Wafer-scale graphene field-effect transistor biosensor arrays with monolithic CMOS readout
Authors:
Miika Soikkeli,
Anton Murros,
Arto Rantala,
Oihana Txoperena,
Olli-Pekka Kilpi,
Markku Kainlauri,
Kuura Sovanto,
Arantxa Maestre,
Alba Centeno,
Kari Tukkiniemi,
David Gomes Martins,
Amaia Zurutuza,
Sanna Arpiainen,
Mika Prunnila
Abstract:
The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detection. Multianalyte detection benefits greatly from complementary metal-oxide semiconductor (CMOS) integrated sensing solutions, offering miniaturized multiplexed sensing arrays with integrated readout electronics and extre…
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The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detection. Multianalyte detection benefits greatly from complementary metal-oxide semiconductor (CMOS) integrated sensing solutions, offering miniaturized multiplexed sensing arrays with integrated readout electronics and extremely large sensor counts. The development of CMOS back end of line integration compatible graphene field-effect transistor (GFET) based biosensing has been rapid during the last few years, both in terms of the fabrication scale-up and functionalization towards biorecognition from real sample matrices. The next steps in industrialization relate to improving reliability and require increased statistics. Regarding functionalization towards truly quantitative sensors and on-chip bioassays with improved statistics require sensor arrays with reduced variability in functionalization. Such multiplexed bioassays, whether based on graphene or on other sensitive nanomaterials, are among the most promising technologies for label-free electrical biosensing. As an important step towards that, we report wafer-scale fabrication of CMOS integrated GFET arrays with high yield and uniformity, designed especially for biosensing applications. We demonstrate the operation of the sensing platform array with 512 GFETs in simultaneous detection for sodium chloride concentration series. This platform offers a truly statistical approach on GFET based biosensing and further to quantitative and multi-analyte sensing. The reported techniques can also be applied to other fields relying on functionalized GFETs, such as gas or chemical sensing or infrared imaging.
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Submitted 15 May, 2023;
originally announced May 2023.
Geometrical magnetoresistance effect and mobility in graphene field-effect transistors
Authors:
Isabel Harrysson Rodrigues,
Andrey Generalov,
Anamul Md Hoque,
Miika Soikkeli,
Anton Murros,
Sanna Arpiainen,
Andrei Vorobiev
Abstract:
Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in the GFETs can be directly characterized and studied using the geometrical magnetoresistance (gMR) effect. The method is free from the limitations of other approac…
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Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in the GFETs can be directly characterized and studied using the geometrical magnetoresistance (gMR) effect. The method is free from the limitations of other approaches since it does not require an assumption of the constant mobility and the knowledge of the gate capacitance. Studies of a few sets of GFETs in the wide range of transverse magnetic fields indicate that the gMR effect dominates up to approximately 0.55 T. In higher fields, the physical magnetoresistance effect starts to contribute. The advantages of the gMR approach allowed us to interpret the measured dependencies of mobility on the gate voltage, i.e., carrier concentration, and identify the corresponding scattering mechanisms. In particular, the range of the fairly constant mobility is associated with the dominating Coulomb scattering. The decrease in mobility at higher carrier concentrations is associated with the contribution of the phonon scattering. Analysis shows that the gMR mobility is typically 2-3 times higher than that found via the commonly used drain resistance model. The latter underestimates the mobility since it does not take the interfacial capacitance into account.
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Submitted 6 June, 2022; v1 submitted 30 May, 2022;
originally announced May 2022.
