-
Bose-Einstein condensate source on a optical grating-based atom chip for quantum sensor applications
Authors:
R. Calviac,
A. Rouxel,
S. Charlot,
D. Bourrier,
A. Arnoult,
A. Monmayrant,
O. Gauthier-Lafaye,
A. Gauguet,
B. Allard
Abstract:
We report the preparation of Bose-Einstein condensates (BECs) by integrating laser cooling with a grating magneto-optical trap (GMOT) and forced evaporation in a magnetic trap on a single chip. This new approach allowed us to produce a $6 \times 10^4$ atom Bose-Einstein condensate of rubidium-87 atoms with a single laser cooling beam. Our results represent a significant advance in the robustness a…
▽ More
We report the preparation of Bose-Einstein condensates (BECs) by integrating laser cooling with a grating magneto-optical trap (GMOT) and forced evaporation in a magnetic trap on a single chip. This new approach allowed us to produce a $6 \times 10^4$ atom Bose-Einstein condensate of rubidium-87 atoms with a single laser cooling beam. Our results represent a significant advance in the robustness and reliability of cold atom-based inertial sensors, especially for applications in demanding field environments.
△ Less
Submitted 7 June, 2024;
originally announced June 2024.
-
Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A
Authors:
Mohamed Ali Khaled,
Leonardo Cancellara,
Salima Fekraoui,
Richard Daubriac,
François Bertran,
Chiara Bigi,
Quentin Gravelier,
Richard Monflier,
Alexandre Arnoult,
Corentin Durand,
Sébastien Plissard
Abstract:
Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the first materials studied, Bismuth Antimony alloys (Bi1-xSbx) show great potential due to their tuneable electronic band structure and efficient charge-to-spin conversion. Here, we report the growth of Bi1-xSbx thin films…
▽ More
Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the first materials studied, Bismuth Antimony alloys (Bi1-xSbx) show great potential due to their tuneable electronic band structure and efficient charge-to-spin conversion. Here, we report the growth of Bi1-xSbx thin films on GaAs (111)A substrates following two different protocols. For the conventional epitaxy process, the grown films show excellent crystallinity and twin domains corresponding to an in-plane 180{\textdegree} rotation of the crystalline structure. Domain walls are found to be composition-dependent and have a lower density for Antimony-rich films. For the optimized process, depositing an Antimony bilayer prior to BiSb growth allows achieving single crystallinity of the TI films. The topologically protected surface states are evidenced by ex-situ ARPES measurements for domains-free and conventional films. To the best of our knowledge, this work presents the first large-scale epitaxial integration of single crystalline Bi1-xSbx thin films on industrial substrates.
△ Less
Submitted 23 May, 2024;
originally announced May 2024.
-
Monitoring MBE substrate deoxidation via RHEED image-sequence analysis by deep learning
Authors:
Abdourahman Khaireh-Walieh,
Alexandre Arnoult,
Sébastien Plissard,
Peter R. Wiecha
Abstract:
Reflection high-energy electron diffraction (RHEED) is a powerful tool in molecular beam epitaxy (MBE), but RHEED images are often difficult to interpret, requiring experienced operators. We present an approach for automated surveillance of GaAs substrate deoxidation in MBE reactors using deep learning based RHEED image-sequence classification. Our approach consists of an non-supervised auto-encod…
▽ More
Reflection high-energy electron diffraction (RHEED) is a powerful tool in molecular beam epitaxy (MBE), but RHEED images are often difficult to interpret, requiring experienced operators. We present an approach for automated surveillance of GaAs substrate deoxidation in MBE reactors using deep learning based RHEED image-sequence classification. Our approach consists of an non-supervised auto-encoder (AE) for feature extraction, combined with a supervised convolutional classifier network. We demonstrate that our lightweight network model can accurately identify the exact deoxidation moment. Furthermore we show that the approach is very robust and allows accurate deoxidation detection during months without requiring re-training. The main advantage of the approach is that it can be applied to raw RHEED images without requiring further information such as the rotation angle, temperature, etc.
△ Less
Submitted 15 December, 2022; v1 submitted 7 October, 2022;
originally announced October 2022.
-
Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBi$_{x}$As$_{1-x}$/GaAs epilayers
Authors:
Christopher A. Broderick,
Simone Mazzucato,
Hélène Carrère,
Thierry Amand,
Hejer Makhloufi,
Alexandre Arnoult,
Chantal Fontaine,
Omer Donmez,
Ayşe Erol,
Muhammad Usman,
Eoin P. O'Reilly,
Xavier Marie
Abstract:
The electron Landé g factor ($g^{*}$) is investigated both experimentally and theoretically in a series of GaBi$_{x}$As$_{1-x}$/GaAs strained epitaxial layers, for bismuth compositions up to $x = 3.8$%. We measure $g^{*}$ via time-resolved photoluminescence spectroscopy, which we use to analyze the spin quantum beats in the polarization of the photoluminescence in the presence of an externally app…
▽ More
The electron Landé g factor ($g^{*}$) is investigated both experimentally and theoretically in a series of GaBi$_{x}$As$_{1-x}$/GaAs strained epitaxial layers, for bismuth compositions up to $x = 3.8$%. We measure $g^{*}$ via time-resolved photoluminescence spectroscopy, which we use to analyze the spin quantum beats in the polarization of the photoluminescence in the presence of an externally applied magnetic field. The experimental measurements are compared directly to atomistic tight-binding calculations on large supercells, which allows us to explicitly account for alloy disorder effects. We demonstrate that the magnitude of $g^{*}$ increases strongly with increasing Bi composition $x$ and, based on the agreement between the theoretical calculations and experimental measurements, elucidate the underlying causes of the observed variation of $g^{*}$. By performing measurements in which the orientation of the applied magnetic field is changed, we further demonstrate that $g^{*}$ is strongly anisotropic. We quantify the observed variation of $g^{*}$ with $x$, and its anisotropy, in terms of a combination of epitaxial strain and Bi-induced hybridization of valence states due to alloy disorder, which strongly perturbs the electronic structure.
△ Less
Submitted 30 September, 2014;
originally announced September 2014.
-
Electrical spin injection into p-doped quantum dots through a tunnel barrier
Authors:
L. Lombez,
P. Renucci,
P. Gallo,
P. F. Braun,
H. Carrere,
P. H. Binh,
X. Marie,
T. Amand,
B. Urbaszek,
J. L. Gauffier,
T. Camps,
A. Arnoult,
C. Fontaine,
C. Deranlot,
R. Mattana,
H. Jaffres,
J. M. George
Abstract:
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminesc…
▽ More
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at low temperature in a 2T magnetic field, leading to an estimation of the electrical spin injection yield of 35%. Moreover, this electroluminescence circular polarization is stable up to 70 K.
△ Less
Submitted 8 January, 2007; v1 submitted 16 October, 2006;
originally announced October 2006.
