Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2
Authors:
S. M. Mazza,
E. Estrada,
Z. Galloway,
C. Gee,
A. Goto,
Z. Luce,
F. McKinney-Martinez,
R. Rodriguez,
H. F. -W. Sadrozinski,
A. Seiden,
B. Smithers,
Y. Zhao,
V. Cindro,
G. Kramberger,
I. Mandić,
M. Mikuž,
M. Zavrtanik R. Arcidiacono,
N. Cartiglia,
M. Ferrero,
M. Mandurrino,
V. Sola,
A. Staiano,
M. Boscardin,
G. F. Della Betta,
F. Ficorella
, et al. (2 additional authors not shown)
Abstract:
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiati…
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The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both.
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Submitted 18 March, 2020; v1 submitted 15 April, 2018;
originally announced April 2018.