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Band structure engineering using a moiré polar substrate
Authors:
Xirui Wang,
Cheng Xu,
Samuel Aronson,
Daniel Bennett,
Nisarga Paul,
Philip J. D. Crowley,
Clément Collignon,
Kenji Watanabe,
Takashi Taniguchi,
Raymond Ashoori,
Efthimios Kaxiras,
Yang Zhang,
Pablo Jarillo-Herrero,
Kenji Yasuda
Abstract:
Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moiré substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic el…
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Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moiré substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic electrostatic potential on a target two-dimensional (2D) material placed on top. As a proof of concept, we use Bernal bilayer graphene as the target material. The resulting modulation of the band structure appears as superlattice resistance peaks, tunable by varying the twist angle, and Hofstadter butterfly physics under a magnetic field. Additionally, we demonstrate the tunability of the moiré potential by altering the dielectric thickness underneath the twisted BN. Finally, we find that near-60°-twisted bilayer BN provides a unique platform for studying the moiré structural effect without the contribution from electrostatic moiré potentials. Tunable moiré polar substrates may serve as versatile platforms to engineer the electronic, optical, and mechanical properties of 2D materials and van der Waals heterostructures.
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Submitted 6 May, 2024;
originally announced May 2024.
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Time, momentum, and energy resolved pump-probe tunneling spectroscopy of two-dimensional electron systems
Authors:
H. M. Yoo,
M. Korkusinski,
D. Miravet,
K. W. Baldwin,
K. West,
L. Pfeiffer,
P. Hawrylak,
R. C. Ashoori
Abstract:
Real-time probing of electrons can uncover intricate relaxation mechanisms and many-body interactions hidden in strongly correlated materials. While experimenters have used ultrafast optical pump-probe methods in bulk materials, laser heating and insensitivity below the surface prevent their application to encapsulated low-dimensional electron systems at millikelvin temperatures, home to numerous…
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Real-time probing of electrons can uncover intricate relaxation mechanisms and many-body interactions hidden in strongly correlated materials. While experimenters have used ultrafast optical pump-probe methods in bulk materials, laser heating and insensitivity below the surface prevent their application to encapsulated low-dimensional electron systems at millikelvin temperatures, home to numerous intriguing electronic phases. Here, we introduce time, momentum, and energy resolved pump-probe tunneling spectroscopy (Tr-MERTS). The method allows the injection of electrons at particular energies and observation of their subsequent decay in energy-momentum space. Using Tr-MERTS, we visualize electronic decay processes in Landau levels with lifetimes up to tens of microseconds. Although most observed features agree with simple energy-relaxation, we discover an unexpected splitting in the nonequilibrium energy spectrum in the vicinity of a ferromagnetic state. An exact diagonalization study of the system suggests that the splitting arises from a maximally spin-polarized higher energy state, distinct from a conventional equilibrium skyrmion. Furthermore, we observe time-dependent relaxation of the splitting, which we attribute to single-flipped spins forming topological spin textures. These results establish Tr-MERTS as a powerful tool for studying the dynamics and properties of a two-dimensional electronic system beyond equilibrium.
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Submitted 24 April, 2023;
originally announced April 2023.
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Superconductivity and strong interactions in a tunable moiré quasiperiodic crystal
Authors:
Aviram Uri,
Sergio C. de la Barrera,
Mallika T. Randeria,
Daniel Rodan-Legrain,
Trithep Devakul,
Philip J. D. Crowley,
Nisarga Paul,
Kenji Watanabe,
Takashi Taniguchi,
Ron Lifshitz,
Liang Fu,
Raymond C. Ashoori,
Pablo Jarillo-Herrero
Abstract:
Electronic states in quasiperiodic crystals generally preclude a Bloch description, rendering them simultaneously fascinating and enigmatic. Owing to their complexity and relative scarcity, quasiperiodic crystals are underexplored relative to periodic and amorphous structures. Here, we introduce a new type of highly tunable quasiperiodic crystal easily assembled from periodic components. By twisti…
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Electronic states in quasiperiodic crystals generally preclude a Bloch description, rendering them simultaneously fascinating and enigmatic. Owing to their complexity and relative scarcity, quasiperiodic crystals are underexplored relative to periodic and amorphous structures. Here, we introduce a new type of highly tunable quasiperiodic crystal easily assembled from periodic components. By twisting three layers of graphene with two different twist angles, we form two moiré patterns with incommensurate moiré unit cells. In contrast to many common quasiperiodic structures that are defined on the atomic scale, the quasiperiodicity in our system is defined on moiré length scales of several nanometers. This novel "moiré quasiperiodic crystal" allows us to tune the chemical potential and thus the electronic system between a periodic-like regime at low energies and a strongly quasiperiodic regime at higher energies, the latter hosting a large density of weakly dispersing states. Interestingly, in the quasiperiodic regime we observe superconductivity near a flavor-symmetry-breaking phase transition, the latter indicative of the important role electronic interactions play in that regime. The prevalence of interacting phenomena in future systems with in situ tunability is not only useful for the study of quasiperiodic systems, but it may also provide insights into electronic ordering in related periodic moiré crystals. We anticipate that extending this new platform to engineer quasiperiodic crystals by varying the number of layers and twist angles, and by using different two-dimensional components, will lead to a new family of quantum materials to investigate the properties of strongly interacting quasiperiodic crystals.
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Submitted 1 February, 2023;
originally announced February 2023.
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Cascade of isospin phase transitions in Bernal bilayer graphene at zero magnetic field
Authors:
Sergio C. de la Barrera,
Samuel Aronson,
Zhiren Zheng,
Kenji Watanabe,
Takashi Taniguchi,
Qiong Ma,
Pablo Jarillo-Herrero,
Raymond Ashoori
Abstract:
Emergent phenomena arising from the collective behavior of electrons is generally expected when Coulomb interactions dominate over the kinetic energy, as in delocalized quasiparticles in highly degenerate flat bands. Bernal-stacked bilayer graphene intrinsically supports a pair of flat bands predicted to host a variety of spontaneous broken-symmetry states arising from van Hove singularities and a…
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Emergent phenomena arising from the collective behavior of electrons is generally expected when Coulomb interactions dominate over the kinetic energy, as in delocalized quasiparticles in highly degenerate flat bands. Bernal-stacked bilayer graphene intrinsically supports a pair of flat bands predicted to host a variety of spontaneous broken-symmetry states arising from van Hove singularities and a four-fold spin-valley (isospin) degeneracy. Here, we show that ultra-clean samples of bilayer graphene display a cascade of symmetry-broken states with spontaneous and spin and valley ordering at zero magnetic field. Using capacitive sensing in a dual-gated geometry, we tune the carrier density and electric displacement field independently to explore the phase space of transitions and probe the character of the isospin order. Itinerant ferromagnetic states emerge near the conduction and valence band edges with complete spin and valley polarization and a high degree of displacement field tunability. At larger hole densities, two-fold degenerate quantum oscillations manifest in an additional broken symmetry state that is enhanced by the application of an in-plane magnetic field. Both types of symmetry-broken states display enhanced layer polarization at low temperatures, suggesting a coupling to the layer pseudospin degree of freedom in the electronic wavefunctions. Notably, the zero-field spontaneous symmetry breaking reported here emerges in the absence of a moiré superlattice and is intrinsic to natural graphene bilayers. Thus, we demonstrate that the tunable bands of bilayer graphene represent a related, but distinct approach to produce flat band collective behavior, complementary to engineered moiré structures.
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Submitted 26 October, 2021;
originally announced October 2021.
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Strong interlayer charge transfer due to exciton condensation in an electrically-isolated GaAs quantum well bilayer
Authors:
Joonho Jang,
Heun Mo Yoo,
Loren N. Pfeiffer,
Kenneth W. West,
K. W. Baldwin,
Raymond C. Ashoori
Abstract:
We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of the gating voltage. At smaller gate voltages, the bilayer is fully electrically isolated from external electrodes by thick insulating barriers. This design perm…
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We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of the gating voltage. At smaller gate voltages, the bilayer is fully electrically isolated from external electrodes by thick insulating barriers. This design permits full control of the total and differential densities of two coupled 2D electron systems. The floating bilayer design provides a unique approach for studying systems inaccessible by simple transport measurements. It also provides the ability to measure the charge transfer between the layers, even when the in-plane resistivities of the 2D systems diverge. We measure the capacitance and inter-layer tunneling spectra of the QW bilayer with independent control of the top and bottom layer electron densities. Our measurements display strongly enhanced inter-layer tunneling current at the total filling factor of 1, a signature of exciton condensation of a strongly interlayer-correlated bilayer system. With fully tunable densities of individual layers, the floating bilayer QW system provides a versatile platform to access previously unavailable information on the quantum phases in electron bilayer systems.
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Submitted 11 March, 2021;
originally announced March 2021.
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Correlated double-electron additions at the edge of a two-dimensional electronic system
Authors:
Ahmet Demir,
Neal Staley,
Samuel Aronson,
Spencer Tomarken,
Ken West,
Kirk Baldwin,
Loren Pfeiffer,
Raymond Ashoori
Abstract:
We create laterally large and low disorder quantum well based quantum dots to study single electron additions to two dimensional electron systems (2DES). Electrons tunnel into these dots across an AlGaAs tunnel barrier from a single $n+$ electrode. Using single-electron capacitance spectroscopy in a dilution refrigerator, we identify capacitance peaks for the addition of the first electron to a do…
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We create laterally large and low disorder quantum well based quantum dots to study single electron additions to two dimensional electron systems (2DES). Electrons tunnel into these dots across an AlGaAs tunnel barrier from a single $n+$ electrode. Using single-electron capacitance spectroscopy in a dilution refrigerator, we identify capacitance peaks for the addition of the first electron to a dot and record subsequent peaks in the addition spectrum up to occupancies of thousands of electrons. Here, we report two remarkable phenomena that occur in the filling factor range $ν=2$ to $ν=5$ while selectively probing electron additions to the edge states of the dot: (1) Coulomb blockade peaks arise from the entrance of two electrons rather than one; (2) at and near filling factor 5/2 and at fixed gate voltage, these double-height peaks appear uniformly with a periodicity of $h/2e$. At other filling factors in the range $ν=2$ to $ν=5$, the mean periodicity for the twice-height electron peaks remains $h/2e$, but the twice-height peaks are instead further bunched into pairs of double-height peaks, with pairs spaced $h/e$ apart. The unusual two-electron Coulomb blockade peaks suggest a novel pair tunneling effect that involves electron correlations that arise in the quantum dot, with spectra at $ν=5/2$ identical to those previously only seen in superconducting dots.
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Submitted 25 January, 2021; v1 submitted 27 January, 2020;
originally announced January 2020.
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Complete spin phase diagram of the fractional quantum Hall liquid
Authors:
H. M. Yoo,
K. W. Baldwin,
K. West,
L. Pfeiffer,
R. C. Ashoori
Abstract:
Study of the ground-state electronic spin-polarization can permit discovery and identification of novel correlated phases in the quantum Hall (QH) system. It can thus determine the potential usefulness of QH states for quantum computing. However, prior measurements involving optical and NMR techniques may perturb the system away from delicate ground-states. Here, we present spin-resolved pulsed tu…
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Study of the ground-state electronic spin-polarization can permit discovery and identification of novel correlated phases in the quantum Hall (QH) system. It can thus determine the potential usefulness of QH states for quantum computing. However, prior measurements involving optical and NMR techniques may perturb the system away from delicate ground-states. Here, we present spin-resolved pulsed tunneling (SRPT) that precisely determines the complete phase diagram of the ground-state spin-polarization as a function of magnetic field (B) and filling factor (ν). We observe fully-polarized ν = 5/2 and 8/3 states at very small B, suggesting strong deviation from the weakly-interacting composite-fermion model that largely successfully describes our phase diagram for the lowest Landau level. The results establish SRPT as a powerful technique for investigating correlated electron phenomena.
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Submitted 2 October, 2019;
originally announced October 2019.
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Electronic Compressibility of Magic-Angle Graphene Superlattices
Authors:
S. L. Tomarken,
Y. Cao,
A. Demir,
K. Watanabe,
T. Taniguchi,
P. Jarillo-Herrero,
R. C. Ashoori
Abstract:
We report the first electronic compressibility measurements of magic-angle twisted bilayer graphene. The evolution of the compressibility with carrier density offers insights into the interaction-driven ground state that have not been accessible in prior transport and tunneling studies. From capacitance measurements, we determine chemical potential as a function of carrier density and find the wid…
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We report the first electronic compressibility measurements of magic-angle twisted bilayer graphene. The evolution of the compressibility with carrier density offers insights into the interaction-driven ground state that have not been accessible in prior transport and tunneling studies. From capacitance measurements, we determine chemical potential as a function of carrier density and find the widths of the energy gaps at fractional filling of the moiré lattice. In the electron-doped regime, we observe unexpectedly large gaps at quarter- and half-filling and strong electron-hole asymmetry. Moreover, we measure a $\mathord{\sim}35\,\textrm{meV}$ mini-bandwidth that is much wider than most theoretical estimates. Finally, we explore the field dependence up to the quantum Hall regime and observe significant differences from transport measurements.
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Submitted 24 July, 2019; v1 submitted 25 March, 2019;
originally announced March 2019.
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Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
Authors:
Yuan Cao,
Valla Fatemi,
Ahmet Demir,
Shiang Fang,
Spencer L. Tomarken,
Jason Y. Luo,
J. D. Sanchez-Yamagishi,
K. Watanabe,
T. Taniguchi,
E. Kaxiras,
R. C. Ashoori,
P. Jarillo-Herrero
Abstract:
Van der Waals (vdW) heterostructures are an emergent class of metamaterials comprised of vertically stacked two-dimensional (2D) building blocks, which provide us with a vast tool set to engineer their properties on top of the already rich tunability of 2D materials. One of the knobs, the twist angle between different layers, plays a crucial role in the ultimate electronic properties of a vdW hete…
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Van der Waals (vdW) heterostructures are an emergent class of metamaterials comprised of vertically stacked two-dimensional (2D) building blocks, which provide us with a vast tool set to engineer their properties on top of the already rich tunability of 2D materials. One of the knobs, the twist angle between different layers, plays a crucial role in the ultimate electronic properties of a vdW heterostructure and does not have a direct analog in other systems such as MBE-grown semiconductor heterostructures. For small twist angles, the moiré pattern produced by the lattice misorientation creates a long-range modulation. So far, the study of the effect of twist angles in vdW heterostructures has been mostly concentrated in graphene/hexagonal boron nitride (h-BN) twisted structures, which exhibit relatively weak interlayer interaction due to the presence of a large bandgap in h-BN. Here we show that when two graphene sheets are twisted by an angle close to the theoretically predicted 'magic angle', the resulting flat band structure near charge neutrality gives rise to a strongly-correlated electronic system. These flat bands exhibit half-filling insulating phases at zero magnetic field, which we show to be a Mott-like insulator arising from electrons localized in the moiré superlattice. These unique properties of magic-angle twisted bilayer graphene (TwBLG) open up a new playground for exotic many-body quantum phases in a 2D platform made of pure carbon and without magnetic field. The easy accessibility of the flat bands, the electrical tunability, and the bandwidth tunability though twist angle may pave the way towards more exotic correlated systems, such as unconventional superconductors or quantum spin liquids.
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Submitted 1 February, 2018;
originally announced February 2018.
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Full Momentum and Energy Resolved Spectral Function of a 2D Electronic System
Authors:
Joonho Jang,
Heun Mo Yoo,
Loren Pfeiffer,
Ken West,
K. W. Baldwin,
Raymond Ashoori
Abstract:
The single-particle spectral function measures the density of electronic states (DOS) in a material as a function of both momentum and energy, providing central insights into phenomena such as superconductivity and Mott insulators. While scanning tunneling microscopy (STM) and other tunneling methods have provided partial spectral information, until now only angle-resolved photoemission spectrosco…
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The single-particle spectral function measures the density of electronic states (DOS) in a material as a function of both momentum and energy, providing central insights into phenomena such as superconductivity and Mott insulators. While scanning tunneling microscopy (STM) and other tunneling methods have provided partial spectral information, until now only angle-resolved photoemission spectroscopy (ARPES) has permitted a comprehensive determination of the spectral function of materials in both momentum and energy. However, ARPES operates only on electronic systems at the material surface and cannot work in the presence of applied magnetic fields. Here, we demonstrate a new method for determining the full momentum and energy resolved electronic spectral function of a two-dimensional (2D) electronic system embedded in a semiconductor. In contrast with ARPES, the technique remains operational in the presence of large externally applied magnetic fields and functions for electronic systems with zero electrical conductivity or with zero electron density. It provides a direct high-resolution and high-fidelity probe of the dispersion and dynamics of the interacting 2D electron system. By ensuring the system of interest remains under equilibrium conditions, we uncover delicate signatures of many-body effects involving electron-phonon interactions, plasmons, polarons, and a novel phonon analog of the vacuum Rabi splitting in atomic systems.
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Submitted 1 March, 2017; v1 submitted 6 January, 2017;
originally announced January 2017.
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Ferromagnetism and conductivity in atomically thin SrRuO3
Authors:
H. Boschker,
T. Harada,
T. Asaba,
R. Ashoori,
A. V. Boris,
H. Hilgenkamp,
C. R. Hughes,
M. E. Holtz,
L. Li,
D. A. Muller,
H. Nair,
P. Reith,
X. Renshaw Wang,
D. G. Schlom,
A. Soukiassian,
J. Mannhart
Abstract:
Atomically thin ferromagnetic and conducting electron systems are highly desired for spintronics, because they can be controlled with both magnetic and electric fields. We present (SrRuO3)1-(SrTiO3)5 superlattices and single-unit-cell-thick SrRuO3 samples that are capped with SrTiO3. We achieve samples of exceptional quality. In these samples, the electron systems comprise only a single RuO2 plane…
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Atomically thin ferromagnetic and conducting electron systems are highly desired for spintronics, because they can be controlled with both magnetic and electric fields. We present (SrRuO3)1-(SrTiO3)5 superlattices and single-unit-cell-thick SrRuO3 samples that are capped with SrTiO3. We achieve samples of exceptional quality. In these samples, the electron systems comprise only a single RuO2 plane. We observe conductivity down to 50 mK, a ferromagnetic state with a Curie temperature of 25 K, and signals of magnetism persisting up to approximately 100 K.
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Submitted 11 February, 2019; v1 submitted 28 September, 2016;
originally announced September 2016.
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Direct measurement of discrete valley and orbital quantum numbers in a multicomponent quantum Hall system
Authors:
B. M. Hunt,
J. I. A. Li,
A. A. Zibrov,
L. Wang,
T. Taniguchi,
K. Watanabe,
J. Hone,
C. R. Dean,
M. Zaletel,
R. C. Ashoori,
A. F. Young
Abstract:
Strongly interacting two dimensional electron systems (2DESs) host a complex landscape of broken symmetry states. The possible ground states are further expanded by internal degrees of freedom such as spin or valley-isospin. While direct probes of spin in 2DESs were demonstrated two decades ago, the valley quantum number has only been probed indirectly in semiconductor quantum wells, graphene mono…
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Strongly interacting two dimensional electron systems (2DESs) host a complex landscape of broken symmetry states. The possible ground states are further expanded by internal degrees of freedom such as spin or valley-isospin. While direct probes of spin in 2DESs were demonstrated two decades ago, the valley quantum number has only been probed indirectly in semiconductor quantum wells, graphene mono- and bilayers, and transition-metal dichalcogenides. Here, we present the first direct experimental measurement of valley polarization in a two dimensional electron system, effected via the direct map** of the valley quantum number onto the layer polarization in bilayer graphene at high magnetic fields. We find that the layer polarization evolves in discrete steps across 32 electric field-tuned phase transitions between states of different valley, spin, and orbital polarization. Our data can be fit by a model that captures both single particle and interaction induced orbital, valley, and spin anisotropies, providing the most complete model of this complex system to date. Among the newly discovered phases are theoretically unanticipated orbitally polarized states stabilized by skew interlayer hop**. The resulting roadmap to symmetry breaking in bilayer graphene paves the way for deterministic engineering of fractional quantum Hall states, while our layer-resolved technique is readily extendable to other two dimensional materials where layer polarization maps to the valley or spin quantum numbers, providing an essential direct probe that is a prerequisite for manipulating these new quantum degrees of freedom.
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Submitted 1 June, 2017; v1 submitted 21 July, 2016;
originally announced July 2016.
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Sharp Tunneling Resonance from the Vibrations of an Electronic Wigner Crystal
Authors:
Joonho Jang,
Benjamin Hunt,
Loren N. Pfeiffer,
Kenneth W. West,
Raymond C. Ashoori
Abstract:
Photoemission and tunneling spectroscopies measure the energies at which single electrons can be added to or removed from an electronic system. Features observed in such spectra have revealed electrons coupling to vibrational modes of ions both in solids and in individual molecules. Here we report the discovery of a sharp resonance in the tunneling spectrum of a 2D electron system. Its behavior su…
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Photoemission and tunneling spectroscopies measure the energies at which single electrons can be added to or removed from an electronic system. Features observed in such spectra have revealed electrons coupling to vibrational modes of ions both in solids and in individual molecules. Here we report the discovery of a sharp resonance in the tunneling spectrum of a 2D electron system. Its behavior suggests that it originates from vibrational modes, not involving ionic motion, but instead arising from vibrations of spatial ordering of the electrons themselves. In a two-dimensional electronic system at very low temperatures and high magnetic fields, electrons can either condense into a variety of quantum Hall phases or arrange themselves into a highly ordered Wigner crystal lattice. Such spatially ordered phases of electrons are often electrically insulating and delicate and have proven very challenging to probe with conventional methods. Using a unique pulsed tunneling method capable of probing electron tunneling into insulating phases, we observe a sharp peak with dependencies on energy and other parameters that fit to models for vibrations of a Wigner crystal. The remarkable sharpness of the structure presents strong evidence of the existence of a Wigner crystal with long correlation length.
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Submitted 9 February, 2017; v1 submitted 21 April, 2016;
originally announced April 2016.
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Observation of Helical Edge States and Fractional Quantum Hall Effect in a Graphene Electron-hole Bilayer
Authors:
J. D. Sanchez-Yamagishi,
J. Y. Luo,
A. F. Young,
B. Hunt,
K. Watanabe,
T. Taniguchi,
R. C. Ashoori,
P. Jarillo-Herrero
Abstract:
A quantum Hall edge state provides a rich foundation to study electrons in 1-dimension (1d) but is limited to chiral propagation along a single direction. Here, we demonstrate a versatile platform to realize new 1d systems made by combining quantum Hall edge states of opposite chiralities in a graphene electron-hole bilayer. Using this approach, we engineer helical 1d edge conductors where the cou…
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A quantum Hall edge state provides a rich foundation to study electrons in 1-dimension (1d) but is limited to chiral propagation along a single direction. Here, we demonstrate a versatile platform to realize new 1d systems made by combining quantum Hall edge states of opposite chiralities in a graphene electron-hole bilayer. Using this approach, we engineer helical 1d edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong nonlocal transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Moreover, we investigate these electron-hole bilayers in the fractional quantum Hall regime, where we observe conduction through fractional and integer edge states of opposite chiralities, paving the way towards the realization of 1d helical systems with fractional quantum statistics.
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Submitted 22 February, 2016;
originally announced February 2016.
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Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice
Authors:
Valla Fatemi,
Benjamin Hunt,
Hadar Steinberg,
Stephen L. Eltinge,
Fahad Mahmood,
Nicholas P. Butch,
Kenji Watanabe,
Takashi Taniguchi,
Nuh Gedik,
Ray Ashoori,
Pablo Jarillo-Herrero
Abstract:
We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all devices the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between t…
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We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all devices the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between the surface states. A charging model allows us to use the penetrating electric field as a measurement of the inter-surface capacitance $C_{TI}$ and the surface state energy-density relationship $μ$(n), which is found to be consistent with independent ARPES measurements. At high magnetic fields, increased field penetration through the surface states is observed, strongly suggestive of the opening of a surface state band gap due to broken time-reversal symmetry.
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Submitted 2 October, 2014;
originally announced October 2014.
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Torque magnetometry of an amorphous-alumina/strontium-titanate interface
Authors:
S. L. Tomarken,
A. F. Young,
S. W. Lee,
R. G. Gordon,
R. C. Ashoori
Abstract:
We report torque magnetometry measurements of an oxide heterostructure consisting of an amorphous Al$_2$O$_3$ thin film grown on a crystalline SrTiO$_3$ substrate ($a$-AO/STO) by atomic layer deposition. We find a torque response that resembles previous studies of crystalline LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterointerfaces, consistent with strongly anisotropic magnetic ordering in the plane of the…
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We report torque magnetometry measurements of an oxide heterostructure consisting of an amorphous Al$_2$O$_3$ thin film grown on a crystalline SrTiO$_3$ substrate ($a$-AO/STO) by atomic layer deposition. We find a torque response that resembles previous studies of crystalline LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterointerfaces, consistent with strongly anisotropic magnetic ordering in the plane of the interface. Unlike crystalline LAO, amorphous Al$_2$O$_3$ is nonpolar, indicating that planar magnetism at an oxide interface is possible without the strong internal electric fields generated within the polarization catastrophe model. We discuss our results in the context of current theoretical efforts to explain magnetism in crystalline LAO/STO.
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Submitted 3 December, 2014; v1 submitted 10 September, 2014;
originally announced September 2014.
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Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state
Authors:
A. F. Young,
J. D. Sanchez-Yamagishi,
B. Hunt,
S. H. Choi,
K. Watanabe,
T. Taniguchi,
R. C. Ashoori,
P. Jarillo-Herrero
Abstract:
Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials such as single molecules, nanowires, and graphene. Recently, a new paradigm has emerged with the advent of symmetry-protected surface states on the boundary of topological insulators, enabling the creation of electronic sys…
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Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials such as single molecules, nanowires, and graphene. Recently, a new paradigm has emerged with the advent of symmetry-protected surface states on the boundary of topological insulators, enabling the creation of electronic systems with novel properties. For example, time reversal symmetry (TRS) endows the massless charge carriers on the surface of a three-dimensional topological insulator with helicity, locking the orientation of their spin relative to their momentum. Weakly breaking this symmetry generates a gap on the surface, resulting in charge carriers with finite effective mass and exotic spin textures. Analogous manipulations of the one-dimensional boundary states of a two-dimensional topological insulator are also possible, but have yet to be observed in the leading candidate materials. Here, we demonstrate experimentally that charge neutral monolayer graphene displays a new type of quantum spin Hall (QSH) effect, previously thought to exist only in TRS topological insulators, when it is subjected to a very large magnetic field angled with respect to the graphene plane. Unlike in the TRS case, the QSH presented here is protected by a spin-rotation symmetry that emerges as electron spins in a half-filled Landau level are polarized by the large in-plane magnetic field. The properties of the resulting helical edge states can be modulated by balancing the applied field against an intrinsic antiferromagnetic instability, which tends to spontaneously break the spin-rotation symmetry. In the resulting canted antiferromagnetic (CAF) state, we observe transport signatures of gapped edge states, which constitute a new kind of one-dimensional electronic system with tunable band gap and associated spin-texture.
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Submitted 18 July, 2013;
originally announced July 2013.
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Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure
Authors:
B. Hunt,
J. D. Sanchez-Yamagishi,
A. F. Young,
K. Watanabe,
T. Taniguchi,
P. Moon,
M. Koshino,
P. Jarillo-Herrero,
R. C. Ashoori
Abstract:
Van der Waals heterostructures comprise a new class of artificial materials formed by stacking atomically-thin planar crystals. Here, we demonstrate band structure engineering of a van der Waals heterostructure composed of a monolayer graphene flake coupled to a rotationally-aligned hexagonal boron nitride substrate. The spatially-varying interlayer atomic registry results both in a local breaking…
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Van der Waals heterostructures comprise a new class of artificial materials formed by stacking atomically-thin planar crystals. Here, we demonstrate band structure engineering of a van der Waals heterostructure composed of a monolayer graphene flake coupled to a rotationally-aligned hexagonal boron nitride substrate. The spatially-varying interlayer atomic registry results both in a local breaking of the carbon sublattice symmetry and a long-range moiré superlattice potential in the graphene. This interplay between short- and long-wavelength effects results in a band structure described by isolated superlattice minibands and an unexpectedly large band gap at charge neutrality, both of which can be tuned by varying the interlayer alignment. Magnetocapacitance measurements reveal previously unobserved fractional quantum Hall states reflecting the massive Dirac dispersion that results from broken sublattice symmetry. At ultra-high fields, integer conductance plateaus are observed at non-integer filling factors due to the emergence of the Hofstadter butterfly in a symmetry-broken Landau level.
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Submitted 27 March, 2013;
originally announced March 2013.
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Coexistence of Magnetic Order and Two-dimensional Superconductivity at LaAlO$_3$/SrTiO$_3$ Interfaces
Authors:
Lu Li,
C. Richter,
J. Mannhart,
R. C. Ashoori
Abstract:
A two dimensional electronic system with novel electronic properties forms at the interface between the insulators LaAlO$_3$ and SrTiO$_3$. Samples fabricated until now have been found to be either magnetic or superconducting, depending on growth conditions. We combine transport measurements with high-resolution magnetic torque magnetometry and report here evidence of magnetic ordering of the two-…
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A two dimensional electronic system with novel electronic properties forms at the interface between the insulators LaAlO$_3$ and SrTiO$_3$. Samples fabricated until now have been found to be either magnetic or superconducting, depending on growth conditions. We combine transport measurements with high-resolution magnetic torque magnetometry and report here evidence of magnetic ordering of the two-dimensional electron liquid at the interface. The magnetic ordering exists from well below the superconducting transition to up to 200 K, and is characterized by an in-plane magnetic moment. Our results suggest that there is either phase separation or coexistence between magnetic and superconducting states. The coexistence scenario would point to an unconventional superconducting phase in the ground state.
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Submitted 1 May, 2011;
originally announced May 2011.
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Observations of Plasmarons in a System of Massive Electrons
Authors:
O. E. Dial,
R. C. Ashoori,
L. N. Pfeiffer,
K. W. West
Abstract:
Calculations of the single particle density of states (SPDOS) of electron liquids have long predicted that there exist two distinct charged excitations: the usual quasiparticle consisting of an electron or hole screened by a correlation hole, and a "plasmaron" consisting of a hole resonantly bound to real plasmons in the Fermi sea(1,2). Using tunneling spectroscopy to measure the SPDOS of a two-di…
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Calculations of the single particle density of states (SPDOS) of electron liquids have long predicted that there exist two distinct charged excitations: the usual quasiparticle consisting of an electron or hole screened by a correlation hole, and a "plasmaron" consisting of a hole resonantly bound to real plasmons in the Fermi sea(1,2). Using tunneling spectroscopy to measure the SPDOS of a two-dimensional electronic system, we demonstrate the first detection of the plasmaron in a system in which electrons have mass. We monitor the evolution of the plasmaron with applied magnetic field and discover unpredicted "magnetoplasmarons" which appear in spectra as negative index Landau levels. These sharp features corresponding to long-lived quasiparticles appear at high energies where SPDOS structure is ordinarily broadened by electron-electron interactions.
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Submitted 2 September, 2010;
originally announced September 2010.
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Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO$_3$/SrTiO$_3$ interfaces
Authors:
Lu Li,
C. Richter,
S. Paetel,
T. Kopp,
J. Mannhart,
R. C. Ashoori
Abstract:
Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conduc…
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Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions.
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Submitted 11 July, 2010; v1 submitted 14 June, 2010;
originally announced June 2010.
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Anomalous structure in the single particle spectrum of the fractional quantum Hall effect
Authors:
O. E. Dial,
R. C. Ashoori,
L. N. Pfeiffer,
K. W. West
Abstract:
The two-dimensional electron system (2DES) is a unique laboratory for the physics of interacting particles. Application of a large magnetic field produces massively degenerate quantum levels known as Landau levels. Within a Landau level the kinetic energy of the electrons is suppressed, and electron-electron interactions set the only energy scale. Coulomb interactions break the degeneracy of the L…
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The two-dimensional electron system (2DES) is a unique laboratory for the physics of interacting particles. Application of a large magnetic field produces massively degenerate quantum levels known as Landau levels. Within a Landau level the kinetic energy of the electrons is suppressed, and electron-electron interactions set the only energy scale. Coulomb interactions break the degeneracy of the Landau levels and can cause the electrons to order into complex ground states. In the high energy single particle spectrum of this system, we observe salient and unexpected structure that extends across a wide range of Landau level filling fractions. The structure appears only when the 2DES is cooled to very low temperature, indicating that it arises from delicate ground state correlations. We characterize this structure by its evolution with changing electron density and applied magnetic field. We present two possible models for understanding these observations. Some of the energies of the features agree qualitatively with what might be expected for composite Fermions, which have proven effective for interpreting other experiments in this regime. At the same time, a simple model with electrons localized on ordered lattice sites also generates structure similar to those observed in the experiment. Neither of these models alone is sufficient to explain the observations across the entire range of densities measured. The discovery of this unexpected prominent structure in the single particle spectrum of an otherwise thoroughly studied system suggests that there exist core features of the 2DES that have yet to be understood.
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Submitted 20 May, 2010;
originally announced May 2010.
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High Resolution Spectroscopy of Two-Dimensional Electron Systems
Authors:
O. E. Dial,
R. C. Ashoori,
L. N. Pfeiffer,
K. W. West
Abstract:
Spectroscopic methods involving the sudden injection or ejection of electrons in materials are a powerful probe of electronic structure and interactions. These techniques, such as photoemission and tunneling, yield measurements of the "single particle" density of states (SPDOS) spectrum of a system. The SPDOS is proportional to the probability of successfully injecting or ejecting an electron in…
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Spectroscopic methods involving the sudden injection or ejection of electrons in materials are a powerful probe of electronic structure and interactions. These techniques, such as photoemission and tunneling, yield measurements of the "single particle" density of states (SPDOS) spectrum of a system. The SPDOS is proportional to the probability of successfully injecting or ejecting an electron in these experiments. It is equal to the number of electronic states in the system able to accept an injected electron as a function of its energy and is among the most fundamental and directly calculable quantities in theories of highly interacting systems. However, the two-dimensional electron system (2DES), host to remarkable correlated electron states such as the fractional quantum Hall effect, has proven difficult to probe spectroscopically. Here we present an improved version of time domain capacitance spectroscopy (TDCS) that now allows us to measure the SPDOS of a 2DES with unprecedented fidelity and resolution. Using TDCS, we perform measurements of a cold 2DES, providing the first direct measurements of the single-particle exchange-enhanced spin gap and single particle lifetimes in the quantum Hall system, as well as the first observations of exchange splitting of Landau levels not at the Fermi surface. The measurements reveal the difficult to reach and beautiful structure present in this highly correlated system far from the Fermi surface.
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Submitted 11 July, 2007;
originally announced July 2007.
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The Density of States in the Two-Dimensional Electron Gas and Quantum Dots (Ph.D. thesis, Cornell University, January 1991)
Authors:
R. C. Ashoori
Abstract:
This thesis describes capacitance and tunneling experiments performed on two-dimensional electron gas (2DEG) and quantum dot systems. It develops a system of equations that allow determination, by means of capacitance measurements, of the electronic density of states, the electron density, and the chemical potential in a 2DEG. The thesis describes the use of these techniques in the observation o…
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This thesis describes capacitance and tunneling experiments performed on two-dimensional electron gas (2DEG) and quantum dot systems. It develops a system of equations that allow determination, by means of capacitance measurements, of the electronic density of states, the electron density, and the chemical potential in a 2DEG. The thesis describes the use of these techniques in the observation of a magnetic field induced energy gap to tunneling in the 2DEG and the single electron addition spectrum in arrays of quantum dots.
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Submitted 27 July, 2006;
originally announced July 2006.
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Imaging Transport Resonances in the Quantum Hall Effect
Authors:
G. A. Steele,
R. C. Ashoori,
L. N. Pfeiffer,
K. W. West
Abstract:
We use a scanning capacitance probe to image transport in the quantum Hall system. Applying a DC bias voltage to the tip induces a ring-shaped incompressible strip (IS) in the 2D electron system (2DES) that moves with the tip. At certain tip positions, short-range disorder in the 2DES creates a quantum dot island in the IS. These islands enable resonant tunneling across the IS, enhancing its con…
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We use a scanning capacitance probe to image transport in the quantum Hall system. Applying a DC bias voltage to the tip induces a ring-shaped incompressible strip (IS) in the 2D electron system (2DES) that moves with the tip. At certain tip positions, short-range disorder in the 2DES creates a quantum dot island in the IS. These islands enable resonant tunneling across the IS, enhancing its conductance by more than four orders of magnitude. The images provide a quantitative measure of disorder and suggest resonant tunneling as the primary mechanism for transport across ISs.
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Submitted 4 August, 2005; v1 submitted 15 June, 2005;
originally announced June 2005.
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Modeling Subsurface Charge Accumulation Images of a Quantum Hall Liquid
Authors:
S. H. Tessmer,
G. Finkelstein,
P. I. Glicofridis,
R. C. Ashoori
Abstract:
Subsurface Charge Accumulation imaging is a cryogenic scanning probe technique that has recently been used to spatially probe incompressible strips formed in a two-dimensional electron system (2DES) at high magnetic fields. In this paper, we present detailed numerical modeling of these data. At a basic level, the method produces results that agree well with the predictions of models based on sim…
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Subsurface Charge Accumulation imaging is a cryogenic scanning probe technique that has recently been used to spatially probe incompressible strips formed in a two-dimensional electron system (2DES) at high magnetic fields. In this paper, we present detailed numerical modeling of these data. At a basic level, the method produces results that agree well with the predictions of models based on simple circuit elements. Moreover, the modeling method is sufficiently advanced to simulate the spatially resolved measurements. By comparing directly the simulations to the experimentally measured data, we can extract quantitatively local electronic features of the 2DES. In particular, we deduce the electron density of states inside the incompressible strips and electrical resistance across them.
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Submitted 15 March, 2002;
originally announced March 2002.
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Direct observation of the charging of a 2D electron gas through an incompressible strip in the quantum Hall regime
Authors:
P. I. Glicofridis,
G. Finkelstein,
R. C. Ashoori,
M. Shayegan
Abstract:
Using charge accumulation imaging, we measure the charge flow across an incompressible strip and follow its evolution with magnetic field. The strip runs parallel to the edge of a gate deposited on the sample and forms at positions where an exact number of integer Landau levels is filled. An RC model of charging fits the data well and enables us to determine the longitudinal resistance of the st…
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Using charge accumulation imaging, we measure the charge flow across an incompressible strip and follow its evolution with magnetic field. The strip runs parallel to the edge of a gate deposited on the sample and forms at positions where an exact number of integer Landau levels is filled. An RC model of charging fits the data well and enables us to determine the longitudinal resistance of the strip. Surprisingly, we find that the strip becomes more resistive as its width decreases.
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Submitted 24 October, 2001; v1 submitted 21 October, 2001;
originally announced October 2001.
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Topographic Map** of the Quantum Hall Liquid using a Few-Electron Bubble
Authors:
G. Finkelstein,
P. I. Glicofridis,
R. C. Ashoori,
M. Shayegan
Abstract:
A scanning probe technique was used to obtain a high-resolution map of the random electrostatic potential inside the quantum Hall liquid. A sharp metal tip, scanned above a semiconductor surface, sensed charges in an embedded two-dimensional electron gas. Under quantum Hall effect conditions, applying a positive voltage to the tip locally enhanced the 2D electron density and created a ``bubble''…
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A scanning probe technique was used to obtain a high-resolution map of the random electrostatic potential inside the quantum Hall liquid. A sharp metal tip, scanned above a semiconductor surface, sensed charges in an embedded two-dimensional electron gas. Under quantum Hall effect conditions, applying a positive voltage to the tip locally enhanced the 2D electron density and created a ``bubble'' of electrons in an otherwise unoccupied Landau level. As the tip scanned along the sample surface, the bubble followed underneath. The tip sensed the motions of single electrons entering or leaving the bubble in response to changes in the local 2D electrostatic potential.
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Submitted 18 July, 2000;
originally announced July 2000.
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Localization in Artificial Disorder - Two Coupled Quantum Dots
Authors:
M. Brodsky,
N. B. Zhitenev,
R. C. Ashoori,
L. N. Pfeiffer,
K. W. West
Abstract:
Using Single Electron Capacitance Spectroscopy, we study electron additions in quantum dots containing two potential minima separated by a shallow barrier. Analysis of addition spectra in magnetic field allows us to distinguish whether electrons are localized in either potential minimum or delocalized over the entire dot. We demonstrate that high magnetic field abruptly splits up a low-density d…
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Using Single Electron Capacitance Spectroscopy, we study electron additions in quantum dots containing two potential minima separated by a shallow barrier. Analysis of addition spectra in magnetic field allows us to distinguish whether electrons are localized in either potential minimum or delocalized over the entire dot. We demonstrate that high magnetic field abruptly splits up a low-density droplet into two smaller fragments, each residing in a potential minimum. An unexplained cancellation of electron repulsion between electrons in these fragments gives rise to paired electron additions.
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Submitted 31 January, 2000;
originally announced January 2000.
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The Localization-Delocalization Transition in Quantum Dots
Authors:
N. B. Zhitenev,
M. Brodsky,
R. C. Ashoori,
L. N. Pfeiffer,
K. W. West
Abstract:
Single-electron capacitance spectroscopy precisely measures the energies required to add individual electrons to a quantum dot. The spatial extent of electronic wavefunctions is probed by investigating the dependence of these energies on changes in the dot confining potential. For low electron densities, electrons occupy distinct spatial sites localized within the dot. At higher densities, the e…
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Single-electron capacitance spectroscopy precisely measures the energies required to add individual electrons to a quantum dot. The spatial extent of electronic wavefunctions is probed by investigating the dependence of these energies on changes in the dot confining potential. For low electron densities, electrons occupy distinct spatial sites localized within the dot. At higher densities, the electrons become delocalized, and all wavefunctions are spread over the full dot area. Near the delocalization transition, the last remaining localized states exist at the perimeter of the dot. Unexpectedly, these electrons appear to bind with electrons in the dot center.
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Submitted 8 December, 1999;
originally announced December 1999.
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Imaging of Low Compressibility Strips in the Quantum Hall Liquid
Authors:
G. Finkelstein,
P. I. Glicofridis,
S. H. Tessmer,
R. C. Ashoori,
M. R. Melloch
Abstract:
Using Subsurface Charge Accumulation scanning microscopy we image strips of low compressibility corresponding to several integer Quantum Hall filling factors. We study in detail the strips at Landau level filling factors $ν=$ 2 and 4. The observed strips appear significantly wider than predicted by theory. We present a model accounting for the discrepancy by considering a disorder-induced nonzer…
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Using Subsurface Charge Accumulation scanning microscopy we image strips of low compressibility corresponding to several integer Quantum Hall filling factors. We study in detail the strips at Landau level filling factors $ν=$ 2 and 4. The observed strips appear significantly wider than predicted by theory. We present a model accounting for the discrepancy by considering a disorder-induced nonzero density of states in the cyclotron gap.
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Submitted 5 October, 1999;
originally announced October 1999.
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Tunneling into Ferromagnetic Quantum Hall States: Observation of a Spin Bottleneck
Authors:
H. B. Chan,
R. C. Ashoori,
L. N. Pfeiffer,
K. W. West
Abstract:
We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (nu = 1, 3 and 1/3) tunneling occurs at two distinct rates that differ by up to 2 orders of…
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We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (nu = 1, 3 and 1/3) tunneling occurs at two distinct rates that differ by up to 2 orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.
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Submitted 26 May, 1999;
originally announced May 1999.
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Subsurface charge accumulation imaging of a quantum Hall liquid
Authors:
S. H. Tessmer,
P. I. Glicofridis,
R. C. Ashoori,
L. S. Levitov,
M. R. Melloch
Abstract:
The unusual properties of two-dimensional electron systems that give rise to the quantum Hall effect have prompted the development of new microscopic models for electrical conduction. The bulk properties of the quantum Hall effect have also been studied experimentally using a variety of probes including transport, photoluminescence, magnetization, and capacitance measurements. However, the fact…
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The unusual properties of two-dimensional electron systems that give rise to the quantum Hall effect have prompted the development of new microscopic models for electrical conduction. The bulk properties of the quantum Hall effect have also been studied experimentally using a variety of probes including transport, photoluminescence, magnetization, and capacitance measurements. However, the fact that two-dimensional electron systems typically exist some distance (about 100 nm) beneath the surface of the host semiconductor has presented an important obstacle to more direct measurements of microscopic electronic structure in the quantum Hall regime. Here we introduce a cryogenic scanning-probe technique-- subsurface charge accumulation imaging-- that permits very high resolution examination of systems of mobile electrons inside materials. We use it to image directly the nanometer-scale electronic structures that exist in the quantum Hall regime.
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Submitted 9 November, 1998;
originally announced November 1998.
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Single electron capacitance spectroscopy of vertical quantum dots using a single electron transistor
Authors:
M. Koltonyuk,
D. Berman,
N. B. Zhitenev,
R. C. Ashoori,
N. Pfeiffer,
K. W. West
Abstract:
We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge induced on the SET central island from single electron additions to the dot modulates the SET output, and we describe two methods for demodulation that permi…
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We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge induced on the SET central island from single electron additions to the dot modulates the SET output, and we describe two methods for demodulation that permit quantitative extraction of the quantum dot capacitance signal. The two methods produce closely similar results for the determined single electron capacitance peaks.
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Submitted 12 June, 1998; v1 submitted 29 May, 1998;
originally announced May 1998.
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Observation of Quantum Fluctuations of Charge on a Quantum Dot
Authors:
D. Berman,
N. B. Zhitenev,
R. C. Ashoori,
M. Shayegan
Abstract:
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a reservoir into the dot through a single point contact. The charge in the dot increases continuously for large point contact conductance and in a step-like manner in…
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We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a reservoir into the dot through a single point contact. The charge in the dot increases continuously for large point contact conductance and in a step-like manner in units of single electrons with the contact nearly closed. We measure the corresponding capacitance lineshapes for the full range of point contact conductances. The lineshapes are described well by perturbation theory and not by theories in which the dot charging energy is altered by the barrier conductance.
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Submitted 6 April, 1998; v1 submitted 30 March, 1998;
originally announced March 1998.
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Periodic and Aperiodic Bunching in the Addition Spectra of Quantum Dot
Authors:
N. B. Zhitenev,
R. C. Ashoori,
L. N. Pfeiffer,
K. W. West
Abstract:
We study electron addition spectra of quantum dots in a broad range of electron occupancies starting from the first electron. Spectra for dots containing <200 electrons reveal a surprising feature. Electron additions are not evenly spaced in gate voltage. Rather, they group into bunches. With increasing electron number the bunching evolves from occurring randomly to periodically at about every f…
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We study electron addition spectra of quantum dots in a broad range of electron occupancies starting from the first electron. Spectra for dots containing <200 electrons reveal a surprising feature. Electron additions are not evenly spaced in gate voltage. Rather, they group into bunches. With increasing electron number the bunching evolves from occurring randomly to periodically at about every fifth electron. The periodicity of the bunching and features in electron tunneling rates suggest that the bunching is associated with electron additions into spatially distinct regions within the dots.
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Submitted 27 March, 1997;
originally announced March 1997.
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Universal Linear Density of States for Tunneling into the Two-Dimensional Electron Gas in a Magnetic field
Authors:
H. B. Chan,
P. I. Glicofridis,
R. C. Ashoori,
M. L. Melloch
Abstract:
A new technique permits high fidelity measurement of the tunneling density of states (TDOS) of the two-dimensional electron gas. The obtained TDOS contains no distortions arising from low 2D in-plane conductivity and includes the contribution from localized tunneling sites. In a perpendicular magnetic field, a pseudogap develops in the TDOS at the Fermi level. Improved sensitivity enables resolu…
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A new technique permits high fidelity measurement of the tunneling density of states (TDOS) of the two-dimensional electron gas. The obtained TDOS contains no distortions arising from low 2D in-plane conductivity and includes the contribution from localized tunneling sites. In a perpendicular magnetic field, a pseudogap develops in the TDOS at the Fermi level. Improved sensitivity enables resolution of a linear dependence of the TDOS on energy near the Fermi energy. The slopes of this linear gap are strongly field dependent. The data are suggestive of a new model of the gap at low energies.
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Submitted 11 February, 1997;
originally announced February 1997.
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A New Class of Resonances at the Edge of the Two Dimensional Electron Gas
Authors:
N. B. Zhitenev,
M. Brodsky,
R. C. Ashoori,
M. R. Melloch
Abstract:
We measure the frequency dependent capacitance of a gate covering the edge and part of a two-dimensional electron gas in the quantum Hall regime. In applying a positive gate bias, we create a metallic puddle under the gate surrounded by an insulating region. Charging of the puddle occurs via electron tunneling from a metallic edge channel. Analysis of the data allows direct extraction of this tu…
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We measure the frequency dependent capacitance of a gate covering the edge and part of a two-dimensional electron gas in the quantum Hall regime. In applying a positive gate bias, we create a metallic puddle under the gate surrounded by an insulating region. Charging of the puddle occurs via electron tunneling from a metallic edge channel. Analysis of the data allows direct extraction of this tunneling conductance. Novel conductance resonances appear as a function of gate bias. Samples with gates ranging from 1-170~$μ$m along the edge display strikingly similar resonance spectra. The data suggest the existence of unexpected structure, homogeneous over long length scales, at the sample edge.
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Submitted 31 January, 1996;
originally announced January 1996.
