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S-band acoustoelectric amplifier utilizing an ultra-high thermal conductivity heterostructure for low self-heating
Authors:
Lisa Hackett,
Xingyu Du,
Michael Miller,
Brandon Smith,
Steven Santillan,
Josh Montoya,
Robert Reyna,
Shawn Arterburn,
Scott Weatherrend,
Thomas A. Friedmann,
Roy H. Olsson III,
Matt Eichenfield
Abstract:
Here we report on an acoustoelectric slab waveguide heterostructure for phonon amplification using a thin Al$_{0.58}$Sc$_{0.42}$N film grown directly on a 4H-SiC substrate with an ultra-thin In$_{0.53}$Ga$_{0.47}$As epitaxial film heterogeneously integrated onto the surface of the Al$_{0.58}$Sc$_{0.42}$N. The aluminum scandium nitride film grown directly on silicon carbide enables a thin (1 micron…
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Here we report on an acoustoelectric slab waveguide heterostructure for phonon amplification using a thin Al$_{0.58}$Sc$_{0.42}$N film grown directly on a 4H-SiC substrate with an ultra-thin In$_{0.53}$Ga$_{0.47}$As epitaxial film heterogeneously integrated onto the surface of the Al$_{0.58}$Sc$_{0.42}$N. The aluminum scandium nitride film grown directly on silicon carbide enables a thin (1 micron thick) piezoelectric film to be deposited on a thermally conductive bulk substrate (370 W/m-K for 4H-SiC), enabling negligible self-heating when combined with the In$_{0.53}$Ga$_{0.47}$As semiconductor parameters of large mobility (~7000 cm$^2$/V-s) and low concentration of charge carriers (~5x10$^{15}$ cm$^{-3}$). A Sezawa mode with optimal overlap between the peak of its evanescent electric field and the semiconductor charge carriers is supported. The high velocity of the heterostructure materials allows us to operate the Sezawa mode amplifier at 3.05 GHz, demonstrating a gain of 500 dB/cm (40 dB in 800 microns). Additionally, a terminal end-to-end radio frequency gain of 7.7 dB and a nonreciprocal transmission of 52.6 dB are achieved with a dissipated DC power of 2.3 mW. The power added efficiency and acoustic noise figure are also characterized.
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Submitted 28 September, 2023; v1 submitted 27 September, 2023;
originally announced September 2023.
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High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures
Authors:
Lisa Hackett,
Matthew Koppa,
Brandon Smith,
Michael Miller,
Steven Santillan,
Scott Weatherred,
Shawn Arterburn,
Thomas A. Friedmann,
Nils Otterstrom,
Matt Eichenfield
Abstract:
We show that phononic frequency conversion can be enhanced by orders of magnitude in piezoelectric systems by heterogeneous integration of high-mobility semiconductor films. A lithium niobate and indium gallium arsenide heterostructure is utilized to demonstrate efficient three-wave mixing processes at microwave frequencies, including 16% phononic power conversion efficiency for sum-frequency gene…
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We show that phononic frequency conversion can be enhanced by orders of magnitude in piezoelectric systems by heterogeneous integration of high-mobility semiconductor films. A lithium niobate and indium gallium arsenide heterostructure is utilized to demonstrate efficient three-wave mixing processes at microwave frequencies, including 16% phononic power conversion efficiency for sum-frequency generation and 1% phononic power conversion efficiency for difference-frequency generation, as well as the most efficient degenerate four-wave phononic mixing to date. We present a theoretical model that accurately predicts the sum-frequency and difference-frequency generation processes and we show that the conversion efficiency can be further enhanced by the application of semiconductor bias fields. Laser Doppler vibrometry is then applied to examine many three-wave and four-wave mixing processes simultaneously in the same device. Through the use of our developed model, we show that these nonlinearities can be enhanced far beyond what is demonstrated here by confining phonons to smaller dimensions in waveguides and optimizing semiconductor material properties or using 2D semiconductors.
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Submitted 2 May, 2023;
originally announced May 2023.
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110 GHz, 110 mW Hybrid Silicon-Lithium Niobate Mach-Zehnder Modulator
Authors:
Forrest Valdez,
Viphretuo Mere,
Xiaoxi Wang,
Nicholas Boynton,
Thomas A. Friedmann,
Shawn Arterburn,
Christina Dallo,
Andrew T. Pomerene,
Andrew L. Starbuck,
Douglas C. Trotter,
Anthony L. Lentine,
Shayan Mookherjea
Abstract:
High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. T…
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High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $V_πL$ product of 3.1 V$.$cm and an on-chip optical insertion loss of 1.8 dB.
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Submitted 26 October, 2022;
originally announced October 2022.
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Nonreciprocal low-noise acoustoelectric microwave amplifiers with net gain in continuous operation
Authors:
Lisa Hackett,
Michael Miller,
Scott Weatherred,
Shawn Arterburn,
Matthew Storey,
Greg Peake,
Daniel Dominguez,
Patrick Finnegan,
Thomas A. Friedmann,
Matt Eichenfield
Abstract:
Over sixty years ago, it was hypothesized that specially designed acoustic systems that leveraged the acoustoelectric effect between phonons and charge carriers could revolutionize radio frequency electronic systems by allowing nonlinear and nonreciprocal functionalities such as gain and isolation to be achieved in the acoustic domain. Despite six decades of work, no acoustoelectric amplifier has…
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Over sixty years ago, it was hypothesized that specially designed acoustic systems that leveraged the acoustoelectric effect between phonons and charge carriers could revolutionize radio frequency electronic systems by allowing nonlinear and nonreciprocal functionalities such as gain and isolation to be achieved in the acoustic domain. Despite six decades of work, no acoustoelectric amplifier has been produced that can achieve a large net (terminal) gain at microwave frequencies with low power consumption and noise figure. Here we demonstrate a novel three-layer acoustoelectric heterostructure that enables the first-ever continuously operating acoustoelectric amplifier with terminal gain at gigahertz frequencies. We achieve a terminal gain of 11.25 dB in a 500 micron long device, operating at 1 GHz with a DC power dissipation of 19.6 mW. We also realize broadband gain from 0.25-3.4 GHz and nonreciprocal transmission exceeding 44 dB at 1 GHz. Our acoustic noise figure is 2.8 dB, which is the lowest-ever demonstrated noise figure for an acoustoelectric amplifier. We discuss generally how to optimize these acoustoelectric heterostructures and show that it should be immediately achievable to produce devices with even larger gain in shorter lengths while simultaneously having lower power consumption and noise figure.
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Submitted 9 May, 2022; v1 submitted 20 March, 2022;
originally announced March 2022.
