hole symmetric Dirac energy dispersion. In this work we demonstrate that the effect of particle-hole asymmetry is essential to correctly describe the energy spectrum and the magneto-optical response in TIs thin-films. In thin-films of TIs with a substantial degree of particle-hole symmetry breaking, such as Sb$_2$Te$_3$, the longitudinal optical conductivity displays absorption peaks arising from optical transitions between bulk and surface Landau levels for low photon energies. The transition energies between the bulk and surface Landau levels exhibit clearly discernable signatures from those between surface Landau levels due to their distinct magnetic field dependence. Bulk contributions to the magneto-optical conductivity in a TI thin-film are enhanced via one type of do** while being suppressed by the other. This asymmetric dependence on type of do** aids in revealing the particle-hole asymmetry in TI thin-films. △ Less

Submitted 25 May, 2021; originally announced May 2021.

Comments: 10 pages and 6 figures

Impurity Screening and Friedel Oscillations in Floquet-driven Two-dimensional Metals

Authors: Mahmoud M. Asmar, Wang-Kong Tse

Abstract: We develop a theory for the non-equilibrium screening of a charged impurity in a two-dimensional electron system under a strong time-periodic drive. Our analysis of the time-averaged polarization function and dielectric function reveals that Floquet driving modifies the screened impurity potential in two main regimes. In the weak drive regime, the time-averaged screened potential exhibits unconven… ▽ More We develop a theory for the non-equilibrium screening of a charged impurity in a two-dimensional electron system under a strong time-periodic drive. Our analysis of the time-averaged polarization function and dielectric function reveals that Floquet driving modifies the screened impurity potential in two main regimes. In the weak drive regime, the time-averaged screened potential exhibits unconventional Friedel oscillations with multiple spatial periods contributed by a principal period modulated by higher-order periods, which are due to the emergence of additional Kohn anomalies in the polarization function. In the strong drive regime, the time-averaged impurity potential becomes almost unscreened and does not exhibit Friedel oscillations. This tunable Friedel oscillations is a result of the dynamic gating effect of the time-dependent driving field on the two-dimensional electron system. △ Less

Submitted 25 May, 2021; originally announced May 2021.

Comments: 15 pages and 3 figures

Non-Equilibrium RKKY Interaction in Irradiated Graphene

Authors: Modi Ke, Mahmoud M. Asmar, Wang-Kong Tse

Abstract: We demonstrate that the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in graphene can be strongly modified by a time-periodic driving field even in the weak drive regime. This effect is due to the opening of a dynamical band gap at the Dirac points when graphene is exposed to circularly polarized light. Using Keldysh-Floquet Green's functions, we develop a theoretical framework to calculate the… ▽ More We demonstrate that the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in graphene can be strongly modified by a time-periodic driving field even in the weak drive regime. This effect is due to the opening of a dynamical band gap at the Dirac points when graphene is exposed to circularly polarized light. Using Keldysh-Floquet Green's functions, we develop a theoretical framework to calculate the time-averaged RKKY coupling under weak periodic drives and show that its magnitude in undoped graphene can be decreased controllably by increasing the driving strength, while mostly maintaining its ferromagnetic or antiferromagnetic character. In doped graphene, we find RKKY oscillations with a period that is tunable by the driving field. When a sufficiently strong drive is turned on that brings the Fermi level completely within the dynamically opened gap, the behavior of the RKKY coupling changes qualitatively from that of doped to undoped irradiated graphene. △ Less

Submitted 10 August, 2020; v1 submitted 23 April, 2020; originally announced April 2020.

Comments: 20 pages,8 figures

Journal ref: Phys. Rev. Research 2, 033228 (2020)

Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy

Authors: Yuxuan Jiang, Mahmoud M. Asmar, Xingyue Han, Mykhalo Ozerov, Dmitry Smirnov, Maryam Salehi, Seongshik Oh, Zhigang Jiang, Wang-Kong Tse, Liang Wu

Abstract: When surface states (SSs) form in topological insulators (TIs), they inherit the properties of bulk bands, including the electron-hole (e-h) asymmetry but with much more profound impacts. Here, via combining magneto-infrared spectroscopy with theoretical analysis, we show that e-h asymmetry significantly modifies the SS electronic structures when interplaying with the quantum confinement effect. C… ▽ More When surface states (SSs) form in topological insulators (TIs), they inherit the properties of bulk bands, including the electron-hole (e-h) asymmetry but with much more profound impacts. Here, via combining magneto-infrared spectroscopy with theoretical analysis, we show that e-h asymmetry significantly modifies the SS electronic structures when interplaying with the quantum confinement effect. Compared to the case without e-h asymmetry, the SSs now bear not only a band asymmetry as that in the bulk but also a shift of the Dirac point relative to the bulk bands and a reduction of the hybridization gap up to 70%. Our results signify the importance of e-h asymmetry in band engineering of TIs in the thin film limit. △ Less

Submitted 14 June, 2020; v1 submitted 2 April, 2020; originally announced April 2020.

Comments: 10 pages,6 figures, including supporting information. Submission version. Added two references and revised acknowledgment. Accepted in Nano Lett

Journal ref: Nano Lett. 20 (6), 4588-4593 (2020)

Floquet Control of Indirect Exchange Interaction in Periodically Driven Two-Dimensional Electron Systems

Authors: Mahmoud M. Asmar, Wang-Kong Tse

Abstract: We present a theory for the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction mediated by a two-dimensional (2D) electron system subjected to periodic driving. This is demonstrated for a heterostructure consisting of two ferromagnets laterally sandwiching the 2D metallic spacer. Our calculations reveal new non-analytic features in the spin susceptibility. For weak light-matter coupling, the RKKY in… ▽ More We present a theory for the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction mediated by a two-dimensional (2D) electron system subjected to periodic driving. This is demonstrated for a heterostructure consisting of two ferromagnets laterally sandwiching the 2D metallic spacer. Our calculations reveal new non-analytic features in the spin susceptibility. For weak light-matter coupling, the RKKY interaction shows oscillations with a period tunable by the light amplitude and frequency. For stronger light-matter coupling, the interaction becomes non-oscillatory and remains purely ferromagnetic. △ Less

Submitted 31 March, 2020; originally announced March 2020.

Conductance of gated junctions as a probe of topological interface states

Authors: Eklavya Thareja, Ilya Vekhter, Mahmoud M. Asmar

Abstract: Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge of these properties is essential for applications of topological compounds, but direct access to them in the interface geometry is difficult. We show that cond… ▽ More Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge of these properties is essential for applications of topological compounds, but direct access to them in the interface geometry is difficult. We show that conductance of a gated double junction at the surface of a topological insulator exhibits oscillations and a quasi-linear decay as a function of gate voltage in different regimes. These give the values for the quasiparticle velocities along and normal to the junction in the interface region, and determine the symmetry of the topological interface states. The results are insensitive to the boundary conditions at the junction. △ Less

Submitted 25 September, 2020; v1 submitted 24 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. B 102, 125308 (2020)

Interlayer RKKY Coupling in Bulk Rashba Semiconductors under Topological Phase Transition

Authors: Mahmoud M. Asmar, Wang-Kong Tse

Abstract: The bulk Rashba semiconductors BiTeX (X=I, Cl and Br) with intrinsically enhanced Rashba spin-orbit coupling provide a new platform for investigation of spintronic and magnetic phenomena in materials. We theoretically investigate the interlayer exchange interaction between two ferromagnets deposited on opposite surfaces of a bulk Rashba semiconductor BiTeI in its trivial and topological insulator… ▽ More The bulk Rashba semiconductors BiTeX (X=I, Cl and Br) with intrinsically enhanced Rashba spin-orbit coupling provide a new platform for investigation of spintronic and magnetic phenomena in materials. We theoretically investigate the interlayer exchange interaction between two ferromagnets deposited on opposite surfaces of a bulk Rashba semiconductor BiTeI in its trivial and topological insulator phases. In the trivial phase BiTeI, we find that for ferromagnets with a magnetization orthogonal to the interface, the exchange coupling is reminiscent of that of a conventional three-dimensional metal. Remarkably, ferromagnets with a magnetization parallel to the interface display a magnetic exchange qualitatively different from that of conventional three-dimensional metal due to the spin-orbit coupling. In this case, the interlayer exchange interaction acquires two periods of oscillations and decays as the inverse of the thickness of the BiTeI layer. For topological BiTeI, the magnetic exchange interaction becomes mediated only by the helical surface states and acts between the one-dimensional spin chains at the edges of the sample. The surface state-mediated interlayer exchange interaction allows for the coupling of ferromagnets with non-collinear magnetization and displays a decay power different from that of trivial BiTeI, allowing the detection of the topological phase transition in this material. Our work provides insights into the magnetic properties of these newly discovered materials and their possible functionalization. △ Less

Submitted 5 July, 2019; v1 submitted 15 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. B 100, 014410 (2019)

Topological phases and twisting of graphene on a dichalcogenide monolayer

Authors: Abdulrhman M. Alsharari, Mahmoud M. Asmar, Sergio E. Ulloa

Abstract: Depositing monolayer graphene on a transition metal dichalcogenide (TMD) semiconductor substrate has been shown to change the dynamics of the electronic states in graphene, inducing spin orbit coupling (SOC) and staggered potential effects. Theoretical studies on commensurate supercells have demonstrated the appearance of interesting phases, as different materials and relative gate voltages are ap… ▽ More Depositing monolayer graphene on a transition metal dichalcogenide (TMD) semiconductor substrate has been shown to change the dynamics of the electronic states in graphene, inducing spin orbit coupling (SOC) and staggered potential effects. Theoretical studies on commensurate supercells have demonstrated the appearance of interesting phases, as different materials and relative gate voltages are applied. Here we address the effects of the real incommensurability between lattices by implementing a continuum model approach that does not require small-period supercells. The approach allows us to study the role of possible relative twists of the layers, and verify that the SOC transfer is robust to twists, in agreement with observations. We characterize the nature of the different phases by studying an effective Hamiltonian that fully describes the graphene-TMD heterostructure. We find the system supports topologically non-trivial phases over a wide range of parameter ranges, which require the dominance of the intrinsic SOC over the staggered and Rashba potentials. This tantalizing result suggests the possible experimental realization of a tunable quantum spin Hall phase under suitable conditions. We estimate that most TMDs used to date likely result in weak intrinsic SOC that would not drive the heterostructure into topologically non-trivial phases. Additional means to induce a larger intrinsic SOC, such as strain fields or heavy metal intercalation may be required. △ Less

Submitted 20 August, 2018; originally announced August 2018.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 98, 195129 (2018)

Proximity-Induced Superconductivity at Non-Helical Topological Insulator Interfaces

Authors: David J. Alspaugh, Mahmoud M. Asmar, Daniel E. Sheehy, Ilya Vekhter

Abstract: We study how non-helical spin textures at the boundary between a topological insulator (TI) and a superconductor (SC) affect the proximity-induced superconductivity of the TI interface state. We consider TIs coupled to both spin-singlet and spin-triplet SCs, and show that for the spin-triplet parent SCs the resulting order parameter induced onto the interface state sensitively depends on the symme… ▽ More We study how non-helical spin textures at the boundary between a topological insulator (TI) and a superconductor (SC) affect the proximity-induced superconductivity of the TI interface state. We consider TIs coupled to both spin-singlet and spin-triplet SCs, and show that for the spin-triplet parent SCs the resulting order parameter induced onto the interface state sensitively depends on the symmetries which are broken at the TI-SC boundary. For chiral spin-triplet parent SCs, we find that nodal proximity-induced superconductivity emerges when there is broken twofold rotational symmetry which forces the spins of the non-helical topological states to tilt away from the interface plane. We furthermore show that the Andreev conductance of lateral heterostructures joining TI-vacuum and TI-SC interfaces yields experimental signatures of the reduced symmetries of the interface states. △ Less

Submitted 12 July, 2018; originally announced July 2018.

Comments: 5 pages, 2 figures

Journal ref: Phys. Rev. B 98, 104516 (2018)

Proximity-induced topological phases in bilayer graphene

Authors: Abdulrhman M. Alsharari, Mahmoud M. Asmar, Sergio E. Ulloa

Abstract: We study the band structure of phases induced by depositing bilayer graphene on a transition metal dichalcogenide monolayer. Tight-binding and low-energy effective Hamiltonian calculations show that it is possible to induce topologically nontrivial phases that should exhibit spin Hall effect in these systems. We classify bulk insulating phases through calculation of the Z$_2$ invariant, which uneq… ▽ More We study the band structure of phases induced by depositing bilayer graphene on a transition metal dichalcogenide monolayer. Tight-binding and low-energy effective Hamiltonian calculations show that it is possible to induce topologically nontrivial phases that should exhibit spin Hall effect in these systems. We classify bulk insulating phases through calculation of the Z$_2$ invariant, which unequivocally identifies the topology of the structure. The study of these and similar hybrid systems under applied gate voltage opens the possibility for tunable topological structures in real experimental systems. △ Less

Submitted 12 February, 2018; originally announced February 2018.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 97, 241104 (2018)

Topological phases of topological insulator thin films

Authors: Mahmoud M. Asmar, Daniel E. Sheehy, Ilya Vekhter

Abstract: We study the properties of a thin film of topological insulator material. We treat the coupling between helical states at opposite surfaces of the film in the properly-adapted tunneling approximation, and show that the tunneling matrix element oscillates as function of both the film thickness and the momentum in the plane of the film for Bi$_2$Se$_3$ and Bi$_2$Te$_3$. As a result, while the magnit… ▽ More We study the properties of a thin film of topological insulator material. We treat the coupling between helical states at opposite surfaces of the film in the properly-adapted tunneling approximation, and show that the tunneling matrix element oscillates as function of both the film thickness and the momentum in the plane of the film for Bi$_2$Se$_3$ and Bi$_2$Te$_3$. As a result, while the magnitude of the matrix element at the center of the surface Brillouin Zone gives the gap in the energy spectrum, the sign of the matrix element uniquely determines the topological properties of the film, as demonstrated by explicitly computing the pseudospin textures and the Chern number. We find a sequence of transitions between topological and non-topological phases, separated by semimetallic states, as the film thickness varies. In the topological phase the edge states of the film always exist but only carry a spin current if the edge potentials break particle-hole symmetry. The edge states decay very slowly away from the boundary in Bi$_2$Se$_3$, making Bi$_{2}$Te$_{3}$, where this scale is shorter, a more promising candidate for the observation of these states. Our results hold for free-standing films as well as heterostructures with large-gap insulators. △ Less

Submitted 6 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. B 97, 075419 (2018)

Minimal Geometry for Valley Filtering in Graphene

Authors: Mahmoud M. Asmar, Sergio E. Ulloa

Abstract: The possibility to effect valley splitting of an electronic current in graphene represents the essential component in the new field of valleytronics in such two-dimensional materials. Based on a symmetry analysis of the scattering matrix, we show that if the spatial distribution of multiple potential scatterers breaks mirror symmetry about the axis of incoming electrons, then a splitting of the cu… ▽ More The possibility to effect valley splitting of an electronic current in graphene represents the essential component in the new field of valleytronics in such two-dimensional materials. Based on a symmetry analysis of the scattering matrix, we show that if the spatial distribution of multiple potential scatterers breaks mirror symmetry about the axis of incoming electrons, then a splitting of the current between two valleys is observed. This leads to the appearance of the valley Hall effect. We illustrate the effect of mirror symmetry breaking in a minimal system of two symmetric impurities, demonstrating the splitting between valleys via the differential cross sections and non-vanishing skew parameter. We further discuss the role that these effects may play in transport experiments. △ Less

Submitted 25 October, 2017; v1 submitted 14 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. B 96, 201407 (2017)

Interface symmetry and spin control in topological insulator-semiconductor heterostructures

Authors: Mahmoud M. Asmar, Daniel E. Sheehy, Ilya Vekhter

Abstract: Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface states appearing at the planar boundary between a topologically-trivial semiconductor (SE) and a TI are controlled by the symmetry of the interface. In contrast to… ▽ More Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface states appearing at the planar boundary between a topologically-trivial semiconductor (SE) and a TI are controlled by the symmetry of the interface. In contrast to the well-studied helical Dirac surface states, SE-TI interface states exhibit elliptical contours of constant energy and complex spin textures with broken helicity. We derive a general effective Hamiltonian for SE-TI junctions, and propose experimental signatures such as an out of plane spin accumulation under a transport current and the opening of a spectral gap that depends on the direction of an applied in-plane magnetic field. △ Less

Submitted 18 November, 2016; originally announced November 2016.

Journal ref: Phys. Rev. B 95, 241115 (2017)

Mass inversion in graphene by proximity to dichalcogenide monolayer

Authors: Abdulrhman M. Alsharari, Mahmoud M. Asmar, Sergio E. Ulloa

Abstract: Proximity effects resulting from depositing a graphene layer on a TMD substrate layer change the dynamics of the electronic states in graphene, inducing spin orbit coupling (SOC) and staggered potential effects. An effective Hamiltonian that describes different symmetry breaking terms in graphene, while preserving time reversal invariance, shows that an inverted mass band gap regime is possible. T… ▽ More Proximity effects resulting from depositing a graphene layer on a TMD substrate layer change the dynamics of the electronic states in graphene, inducing spin orbit coupling (SOC) and staggered potential effects. An effective Hamiltonian that describes different symmetry breaking terms in graphene, while preserving time reversal invariance, shows that an inverted mass band gap regime is possible. The competition of different perturbation terms causes a transition from an inverted mass phase to a staggered gap in the bilayer heterostructure, as seen in its phase diagram. A tight-binding calculation of the bilayer validates the effective model parameters. A relative gate voltage between the layers may produce such phase transition in experimentally accessible systems. The phases are characterized in terms of Berry curvature and valley Chern numbers, demonstrating that the system may exhibit quantum spin Hall and valley Hall effects. △ Less

Submitted 2 August, 2016; originally announced August 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 94, 241106 (2016)

Symmetry breaking effects on spin and electronic transport in graphene

Authors: Mahmoud M. Asmar, Sergio E. Ulloa

Abstract: The decoration of graphene samples with adatoms or nanoparticles leads to the enhancement of spin-orbit interactions as well as to the introduction of symmetry-breaking effects that could have drastic effects on spin and electronic transport phenomena. We present an analysis based on symmetry considerations and examine the impact on the scattering matrix for graphene systems containing defects tha… ▽ More The decoration of graphene samples with adatoms or nanoparticles leads to the enhancement of spin-orbit interactions as well as to the introduction of symmetry-breaking effects that could have drastic effects on spin and electronic transport phenomena. We present an analysis based on symmetry considerations and examine the impact on the scattering matrix for graphene systems containing defects that enhance spin-orbit interactions, while conserving the electronic total angular momentum. We show that the appearance and dominance of skew scattering, and the related observation of valley and/or spin Hall effect in decorated graphene samples, suggests the set of symmetries that adatom perturbations should satisfy. We further show that detailed measurements of the transport and elastic times as a function of carrier concentration make it possible to not only extract the strength of the spin-orbit interaction, as suggested before, but also obtain the amplitude of the symmetry-breaking terms introduced. To examine how different terms would affect measurements, we also present calculations for typical random distributions of impurities with different perturbations, illustrating the detailed energy dependence of different observables △ Less

Submitted 10 April, 2015; v1 submitted 9 February, 2015; originally announced February 2015.

Journal ref: Physical Review B 91, 165407 (2015)

Spin Orbit Interaction and Isotropic Electronic Transport in Graphene

Authors: Mahmoud M. Asmar, Sergio E. Ulloa

Abstract: Broken symmetries in graphene affect the massless nature of its charge carriers. We present an analysis of scattering by defects in graphene in the presence of spin-orbit interactions (SOIs). A characteristic constant ratio ($\simeq 2$) of the transport to elastic times for massless electrons signals the anisotropy of the scattering. We show that SOIs lead to a drastic decrease of this ratio, espe… ▽ More Broken symmetries in graphene affect the massless nature of its charge carriers. We present an analysis of scattering by defects in graphene in the presence of spin-orbit interactions (SOIs). A characteristic constant ratio ($\simeq 2$) of the transport to elastic times for massless electrons signals the anisotropy of the scattering. We show that SOIs lead to a drastic decrease of this ratio, especially at low carrier concentrations, while the scattering becomes increasingly isotropic. As the strength of the SOI determines the energy (carrier concentration) where this drop is more evident, this effect could help evaluate these interactions through transport measurements. △ Less

Submitted 5 November, 2013; originally announced November 2013.

Journal ref: Phys. Rev. Lett. 112, 136602 (2014)

Emergence of photoswitchable states in a graphene-azobenzene-Au platform

Authors: Emanuela Margapoti, Philipp Strobel, Mahmoud M Asmar, Max Seifert, Juan Li, Matthias Sachsenhauser, Oezlem Ceylan, Carlos-Andres Palma, Johannes V. Barth, jose garrido, Anna Cattani-Scholz, Sergio E. Ulloa, Jonathan Finley

Abstract: The perfect transmission of charge carriers through potential barriers in graphene (Klein tunneling) is a direct consequence of the Dirac equation that governs the low-energy carrier dynamics. As a result, localized states do not exist in unpatterned graphene, but quasi-bound states \emph{can} occur for potentials with closed integrable dynamics. Here, we report the observation of resonance states… ▽ More The perfect transmission of charge carriers through potential barriers in graphene (Klein tunneling) is a direct consequence of the Dirac equation that governs the low-energy carrier dynamics. As a result, localized states do not exist in unpatterned graphene, but quasi-bound states \emph{can} occur for potentials with closed integrable dynamics. Here, we report the observation of resonance states in photo-switchable self-assembled molecular(SAM)-graphene hybrid. Conductive AFM measurements performed at room temperature reveal strong current resonances, the strength of which can be reversibly gated \textit{on-} and \textit{off-} by optically switching the molecular conformation of the mSAM. Comparisons of the voltage separation between current resonances ($\sim 70$--$120$ mV) with solutions of the Dirac equation indicate that the radius of the gating potential is $\sim 7 \pm 2$ nm with a strength $\geq 0.5$ eV. Our results and methods might provide a route toward \emph{optically programmable} carrier dynamics and transport in graphene nano-materials. △ Less

Submitted 1 December, 2014; v1 submitted 2 August, 2013; originally announced August 2013.

Journal ref: Nano letters 14 (12), 6823-6827, 2014

Rashba Spin Orbit Interaction and Birefringent Electron Optics in Graphene

Authors: Mahmoud M. Asmar, Sergio E. Ulloa

Abstract: Electron optics exploits the analogies between rays in geometrical optics and electron trajectories, leading to interesting insights and potential applications. Graphene, with its two-dimensionality and photon-like behavior of its charge carriers, is the perfect candidate for the exploitation of electron optics. We show that a circular gate-controlled region in the presence of Rashba spin-orbit in… ▽ More Electron optics exploits the analogies between rays in geometrical optics and electron trajectories, leading to interesting insights and potential applications. Graphene, with its two-dimensionality and photon-like behavior of its charge carriers, is the perfect candidate for the exploitation of electron optics. We show that a circular gate-controlled region in the presence of Rashba spin-orbit interaction in graphene may indeed behave as a Veselago electronic lens but with two different indices of refraction. We demonstrate that this birefringence results in complex caustics patterns for a circular gate, selective focusing of different spins, and the possible direct measurement of the Rashba coupling strength in scanning probe experiments. △ Less

Submitted 27 November, 2012; v1 submitted 20 September, 2012; originally announced September 2012.

Journal ref: Phys. Rev. B 87, 075420 (2013)