Showing 1–12 of 12 results for author: Arehart, A

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Authors: Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia, Joe F. McGlone, Wyatt Moore, Aaron R. Arehart, Steven A. Ringel, Hong** Zhao, Siddharth Rajan

Abstract: The performance of ultra-wide band gap materials like $β$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO$_\mathrm{3}$ can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region… ▽ More The performance of ultra-wide band gap materials like $β$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO$_\mathrm{3}$ can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region of lateral field effect transistors. Using this strategy, we were able to achieve high average breakdown fields of 1.5 MV/cm and 4 MV/cm at gate-drain spacing (L$_\mathrm{gd}$) of 6 um and 0.6 um respectively in $β$-Ga$_\mathrm{2}$O$_\mathrm{3}$, at a high channel sheet charge density of 1.8x10$^\mathrm{13}$cm$^\mathrm{-2}$. The high sheet charge density together with high breakdown field enabled a record power figure of merit (V$^\mathrm{2}$$_\mathrm{br}$/R$_\mathrm{on}$) of 376 MW/cm$^\mathrm{2}$ at a gate-drain spacing of 3 um. △ Less

Submitted 3 June, 2020; originally announced June 2020.

Probing charge transport and background do** in MOCVD grown (010) $β$-Ga$_{2}$O$_{3}$

Authors: Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia, Wyatt Moore, Zhaoying Chen, Joe F. McGlone, David R. Daughton, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan, Hong** Zhao

Abstract: A new record-high room temperature electron Hall mobility ($μ_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for $β$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating substrate via metalorganic chemical vapor deposition (MOCVD). A peak electron mobility of $\sim 9500\space cm^{2}/V\space s$ is achieved at 45 K. Further investi… ▽ More A new record-high room temperature electron Hall mobility ($μ_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for $β$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating substrate via metalorganic chemical vapor deposition (MOCVD). A peak electron mobility of $\sim 9500\space cm^{2}/V\space s$ is achieved at 45 K. Further investigation on the transport properties indicate the existence of sheet charges near the epi-layer/substrate interface. Si is identified as the primary contributor to the background carrier in both the epi-layer and the interface, originated from both surface contamination as well as growth environment. Pre-growth hydrofluoric acid cleaning of the substrate lead to an obvious decrease of Si impurity both at interface and in epi-layer. In addition, the effect of MOCVD growth condition, particularly the chamber pressure, on the Si impurity incorporation is studied. A positive correlation between the background charge concentration and the MOCVD growth pressure is confirmed. It is noteworthy that in a $β$-Ga2O3 film with very low bulk charge concentration, even a reduced sheet charge density can play an important role in the charge transport properties. △ Less

Submitted 27 April, 2020; originally announced April 2020.

Comments: 19 pages, 5 figures

Metal$/BaTiO_{3}/β-Ga_{2}O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

Authors: Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore, Caiyu Wang, Aidan Lee, Joe McGlone, Nidhin Kurian Kalarickal, Aaron Arehart, Steven Ringel, Fengyuan Yang, Siddharth Rajan

Abstract: Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type do** is not available, achieving this high breakdown field in a vertical diode or transistor is very challenging. We propose and de… ▽ More Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type do** is not available, achieving this high breakdown field in a vertical diode or transistor is very challenging. We propose and demonstrate the use of dielectric heterojunctions that use extreme permittivity materials to achieve high breakdown field in a unipolar device. We demonstrate the integration of a high permittivity material BaTiO3 with n-type $β$-Ga2O3 to enable 5.7 MV/cm average electric field and 7 MV/cm peak electric field at the device edge, while maintaining forward conduction with relatively low on-resistance and voltage loss. The proposed dielectric heterojunction could enable new design strategies to achieve theoretical device performance limits in wide and ultra-wide band gap semiconductors where bipolar do** is challenging. △ Less

Submitted 5 November, 2019; originally announced November 2019.

High electron density $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation do** using ultra-thin (1 nm) spacer layer

Authors: Nidhin Kurian Kalarickal, Zhanbo Xia, Joe Mcglone, Yumo Liu, Wyatt Moore, Aaron Arehart, Steve Ringel, Siddharth Rajan

Abstract: We report on the design and demonstration of $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-do** and heterojunction interface was investigated in $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped structures. We find that that this strategy enables higher 2DEG sheet charge densi… ▽ More We report on the design and demonstration of $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-do** and heterojunction interface was investigated in $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped structures. We find that that this strategy enables higher 2DEG sheet charge density up to 6.1x10^12 cm^2 with mobility of 147 cm^2/Vs. The presence of a degenerate 2DEG channel was confirmed by the measurement of low temperature effective mobility of 378 cm^2/V-s and a lack of carrier freeze out from low temperature capacitance voltage measurements. The electron density of 6.1x10^12 cm^2 is the highest reported sheet charge density obtained without parallel conduction channels in an $(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ heterostructure system. △ Less

Submitted 25 October, 2019; originally announced October 2019.

Mechanism of Si do** in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

Authors: Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone, Sriram Krishnamoorthy, Wyatt Moore, Mark Brenner, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan

Abstract: We report on the origin of high Si flux observed during the use of Si as a do** source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by the vapor pressure of Si but by the formation of volatile SiO. The low sublimation energy of SiO leads to weak dependence of the SiO flux of Si cell temperature… ▽ More We report on the origin of high Si flux observed during the use of Si as a do** source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by the vapor pressure of Si but by the formation of volatile SiO. The low sublimation energy of SiO leads to weak dependence of the SiO flux of Si cell temperature and a strong dependence on the background oxygen pressure. Extended exposure to activated oxygen results in reduction of SiO flux due to the formation of SiO2 on the Si surface. The work reported provides key understanding for incorporating Si into future oxide-based semiconductor heterostructure and device MBE growth. △ Less

Submitted 2 August, 2019; originally announced August 2019.

Comments: 7 pages (including reference), 3 figures

Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3

Authors: Jared M. Johnson, Zhen Chen, Joel B. Varley, Christine M. Jackson, Esmat Farzana, Zeng Zhang, Aaron R. Arehart, Hsien-Lien Huang, Arda Genc, Steven A. Ringel, Chris G. Van de Walle, David A. Muller, **woo Hwang

Abstract: Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic scale structure of beta-Ga2O3 using high resolution scanning transmission electron mi… ▽ More Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic scale structure of beta-Ga2O3 using high resolution scanning transmission electron microscopy (STEM). Each complex involves one cation interstitial atom paired with two cation vacancies. These divacancy - interstitial complexes correlate directly with structures obtained by density functional theory, which predicts them to be compensating acceptors in beta-Ga2O3. This prediction is confirmed by a comparison between STEM data and deep level optical spectroscopy results, which reveals that these complexes correspond to a deep trap within the band gap, and that the development of the complexes is facilitated by Sn do** through the increase in vacancy concentration. These findings provide new insight on this emerging material's unique response to the incorporation of impurities that can critically influence their properties. △ Less

Submitted 1 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. X 9, 041027 (2019)

Velocity Saturation in La-doped BaSnO3 Thin Films

Authors: Hareesh Chandrasekar, Junao Cheng, Tianshi Wang, Zhanbo Xia, Nicholas G. Combs, Christopher R. Freeze, Patrick B. Marshall, Joe McGlone, Aaron Arehart, Steven Ringel, Anderson Janotti, Susanne Stemmer, Wu Lu, Siddharth Rajan

Abstract: BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining device performance. We report on the experimental measurement of electron saturation velocity in La-doped BaSnO_{3} thin films for a range o… ▽ More BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining device performance. We report on the experimental measurement of electron saturation velocity in La-doped BaSnO_{3} thin films for a range of do** densities. Predicted saturation velocities based on a simple LO-phonon emission model using an effective LO phonon energy of 120 meV show good agreement with measurements of velocity saturation in La-doped BaSnO_{3} films.. Density-dependent saturation velocity in the range of 1.6x10^{7} cm/s reducing to 2x10^{6} cm/s is predicted for δ-doped BaSnO3 channels with carrier densities ranging from 10^{13} cm^{-2} to 2x10^{14} cm^{-2} respectively. These results are expected to aid the informed design of BaSnO3 as the active material for high-charge density electronic transistors. △ Less

Submitted 3 August, 2019; v1 submitted 13 May, 2019; originally announced May 2019.

Comments: 23 pages, 10 figures, 2 tables

Journal ref: Appl. Phys. Lett. 115 , 092102 (2019)

Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells

Authors: P. K. Paul, T. Jarmar, L. Stolt, A. Rockett, A. R. Arehart

Abstract: Light-induced instabilities/degradation in Cu(In,Ga)Se2 (CIGS) solar cells are a prevalent and urgent issue to resolve to improve performance, uniformity, and reliability. Here, mechanisms contributing to light-induced instabilities are identified focusing on an observed short circuit current (JSC) reduction. External quantum efficiency measurements before and after light soaking identified a redu… ▽ More Light-induced instabilities/degradation in Cu(In,Ga)Se2 (CIGS) solar cells are a prevalent and urgent issue to resolve to improve performance, uniformity, and reliability. Here, mechanisms contributing to light-induced instabilities are identified focusing on an observed short circuit current (JSC) reduction. External quantum efficiency measurements before and after light soaking identified a reduction in long wavelength photon carrier collection efficiency in the CIGS absorber layer. Using deep level optical spectroscopy (DLOS), the concentration of CIGS EV+0.98 eV deep level is correlated with the amount of JSC degradation, Finally, capacitance voltage (C-V) measurements reveal light induces a large reduction in the depletion depth and reduction of carrier collection and are all correlated with the JSC reduction. Finally, the EV+0.53 eV trap concentrations are shown to correlate with VOC instability but not the JSC reduction confirming that multiple trap-induced mechanism are responsible for the light-induced instabilities. △ Less

Submitted 24 May, 2018; originally announced June 2018.

Fast C-V method to mitigate effects of deep levels in CIGS do** profiles

Authors: P. K. Paul, J. Bailey, G. Zapalac, A. R. Arehart

Abstract: In this work, methods to determine more accurate do** profiles in semiconductors is explored where trap-induced artifacts such as hysteresis and do** artifacts are observed. Specifically in CIGS, it is shown that this fast capacitance-voltage (C-V) approach presented here allows for accurate do** profile measurement even at room temperature, which is typically not possible due to the large r… ▽ More In this work, methods to determine more accurate do** profiles in semiconductors is explored where trap-induced artifacts such as hysteresis and do** artifacts are observed. Specifically in CIGS, it is shown that this fast capacitance-voltage (C-V) approach presented here allows for accurate do** profile measurement even at room temperature, which is typically not possible due to the large ratio of trap concentration to do**. Using deep level transient spectroscopy (DLTS) measurement, the deep trap responsible for the abnormal C-V measurement above 200 K is identified. Importantly, this fast C-V can be used for fast evaluation on the production line to monitor the true do** concentration, and even estimate the trap concentration. Additionally, the influence of high conductance on the apparent do** profile at different temperature is investigated. △ Less

Submitted 13 July, 2017; v1 submitted 29 June, 2017; originally announced June 2017.

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Authors: Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi, Yuewei Zhang, Joe McGlone, Jared Johnson, Mark Brenner, Aaron R. Arehart, **woo Hwang, Saurabh Lodha, Siddharth Rajan

Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta do**. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG… ▽ More Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta do**. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation do** in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics. △ Less

Submitted 28 June, 2017; originally announced June 2017.

Layer-Transferred MoS2/GaN PN Diodes

Authors: Edwin W. Lee II, Choong Hee Lee, Pran K. Paul, Lu Ma, William D. McCulloch, Sriram Krishnamoorthy, Yiying Wu, Aaron Arehart, Siddharth Rajan

Abstract: Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred… ▽ More Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quality, continuous MoS2 films. Current-voltage measurements of these diodes exhibited excellent rectification, and capacitance-voltage measurements were used to extract a conduction band offset of approximately 0.2 eV for the transferred MoS2/GaN heterojunction. This conduction band offset was confirmed by internal photoemission (IPE) measurements. The energy band lineup of the MoS2/GaN heterojunction is proposed here. This work demonstrates the potential of 2D/3D heterojunctions for novel device applications. △ Less

Submitted 19 May, 2015; originally announced May 2015.

Comments: 11 pages, 6 figures

Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1

Authors: Lu Ma, Digbijoy N. Nath, Edwin W. Lee II, Choong Hee Lee, Aaron Arehart, Siddharth Rajan, Yiying Wu

Abstract: We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated that the films had good out-of-plane ordering and epitaxial registry. A carrier density of ~2 x 1011 cm-2 and a room temperature mobility of 192 cm2/Vs were extr… ▽ More We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated that the films had good out-of-plane ordering and epitaxial registry. A carrier density of ~2 x 1011 cm-2 and a room temperature mobility of 192 cm2/Vs were extracted from space-charge limited transport regime in the films. The electron mobility was found to exhibit in-plane anisotropy with a ratio of ~ 1.8. Theoretical estimates of the temperature-dependent electron mobility including optical phonon, acoustic deformation potential and remote ionized impurity scattering were found to satisfactorily match the measured data. The synthesis approach reported here demonstrates the feasibility of device quality few-layer MoS2 films with excellent uniformity and high quality. △ Less

Submitted 10 May, 2014; originally announced May 2014.