-
Pressure-induced optical anisotropy of HfS$_2$
Authors:
Igor Antoniazzi,
Tomasz Woźniak,
Amit Pawbake,
Natalia Zawadzka,
Magdalena Grzeszczyk,
Zahir Muhammad,
Weisheng Zhao,
Jordi Ibáñez,
Clement Faugeras,
Maciej R. Molas,
Adam Babiński
Abstract:
The effect of pressure on Raman scattering (RS) in the bulk HfS$_2$ is investigated under hydrostatic and non-hydrostatic conditions. The RS lineshape does not change significantly in the hydrostatic regime, showing a systematic blueshift of the spectral features. In a non-hydrostatic environment, seven peaks emerge in the spectrum ($P$=7 GPa) dominating the lineshape up to $P$=10.5 GPa. The chang…
▽ More
The effect of pressure on Raman scattering (RS) in the bulk HfS$_2$ is investigated under hydrostatic and non-hydrostatic conditions. The RS lineshape does not change significantly in the hydrostatic regime, showing a systematic blueshift of the spectral features. In a non-hydrostatic environment, seven peaks emerge in the spectrum ($P$=7 GPa) dominating the lineshape up to $P$=10.5 GPa. The change in the RS lineshape manifests a pressure-induced phase transition in HfS$_2$. The simultaneous observation of both low-pressure (LP) and high-pressure (HP) related RS peaks suggests the corresponding coexistence of two different phases over a large pressure range. We found that the HP-related phase is metastable, persisting during the decompression cycle down to $P$=1.2 GPa with the LP-related features finally recovering at even lower pressures. The angle-resolved polarized RS (ARPRS) performed under $P$=7.4 GPa revealed a strong in-plane anisotropy of both the LP-related A$_{1g}$ mode and the HP peaks. The anisotropy is related to the possible distortion of the structure induced by the non-hydrostatic component of the pressure. We describe the obtained results by the influence of the non-hydrostatic pressure on the observed phase transition. We interpret our results in terms of a distorted $Pnma$ phase as a possible HP induced structure of HfS$_2$.
△ Less
Submitted 29 February, 2024;
originally announced February 2024.
-
Ion-beam-milled graphite nanoribbons as mesoscopic carbon-based polarizers
Authors:
Marcin Muszyński,
Igor Antoniazzi,
Bruno Camargo
Abstract:
We demonstrate optical reflectivity and Raman responses of graphite microstructures as a function of light polarization when the incident light is applied perpendicular to the material's stacking direction (c-axis). For this, we employed novel graphite nanoribbons with edges polished through ion-beam etching. In this unique configuration, a strong polarization dependence of the D, G, and 2D Raman…
▽ More
We demonstrate optical reflectivity and Raman responses of graphite microstructures as a function of light polarization when the incident light is applied perpendicular to the material's stacking direction (c-axis). For this, we employed novel graphite nanoribbons with edges polished through ion-beam etching. In this unique configuration, a strong polarization dependence of the D, G, and 2D Raman modes is observed. At the same time, polarized reflectivity measurements demonstrate the potential of such a device as a carbon-based, on-chip polarizer. We discuss the advantages of the proposed fabrication method as opposed to the mechanical polishing of bulk crystals.
△ Less
Submitted 30 July, 2023;
originally announced July 2023.
-
Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material
Authors:
Arka Karmakar,
Tomasz Kazimierczuk,
Igor Antoniazzi,
Mateusz Raczyński,
Suji Park,
Houk Jang,
Takashi Taniguchi,
Kenji Watanabe,
Adam Babiński,
Abdullah Al-Mahboob,
Maciej R. Molas
Abstract:
High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenide (TMD) make it an ideal candidate for optoelectronic applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unli…
▽ More
High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenide (TMD) make it an ideal candidate for optoelectronic applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unlike the CT process. Our experiment shows that an efficient ET occurs from the 1Ls WSe2-to-MoS2 with an interlayer hBN, due to the resonant overlap** of the high-lying excitonic states between the two TMDs, resulting in enhanced HS MoS2 PL emission. This type of unconventional ET from the lower-to-higher optical bandgap material is not typical in the TMD HSs. With increasing temperature, the ET process becomes weaker due to the increased electron-phonon scattering, destroying the enhanced MoS2 emission. Our work provides new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.
△ Less
Submitted 23 March, 2023; v1 submitted 13 January, 2023;
originally announced January 2023.
-
The effect of temperature and excitation energy on Raman scattering in bulk HfS$_2$
Authors:
Igor Antoniazzi,
Natalia Zawadzka,
Magdalena Grzeszczyk,
Tomasz Woźniak,
Jordi Ibáñez,
Zahir Muhammad,
Weisheng Zhao,
Maciej R. Molas,
Adam Babiński
Abstract:
Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as a function of temperature (5 K $-$ 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A$_{\textrm{1g}}$ and E$_{\textrm{g}}$) modes with the temperature-induced blueshift in the low-temperature limit is observed. The…
▽ More
Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as a function of temperature (5 K $-$ 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A$_{\textrm{1g}}$ and E$_{\textrm{g}}$) modes with the temperature-induced blueshift in the low-temperature limit is observed. The low-temperature quenching of a mode $ω_1$ (134 cm$^{-1}$) and the emergence of a new mode at approx. 184 cm$^{-1}$, labeled Z, is reported. The optical anisotropy of the RS in HfS$_2$ is also reported, which is highly susceptible to the excitation energy. The apparent quenching of the A$_{\textrm{1g}}$ mode at $T$=5 K and of the E$_{\textrm{g}}$ mode at $T$=300 K in the RS spectrum excited with 3.06~eV excitation is also observed. We discuss the results in the context of possible resonant character of light-phonon interactions. Analyzed is also a possible effect of the iodine molecules intercalated in the van der Waals gaps between neighboring HfS$_2$ layers, which inevitably result from the growth procedure.
△ Less
Submitted 12 December, 2022;
originally announced December 2022.
-
Excitonic luminescence of iodine-intercalated HfS$_2$
Authors:
N. Zawadzka,
T. Woźniak,
M. Strawski,
I. Antoniazzi,
M. Grzeszczyk,
K. Olkowska-Pucko,
Z. Muhammad,
J. Ibanez,
W. Zhao,
J. Jadczak,
R. Stępniewski,
A. Babiński,
M. R. Molas
Abstract:
Photoluminescence from bulk HfS$_2$ grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the energy range of 1.4 - 1.5 eV. Two groups of the observed excitonic transitions followed by their replicas involving acoustic and optical phonons are distinguished using classical intensity correlation analysis. The emission is attributed to…
▽ More
Photoluminescence from bulk HfS$_2$ grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the energy range of 1.4 - 1.5 eV. Two groups of the observed excitonic transitions followed by their replicas involving acoustic and optical phonons are distinguished using classical intensity correlation analysis. The emission is attributed to the recombination of excitons bound to iodine (I$_2$) molecules intercalated between layers of HfS$_2$. The I$_2$ molecules are introduced to the crystal during the growth as halogen transport agents in the growth process. Their presence in the crystal is confirmed by secondary ion mass spectroscopy.
△ Less
Submitted 16 January, 2023; v1 submitted 18 September, 2022;
originally announced September 2022.
