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Effective uniaxial dielectric function tensor and optical phonons in ($\bar{2}01$)-plane oriented $β$-Ga$_2$O$_3$ films with equally-distributed six-fold rotation domains
Authors:
Alyssa Mock,
Steffen Richter,
Alexis Papamichail,
Vallery Stanishev,
Misagh Ghezellou,
Jawad Ul-Hassan,
Andreas Popp,
Saud Bin Anooz,
Daniella Gogova,
Praneeth Ranga,
Sriram Krishnamoorthy,
Rafal Korlacki,
Mathias Schubert,
Vanya Darakchieva
Abstract:
Monoclinic $β$-Ga$_2$O$_3$ films grown on $c$-plane sapphire have been shown to exhibit six $(\bar{2}01)$-plane oriented domains, which are equally-spaced-by-rotation around the surface normal and equally-sized-by-volume that render the film optical response effectively uniaxial. We derive and discuss an optical model suitable for ellipsometry data analysis of such films. We model mid- and far-inf…
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Monoclinic $β$-Ga$_2$O$_3$ films grown on $c$-plane sapphire have been shown to exhibit six $(\bar{2}01)$-plane oriented domains, which are equally-spaced-by-rotation around the surface normal and equally-sized-by-volume that render the film optical response effectively uniaxial. We derive and discuss an optical model suitable for ellipsometry data analysis of such films. We model mid- and far-infrared ellipsometry data from undoped and electrically insulating films with an effective uniaxial dielectric tensor based on projections of all phonon modes within the rotation domains parallel and perpendicular to the sample normal, i.e., to the reciprocal lattice vector $\mathbf{g}_{\bar{2}01}$. Two effective response functions are described by model, and found sufficient to calculate ellipsometry data that best-match measured ellipsometry data from a representative film. We propose to render either effective dielectric functions, or inverse effective dielectric functions, each separately for electric field directions parallel and perpendicular to $\mathbf{g}_{\bar{2}01}$, by sums of Lorentz oscillators, which permit to determine either sets of transverse optical phonon mode parameters, or sets of longitudinal optical phonon mode parameters, respectively. Transverse optical modes common to both dielectric functions can be traced back to single crystal modes with $B_{\mathrm{u}}$ character, while modes with $A_{\mathrm{u}}$ character only appear within the dielectric function for polarization perpendicular to the sample surface. The thereby obtained parameter sets reveal all phonon modes anticipated from averaging over the six-fold rotation domains of single crystal $β$-Ga$_2$O$_3$, but with slightly shifted transverse optical, and completely different longitudinal optical phonon modes.
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Submitted 10 April, 2024;
originally announced April 2024.
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Spontaneous polarization in NaNbO$_{3}$ film on NdGaO$_{3}$ and DyScO$_{3}$ substrates
Authors:
Kisung Kang,
Saud Bin Anooz,
Jutta Schwarzkopf,
Christian Carbogno
Abstract:
Pure NaNbO$_{3}$ is an antiferroelectric material at room temperature that irreversibly transforms to a ferroelectric polar state when subjected to an external electrical field or lattice strain. Experimentally, it has been observed that NaNbO$_{3}$ films grown on NdGaO$_{3}$ exhibit an electrical polarization along the [001]$_{\mathrm{PC}}$ direction, whereas films on DyScO$_{3}$ substrates exhib…
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Pure NaNbO$_{3}$ is an antiferroelectric material at room temperature that irreversibly transforms to a ferroelectric polar state when subjected to an external electrical field or lattice strain. Experimentally, it has been observed that NaNbO$_{3}$ films grown on NdGaO$_{3}$ exhibit an electrical polarization along the [001]$_{\mathrm{PC}}$ direction, whereas films on DyScO$_{3}$ substrates exhibit a polarization along the [011]$_{\mathrm{PC}}$ direction. These effects have been attributed to the realization of different lattice symmetries in the films due to the incorporation of lattice strain imposed by the use of oxide substrates with different lattice parameters. However, the underlying atomistic mechanisms of the resulting phase symmetry in the films are hardly clear, given that NaNbO$_{3}$ features a diverse and complex phase diagram. In turn, these also impede a straightforward tailoring and optimization of the resulting macroscopic properties on different substrates. To clarify this issue, we perform all-electron first-principles calculations for several potential NaNbO$_{3}$ polymorphs under stress and strain. The computed properties, including the ferroelectric polarization, reveal that an orthorhombic $Pmc2_{1}$ phase is realized on NdGaO$_{3}$ substrates since this is the only phase with an out-of-plane polarization under a compressive strain. Conversely, the monoclinic $Pm$ phase is consistent for the samples grown on DyScO$_{3}$ substrate, since this phase exhibits a spontaneous in-plane polarization along [011]$_{\mathrm{PC}}$ under tensile strain.
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Submitted 27 November, 2023; v1 submitted 22 November, 2023;
originally announced November 2023.
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Fingerprints of optical absorption in the perovskite LaInO$_{3}$: Insight from many-body theory and experiment
Authors:
Wahib Aggoune,
Klaus Irmscher,
Dmitrii Nabok,
Cecilia Vona,
Saud Bin Anooz,
Zbigniew Galazka,
Martin Albrecht,
Claudia Draxl
Abstract:
We provide a combined theoretical and experimental study of the electronic structure and the optical absorption edge of the orthorhombic perovskite LaInO$_{3}$. Employing density-functional theory and many-body perturbation theory, we predict a direct electronic quasiparticle band gap of about 5 eV and an effective electron (hole) mass of 0.31 (0.48) m$_{0}$. We find the lowest-energy excitation a…
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We provide a combined theoretical and experimental study of the electronic structure and the optical absorption edge of the orthorhombic perovskite LaInO$_{3}$. Employing density-functional theory and many-body perturbation theory, we predict a direct electronic quasiparticle band gap of about 5 eV and an effective electron (hole) mass of 0.31 (0.48) m$_{0}$. We find the lowest-energy excitation at 0.2 eV below the fundamental gap, reflecting a sizeable electron-hole attraction. Since the transition from the valence band maximum (VBM, $Γ$ point) is, however, dipole forbidden the onset is characterized by weak excitations from transitions around it. The first intense excitation appears about 0.32 eV above. Interestingly, this value coincides with an experimental value obtained by ellipsometry (4.80 eV) which is higher than the onset from optical absorption spectroscopy (4.35 eV). The latter discrepancy is attributed to the fact that the weak transitions that define the optical gap are not resolved by the ellipsometry measurement. The absorption edge shows a strong dependency on the light polarization, reflecting the character of the involved valence states. Temperature-dependent measurements show a redshift of the optical gap by about 120 meV by increasing the temperature from 5 to 300 K. Renormalization due to zero-point vibrations is extrapolated from the latter measurement to amount to 150 meV. By adding the excitonic binding energy of 0.2 eV obtained theoretically to the experimental optical absorption onset, we determine the fundamental band gap at room temperature to be 4.55 eV.
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Submitted 12 January, 2021;
originally announced January 2021.
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Effect of Cd2+ on the Growth and Thermal Properties of K2SO4 crystal
Authors:
S. Bin Anooz,
D. Klimm,
M. Schmidbauer,
R. Bertram,
M. Rossberg
Abstract:
Single crystals of pure and Cd2+ doped potassium sulfate were grown from aqueous solutions by the slow evaporation technique. From nutrient solutions with a CdSO4 concentration of 4wt.% crystals containing 0.014wt.% dopant concentration could be obtained. The X-ray diffraction patterns of powdered crystals confirmed their crystal structures for both cases. Thermal analysis of pure crystals shows…
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Single crystals of pure and Cd2+ doped potassium sulfate were grown from aqueous solutions by the slow evaporation technique. From nutrient solutions with a CdSO4 concentration of 4wt.% crystals containing 0.014wt.% dopant concentration could be obtained. The X-ray diffraction patterns of powdered crystals confirmed their crystal structures for both cases. Thermal analysis of pure crystals shows that the alpha-beta phase transformation peak around 580 deg C is superimposed with spurious effects, while for Cd2+ doped crystals this is not the case. The thermal hysteresis of the phase transition is 8 K for undoped K2SO4 and is reduced to 3.5 K for K2SO4:Cd2+. Compared to undoped crystals, the optical transmittance of Cd2+ doped crystals is higher.
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Submitted 19 August, 2009; v1 submitted 19 March, 2008;
originally announced March 2008.
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The solid state phase transformation of potassium sulfate
Authors:
S. Bin Anooz,
R. Bertram,
D. Klimm
Abstract:
Potassium sulfate single crystals that are grown from aqueous solutions lose upon the first heating up to 1% of mass that is assumed to be water. This mass loss occurs in the vicinity of the PT from orthorhombic to hexagonal K2SO4. Only in the first heating run of K2SO4 that has not yet released water, pretransitional thermal effects can be observed in the DTA curve. If K2SO4 crystals are grown…
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Potassium sulfate single crystals that are grown from aqueous solutions lose upon the first heating up to 1% of mass that is assumed to be water. This mass loss occurs in the vicinity of the PT from orthorhombic to hexagonal K2SO4. Only in the first heating run of K2SO4 that has not yet released water, pretransitional thermal effects can be observed in the DTA curve. If K2SO4 crystals are grown from solutions containing 4 wt.% Cd, Cu, or Fe, only Cu or Fe can be incorporated significantly with concentrations of several 0.1%. The phase transformation temperature measured for such solid solutions depends on the heating rate. For pure K2SO4, the phase transformation temperature is independent on heating rate 581.3 deg. C and the enthalpy of transformation is (5.8+/-0.2) kJ/mol.
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Submitted 14 January, 2008;
originally announced January 2008.
