Showing 1–36 of 36 results for author: Arbiol, J

Strong Charge-Photon Coupling in Planar Germanium Enabled by Granular Aluminium Superinductors

Authors: Marián Janík, Kevin Roux, Carla Borja Espinosa, Oliver Sagi, Abdulhamid Baghdadi, Thomas Adletzberger, Stefano Calcaterra, Marc Botifoll, Alba Garzón Manjón, Jordi Arbiol, Daniel Chrastina, Giovanni Isella, Ioan M. Pop, Georgios Katsaros

Abstract: High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum buses made of such materials enable large zero-point fluctuations of the voltage, boosting the coupling rates to spin and charge qubits. However, fully exploiting the potential of disordered or granular superconductors is… ▽ More High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum buses made of such materials enable large zero-point fluctuations of the voltage, boosting the coupling rates to spin and charge qubits. However, fully exploiting the potential of disordered or granular superconductors is challenging, as their inductance and, therefore, impedance at high values are difficult to control. Here we have integrated a granular aluminium resonator, having a characteristic impedance exceeding the resistance quantum, with a germanium double quantum dot and demonstrate strong charge-photon coupling with a rate of $g_\text{c}/2π= (566 \pm 2)$ MHz. This was achieved due to the realisation of a wireless ohmmeter, which allows \emph{in situ} measurements during film deposition and, therefore, control of the kinetic inductance of granular aluminium films. Reproducible fabrication of circuits with impedances (inductances) exceeding 13 k$Ω$ (1 nH per square) is now possible. This broadly applicable method opens the path for novel qubits and high-fidelity, long-distance two-qubit gates. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films

Authors: Ying Liu, Ranming Niu, Roger Uriach, David Pesquera, Jose Manuel Caicedo Roque, Jose Santiso, Julie M Cairney, Xiaozhou Liao, Jordi Arbiol, Gustau Catalan

Abstract: Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones for high-density data storage applications. Lead Zirconate (PbZrO3) is considered the prototype material for antiferroelectricity, and indeed previous studies i… ▽ More Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones for high-density data storage applications. Lead Zirconate (PbZrO3) is considered the prototype material for antiferroelectricity, and indeed previous studies indicated that nanoscale PbZrO3 films exhibit ferroelectricity. The understanding of such phenomena from the microstructure aspect is crucial but still lacking. In this study, we fabricated a PbZrO3 film with thicknesses varying from 5 nm to 80 nm. Using Piezoresponse Force Microscopy, we discovered the film displayed a transition from antiferroelectric behaviour in the thicker areas to ferroelectric behaviour in the thinner ones, with a critical thickness between 10 and 15 nm. In this critical thickness range, a 12 nm PZO thin film was chosen for further study using aberration-corrected scanning transmission electron microscopy. The investigation showed that the film comprises both ferroelectric and ferrielectric phases. The ferroelectric phase is characterized by polarisation along the pseudocubic [011] projection direction. The positions of Pb, Zr, and O were determined using the integrated differential phase contrast method. This allowed us to ascertain that the ferroelectric PbZrO3 unit cell is half the size of that in the antiferroelectric phase on the ab plane. The observed unit cell is different from the electric field-induced ferroelectric rhombohedral phases. Additionally, we identified a ferrielectric phase with a unique up-up-zero-zero dipole configuration. The finding is crucial for understanding the performance of ultrathin antiferroelectric thin films and the subsequent design and development of antiferroelectric devices. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Evaluating the local bandgap across InxGa1-xAs multiple quantum wells in a metamorphic laser via low-loss EELS

Authors: Nicholas Stephen, Ivan Pinto-Huguet, Robert Lawrence, Demie Kepaptsoglou, Marc Botifoll, Agnieszka Gocalinska, Enrica Mura, Emanuele Pelucchi, Jordi Arbiol, Miryam Arredondo

Abstract: We investigate spatially resolved variations in the bandgap energy across multiple InxGa1-xAs quantum wells (QWs) on a GaAs substrate within a metamorphic laser structure. Using high resolution scanning transmission electron microscopy and low-loss electron energy loss spectroscopy, we present a detailed analysis of the local bandgap energy, indium concentration, and strain distribution within the… ▽ More We investigate spatially resolved variations in the bandgap energy across multiple InxGa1-xAs quantum wells (QWs) on a GaAs substrate within a metamorphic laser structure. Using high resolution scanning transmission electron microscopy and low-loss electron energy loss spectroscopy, we present a detailed analysis of the local bandgap energy, indium concentration, and strain distribution within the QWs. Our findings reveal significant inhomogeneities, particularly near the interfaces, in both the strain and indium content, and a bandgap variability across QWs. These results are correlated with density functional theory simulations to further elucidate the interplay between strain, composition, and bandgap energy. This work underscores the importance of spatially resolved analysis in understanding, and optimising, the electronic and optical properties of semiconductor devices. The study suggests that the collective impact of individual QWs might affect the emission and performance of the final device, providing insights for the design of next-generation metamorphic lasers with multiple QWs as the active region. △ Less

Submitted 10 June, 2024; originally announced June 2024.

Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices

Authors: Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad, Daria V. Beznasyuk, Christian E. N. Petersen, Sara Martí-Sánchez, Jordi Arbiol, Thomas Sand Jespersen

Abstract: New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within larg… ▽ More New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility. △ Less

Submitted 22 May, 2024; v1 submitted 10 January, 2024; originally announced January 2024.

Low disorder and high valley splitting in silicon

Authors: Davide Degli Esposti, Lucas E. A. Stehouwer, Önder Gül, Nodar Samkharadze, Corentin Déprez, Marcel Meyer, Ilja N. Meijer, Larysa Tryputen, Saurabh Karwal, Marc Botifoll, Jordi Arbiol, Sergey V. Amitonov, Lieven M. K. Vandersypen, Amir Sammak, Menno Veldhorst, Giordano Scappucci

Abstract: The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductio… ▽ More The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically-purified, strained quantum wells with high mobility of 3.14(8)$\times$10$^5$ cm$^2$/Vs and low percolation density of 6.9(1)$\times$10$^{10}$ cm$^{-2}$. These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) $μ$eV/Hz$^{1/2}$ and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors. △ Less

Submitted 2 February, 2024; v1 submitted 6 September, 2023; originally announced September 2023.

Cryogenic Multiplexing with Bottom-Up Nanowires

Authors: Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad, Daria V. Beznasiuk, Christian E. N. Petersen, Sara Martí-Sánchez, Jordi Arbiol, Thomas Sand Jespersen

Abstract: Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle experiments, however, difficulties in parallel processing of conventionally-grown NWs makes scalability unfeasible. Here, we harness selective area growth (SAG) to remove this road-block. We demonstrate large scale integrat… ▽ More Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle experiments, however, difficulties in parallel processing of conventionally-grown NWs makes scalability unfeasible. Here, we harness selective area growth (SAG) to remove this road-block. We demonstrate large scale integrated SAG NW circuits consisting of 512 channel multiplexer/demultiplexer pairs, incorporating thousands of interconnected SAG NWs operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increase the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical SAG quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future SAG quantum circuits. △ Less

Submitted 25 April, 2023; originally announced April 2023.

Comments: Main text and Supplementary Information

Asymmetrical plasmon distribution in hybrid AuAg hollow/solid coded nanotubes

Authors: Aziz Genç, Javier Patarroyo, Jordi Sancho-Parramon, Raul Arenal, Neus G. Bastus, Victor Puntes, Jordi Arbiol

Abstract: Morphological control at the nanoscale paves the way to fabricate nanostructures with desired plasmonic properties. We report the nanoengineering of plasmon resonances in 1D hollow nanostructures of two different AuAg nanotubes; completely hollow nanotubes and hybrid nanotubes comprising solid Ag and hollow AuAg segments. Spatially resolved plasmon map** by electron energy loss spectroscopy (EEL… ▽ More Morphological control at the nanoscale paves the way to fabricate nanostructures with desired plasmonic properties. We report the nanoengineering of plasmon resonances in 1D hollow nanostructures of two different AuAg nanotubes; completely hollow nanotubes and hybrid nanotubes comprising solid Ag and hollow AuAg segments. Spatially resolved plasmon map** by electron energy loss spectroscopy (EELS) revealed the presence of high order resonator-like modes and localized surface plasmon resonance (LSPR) modes in both nanotubes. Experimental findings are accurately correlated with boundary element method (BEM) simulations, where both experiments and simulations revealed that the plasmon resonances are intensely present inside the nanotubes due to plasmon hybridization. Based on the experimental and simulated results reported, we show that the novel hybrid AuAg nanotubes possess two significant coexisting features: (i) LSPRs have been generated distinctively from the hollow and solid parts of the hybrid AuAg nanotube, which opens the way to control a broad range of plasmon resonances with one single nanostructure and (ii) the periodicity of the high-order modes are disrupted due to the plasmon hybridization by the interaction of solid and hollow parts, resulting in an asymmetrical plasmon distribution in 1D nanostructures. The asymmetry could be modulated/engineered leading to control coded plasmonic nanotubes. △ Less

Submitted 27 January, 2023; originally announced January 2023.

Journal ref: Nanomaterials 2023, 13(6), 992

Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires

Authors: Sabbir A. Khan, Sara Martí-Sánchez, Dags Olsteins, Charalampos Lampadaris, Damon James Carrad, Yu Liu, Judith Quiñones, Maria Chiara Spadaro, Thomas S. Jespersen, Peter Krogstrup, Jordi Arbiol

Abstract: Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here,… ▽ More Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here, we present an extensive optimization of Sn growth on InSb, InAsSb and InAs nanowires. We demonstrate how the growth conditions and the crystal structure/symmetry of the semiconductor drive the formation of either semi-metallic $\mathrm{α-Sn}$ or superconducting $\mathrm{β-Sn}$. For InAs nanowires, we obtain phase-pure, superconducting $\mathrm{β-Sn}$ shells. However, for InSb and InAsSb nanowires, an initial epitaxial $\mathrm{α-Sn}$ phase evolves into a polycrystalline shell of coexisting $\mathrmα$ and $\mathrmβ$ phases, where the $β/α$ volume ratio increases with Sn shell thickness. Whether these nanowires exhibit superconductivity or not critically relies on the $\mathrm{β-Sn}$ content. Therefore, this work provides key insights into Sn phase control on a variety of semiconductors, with consequences for the yield of superconducting hybrids suitable for generating topological systems. △ Less

Submitted 2 January, 2023; v1 submitted 26 December, 2022; originally announced December 2022.

Comments: 12 pages, 5 figures

Translational boundaries as incipient ferrielectric domains in antiferroelectric PbZrO3

Authors: Ying Liu, Ranming Niu, Andrzej Majchrowski, Krystian Roleder, Julie M. Cairney, Jordi Arbiol, Gustau Catalan

Abstract: In the archetypal antiferroelectric PbZrO3, antiparallel electric dipoles cancel each other, resulting in zero spontaneous polarisation at the macroscopic level. Yet in actual hysteresis loops, the cancellation is rarely perfect and some remnant polarization is often observed, suggesting the metastability of polar phases in this material. In this work, using aberration-corrected scanning transmiss… ▽ More In the archetypal antiferroelectric PbZrO3, antiparallel electric dipoles cancel each other, resulting in zero spontaneous polarisation at the macroscopic level. Yet in actual hysteresis loops, the cancellation is rarely perfect and some remnant polarization is often observed, suggesting the metastability of polar phases in this material. In this work, using aberration-corrected scanning transmission electron microscopy methods on a PbZrO3 single crystal, we uncover the coexistence of the common antiferroelectric phase and a ferrielectric phase featuring an electric dipole pattern of "up down up". This dipole arrangement, predicted by Aramberri et al. (2021) to be the ground state of PbZrO3 at 0K, appears at room temperature in the form of translational boundaries that aggregate to form wider stripe domains of the polar phase embedded within the antiferroelectric matrix. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Reducing charge noise in quantum dots by using thin silicon quantum wells

Authors: B. Paquelet Wuetz, D. Degli Esposti, A. M. J. Zwerver, S. V. Amitonov, M. Botifoll, J. Arbiol, A. Sammak, L. M. K. Vandersypen, M. Russ, G. Scappucci

Abstract: Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a $^{28}$Si/SiGe heterostructure a… ▽ More Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a $^{28}$Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick $^{28}$Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29$\pm$0.02 $μ$eV/sqrt(Hz) at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to cz-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system. △ Less

Submitted 15 September, 2022; originally announced September 2022.

Journal ref: Nature Communications, 14, 1385 (2023)

Hard superconducting gap in germanium

Authors: Alberto Tosato, Vukan Levajac, Ji-Yin Wang, Casper J. Boor, Francesco Borsoi, Marc Botifoll, Carla N. Borja, Sara Martí-Sánchez, Jordi Arbiol, Amir Sammak, Menno Veldhorst, Giordano Scappucci

Abstract: The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free o… ▽ More The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free of subgap states (hard gap) has proven difficult. Here we solve this challenge by develo** a low-disorder, oxide-free interface between high-mobility planar germanium and a germanosilicide parent superconductor. This superconducting contact is formed by the thermally-activated solid phase reaction between a metal (Pt) and the semiconductor heterostructure (Ge/SiGe). Electrical characterization reveals near-unity transparency in Josephson junctions and, importantly, a hard induced superconducting gap in quantum point contacts. Furthermore, we demonstrate phase control of a Josephson junction and study transport in a gated two-dimensional superconductor-semiconductor array towards scalable architectures. These results expand the quantum technology toolbox in germanium and provide new avenues for exploring monolithic superconductor-semiconductor quantum circuits towards scalable quantum information processing. △ Less

Submitted 8 December, 2022; v1 submitted 1 June, 2022; originally announced June 2022.

Journal ref: Communications Materials, 4, 23 (2023)

Majorana-like Coulomb spectroscopy in the absence of zero bias peaks

Authors: Marco Valentini, Maksim Borovkov, Elsa Prada, Sara Marti-Sanchez, Marc Botifoll, Andrea Hofmann, Jordi Arbiol, Ramon Aguado, Pablo San-Jose, Georgios Katsaros

Abstract: Hybrid semiconductor-superconductor devices hold great promise for realizing topological quantum computing with Majorana zero modes (MZMs). However, multiple claims of Majorana detection, based on either tunneling or Coulomb blockade (CB) spectroscopy, remain disputed. Here we devise an experimental protocol that allows to perform both types of measurements on the same hybrid island by adjusting i… ▽ More Hybrid semiconductor-superconductor devices hold great promise for realizing topological quantum computing with Majorana zero modes (MZMs). However, multiple claims of Majorana detection, based on either tunneling or Coulomb blockade (CB) spectroscopy, remain disputed. Here we devise an experimental protocol that allows to perform both types of measurements on the same hybrid island by adjusting its charging energy via tunable junctions to the normal leads. This method reduces ambiguities of Majorana detections by checking the consistency between CB spectroscopy and zero bias peaks (ZBPs) in non-blockaded transport.Specifically, we observe junction-dependent, even-odd modulated, single-electron CB peaks in InAs/Al hybrid nanowires (NWs) without concomitant low-bias peaks in tunneling spectroscopy. We provide a theoretical interpretation of the experimental observations in terms of low-energy, longitudinally-confined island states rather than overlap** Majorana modes. Our results highlight the importance of combined measurements on the same device for the identification of topological MZMs. △ Less

Submitted 11 October, 2022; v1 submitted 15 March, 2022; originally announced March 2022.

Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires

Authors: Lu Luo, Simone Assali, Mahmoud R. M. Atalla, Sebastian Koelling, Anis Attiaoui, Gérard Daligou, Sara Martí, J. Arbiol, Oussama Moutanabbir

Abstract: Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxation in Ge/Ge0.92Sn0.08 core-shell nanowire heterostructures to implement highly responsive, room-temperature short-wave infrared nanoscale photodetect… ▽ More Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxation in Ge/Ge0.92Sn0.08 core-shell nanowire heterostructures to implement highly responsive, room-temperature short-wave infrared nanoscale photodetectors. Atomic-level studies confirm the uniform shell composition and its higher crystallinity with respect to thin films counterparts. The demonstrated Ge/Ge0.92Sn0.08 p-type field-effect nanowire transistors exhibit superior optoelectronic properties achieving simultaneously a relatively high mobility, a high ON/OFF ratio, and a high responsivity, in addition to a broadband absorption in the short-wave infrared range. Indeed, the reduced bandgap of the Ge0.92Sn0.08 shell yields an extended cutoff wavelength of 2.1 um, with a room-temperature responsivity reaching 2.7 A/W at 1550 nm. These results highlight the potential of Ge/Ge1-xSnx core/shell nanowires as silicon-compatible building blocks for nanoscale integrated infrared photonics. △ Less

Submitted 25 March, 2022; v1 submitted 10 November, 2021; originally announced November 2021.

Comments: 22 pages, 4 figures, 1 Tables, 5 Supplementary information Figures

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Authors: Daria V. Beznasyuk, Sara Martí-Sánchez, Jung-Hyun Kang, Rawa Tanta, Mohana Rajpalke, Tomaš Stankevič, Anna Wulff Christensen, Maria Chiara Spadaro, Roberto Bergamaschini, Nikhil N. Maka, Christian Emanuel N. Petersen, Damon J. Carrad, Thomas Sand Jespersen, Jordi Arbiol, Peter Krogstrup

Abstract: Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatte… ▽ More Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In$_x$Ga$_{1-x}$As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high quality InAs transport channels with the field-effect electron mobility over~10000~cm$^2$V$^{-1}$s$^{-1}$. This is twice as high as for non-optimized samples and among the highest reported for InAs selective area grown nanostructures. △ Less

Submitted 4 February, 2022; v1 submitted 29 March, 2021; originally announced March 2021.

Comments: Main text: 9 pages, 5 figures Supporting Information is available at https://erda.ku.dk/archives/d3b11c9d399dd9a715c5e2c84870e3c4/published-archive.html

Report number: NBI QDEV 2022

Enhancement of Proximity Induced Superconductivity in a Planar Ge Hole Gas

Authors: Kushagra Aggarwal, Andrea Hofmann, Daniel Jirovec, Ivan Prieto, Amir Sammak, Marc Botifoll, Sara Marti-Sanchez, Menno Veldhorst, Jordi Arbiol, Giordano Scappucci, Jeroen Danon, Georgios Katsaros

Abstract: Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust ag… ▽ More Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large \IcRn \ products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 Tesla paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip. △ Less

Submitted 19 February, 2021; v1 submitted 1 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Research 3, 022005 (2021)

A singlet triplet hole spin qubit in planar Ge

Authors: Daniel Jirovec, Andrea Hofmann, Andrea Ballabio, Philipp M. Mutter, Giulio Tavani, Marc Botifoll, Alessandro Crippa, Josip Kukucka, Oliver Sagi, Frederico Martins, Jaime Saez-Mollejo, Ivan Prieto, Maksim Borovkov, Jordi Arbiol, Daniel Chrastina, Giovanni Isella, Georgios Katsaros

Abstract: Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the c… ▽ More Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor-difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 $μ$s which we extend beyond 150 $μ$s with echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are on par with Ge single spin qubits, but they can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies. △ Less

Submitted 7 April, 2021; v1 submitted 27 November, 2020; originally announced November 2020.

Disentangling Phonon Channels in Nanoscale Thermal Transport

Authors: Samik Mukherjee, Marcin Wajs, Maria de la Mata, Uri Givan, Stephan Senz, Jordi Arbiol, Sebastien Francoeur, Oussama Moutanabbir

Abstract: Phonon surface scattering has been at the core of heat transport engineering in nanoscale structures and devices. Herein, we demonstrate that this phonon pathway can be the sole mechanism only below a characteristic, size-dependent temperature. Above this temperature, the lattice phonon scattering co-exist along with surface effects. By artificially controlling mass disorder and lattice dynamics a… ▽ More Phonon surface scattering has been at the core of heat transport engineering in nanoscale structures and devices. Herein, we demonstrate that this phonon pathway can be the sole mechanism only below a characteristic, size-dependent temperature. Above this temperature, the lattice phonon scattering co-exist along with surface effects. By artificially controlling mass disorder and lattice dynamics at the atomic-level in nanowires without affecting morphology, crystallinity, chemical composition, and electronic properties, the temperature-thermal conductivity-diameter triple parameter space is mapped, and the main phonon scattering mechanisms are disentangled. This led to the identification of the critical temperature at which the effect of lattice mass-disorder on thermal conductivity is suppressed to an extent that phonon transport becomes governed entirely by the surface. This behavior is discussed based on Landauer-Dutta-Lundstrom near-equilibrium transport model. The established framework provides the necessary input to further advance the design and modelling of phonon and heat transport in semiconductor nanoscale systems. △ Less

Submitted 8 July, 2020; originally announced July 2020.

Comments: 12 pages text, 4 Figures, 13 pages Supplementary Information

Journal ref: Phys. Rev. B 104, 075429 (2021)

Semiconductor - Ferromagnetic Insulator - Superconductor Nanowires: Stray Field and Exchange Field

Authors: Yu Liu, Saulius Vaitiekenas, Sara Marti-Sanchez, Christian Koch, Sean Hart, Zheng Cui, Thomas Kanne, Sabbir A. Khan, Rawa Tanta, Shivendra Upadhyay, Martin Espineira Cachaza, Charles M. Marcus, Jordi Arbiol, Kathryn A. Moler, Peter Krogstrup

Abstract: Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for design of heterostructures with complex material combinations and geometries. In this work we report on hybrid epitaxy of semiconductor - ferromagnetic insulator - superconductor (InAs/EuS/Al) nanowire heterostructures. We study the crystal growth and complex epitaxial matching of wurtzite InAs… ▽ More Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for design of heterostructures with complex material combinations and geometries. In this work we report on hybrid epitaxy of semiconductor - ferromagnetic insulator - superconductor (InAs/EuS/Al) nanowire heterostructures. We study the crystal growth and complex epitaxial matching of wurtzite InAs / rock-salt EuS interfaces as well as rock-salt EuS / face-centered cubic Al interfaces. Because of the magnetic anisotropy originating from the nanowire shape, the magnetic structure of the EuS phase are easily tuned into single magnetic domains. This effect efficiently ejects the stray field lines along the nanowires. With tunnel spectroscopy measurements of the density of states, we show the material has a hard induced superconducting gap, and magnetic hysteretic evolution which indicates that the magnetic exchange fields are not negligible. These hybrid nanowires fulfil key material requirements for serving as a platform for spin-based quantum applications, such as scalable topological quantum computing. △ Less

Submitted 8 October, 2019; originally announced October 2019.

Comments: 15 pages, 5 figures

Report number: NBI QDEV 2019

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

Authors: Yu Liu, Alessandra Luchini, Sara Martí-Sánchez, Christian Koch, Sergej Schuwalow, Sabbir A. Khan, Tomaš Stankevič, Sonia Francoua, Jose R. L. Mardegan, Jonas A. Krieger, Vladimir N. Strocov, Jochen Stahn, Carlos A. F. Vaz, Mahesh Ramakrishnan, Urs Staub, Kim Lefmann, Gabriel Aeppli, Jordi Arbiol, Peter Krogstrup

Abstract: Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field and local proximitized magnetic exchange. In this work, we present lattice matched hybrid epitaxy of semiconductor - ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure as well as their electronic and magnetic chara… ▽ More Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field and local proximitized magnetic exchange. In this work, we present lattice matched hybrid epitaxy of semiconductor - ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure as well as their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the bandgap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs. Induced moments in the adjacent InAs layers were not detected although our ab initio calculations indicate a small exchange field in the InAs layer. This work presents a step towards realizing high quality semiconductor - ferromagnetic insulator hybrids, which is a critical requirement for development of various quantum and spintronic applications without external magnetic fields. △ Less

Submitted 19 August, 2019; originally announced August 2019.

Report number: QDEV NBI2019

Sub-20 nm Nanopores Sculptured by a Single Nanosecond Laser Pulse

Authors: Yanwen Yuan, Guangyuan Li, Hamed Zaribafzadeh, María de la Mata, Pablo Castro-Hartmann, Qing Zhang, Jordi Arbiol, Qihua Xiong

Abstract: Single-molecule based 3rd generation DNA sequencing technologies have been explored with tremendous effort, among which nanopore sequencing is considered as one of the most promising to achieve the goal of $1,000 genome project towards personalized medicine. Solid state nanopore is consented to be complementary to protein nanopore and subjected to extensive investigations in the past decade. Howev… ▽ More Single-molecule based 3rd generation DNA sequencing technologies have been explored with tremendous effort, among which nanopore sequencing is considered as one of the most promising to achieve the goal of $1,000 genome project towards personalized medicine. Solid state nanopore is consented to be complementary to protein nanopore and subjected to extensive investigations in the past decade. However, the prevailing solid-state nanopore preparation still relies on focused ion or electron beams, which are expensive and time consuming. Here we demonstrate the fabrication of nanopores down to 19 nm with a single nanosecond laser pulse. The laser drilling process is understood based upon a 2D axisymmetric transient heat transfer model, which predicts the laser fluence-dependent pore size distribution and shape with excellent agreement to electron microscopy and tomography analysis. As-drilled nanopore devices (26 nm) exhibit adequate sensitivity to detect single DNA molecule translocations and discriminate unfolded or folded events. Sub-10 nm nanopores can be readily achieved upon a thin layer of alumina deposition by atomic layer deposition, which further improves the DNA translocation signal to noise ratio considerably. Our work provides a solution for fast, low-cost and efficient large-scale fabrication of solid state nanopore devices for the 3rd generation nanopore sequencing. △ Less

Submitted 21 June, 2018; originally announced June 2018.

Comments: The work of this paper was done in 2013

Template-assisted scalable nanowire networks

Authors: Martin Friedl, Kris Cerveny, Pirmin Weigele, Gozde Tutuncuoglu, Sara Martí-Sánchez, Chunyi Huang, Taras Patlatiuk, Heidi Potts, Zhiyuan Sun, Megan O. Hill, Lucas Güniat, Wonjong Kim, Mahdi Zamani, Vladimir G. Dubrovskii, Jordi Arbiol, Lincoln J. Lauhon, Dominik Zumbuhl, Anna Fontcuberta i Morral

Abstract: Topological qubits based on Majorana fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires (NWs) are a promising medium for hosting these kinds of qubits, though branched NWs are needed to perform qubit manipulations. Here we report gold-free templated growth of III-V NWs by molecula… ▽ More Topological qubits based on Majorana fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires (NWs) are a promising medium for hosting these kinds of qubits, though branched NWs are needed to perform qubit manipulations. Here we report gold-free templated growth of III-V NWs by molecular beam epitaxy using an approach that enables patternable and highly regular branched NW arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes (NMs) yielding laterally-oriented, low-defect InAs and InGaAs NWs whose shapes are determined by surface and strain energy minimization. By controlling NM width and growth time, we demonstrate the formation of compositionally graded NWs with cross-sections less than 50 nm. Scaling the NWs below 20 nm leads to the formation of homogenous InGaAs NWs which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance towards scalable topological quantum computing. △ Less

Submitted 16 April, 2018; v1 submitted 1 March, 2018; originally announced March 2018.

Comments: 20 pages, 3 figures

Field effect enhancement in buffered quantum nanowire networks

Authors: Filip Krizek, Joachim E. Sestoft, Pavel Aseev, Sara Marti-Sanchez, Saulius Vaitiekenas, Lucas Casparis, Sabbir A. Khan, Yu Liu, Tomas Stankevic, Alexander M. Whiticar, Alexandra Fursina, Frenk Boekhout, Rene Koops, Emanuele Uccelli, Leo P. Kouwenhoven, Charles M. Marcus, Jordi Arbiol, Peter Krogstrup

Abstract: III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geomet… ▽ More III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications. △ Less

Submitted 5 April, 2018; v1 submitted 21 February, 2018; originally announced February 2018.

Report number: NBI-QDEV 2018

Journal ref: Phys. Rev. Materials 2, 093401 (2018)

Selective Area Grown Semiconductor-Superconductor Hybrids: A Basis for Topological Networks

Authors: S. Vaitiekėnas, A. M. Whiticar, M. T. Deng, F. Krizek, J. E. Sestoft, C. J. Palmstrøm, S. Marti-Sanchez, J. Arbiol, P. Krogstrup, L. Casparis, C. M. Marcus

Abstract: We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features in agreement with theory. Coulomb peak spacing in parallel magnetic field displays overshoot, indic… ▽ More We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features in agreement with theory. Coulomb peak spacing in parallel magnetic field displays overshoot, indicating an oscillating discrete near-zero subgap state consistent with device length. Finally, we investigate a loop network, finding strong spin-orbit coupling and a coherence length of several microns. These results demonstrate the potential of this platform for scalable topological networks among other applications. △ Less

Submitted 11 September, 2018; v1 submitted 12 February, 2018; originally announced February 2018.

Comments: NBI QDEV 2018

Journal ref: Phys. Rev. Lett. 121, 147701 (2018)

UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices

Authors: Jonas Lähnemann, Martien Den Hertog, Pascal Hille, María de la Mata, Thierry Fournier, Jörg Schörmann, Jordi Arbiol, Martin Eickhoff, Eva Monroy

Abstract: We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark cu… ▽ More We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark current and an increase of the photosensitivity. A significant dispersion in the magnitude of dark currents for different single nanowires is attributed to the coalescence of nanowires with displaced nanodisks, reducing the effective length of the heterostructure. A larger number of active nanodisks and AlN barriers in the current path results in lower dark current and higher photosensitivity, and improves the sensitivity of the nanowire to variations in the illumination intensity (improved linearity). Additionally, we observe a persistence of the photocurrent, which is attributed to a change of the resistance of the overall structure, particularly the GaN stem and cap sections. In consequence, the time response is rather independent of the dark current. △ Less

Submitted 20 June, 2017; v1 submitted 27 April, 2016; originally announced April 2016.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters (2016), copyright (C) American Chemical Society after peer review. To access the final edited and published work see http://dx.doi.org/10.1021/acs.nanolett.6b00806

Journal ref: Nano Letters 16, 3260 (2016)

Long-lived excitons in GaN/AlN nanowire heterostructures

Authors: M. Beeler, C. B. Lim, P. Hille, J. Bleuse, J. Schörmann, M. de la Mata, J. Arbiol, M. Eickhoff, E. Monroy

Abstract: GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Do** the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range… ▽ More GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Do** the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range of a few MV/cm associated to the spontaneous and piezoelectric polarization, and a radial piezoelectric contribution associated to the shear components of the lattice strain. At low dopant concentrations, a large electron-hole separation in both the axial and radial directions is present. The relatively weak radial electric fields, which are about one order of magnitude smaller than the axial fields, are rapidly screened by do**. This bidirectional screening leads to a radial and axial centralization of the hole underneath the electron, and consequently, to large decreases in PL decay times, in addition to luminescence blue shifts. △ Less

Submitted 20 April, 2015; v1 submitted 24 December, 2014; originally announced December 2014.

Journal ref: Phys. Rev. B 91, 205440 (2015)

Exciton Footprint of Self-assembled AlGaAs Quantum Dots in Core-Shell Nanowires

Authors: Yannik Fontana, Pierre Corfdir, Barbara Van Hattem, Eleonora Russo-Averchi, Martin Heiss, Samuel Sonderegger, Cesar Magen, Jordi Arbiol, Richard T. Phillips, Anna Fontcuberta i Morral

Abstract: Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich quantum dots nested in the shell of GaAs-AlGaAs core-shell nanowires. We used optical spectroscopy to resolve the splitting resulting from the exchange terms and ext… ▽ More Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich quantum dots nested in the shell of GaAs-AlGaAs core-shell nanowires. We used optical spectroscopy to resolve the splitting resulting from the exchange terms and extract the main parameters of the emitters. Our results indicate that the quantum dots can host neutral as well as charges excitonic complexes and that the excitons exhibit a slightly elongated footprint, with the main axis tilted with respect to the growth axis. GaAs-AlGaAs emitters in a nanowire are particularly promising for overcoming the limitations set by strain in other systems, with the benefit of being integrated in a versatile photonic structure. △ Less

Submitted 23 July, 2014; v1 submitted 1 June, 2014; originally announced June 2014.

Journal ref: Phys. Rev. B, 90 (2014) 075307

Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium do**

Authors: P. Hille, J. Müßener, P. Becker, M. de la Mata, N. Rosemann, C. Magén, J. Arbiol, J. Teubert, S. Chatterjee, J. Schörmann, M. Eickhoff

Abstract: We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of Germanium at concentrations above $10^{20}\,\text{cm}^{-3}$ shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescenc… ▽ More We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of Germanium at concentrations above $10^{20}\,\text{cm}^{-3}$ shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration a degradation of the photoluminescence properties is not observed. △ Less

Submitted 13 February, 2014; originally announced February 2014.

Comments: Manuscript including Supplemental material (15 pages, 5 figures)

Journal ref: Appl. Phys. Lett. 104, 102104 (2014)

Carrier Confinement in GaN/AlGaN Nanowire Heterostructures for 0 < x <= 1

Authors: F. Furtmayr, J. Teubert, P. Becker, S. Conesa-Boj, J. R. Morante, J. Arbiol, A. Chernikov, S. Schäfer, S. Chatterjee, M. Eickhoff

Abstract: The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution transmission electron microscopy reveals the presence of a lateral AlGaN shell due to a composition dependent lateral growth rate of the barrier material. The… ▽ More The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution transmission electron microscopy reveals the presence of a lateral AlGaN shell due to a composition dependent lateral growth rate of the barrier material. The structural properties are used as input parameters for three dimensional numerical simulations of the confinement which show that the presence of the AlGaN shell has to be considered to explain the observed dependence of the emission energy on the Al concentration in the barrier. The simulations reveal that the maximum in the emission energy for x ~ 30% is assigned to the smallest lateral strain gradient and consequently the lowest radial internal electric fields in the nanodiscs. Higher Al-concentrations in the barrier cause high radial electric fields that can overcome the exciton binding energy and result in substantially reduced emission intensities. Effects of polarization-induced axial internal electric fields on the photoluminescence characteristics have been investigated using nanowire samples with nanodisc heights ranging between 1.2 nm and 3.5 nm at different Al concentrations. The influence of the quantum confined Stark effect is significantly reduced compared to GaN/AlGaN quantum well structures which is attributed to the formation of misfit dislocations at the heterointerfaces which weakens the internal electric polarization fields. △ Less

Submitted 15 September, 2011; originally announced September 2011.

Journal ref: Phys. Rev. B 84, 205303 (2011)

Phonon confinement and plasmon-phonon interaction in nanowire based quantum wells

Authors: Bernt Ketterer, Jordi Arbiol, Anna Fontcuberta i Morral

Abstract: Resonant Raman spectroscopy is realized on closely spaced nanowire based quantum wells. Phonon quantization consistent with 2.4 nm thick quantum wells is observed, in agreement with cross-section transmission electron microscopy measurements and photoluminescence experiments. The creation of a high density plasma within the quantized structures is demonstrated by the observation of coupled plasmon… ▽ More Resonant Raman spectroscopy is realized on closely spaced nanowire based quantum wells. Phonon quantization consistent with 2.4 nm thick quantum wells is observed, in agreement with cross-section transmission electron microscopy measurements and photoluminescence experiments. The creation of a high density plasma within the quantized structures is demonstrated by the observation of coupled plasmon-phonon modes. The density of the plasma and thereby the plasmon-phonon interaction is controlled with the excitation power. This work represents a base for further studies on confined high density charge systems in nanowires. △ Less

Submitted 12 May, 2011; v1 submitted 25 January, 2011; originally announced January 2011.

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Authors: Martin Heiß, Sonia Conesa-Boj, Jun Ren, Hsiang-Han Tseng, Adam Gali, Andreas Rudolph, Emanuele Uccelli, Francesca Peiro, Joan Ramon Morante, Dieter Schuh, Elisabeth Reiger, Efthimios Kaxiras, Jordi Arbiol, Anna Fontcuberta i Morral

Abstract: A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In… ▽ More A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the bulk GaAs band gap, while regions composed of a nonperiodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to determine the band alignment between these two crystalline phases. Our first-principles electronic structure calculations within density functional theory, employing a hybrid-exchange functional, predict band offsets and effective masses in good agreement with experimental results. △ Less

Submitted 23 November, 2010; originally announced November 2010.

Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots

Authors: Martin Heiß, Bernt Ketterer, Emanuele Uccelli, Joan Ramon Morante, Jordi Arbiol, Anna Fontcuberta i Morral

Abstract: Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550°C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and elec… ▽ More Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550°C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium lowering the growth temperature does not have an effect in increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575°C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit extremely sharp luminescence. △ Less

Submitted 23 November, 2010; originally announced November 2010.

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects

Authors: I. Zardo, S. Conesa-Boj, F. Peiro, J. R. Morante, J. Arbiol, E. Uccelli, G. Abstreiter, A. Fontcuberta i Morral

Abstract: Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization ar… ▽ More Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm-1 of the E1(TO). The transversal optical mode related to the wurtzite structure, E2H, is measured between 254 and 256 cm-1, depending on the wurtzite content. The azymutal dependence of E2H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E1(TO) and E2H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on {110} facets is presented. △ Less

Submitted 7 December, 2009; v1 submitted 27 October, 2009; originally announced October 2009.

Comments: 28 pages, 12 figures. to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 80, 245324 (2009)

Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires

Authors: D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Rossler, F. Peiro, J. R. Morante, L. Samuelson, G. Abstreiter, A. Fontcuberta i Morral

Abstract: The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.5… ▽ More The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band-offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms. △ Less

Submitted 9 July, 2009; originally announced July 2009.

Comments: 24 pages

Journal ref: Phys. Rev. B 80, 245325 (2009)

Unusual magnetic behavior in ferrite hollow nanospheres

Authors: E. Lima Jr, J. M. Vargas, R. D. Zysler, H. R. Rechenberg, J. Arbiol, G. F. Goya, A. Ibarra, M. R. Ibarra

Abstract: We report unusual magnetic behavior in iron oxide hollow nanospheres of 9.3 $nm$ in diameter. The large fraction of atoms existing at the inner and outer surfaces gives rise to a high magnetic disorder. The overall magnetic behavior can be explained considering the coexistence of a soft superparamagnetic phase and a hard phase corresponding to the highly frustrated cluster-glass like phase at th… ▽ More We report unusual magnetic behavior in iron oxide hollow nanospheres of 9.3 $nm$ in diameter. The large fraction of atoms existing at the inner and outer surfaces gives rise to a high magnetic disorder. The overall magnetic behavior can be explained considering the coexistence of a soft superparamagnetic phase and a hard phase corresponding to the highly frustrated cluster-glass like phase at the surface regions. △ Less

Submitted 21 April, 2008; originally announced April 2008.

Comments: 4 pages, 5 figures

Strain-driven elastic and orbital-ordering effects on thickness-dependent properties of manganite thin films

Authors: I. C. Infante, F. Sánchez, J. Fontcuberta, M. Wojcik, E. Jedryka, S. Estradé, F. Peiró, J. Arbiol, V. Laukhin, J. P. Espinós

Abstract: We report on the structural and magnetic characterization of (110) and (001) La2/3Ca1/3MnO3 (LCMO) epitaxial thin films simultaneously grown on (110) and (001)SrTiO3 substrates, with thicknesses t varying between 8 nm and 150 nm. It is found that while the in-plane interplanar distances of the (001) films are strongly clamped to those of the substrate and the films remain strained up to well abo… ▽ More We report on the structural and magnetic characterization of (110) and (001) La2/3Ca1/3MnO3 (LCMO) epitaxial thin films simultaneously grown on (110) and (001)SrTiO3 substrates, with thicknesses t varying between 8 nm and 150 nm. It is found that while the in-plane interplanar distances of the (001) films are strongly clamped to those of the substrate and the films remain strained up to well above t=100 nm, the (110) films relax much earlier. Accurate determination of the in-plane and out-of-plane interplanar distances has allowed concluding that in all cases the unit cell volume of the manganite reduces gradually when increasing thickness, approaching the bulk value. It is observed that the magnetic properties (Curie temperature and saturation magnetization) of the (110) films are significantly improved compared to those of (001) films. These observations, combined with 55Mn-nuclear magnetic resonance data and X-ray photoemission spectroscopy, signal that the depression of the magnetic properties of the more strained (001)LCMO films is not caused by an elastic deformation of the perovskite lattice but rather due to the electronic and chemical phase separation caused by the substrate-induced strain. On the contrary, the thickness dependence of the magnetic properties of the less strained (110)LCMO films are simply described by the elastic deformation of the manganite lattice. We will argue that the different behavior of (001) and (110)LCMO films is a consequence of the dissimilar electronic structure of these interfaces. △ Less

Submitted 27 August, 2007; originally announced August 2007.

Comments: 16 pages, 15 figures

Structural and magnetic properties of ZnO:TM (TM: Co,Mn) nanopowders

Authors: D. Rubi, A. Calleja, J. Arbiol, X. G. Capdevila, M. Segarra, Ll. Aragones, J. Fontcuberta

Abstract: We report on the structural and magnetic characterization of Co0.1Zn0.9O and Mn0.1Zn0.9O nanopowders obtained by a soft chemistry route. We show that those samples fired at low temperatures display a ferromagnetic interaction that can not be attributed to the presence of impurities. A magnetic aging mechanism is observed, reflecting the key role played by defects in the stabilization of ferromag… ▽ More We report on the structural and magnetic characterization of Co0.1Zn0.9O and Mn0.1Zn0.9O nanopowders obtained by a soft chemistry route. We show that those samples fired at low temperatures display a ferromagnetic interaction that can not be attributed to the presence of impurities. A magnetic aging mechanism is observed, reflecting the key role played by defects in the stabilization of ferromagnetism in this kind of diluted magnetic semiconductors. △ Less

Submitted 1 August, 2006; originally announced August 2006.

Comments: Presented at JEMS-06. Submitted to JMMM