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Single Crystal Growth and Transport Properties of van der Waals Materials $AB$Te$_\mathbf{4}$ ($A/B$ = Ti, Zr, Hf)
Authors:
Yuto Hasuo,
Takahiro Urata,
Masaaki Araidai,
Yuji Tsuchiya,
Satoshi Awaji,
Hiroshi Ikuta
Abstract:
Monolayers of $AB$Te$_4$ ($A$/$B$ = Ti, Zr, Hf) were theoretically predicted to be two-dimensional topological insulators, but little has been known about the physical properties of these compounds. Here, we report on the single crystal growth, bulk transport properties, and band structure calculations of these compounds. The magnetotransport properties indicate that all three compounds are multi-…
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Monolayers of $AB$Te$_4$ ($A$/$B$ = Ti, Zr, Hf) were theoretically predicted to be two-dimensional topological insulators, but little has been known about the physical properties of these compounds. Here, we report on the single crystal growth, bulk transport properties, and band structure calculations of these compounds. The magnetotransport properties indicate that all three compounds are multi-carrier systems. The experimental results of ZrTiTe$_4$ and HfTiTe$_4$ can be well fitted by the multi-carrier formula assuming two types of carriers, while three carrier components were necessary for HfZrTe$_4$. Interestingly, one of the carrier mobilities of HfZrTe$_4$ exceeded 1000 cm$^2$V$^{-1}$s$^{-1}$, which was nearly one order in magnitude larger than the carrier mobilities of ZrTiTe$_4$ and HfTiTe$_4$. Our band structure calculations showed that all three compounds are semimetals consistent with the magnetotransport properties. The band structure around the $Γ$-point of HfZrTe$_4$ exhibits features that are distinct from the other two compounds, which is likely the reason of the different carrier properties.
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Submitted 5 January, 2024;
originally announced January 2024.
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Negative-charge-storing mechanism of potassium-ion electrets used for vibration-powered generators: Microscopic study of a-SiO2 with and without potassium atoms
Authors:
Toru Nakanishi,
Takeshi Miyajima,
Kenta Chokawa,
Masaaki Araidai,
Hiroshi Toshiyoshi,
Tatsuhiko Sugiyama,
Gen Hashiguchi,
Kenji Shiraishi
Abstract:
A potassium-ion electret, which is a key element of vibration-powered microelectromechanical generators, can store negative charge almost permanently. However, the mechanism by which this negative charge is stored is still unclear. We theoretically study the atomic and electronic structures of amorphous silica (a-SiO2) with and without potassium atoms using first-principles molecular-dynamics calc…
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A potassium-ion electret, which is a key element of vibration-powered microelectromechanical generators, can store negative charge almost permanently. However, the mechanism by which this negative charge is stored is still unclear. We theoretically study the atomic and electronic structures of amorphous silica (a-SiO2) with and without potassium atoms using first-principles molecular-dynamics calculations. Our calculations show that a fivefold-coordinated Si atom with five Si-O bonds (an SiO5 structure) is the characteristic local structure of a-SiO2 with potassium atomsm, which becomes negatively charged and remains so even after removal of the potassium atoms. These results indicate that this SiO5 structure is the physical origin of the robust negative charge observed in potassium-ion electrets. We also find that the SiO5 structure has a Raman peak at 1000cm-1.
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Submitted 9 September, 2020;
originally announced September 2020.
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Influence of edge magnetization and electric fields on zigzag silicene, germanene and stanene nanoribbons
Authors:
Ayami Hattori,
Keiji Yada,
Masaaki Araidai,
Masatoshi Sato,
Kenji Shiraishi,
Yukio Tanaka
Abstract:
Using a multi-orbital tight-binding model, we have studied the edge states of zigzag silicene, germanene, and stanene nanoribbons (ZSiNRs, ZGeNRs and ZSnNRs, respectively) in the presence of the Coulomb interaction and a vertical electric field. The resulting edge states have non-linear energy dispersions due to multi-orbital effects, and the nanoribbons show induced magnetization at the edges. Ow…
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Using a multi-orbital tight-binding model, we have studied the edge states of zigzag silicene, germanene, and stanene nanoribbons (ZSiNRs, ZGeNRs and ZSnNRs, respectively) in the presence of the Coulomb interaction and a vertical electric field. The resulting edge states have non-linear energy dispersions due to multi-orbital effects, and the nanoribbons show induced magnetization at the edges. Owing to this non-linear dispersion, ZSiNRs, ZGeNRs and ZSnNRs may not provide superior performance in field effect transistors, as has been proposed from single-orbital tight-binding model calculations. We propose an effective low-energy model that describes the edge states of ZSiNRs, ZGeNRs, and ZSnNRs. We demonstrate that the edge states of ZGeNR and ZSnNR show anti-crossing of bands with opposite spins, even if only out-of-plane edge magnetization is present. The ability to tune the spin polarizations of the edge states by applying an electric field points to future opportunities to fabricate silicene, germanene and stanene nanoribbons as spintronics devices.
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Submitted 1 October, 2018;
originally announced October 2018.
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Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons
Authors:
Ayami Hattori,
Sho Tanaya,
Keiji Yada,
Masaaki Araidai,
Masatoshi Sato,
Yasuhiro Hatsugai,
Kenji Shiraishi,
Yukio Tanaka
Abstract:
We investigate the energy dispersion of the edge states in zigzag silicene, germanene and stanene nanoribbons with and without hydrogen termination based on a multi-orbital tight-binding model. Since the low buckled structures are crucial for these materials, both the $π$ and $σ$ orbitals have a strong influence on the edge states, different from the case for graphene nanoribbons. The obtained dis…
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We investigate the energy dispersion of the edge states in zigzag silicene, germanene and stanene nanoribbons with and without hydrogen termination based on a multi-orbital tight-binding model. Since the low buckled structures are crucial for these materials, both the $π$ and $σ$ orbitals have a strong influence on the edge states, different from the case for graphene nanoribbons. The obtained dispersion of helical edge states is nonlinear, similar to that obtained by first-principles calculations. On the other hand, the dispersion derived from the single-orbital tight-binding model is always linear. Therefore, we find that the non-linearity comes from the multi-orbital effects, and accurate results cannot be obtained by the single-orbital model but can be obtained by the multi-orbital tight-binding model. We show that the multi-orbital model is essential for correctly understanding the dispersion of the edge states in tetragen nanoribbons with a low buckled geometry.
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Submitted 30 December, 2016; v1 submitted 16 April, 2016;
originally announced April 2016.
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Field emission mechanisms of graphitic nanostructures
Authors:
Masaaki Araidai,
Yasuhiro Nakamura,
Kazuyuki Watanabe
Abstract:
Field emission (FE) and the electronic-states origin of graphitic nanostructures were investigated by first-principles calculations based on time-dependent density-functional theory. We find that the FE current from graphitic ribbons changes remarkably depending on the hydrogen termination and the direction of the applied electric field. Also, the FE current from graphene sheets shows a dramatic…
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Field emission (FE) and the electronic-states origin of graphitic nanostructures were investigated by first-principles calculations based on time-dependent density-functional theory. We find that the FE current from graphitic ribbons changes remarkably depending on the hydrogen termination and the direction of the applied electric field. Also, the FE current from graphene sheets shows a dramatic increase around vacancy defects. We verified, through the analysis of local electronic structures and energy distributions of emitted electrons, that the dangling-bond (or $σ$) character is responsible for these results and governs the nature of the FE of graphitic nanostructures.
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Submitted 21 October, 2004;
originally announced October 2004.
