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Quantum communication networks with defects in silicon carbide
Authors:
Sebastian Ecker,
Matthias Fink,
Thomas Scheidl,
Philipp Sohr,
Rupert Ursin,
Muhammad Junaid Arshad,
Cristian Bonato,
Pasquale Cilibrizzi,
Adam Gali,
Péter Udvarhelyi,
Alberto Politi,
Oliver J. Trojak,
Misagh Ghezellou,
Jawad Ul Hassan,
Ivan G. Ivanov,
Nguyen Tien Son,
Guido Burkard,
Benedikt Tissot,
Joop Hendriks,
Carmem M. Gilardoni,
Caspar H. van der Wal,
Christian David,
Thomas Astner,
Philipp Koller,
Michael Trupke
Abstract:
Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity…
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Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity for integration with semiconductor devices. Some defects with optical transitions in the telecom range have been identified, allowing to interface with fiber networks without the need for wavelength conversion. These unique properties make SiC an attractive platform for the implementation of quantum nodes for quantum communication networks. We provide an overview of the most prominent defects in SiC and their implementation in spin-photon interfaces. Furthermore, we model a memory-enhanced quantum communication protocol in order to extract the parameters required to surpass a direct point-to-point link performance. Based on these insights, we summarize the key steps required towards the deployment of SiC devices in large-scale quantum communication networks.
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Submitted 5 March, 2024;
originally announced March 2024.
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Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
Authors:
Pasquale Cilibrizzi,
Muhammad Junaid Arshad,
Benedikt Tissot,
Nguyen Tien Son,
Ivan G. Ivanov,
Thomas Astner,
Philipp Koller,
Misagh Ghezellou,
Jawad Ul-Hassan,
Daniel White,
Christiaan Bekker,
Guido Burkard,
Michael Trupke,
Cristian Bonato
Abstract:
Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitte…
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Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitters and report the observation of spin-dependent optical transitions, a key requirement for spin-photon interfaces. By engineering the isotopic composition of the SiC matrix, we reduce the inhomogeneous spectral distribution of different emitters down to 100 MHz, significantly smaller than any other single quantum emitter. Additionally, we tailor the dopant concentration to stabilise the telecom-wavelength V4+ charge state, thereby extending its lifetime by at least two orders of magnitude. These results bolster the prospects for single V emitters in SiC as material nodes in scalable telecom quantum networks.
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Submitted 24 November, 2023; v1 submitted 2 May, 2023;
originally announced May 2023.
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Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography
Authors:
Christiaan Bekker,
Muhammad Junaid Arshad,
Pasquale Cilibrizzi,
Charalampos Nikolatos,
Peter Lomax,
Graham S. Wood,
Rebecca Cheung,
Wolfgang Knolle,
Neil Ross,
Brian Gerardot,
Cristian Bonato
Abstract:
Grayscale lithography allows the creation of micrometer-scale features with spatially-controlled height in a process that is fully compatible with standard lithography. Here, solid immersion lenses are demonstrated in silicon carbide using a novel fabrication protocol combining grayscale lithography and hard-mask techniques to allow nearly hemispherical lenses of 5 $μ$m radius to be etched into th…
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Grayscale lithography allows the creation of micrometer-scale features with spatially-controlled height in a process that is fully compatible with standard lithography. Here, solid immersion lenses are demonstrated in silicon carbide using a novel fabrication protocol combining grayscale lithography and hard-mask techniques to allow nearly hemispherical lenses of 5 $μ$m radius to be etched into the substrate. The technique is highly scalable and compatible with CMOS technology, and device aspect ratios can be tuned after resist patterning by controlling the chemistry of the subsequent dry etch. These results provide a low-cost, high-throughput and industrially-relevant alternative to focused ion beam milling for the creation of high-aspect-ratio, rounded microstructures.
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Submitted 18 January, 2023;
originally announced January 2023.
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Real-time adaptive estimation of decoherence timescales for a single qubit
Authors:
Muhammad Junaid Arshad,
Christiaan Bekker,
Ben Haylock,
Krzysztof Skrzypczak,
Daniel White,
Benjamin Griffiths,
Joe Gore,
Gavin W. Morley,
Patrick Salter,
Jason Smith,
Inbar Zohar,
Amit Finkler,
Yoann Altmann,
Erik M. Gauger,
Cristian Bonato
Abstract:
Characterising the time over which quantum coherence survives is critical for any implementation of quantum bits, memories and sensors. The usual method for determining a quantum system's decoherence rate involves a suite of experiments probing the entire expected range of this parameter, and extracting the resulting estimation in post-processing. Here we present an adaptive multi-parameter Bayesi…
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Characterising the time over which quantum coherence survives is critical for any implementation of quantum bits, memories and sensors. The usual method for determining a quantum system's decoherence rate involves a suite of experiments probing the entire expected range of this parameter, and extracting the resulting estimation in post-processing. Here we present an adaptive multi-parameter Bayesian approach, based on a simple analytical update rule, to estimate the key decoherence timescales ($T_1$, $T_2^*$ and $T_2$) and the corresponding decay exponent of a quantum system in real time, using information gained in preceding experiments. This approach reduces the time required to reach a given uncertainty by a factor up to an order of magnitude, depending on the specific experiment, compared to the standard protocol of curve fitting. A further speed-up of a factor $\sim 2$ can be realised by performing our optimisation with respect to sensitivity as opposed to variance.
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Submitted 24 January, 2024; v1 submitted 12 October, 2022;
originally announced October 2022.
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Real-time frequency estimation of a qubit without single-shot-readout
Authors:
Inbar Zohar,
Ben Haylock,
Yoav Romach,
Muhammad Junaid Arshad,
Nir Halay,
Niv Drucker,
Rainer Stöhr,
Andrej Denisenko,
Yonatan Cohen,
Cristian Bonato,
Amit Finkler
Abstract:
Quantum sensors can potentially achieve the Heisenberg limit of sensitivity over a large dynamic range using quantum algorithms. The adaptive phase estimation algorithm (PEA) is one example that was proven to achieve such high sensitivities with single-shot readout (SSR) sensors. However, using the adaptive PEA on a non-SSR sensor is not trivial due to the low contrast nature of the measurement. T…
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Quantum sensors can potentially achieve the Heisenberg limit of sensitivity over a large dynamic range using quantum algorithms. The adaptive phase estimation algorithm (PEA) is one example that was proven to achieve such high sensitivities with single-shot readout (SSR) sensors. However, using the adaptive PEA on a non-SSR sensor is not trivial due to the low contrast nature of the measurement. The standard approach to account for the averaged nature of the measurement in this PEA algorithm is to use a method based on `majority voting'. Although it is easy to implement, this method is more prone to mistakes due to noise in the measurement. To reduce these mistakes, a binomial distribution technique from a batch selection was recently shown theoretically to be superior, as all ranges of outcomes from an averaged measurement are considered. Here we apply, for the first time, real-time non-adaptive PEA on a non-SSR sensor with the binomial distribution approach. We compare the mean square error of the binomial distribution method to the majority-voting approach using the nitrogen-vacancy center in diamond at ambient conditions as a non-SSR sensor. Our results suggest that the binomial distribution approach achieves better accuracy with the same sensing times. To further shorten the sensing time, we propose an adaptive algorithm that controls the readout phase and, therefore, the measurement basis set. We show by numerical simulation that adding the adaptive protocol can further improve the accuracy in a future real-time experiment.
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Submitted 11 May, 2023; v1 submitted 11 October, 2022;
originally announced October 2022.