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MentalBERT: Publicly Available Pretrained Language Models for Mental Healthcare
Authors:
Shaoxiong Ji,
Tianlin Zhang,
Luna Ansari,
Jie Fu,
Prayag Tiwari,
Erik Cambria
Abstract:
Mental health is a critical issue in modern society, and mental disorders could sometimes turn to suicidal ideation without adequate treatment. Early detection of mental disorders and suicidal ideation from social content provides a potential way for effective social intervention. Recent advances in pretrained contextualized language representations have promoted the development of several domain-…
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Mental health is a critical issue in modern society, and mental disorders could sometimes turn to suicidal ideation without adequate treatment. Early detection of mental disorders and suicidal ideation from social content provides a potential way for effective social intervention. Recent advances in pretrained contextualized language representations have promoted the development of several domain-specific pretrained models and facilitated several downstream applications. However, there are no existing pretrained language models for mental healthcare. This paper trains and release two pretrained masked language models, i.e., MentalBERT and MentalRoBERTa, to benefit machine learning for the mental healthcare research community. Besides, we evaluate our trained domain-specific models and several variants of pretrained language models on several mental disorder detection benchmarks and demonstrate that language representations pretrained in the target domain improve the performance of mental health detection tasks.
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Submitted 29 October, 2021;
originally announced October 2021.
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Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors
Authors:
Alessandro Grillo,
Enver Faella,
Aniello Pelella,
Filippo Giubileo,
Lida Ansari,
Farzan Gity,
Paul K. Hurley,
Niall McEvoy,
Antonio Di Bartolomeo
Abstract:
Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by enviro…
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Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by environmental pressure. Indeed, positive photoconductivity observed in high vacuum converts to negative photoconductivity when the pressure is rised. Density functional theory calculations confirm that physisorbed oxygen molecules on the PtSe_2 surface act as acceptors. The desorption of oxygen molecules from the surface, caused by light irradiation, leads to decreased carrier concentration in the channel conductivity. The understanding of the charge transfer occurring between the physisorbed oxygen molecules and the PtSe_2 film provides an effective route for modulating the density of carriers and the optical properties of the material.
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Submitted 20 July, 2021;
originally announced July 2021.
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Electronic and structural properties of rhombohedral [111] and [110] oriented ultra-thin bismuth nanowires
Authors:
Lida Ansari,
Farzan Gity,
James C. Greer
Abstract:
Structures and electronic properties of rhombohedral [111] and [110] bismuth nanowires are calculated with the use of density functional theory. The formation of an energy band gap from quantum confinement is studied and to improve estimates for the band gap the GW approximation is applied. The [111] oriented nanowires require surface bonds to be chemically saturated to avoid formation of metallic…
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Structures and electronic properties of rhombohedral [111] and [110] bismuth nanowires are calculated with the use of density functional theory. The formation of an energy band gap from quantum confinement is studied and to improve estimates for the band gap the GW approximation is applied. The [111] oriented nanowires require surface bonds to be chemically saturated to avoid formation of metallic surface states whereas the surface of the [110] nanowires do not support metallic surface states. It is found that the onset of quantum confinement in the surface passivated [111] nanowires occurs at larger critical dimensions than for the [110] nanowires. For the [111] oriented nanowires it is predicted that a band gap of approximately 0.5 eV can be formed at a diameter of approximately 6 nm, whereas for the [110] oriented nanowires a diameter of approximately 3 nm is required to achieve a similar band gap energy. The GW correction is also applied to estimates of the electron affinity, ionisation potentials and work functions for both orientations of the nanowires for various diameters below 5 nm. The magnitude of the energy band gaps that arise in bismuth at critical dimensions of a few nanometers are of the same order as for conventional bulk semiconductors.
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Submitted 19 September, 2016;
originally announced September 2016.
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Reinventing Solid State Electronics: Harnessing Quantum Confinement in Bismuth Thin Films
Authors:
Farzan Gity,
Lida Ansari,
Martin Lanius,
Peter Schüffelgen,
Gregor Mussler,
Detlev Grützmacher,
James C. Greer
Abstract:
Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages is achieved. As miniaturization continue…
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Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages is achieved. As miniaturization continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of do** to form rectifying junctions fails and heterojunction formation becomes extremely difficult. Here it is shown there is no need to introduce dopant atoms nor is the formation of a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved for the first time solely by manipulation of quantum confinement in approximately 2 nanometer thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this new quantum approach enables room temperature operation.
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Submitted 17 September, 2016;
originally announced September 2016.
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Browser Feature Usage on the Modern Web
Authors:
Peter Snyder,
Lara Ansari,
Cynthia Taylor,
Chris Kanich
Abstract:
Modern web browsers are incredibly complex, with millions of lines of code and over one thousand JavaScript functions and properties available to website authors. This work investigates how these browser features are used on the modern, open web. We find that JavaScript features differ wildly in popularity, with over 50% of provided features never used in the Alexa 10k.
We also look at how popul…
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Modern web browsers are incredibly complex, with millions of lines of code and over one thousand JavaScript functions and properties available to website authors. This work investigates how these browser features are used on the modern, open web. We find that JavaScript features differ wildly in popularity, with over 50% of provided features never used in the Alexa 10k.
We also look at how popular ad and tracking blockers change the distribution of features used by sites, and identify a set of approximately 10% of features that are disproportionately blocked (prevented from executing by these extensions at least 90% of the time they are used). We additionally find that in the presence of these blockers, over 83% of available features are executed on less than 1% of the most popular 10,000 websites.
We additionally measure a variety of aspects of browser feature usage on the web, including how complex sites have become in terms of feature usage, how the length of time a browser feature has been in the browser relates to its usage on the web, and how many security vulnerabilities have been associated with related browser features.
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Submitted 20 May, 2016;
originally announced May 2016.
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First Principle-based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors
Authors:
Lida Ansari,
Baruch Feldman,
Giorgos Fagas,
Carlos Martinez Lacambra,
Michael G. Haverty,
Kelin J. Kuhn,
Sadasivan Shankar,
James C. Greer
Abstract:
Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive geometries. In this paper, we explore a similar architecture for aggressively scaled devices with the channel consisting of doped carbon nanotubes (CNTs). Gate…
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Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive geometries. In this paper, we explore a similar architecture for aggressively scaled devices with the channel consisting of doped carbon nanotubes (CNTs). Gate all around (GAA) field effect transistor (FET) structures are investigated for n- and p-type do**. Current-voltage characteristics and sub-threshold characteristics for a CNTbased junctionless FET is compared with a junctionless silicon nanowire (SiNW) FET with comparable dimensions. Despite the higher on-current of the CNT channels, the device characteristics are poorer compared to the silicon devices due to the smaller CNT band gap.
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Submitted 15 March, 2013;
originally announced March 2013.
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Transport properties and electrical device characteristics with the TiMeS computational platform: application in silicon nanowires
Authors:
Dimpy Sharma,
Lida Ansari,
Baruch Feldman,
Marios Iakovidis,
James Greer,
Giorgos Fagas
Abstract:
Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a cross-platform quantum transport computation tool. Using first-principles electronic structure, it allows for flexible and efficient calculations of materials transport pr…
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Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a cross-platform quantum transport computation tool. Using first-principles electronic structure, it allows for flexible and efficient calculations of materials transport properties and realistic device simulations to extract current-voltage and transfer characteristics. We apply this computational method to the calculation of the mean free path in silicon nanowires with dopant and surface oxygen impurities. The dependence of transport on basis set is established, with the optimized double zeta polarized basis giving a reasonable compromise between converged results and efficiency. The current-voltage characteristics of ultrascaled (3 nm length) nanowire-based transistors with p-i-p and p-n-p do** profiles are also investigated. It is found that charge self-consistency affects the device characteristics more significantly than the choice of the basis set. These devices yield source-drain tunneling currents in the range of 0.5 nA (p-n-p junction) to 2 nA (p-i-p junction), implying that junctioned transistor designs at these length scales would likely fail to keep carriers out of the channel in the off-state.
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Submitted 5 February, 2013;
originally announced February 2013.
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Simulations of gated Si nanowires and 3-nm junctionless transistors
Authors:
Lida Ansari,
Baruch Feldman,
Giorgos Fagas,
Jean-Pierre Colinge,
James C. Greer
Abstract:
Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless gated Si nanowire transistors. Our primary predictions are that Si-based transistors are physically possible without major changes in design philosophy at scales of ~1 nm wire diameter and ~3 nm gate length, and that the…
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Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless gated Si nanowire transistors. Our primary predictions are that Si-based transistors are physically possible without major changes in design philosophy at scales of ~1 nm wire diameter and ~3 nm gate length, and that the junctionless transistor may be the only physically sensible design at these length scales. We also present investigations into atomic-level design factors such as dopant positioning and concentration.
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Submitted 24 March, 2010;
originally announced March 2010.
