Showing 1–50 of 82 results for author: Ang, L

An Empirical Comparison of Methods to Produce Business Statistics Using Non-Probability Data

Authors: Lyndon Ang, Robert Clark, Bronwyn Loong, Anders Holmberg

Abstract: There is a growing trend among statistical agencies to explore non-probability data sources for producing more timely and detailed statistics, while reducing costs and respondent burden. Coverage and measurement error are two issues that may be present in such data. The imperfections may be corrected using available information relating to the population of interest, such as a census or a referenc… ▽ More There is a growing trend among statistical agencies to explore non-probability data sources for producing more timely and detailed statistics, while reducing costs and respondent burden. Coverage and measurement error are two issues that may be present in such data. The imperfections may be corrected using available information relating to the population of interest, such as a census or a reference probability sample. In this paper, we compare a wide range of existing methods for producing population estimates using a non-probability dataset through a simulation study based on a realistic business population. The study was conducted to examine the performance of the methods under different missingness and data quality assumptions. The results confirm the ability of the methods examined to address selection bias. When no measurement error is present in the non-probability dataset, a screening dual-frame approach for the probability sample tends to yield lower sample size and mean squared error results. The presence of measurement error and/or nonignorable missingness increases mean squared errors for estimators that depend heavily on the non-probability data. In this case, the best approach tends to be to fall back to a model-assisted estimator based on the probability sample. △ Less

Submitted 23 May, 2024; originally announced May 2024.

Strongly correlated multi-electron bunches from interaction with quantum light

Authors: Suraj Kumar, Jeremy Lim, Nicholas Rivera, Wesley Wong, Yee Sin Ang, Lay Kee Ang, Liang Jie Wong

Abstract: Strongly correlated electron systems are a cornerstone of modern physics, being responsible for groundbreaking phenomena from superconducting magnets to quantum computing. In most cases, correlations in electrons arise exclusively due to Coulomb interactions. In this work, we reveal that free electrons interacting simultaneously with a light field can become highly correlated via mechanisms beyond… ▽ More Strongly correlated electron systems are a cornerstone of modern physics, being responsible for groundbreaking phenomena from superconducting magnets to quantum computing. In most cases, correlations in electrons arise exclusively due to Coulomb interactions. In this work, we reveal that free electrons interacting simultaneously with a light field can become highly correlated via mechanisms beyond Coulomb interactions. In the case of two electrons, the resulting Pearson correlation coefficient (PCC) for the joint probability distribution of the output electron energies is enhanced over 13 orders of magnitude compared to that of electrons interacting with the light field in succession (one after another). These highly correlated electrons are the result of momentum and energy exchange between the participating electrons via the external quantum light field. Our findings pave the way to the creation and control of highly correlated free electrons for applications including quantum information and ultra-fast imaging. △ Less

Submitted 13 May, 2024; v1 submitted 23 April, 2024; originally announced April 2024.

Comments: 3 figures for Main Text, 4 figures for Supplementary Materials, Supplementary is available at end of Main Text figures

Quantum Metric Nonlinear Spin-Orbit Torque Enhanced by Topological Bands

Authors: Xukun Feng, Weikang Wu, Hui Wang, Weibo Gao, Lay Kee Ang, Y. X. Zhao, Cong Xiao, Shengyuan A. Yang

Abstract: Effects manifesting quantum geometry have been a focus of physics research. Here, we reveal that quantum metric plays a crucial role in nonlinear electric spin response, leading to a quantum metric spin-orbit torque. We argue that enhanced quantum metric can occur at band (anti)crossings, so the nonlinear torque could be amplified in topological metals with nodal features close to Fermi level. By… ▽ More Effects manifesting quantum geometry have been a focus of physics research. Here, we reveal that quantum metric plays a crucial role in nonlinear electric spin response, leading to a quantum metric spin-orbit torque. We argue that enhanced quantum metric can occur at band (anti)crossings, so the nonlinear torque could be amplified in topological metals with nodal features close to Fermi level. By applying our theory to magnetic Kane-Mele model and monolayer CrSBr, which feature nodal lines and Weyl points, we demonstrate that the quantum metric torque dominates the response, and its magnitude is significantly enhanced by topological band structures, which even surpasses the previously reported linear torques and is sufficient to drive magnetic switching by itself. △ Less

Submitted 1 February, 2024; originally announced February 2024.

YOLO algorithm with hybrid attention feature pyramid network for solder joint defect detection

Authors: Li Ang, Siti Khatijah Nor Abdul Rahim, Raseeda Hamzah, Raihah Aminuddin, Gao Yousheng

Abstract: Traditional manual detection for solder joint defect is no longer applied during industrial production due to low efficiency, inconsistent evaluation, high cost and lack of real-time data. A new approach has been proposed to address the issues of low accuracy, high false detection rates and computational cost of solder joint defect detection in surface mount technology of industrial scenarios. The… ▽ More Traditional manual detection for solder joint defect is no longer applied during industrial production due to low efficiency, inconsistent evaluation, high cost and lack of real-time data. A new approach has been proposed to address the issues of low accuracy, high false detection rates and computational cost of solder joint defect detection in surface mount technology of industrial scenarios. The proposed solution is a hybrid attention mechanism designed specifically for the solder joint defect detection algorithm to improve quality control in the manufacturing process by increasing the accuracy while reducing the computational cost. The hybrid attention mechanism comprises a proposed enhanced multi-head self-attention and coordinate attention mechanisms increase the ability of attention networks to perceive contextual information and enhances the utilization range of network features. The coordinate attention mechanism enhances the connection between different channels and reduces location information loss. The hybrid attention mechanism enhances the capability of the network to perceive long-distance position information and learn local features. The improved algorithm model has good detection ability for solder joint defect detection, with mAP reaching 91.5%, 4.3% higher than the You Only Look Once version 5 algorithm and better than other comparative algorithms. Compared to other versions, mean Average Precision, Precision, Recall, and Frame per Seconds indicators have also improved. The improvement of detection accuracy can be achieved while meeting real-time detection requirements. △ Less

Submitted 2 January, 2024; originally announced January 2024.

Intelligent Scoliosis Screening and Diagnosis: A Survey

Authors: Zhang Zhenlin, Pu Lixin, Li Ang, Zhang Jun, Li Xianjie, Fan Jipeng

Abstract: Scoliosis is a three-dimensional spinal deformity, which may lead to abnormal morphologies, such as thoracic deformity, and pelvic tilt. Severe patients may suffer from nerve damage and urinary abnormalities. At present, the number of scoliosis patients in primary and secondary schools has exceeded five million in China, the incidence rate is about 3% to 5% which is growing every year. The researc… ▽ More Scoliosis is a three-dimensional spinal deformity, which may lead to abnormal morphologies, such as thoracic deformity, and pelvic tilt. Severe patients may suffer from nerve damage and urinary abnormalities. At present, the number of scoliosis patients in primary and secondary schools has exceeded five million in China, the incidence rate is about 3% to 5% which is growing every year. The research on scoliosis, therefore, has important clinical value. This paper systematically introduces computer-assisted scoliosis screening and diagnosis as well as analyzes the advantages and limitations of different algorithm models in the current issue field. Moreover, the paper also discusses the current development bottlenecks in this field and looks forward to future development trends. △ Less

Submitted 12 October, 2023; originally announced October 2023.

Comments: in Chinese language

Revised Fowler-Dubridge model for photoelectron emission from two-dimensional materials

Authors: Luo Yi, Ang Y. S., Ang L. K

Abstract: We revise the Fowler-Dubridge (FB) model for photoelectron emission from two-dimensional (2D) materials to include the effects of reduced dimensionality, non-parabolic and anisotropic energy dispersion of 2D materials. Two different directions of electron emission are studied, namely vertical emission from the surface and lateral emission from the edge. Our analytical model reveals a universal tem… ▽ More We revise the Fowler-Dubridge (FB) model for photoelectron emission from two-dimensional (2D) materials to include the effects of reduced dimensionality, non-parabolic and anisotropic energy dispersion of 2D materials. Two different directions of electron emission are studied, namely vertical emission from the surface and lateral emission from the edge. Our analytical model reveals a universal temperature scaling of T\b{eta} with \b{eta} = 1 and \b{eta} = 3/2, respectively, for the surface and edge emission over a wide class of 2D materials, which are distinct from the traditional scaling of \b{eta} = 2 originally derived for the traditional bulk materials. Our comparison shows good agreement to two experiments of photo-electron emitted from graphene for both surface and edge emission. Our calculations also show the photoelectron emission is more pronounced than the coexisting thermionic emission for materials with low temperature and Fermi energy. This model provides helpful guidance in choosing proper combinations of light intensity, temperature range and type of 2D materials for the design of photoemitters, photodetectors and other optoelectronics △ Less

Submitted 11 September, 2023; originally announced September 2023.

Comments: 6 pages, 4 figures

Over-Barrier Photoelectron Emission with Rashba Spin-Orbit Coupling

Authors: Bi Hong Tiang, Yee Sin Ang, L. K. Ang

Abstract: We develop a theoretical model to calculate the quantum efficiency (QE) of photoelectron emission from materials with Rashba spin-orbit coupling (RSOC) effect. In the low temperature limit, an analytical scaling between QE and the RSOC strength is obtained as QE $\propto (\hbarω-W)^2+2E_R(\hbar ω-W) -E_R^2/3$, where $\hbarω$, $W$ and $E_R$ are the incident photon energy, work function and the RSOC… ▽ More We develop a theoretical model to calculate the quantum efficiency (QE) of photoelectron emission from materials with Rashba spin-orbit coupling (RSOC) effect. In the low temperature limit, an analytical scaling between QE and the RSOC strength is obtained as QE $\propto (\hbarω-W)^2+2E_R(\hbar ω-W) -E_R^2/3$, where $\hbarω$, $W$ and $E_R$ are the incident photon energy, work function and the RSOC parameter respectively. Intriguingly, the RSOC effect substantially improves the QE for strong RSOC materials. For example, the QE of Bi$_2$Se$_3$ and Bi/Si(111) increases, by 149\% and 122\%, respectively due to the presence of strong RSOC. By fitting to the photoelectron emission characteristics, the analytical scaling law can be employed to extract the RSOC strength, thus offering a useful tool to characterize the RSOC effect in materials. Importantly, when the traditional Fowler-Dubridge model is used, the extracted results may substantially deviate from the actual values by $\sim90\%$, thus highlighting the importance of employing our model to analyse the photoelectron emission especially for materials with strong RSOC. These findings provide a theoretical foundation for the design of photoemitters using Rashba spintronic materials. △ Less

Submitted 2 August, 2023; originally announced August 2023.

Comments: 6 pages, 3 figures

Analytical model of space charge current for a cylindrical porous trap-limited dielectric

Authors: Samra Kanwal, Chun Yun Kee, L. K. Ang

Abstract: In this study, analytical models for space charge limited current (SCLC) transport in a porous (or disordered) trap-limited dielectric are derived for both planar and cylindrical configuration. By considering the porous solid as a fractional object characterized by a parameter a less than 1, we formulate its fractional capacitance and determine the SCLC transport by using the transit time approach… ▽ More In this study, analytical models for space charge limited current (SCLC) transport in a porous (or disordered) trap-limited dielectric are derived for both planar and cylindrical configuration. By considering the porous solid as a fractional object characterized by a parameter a less than 1, we formulate its fractional capacitance and determine the SCLC transport by using the transit time approach. At a equal to 1, it will recover the well-known Mott Gurney (MG) law and Mark Helfrich (MH) law for trap-free and trap-limited cases, respectively. For cylindrical geometry, our findings show an analytical form that is not available from the traditional methods. We anticipate the proposed analytical model will serve as a useful tool for characterizing the current-voltage measurements in SCLC transport in dielectric breakdown and organic electronics, where spatial porosity of the materials is inevitable. The introduced fractional parameter a extracted from such characterization can facilitate the quantitative determination of the relationship between spatial porosity and charge mobility. △ Less

Submitted 30 July, 2023; originally announced July 2023.

Designer Edge States in Fractional Polarization Insulators

Authors: Wei Jie Chan, Peihao Fu, L. K. Ang, Yee Sin Ang

Abstract: We theoretically investigated the topological-protected edge states (TESs) in an anisotropic honeycomb lattice with mirror and chiral symmetries, characterized by an alternative topological invariant - fractional polarization (FP), rather than the conventional Chern number. This system termed an FP insulator is a potential platform for edge-state engineering due to its disconnected TESs. These dis… ▽ More We theoretically investigated the topological-protected edge states (TESs) in an anisotropic honeycomb lattice with mirror and chiral symmetries, characterized by an alternative topological invariant - fractional polarization (FP), rather than the conventional Chern number. This system termed an FP insulator is a potential platform for edge-state engineering due to its disconnected TESs. These disconnected and robust TESs are susceptible to perturbative chiral symmetry-breaking terms which can generate various patterns including the vanishing helical, spin-polarized, and chiral TESs. Moreover, helical and chiral TES can be achieved by the finite size effect, not possible from the aforementioned terms alone. The demonstration of these various TES in an FP-insulator offers an alternative route in designing reconfigurable two-dimensional nanoelectronic devices. △ Less

Submitted 13 June, 2023; originally announced June 2023.

Comments: 9 pages, 4 figures

Universal Model of Optical-Field Electron Tunneling from Two-Dimensional Materials

Authors: Yi Luo, Yee Sin Ang, L. K. Ang

Abstract: We develop analytical models of optical-field electron tunneling from the edge and surface of two-dimensional (2D) materials, including the effects of reduced dimensionality, non-parabolic energy dispersion, band anisotropy, quasi-time dependent tunneling and emission dynamics indueced by the laser field. We discover a universal scaling between the tunneling current density $J$ and the laser elect… ▽ More We develop analytical models of optical-field electron tunneling from the edge and surface of two-dimensional (2D) materials, including the effects of reduced dimensionality, non-parabolic energy dispersion, band anisotropy, quasi-time dependent tunneling and emission dynamics indueced by the laser field. We discover a universal scaling between the tunneling current density $J$ and the laser electric field $F$: In($J/|F|^β)\propto1/|F|$ with $β= 3 / 2$ in the edge emission and $β= 1$ in the vertical surface emission, which both are distinctive from the traditional Fowler-Nordheim (FN) model of $β= 2$. The current density exhibits an unexpected high-field saturation effect due to the reduced dimensionality of 2D materials, which is completely different from the space-charge saturation commonly observed in traditional bulk materials. Our results reveal the dc bias as an efficient method in modulating the optical-field tunneling sub-optical-cycle emission characteristics. Importantly, our model is in excellent agreement with a recent experiment on graphene. Our findings offer a theoretical foundation for the understanding of optical-field tunneling emission from the 2D material system, which is useful for the development of 2D-material based optoelectronics and vacuum nanoelectronics. △ Less

Submitted 20 March, 2023; originally announced March 2023.

Comments: 8 pages, 2 figures, 2 tables

Quantum Shot Noise Signatures of Two-Dimensional Semi-Dirac System

Authors: Wei Jie Chan, L. K. Ang, Yee Sin Ang

Abstract: Two-dimensional ($2$D) semi-Dirac systems, such as $2$D black phosphorus and arsenene, can exhibit a rich topological phase transition between insulating, semi-Dirac, and band inversion phases when subjected to an external modulation. How these phase transitions manifest within the quantum transport and shot noise signatures remain an open question thus far. Here, we show that the Fano factor conv… ▽ More Two-dimensional ($2$D) semi-Dirac systems, such as $2$D black phosphorus and arsenene, can exhibit a rich topological phase transition between insulating, semi-Dirac, and band inversion phases when subjected to an external modulation. How these phase transitions manifest within the quantum transport and shot noise signatures remain an open question thus far. Here, we show that the Fano factor converges to the universal $F\approx0.179$ at the semi-Dirac phase, and transits between the sub-Poissonian ($F\approx1/3$) and the Poissonian shot noise ($F\approx1$) limit at the band inversion and the insulating phase, respectively. Furthermore, the conductance of $2$D semi-Dirac system converges to the contrasting limit of $G/G_0 \rightarrow 1/d$ and $G/G_0 \rightarrow0$ at the band inversion and the insulating phases, respectively. The quantum tunneling spectra exhibits a peculiar coexistence of massless and massive Dirac quasiparticles in the band inversion regime, thus providing a versatile sandbox to study the tunneling behavior of various Dirac quasiparticles. These findings reveal the rich interplay between band topology and quantum transport signatures, which may serve as smoking gun signatures for the experimental studies of semi-Dirac systems near topological phase transition. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: Submitted to APL special issue, review in progress

Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector

Authors: Zhiyi Zhang, Bin Cheng, Jeremy Lim, Anyuan Gao, Lingyuan Lyu, Tianju Cao, Shuang Wang, Zhu-An Li, Qingyun Wu, L. K. Ang, Yee Sin Ang, Shi-Jun Liang, Feng Miao

Abstract: Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8… ▽ More Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8 V by raising the operating temperature, approaching the theoretical limit of 1.5E_g/e with E_g the band gap of semiconductor. We develop a two-dimensional impact ionization model and uncover that observation of high gain at low breakdown voltage arises from reduced dimensionality of electron-phonon (e-ph) scattering in the layered InSe flake. Our findings open up a promising avenue for develo** novel weak-light detectors with low energy consumption and high sensitivity. △ Less

Submitted 11 November, 2022; originally announced November 2022.

Lanthanum Oxyhalide Monolayers: An Exceptional Dielectric Companion to Two-Dimensional Semiconductors

Authors: Zhuoling Jiang, Tong Su, Cherq Chua, L. K. Ang, Chun Zhang, Liemao Cao, Yee Sin Ang

Abstract: Two-dimensional (2D) layered dielectrics offers a compelling route towards the design of next-generation ultimately compact nanoelectronics. Motivated by recent high-throughput computational prediction of LaO$X$ ($X$ = Br, Cl) as an exceptional 2D dielectrics that significantly outperforms HfO$_2$ even in the monolyaer limit, we investigate the interface properties between LaOX and the archetypal… ▽ More Two-dimensional (2D) layered dielectrics offers a compelling route towards the design of next-generation ultimately compact nanoelectronics. Motivated by recent high-throughput computational prediction of LaO$X$ ($X$ = Br, Cl) as an exceptional 2D dielectrics that significantly outperforms HfO$_2$ even in the monolyaer limit, we investigate the interface properties between LaOX and the archetypal 2D semiconductors of monolayer transition metal dichacolgenides (TMDCs) $M$S$_2$ ($M$ = Mo, W) using first-principle density functional theory simulations. We show that LaO$X$ monolayers interacts weakly with $M$S$_2$ via van der Waals forces with negligible hybridization and interfacial charge transfer, thus conveniently preserving the electronic properties of 2D TMDCs upon contact formation. The conduction and valance band offsets of the interfaces exhibit a sizable value ranging from 0.7 to 1.4 eV, suggesting the capability of LaO$X$ as a gate dielectric materials. Based on Murphy-Good electron emission model, we demonstrate that LaOCl/MoS$_2$ is a versatile dielectric/semiconductor combinations that are compatible to both NMOS and PMOS applications with leakage current lower than $10^{-7}$ Acm$^{-2}$, while LaO$X$/WS$_2$ is generally compatible with PMOS application. The presence of an interfacial tunneling potential barrier at the van der Waals gap further provide an additional mechanism to suppress the leakage current. Our findings reveal the role LaO$X$ as an excellent dielectric companion to 2D TMDC and shall provide useful insights for leveraging the dielectric strength of LaO$X$ in the design of high-performance 2D nanodevices. △ Less

Submitted 2 November, 2022; v1 submitted 31 October, 2022; originally announced October 2022.

Comments: 10 pages, 4 Figures, 3 Tables

Cataloguing MoSi$_2$N$_4$ and WSi$_2$N$_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications

Authors: Che Chen Tho, Chenjiang Yu, Qin Tang, Qianqian Wang, Tong Su, Zhuoer Feng, Qingyun Wu, C. V. Nguyen, Wee-Liat Ong, Shi-Jun Liang, San-Dong Guo, Liemao Cao, Shengli Zhang, Shengyuan A. Yang, Lay Kee Ang, Guangzhao Wang, Yee Sin Ang

Abstract: Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain… ▽ More Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain an open theoretical and experimental quest. Here we show that the vdWH family composed of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers provides a compelling material platform for develo** high-performance ultrathin excitonic solar cells and photonics devices. Using first-principle calculations, we construct and classify 51 types of MoSi$_2$N$_4$ and WSi$_2$N$_4$-based [(Mo,W)Si$_2$N$_4$] vdWHs composed of various metallic, semimetallic, semiconducting, insulating and topological 2D materials. Intriguingly, MoSi$_2$N$_4$/(InSe, WSe$_2$) are identified as Type-II vdWHs with exceptional excitonic solar cell power conversion efficiency reaching well over 20%, which are competitive to state-of-art silicon solar cells. The (Mo,W)Si$_2$N$_4$ vdWH family exhibits strong optical absorption in both the visible and ultraviolet regimes. Exceedingly large peak ultraviolet absorptions over 40%, approaching the maximum absorption limit of a free-standing 2D material, can be achieved in (Mo,W)Si$_2$N$_4$/$α_2$-(Mo,W)Ge$_2$P$_4$ vdWHs. Our findings unravel the enormous potential of (Mo,W)Si$_2$N$_4$ vdWHs in designing ultimately compact excitonic solar cell device technology. △ Less

Submitted 4 July, 2022; v1 submitted 23 June, 2022; originally announced June 2022.

Comments: 30 pages, 7 figures

Spatial-Temporal Adaptive Graph Convolution with Attention Network for Traffic Forecasting

Authors: Chen Weikang, Li Yawen, Xue Zhe, Li Ang, Wu Guobin

Abstract: Traffic forecasting is one canonical example of spatial-temporal learning task in Intelligent Traffic System. Existing approaches capture spatial dependency with a pre-determined matrix in graph convolution neural operators. However, the explicit graph structure losses some hidden representations of relationships among nodes. Furthermore, traditional graph convolution neural operators cannot aggre… ▽ More Traffic forecasting is one canonical example of spatial-temporal learning task in Intelligent Traffic System. Existing approaches capture spatial dependency with a pre-determined matrix in graph convolution neural operators. However, the explicit graph structure losses some hidden representations of relationships among nodes. Furthermore, traditional graph convolution neural operators cannot aggregate long-range nodes on the graph. To overcome these limits, we propose a novel network, Spatial-Temporal Adaptive graph convolution with Attention Network (STAAN) for traffic forecasting. Firstly, we adopt an adaptive dependency matrix instead of using a pre-defined matrix during GCN processing to infer the inter-dependencies among nodes. Secondly, we integrate PW-attention based on graph attention network which is designed for global dependency, and GCN as spatial block. What's more, a stacked dilated 1D convolution, with efficiency in long-term prediction, is adopted in our temporal block for capturing the different time series. We evaluate our STAAN on two real-world datasets, and experiments validate that our model outperforms state-of-the-art baselines. △ Less

Submitted 7 June, 2022; originally announced June 2022.

Stack operation of tensor networks

Authors: Tianning Zhang, Tianqi Chen, Er** Li, Bo Yang, L. K. Ang

Abstract: The tensor network, as a facterization of tensors, aims at performing the operations that are common for normal tensors, such as addition, contraction and stacking. However, due to its non-unique network structure, only the tensor network contraction is so far well defined. In this paper, we propose a mathematically rigorous definition for the tensor network stack approach, that compress a large a… ▽ More The tensor network, as a facterization of tensors, aims at performing the operations that are common for normal tensors, such as addition, contraction and stacking. However, due to its non-unique network structure, only the tensor network contraction is so far well defined. In this paper, we propose a mathematically rigorous definition for the tensor network stack approach, that compress a large amount of tensor networks into a single one without changing their structures and configurations. We illustrate the main ideas with the matrix product states based machine learning as an example. Our results are compared with the for loop and the efficient coding method on both CPU and GPU. △ Less

Submitted 24 May, 2022; v1 submitted 28 March, 2022; originally announced March 2022.

Comments: 9 pages, 10 figures, close to the online published version, for the code on Github, see this https://github.com/veya2ztn/Stack_of_Tensor_Network

Journal ref: Front. Phys. 10:906399 (2022)

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties

Authors: Liemao Cao, Xiaohui Deng, Guanghui Zhou, Shi-Jun Liang, Chuong V. Nguyen, L. K. Ang, Yee Sin Ang

Abstract: Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulat… ▽ More Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc$_2$CO$_2$. Intriguingly, the half-metallic phase exhibits a Type-III broken gap band alignment, which can be beneficial for tunnelling field-effect transistor application. We perform a quantum transport simulation, based on a \emph{proof-of-concept} two-terminal nanodevice, to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravels the potential of FeCl$_2$/Sc$_2$CO$_2$ vdW heterostructures as a building block for designing a next generation of ultimately compact information processing, data storage and spintronics devices. △ Less

Submitted 29 March, 2022; originally announced March 2022.

Comments: 9 pages, 5 figures, accepted for publication in Physical Review B (2022)

Modeling of electric double layer at solid-liquid interface with spatial complexity

Authors: Cherq Chua, Chun Yun Kee, L. K. Ang, Yee Sin Ang

Abstract: Electrical double layer (EDL) is formed when an electrode is in contact with an electrolyte solution, and is widely used in biophysics, electrochemistry, polymer solution and energy storage. Poisson-Boltzmann (PB) coupled equations provides the foundational framework for modeling electrical potential and charge distribution at EDL. In this work, based on fractional calculus, we reformulate the PB… ▽ More Electrical double layer (EDL) is formed when an electrode is in contact with an electrolyte solution, and is widely used in biophysics, electrochemistry, polymer solution and energy storage. Poisson-Boltzmann (PB) coupled equations provides the foundational framework for modeling electrical potential and charge distribution at EDL. In this work, based on fractional calculus, we reformulate the PB equations (with and without steric effects) by introducing a phenomenal parameter $D$ (with a value between 0 and 1) to account for the spatial complexity due to impurities in EDL. The electrical potential and ion charge distribution for different $D$ are investigated. At $D$ = 1, the model recover the classical findings of ideal EDL. The electrical potential decays slowly at $D <$1, thus suggesting a wider region of saturated layer under fixed surface potential in the presence of spatial complexity. The fractional-space generalized model developed here provides a useful tool to account for spatial complexity effects which are not captured in the classic full-dimensional models. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Comments: 7 pages 5 figures

SUTD-PRCM Dataset and Neural Architecture Search Approach for Complex Metasurface Design

Authors: Tianning Zhang, Yee Sin Ang, Er** Li, Chun Yun Kee, L. K. Ang

Abstract: Metasurfaces have received a lot of attentions recently due to their versatile capability in manipulating electromagnetic wave. Advanced designs to satisfy multiple objectives with non-linear constraints have motivated researchers in using machine learning (ML) techniques like deep learning (DL) for accelerated design of metasurfaces. For metasurfaces, it is difficult to make quantitative comparis… ▽ More Metasurfaces have received a lot of attentions recently due to their versatile capability in manipulating electromagnetic wave. Advanced designs to satisfy multiple objectives with non-linear constraints have motivated researchers in using machine learning (ML) techniques like deep learning (DL) for accelerated design of metasurfaces. For metasurfaces, it is difficult to make quantitative comparisons between different ML models without having a common and yet complex dataset used in many disciplines like image classification. Many studies were directed to a relatively constrained datasets that are limited to specified patterns or shapes in metasurfaces. In this paper, we present our SUTD polarized reflection of complex metasurfaces (SUTD-PRCM) dataset, which contains approximately 260,000 samples of complex metasurfaces created from electromagnetic simulation, and it has been used to benchmark our DL models. The metasurface patterns are divided into different classes to facilitate different degree of complexity, which involves identifying and exploiting the relationship between the patterns and the electromagnetic responses that can be compared in using different DL models. With the release of this SUTD-PRCM dataset, we hope that it will be useful for benchmarking existing or future DL models developed in the ML community. We also propose a classification problem that is less encountered and apply neural architecture search to have a preliminary understanding of potential modification to the neural architecture that will improve the prediction by DL models. Our finding shows that convolution stacking is not the dominant element of the neural architecture anymore, which implies that low-level features are preferred over the traditional deep hierarchical high-level features thus explains why deep convolutional neural network based models are not performing well in our dataset. △ Less

Submitted 24 February, 2022; originally announced March 2022.

Comments: 20 pages, 7 figures, 2 tables

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures

Authors: ** Quan Ng, Qingyun Wu, L. K. Ang, Yee Sin Ang

Abstract: Van de Waals heterostructures (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by the recent discovery of MoSi$_2$N$_4$ - a synthetic septuple-layered 2D semiconductor with exceptional mechanical and electronic properties, we investigate the synergy of \ce{MoSi2N4} with wide band gap (WBG) 2D monolayers of GaN and ZnO using fi… ▽ More Van de Waals heterostructures (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by the recent discovery of MoSi$_2$N$_4$ - a synthetic septuple-layered 2D semiconductor with exceptional mechanical and electronic properties, we investigate the synergy of \ce{MoSi2N4} with wide band gap (WBG) 2D monolayers of GaN and ZnO using first-principle calculations. We find that MoSi$_2$N$_4$/GaN is a direct band gap Type-I VDWH while MoSi$_2$N$_4$/ZnO is an indirect band gap Type-II VDWH. Intriguingly, by applying an electric field or mechanical strain along the out-of-plane direction, the band structures of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO can be substantially modified, exhibiting rich transitional behaviors, such as the Type-I-to-Type-II band alignment and the direct-to-indirect band gap transitions. These findings reveal the potentials of MoSi$_2$N$_4$-based WBG VDWH as a tunable hybrid materials with enormous design flexibility in ultracompact optoelectronic applications. △ Less

Submitted 24 February, 2022; v1 submitted 29 December, 2021; originally announced December 2021.

Comments: 8 pages, 4 figures

Quantum interference between fundamentally different processes is enabled by shaped input wavefunctions

Authors: J. Lim, Y. S. Ang, L. K. Ang, L. J. Wong

Abstract: We present a general framework for quantum interference (QI) between multiple, fundamentally different processes. Our framework reveals the importance of shaped input wavefunctions in enabling QI, and predicts unprecedented interactions between free electrons, bound electrons, and photons: (i) the vanishing of the zero-loss peak by destructive QI when a shaped electron wavepacket couples to light,… ▽ More We present a general framework for quantum interference (QI) between multiple, fundamentally different processes. Our framework reveals the importance of shaped input wavefunctions in enabling QI, and predicts unprecedented interactions between free electrons, bound electrons, and photons: (i) the vanishing of the zero-loss peak by destructive QI when a shaped electron wavepacket couples to light, under conditions where the electron's zero-loss peak otherwise dominates; (ii) QI between free electron and atomic (bound electron) spontaneous emission processes, which can be significant even when the free electron and atom are far apart, breaking the common notion that electron and atom must be close by to significantly affect each other's processes. Our work shows that emerging quantum wavesha** techniques unlock the door to greater versatility in light-matter interactions and other quantum processes in general. △ Less

Submitted 10 August, 2022; v1 submitted 26 November, 2021; originally announced November 2021.

Comments: 11 pages, 3 figures

Deep learning-based design of broadband GHz complex and random metasurfaces

Authors: Tianning Zhang, Chun Yun Kee, Yee Sin Ang, L. K. Ang

Abstract: We are interested to explore the limit in using deep learning (DL) to study the electromagnetic response for complex and random metasurfaces, without any specific applications in mind. For simplicity, we focus on a simple pure reflection problem of a broadband electromagnetic (EM) plane wave incident normally on such complex metasurfaces in the frequency regime of 2 to 12 GHz. In doing so, we crea… ▽ More We are interested to explore the limit in using deep learning (DL) to study the electromagnetic response for complex and random metasurfaces, without any specific applications in mind. For simplicity, we focus on a simple pure reflection problem of a broadband electromagnetic (EM) plane wave incident normally on such complex metasurfaces in the frequency regime of 2 to 12 GHz. In doing so, we create a deep learning (DL) based framework called metasurface design deep convolutional neural network (MSDCNN) for both the forward and inverse design of three different classes of complex metasurfaces: (a) Arbitrary connecting polygons, (b) Basic pattern combination, and (c) Fully random binary patterns. The performance of each metasurface is evaluated and cross-benchmarked. Dependent on the type of complex metasurfaces, sample size, and DL algorithms used, MSDCNN is able to provide good agreements and can be a faster design tool for complex metasurfaces as compared to the traditional full-wave electromagnetic simulation methods. However, no single universal deep convolutional neural network (DCNN) model can work well for all metasurface classes based on detailed statistical analysis (such as mean, variance, kurtosis, mean squared error). Our findings report important information on the advantages and limitation of current DL models in designing these ultimately complex metasurfaces. △ Less

Submitted 16 September, 2021; originally announced October 2021.

Comments: 32 pages, 14 figures, 1 table. Accepted in APL Photonics (2021)

Propagation-induced limits to high harmonic generation in 3D Dirac semimetals

Authors: Jeremy Lim, Yee Sin Ang, Lay Kee Ang, Liang Jie Wong

Abstract: 3D Dirac semimetals (DSMs) are promising materials for terahertz high harmonic generation (HHG). We show that 3D DSMs' high nonlinearity opens up a regime of nonlinear optics where extreme subwavelength current density features develop within nanoscale propagation distances of the driving field. Our results reveal orders-of-magnitude enhancement in HHG intensity with thicker 3D DSM films, and show… ▽ More 3D Dirac semimetals (DSMs) are promising materials for terahertz high harmonic generation (HHG). We show that 3D DSMs' high nonlinearity opens up a regime of nonlinear optics where extreme subwavelength current density features develop within nanoscale propagation distances of the driving field. Our results reveal orders-of-magnitude enhancement in HHG intensity with thicker 3D DSM films, and show that these subwavelength features fundamentally limit HHG enhancement beyond an optimal film thickness. This decrease in HHG intensity beyond the optimal thickness constitutes an effective propagation-induced dephasing. Our findings highlight the importance of propagation dynamics in nanofilms of extreme optical nonlinearity. △ Less

Submitted 17 June, 2021; originally announced June 2021.

Comments: 6 pages, 3 figures

Absence of Space-Charge-Limited Current in Unconventional Field Emission

Authors: Cherq Chua, Chun Yun Kee, Yee Sin Ang, L. K. Ang

Abstract: For field emission (FE), it is widely expected that its emitting current density $J$ will become space-charge-limited current (SCLC) due the built-up of charge in-transit within a gap spacing $D$ biased at sufficiently large voltage $V$. In this paper, we reveal a peculiar finding in which this expected two-stage transition (from FE to SCLC) is no longer valid for FE not obeying the traditional Fo… ▽ More For field emission (FE), it is widely expected that its emitting current density $J$ will become space-charge-limited current (SCLC) due the built-up of charge in-transit within a gap spacing $D$ biased at sufficiently large voltage $V$. In this paper, we reveal a peculiar finding in which this expected two-stage transition (from FE to SCLC) is no longer valid for FE not obeying the traditional Fowler-Nordheim (FN) law. %Such effect arises when the non-FN based emitters fails to inject sufficient %charge current at high voltage to sustain the SCLC. By employing a generalized FN scaling of $\ln\left(J/V^k\right) \propto - 1/V$, we show the existence of a \emph{critical exponent} $k_c \equiv 3/2$ where unusual behaviours occur for $k < k_c$: (a) Only FE at small $D$ (no transition to SCLC even at infinitely large $V$), and (b) Three-stage transition from FE first to SCLC then back to FE at large $D$. For any $k > k_c$, the conventional two-stage transition from FE to SCLC will always occur for all $D$, which also includes the conventional FN law at $k$ = 2. Using various unconventional FE models with $k \neq 2$, we specifically demonstrate these peculiar transitions. Under a normalized model, our findings uncover the rich interplay between the source-limited FE and bulk-limited SCLC over a wide range of operating conditions. △ Less

Submitted 21 May, 2021; originally announced May 2021.

Comments: 6 pages, 3 figures

Thermal-Field Electron Emission from Three-Dimensional Topological Semimetals

Authors: Wei Jie Chan, Yee Sin Ang, L. K. Ang

Abstract: A model is constructed to describe the thermal-field emission of electrons from a three-dimensional ($3$D) topological semimetal hosting Dirac/Weyl node(s). The traditional thermal-field electron emission model is generalised to accommodate the $3$D non-parabolic energy band structures in the topological Dirac/Weyl semimetals, such as cadmium arsenide (\ch{Cd3As2}), sodium bismuthide (\ch{Na3Bi}),… ▽ More A model is constructed to describe the thermal-field emission of electrons from a three-dimensional ($3$D) topological semimetal hosting Dirac/Weyl node(s). The traditional thermal-field electron emission model is generalised to accommodate the $3$D non-parabolic energy band structures in the topological Dirac/Weyl semimetals, such as cadmium arsenide (\ch{Cd3As2}), sodium bismuthide (\ch{Na3Bi}), tantalum arsenide (\ch{TaAs}) and tantalum phosphide (\ch{TaP}). Due to the unique Dirac cone band structure, an unusual dual-peak feature is observed in the total energy distribution (TED) spectrum. This non-trivial dual-peak feature, absent from traditional materials, plays a critical role in manipulating the TED spectrum and the magnitude of the emission current. At zero temperature limit, a new scaling law for pure field emission is derived and it is different from the well-known Fowler-Nordheim (FN) law. This model expands the recent understandings of electron emission studied for the Dirac $2$D materials into the $3$D regime, and thus offers a theoretical foundation for the exploration in using topological semimetals as novel electrodes. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Comments: 10 pages, 4 figures

Thompson Sampling for Gaussian Entropic Risk Bandits

Authors: Ming Liang Ang, Eloise Y. Y. Lim, Joel Q. L. Chang

Abstract: The multi-armed bandit (MAB) problem is a ubiquitous decision-making problem that exemplifies exploration-exploitation tradeoff. Standard formulations exclude risk in decision making. Risknotably complicates the basic reward-maximising objectives, in part because there is no universally agreed definition of it. In this paper, we consider an entropic risk (ER) measure and explore the performance of… ▽ More The multi-armed bandit (MAB) problem is a ubiquitous decision-making problem that exemplifies exploration-exploitation tradeoff. Standard formulations exclude risk in decision making. Risknotably complicates the basic reward-maximising objectives, in part because there is no universally agreed definition of it. In this paper, we consider an entropic risk (ER) measure and explore the performance of a Thompson sampling-based algorithm ERTS under this risk measure by providing regret bounds for ERTS and corresponding instance dependent lower bounds. △ Less

Submitted 14 May, 2021; originally announced May 2021.

Comments: arXiv admin note: text overlap with arXiv:2011.08046

Designing a Concentrated High-Efficiency Thermionic Solar Cell Enabled by Graphene Collector

Authors: Xin Zhang, Xiaohang Chen, **chan Chen, Lay Kee Ang, Yee Sin Ang

Abstract: We propose a concentrated thermionic emission solar cell design, which demonstrates a high solar-to-electricity energy conversion efficiency larger than 10\% under 600 sun, by harnessing the exceptional electrical, thermal and radiative properties of the graphene as a collector electrode. By constructing an analytical model that explicitly takes into account the non-Richardson behavior of the ther… ▽ More We propose a concentrated thermionic emission solar cell design, which demonstrates a high solar-to-electricity energy conversion efficiency larger than 10\% under 600 sun, by harnessing the exceptional electrical, thermal and radiative properties of the graphene as a collector electrode. By constructing an analytical model that explicitly takes into account the non-Richardson behavior of the thermionic emission current from graphene, space charge effect in vacuum gap, and the various irreversible energy losses within the subcomponents, we perform a detailed characterization on the conversion efficiency limit and electrical power output characteristics of the proposed system. We systematically model and compare the energy conversion efficiency of various configurations of graphene-graphene and graphene-diamond and diamond-diamond thermionic emitter, and show that utilizing diamond films as an emitter and graphene as a collector offers the highest maximum efficiency, thus revealing the important role of graphene in achieving high-performance thermionic emission solar cell. A maximum efficiency of 12.8\% under 800 sun has been revealed, which is significantly higher than several existing solid-state solar cell designs, such as the solar-driven thermoelectric and thermophotovoltaic converters. Our work thus opens up new avenues to advance the efficiency limit of thermionic solar energy conversion and the development of next-generation novel-nanomaterial-based solar energy harvesting technology. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Comments: 12 pages, 7 figures, 1 table

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Authors: Chit Siong Lau, **g Yee Chee, Yee Sin Ang, Shi Wun Tong, Liemao Cao, Zi-En Ooi, Tong Wang, Lay Kee Ang, Yan Wang, Manish Chhowalla, Kuan Eng Johnson Goh

Abstract: Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer lengt… ▽ More Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapour deposition grown single-layer and bilayer WS$_2$ devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (\sim10 k$Ω$\si{\micro\metre} at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities ($\sim$190 cm$^2$V$^{-1}$s$^{-1}$) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS$_2$-indium interface. Our results reveal significant advances towards high-performance WS$_2$ devices using indium alloy contacts. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 5 Figures

Journal ref: ACS Nano 2020, 14, 10, 13700-13708

Semiconductor-to-metal transition in bilayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ with strain and electric field

Authors: Qingyun Wu, Liemao Cao, Yee Sin Ang, Lay Kee Ang

Abstract: With exceptional electrical and mechanical properties and at the same time air-stability, layered MoSi2N4 has recently draw great attention. However, band structure engineering via strain and electric field, which is vital for practical applications, has not yet been explored. In this work, we show that the biaxial strain and external electric field are effective ways for the band gap engineering… ▽ More With exceptional electrical and mechanical properties and at the same time air-stability, layered MoSi2N4 has recently draw great attention. However, band structure engineering via strain and electric field, which is vital for practical applications, has not yet been explored. In this work, we show that the biaxial strain and external electric field are effective ways for the band gap engineering of bilayer MoSi$_2$N$_4$ and WSi$_2$N$_4$. It is found that strain can lead to indirect band gap to direct band gap transition. On the other hand, electric field can result in semiconductor to metal transition. Our study provides insights into the band structure engineering of bilayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ and would pave the way for its future nanoelectronics and optoelectronics applications. △ Less

Submitted 16 January, 2021; originally announced January 2021.

Comments: 5 pages, 3 figures

Designing 24-hour Electrical Power Generator: Thermoradiative Device for Harvesting Energy from Sun and Outer Space

Authors: Xin Zhang, Guofeng Yang, Mengqi Yan, Lay Kee Ang, Yee Sin Ang

Abstract: Energy harvesting from sun and outer space using thermoradiative devices (TRD), despite being promising renewable energy sources, are limited only to daytime and nighttime period, respectively. A system with 24-hour continuous energy generation remains an open question thus far. Here, we propose a TRD-based power generator that harvests solar energy via concentrated solar irradiation during daytim… ▽ More Energy harvesting from sun and outer space using thermoradiative devices (TRD), despite being promising renewable energy sources, are limited only to daytime and nighttime period, respectively. A system with 24-hour continuous energy generation remains an open question thus far. Here, we propose a TRD-based power generator that harvests solar energy via concentrated solar irradiation during daytime and via thermal infrared emission towards the outer space at nighttime, thus achieving the much sought-after 24-hour electrical power generation. We develop a rigorous thermodynamical model to investigate the performance characteristics, parametric optimum design, and the role of various energy loss mechanisms. Our model predicts that the TRD-based system yields a peak efficiency of 12.6\% at daytime and a maximum power density of 10.8 Wm$^{-2}$ at nighttime, thus significantly outperforming the state-of-art record-setting thermoelectric generator. These findings reveal the potential of TRD towards 24-hour electricity generation and future renewable energy technology. △ Less

Submitted 14 January, 2021; originally announced January 2021.

Comments: 6 pages, 3 figures

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Authors: Qianqian Wang, Liemao Cao, Shi-Jun Liang, Weikang Wu, Guangzhao Wang, Ching Hua Lee, Wee Liat Ong, Hui Ying Yang, Lay Kee Ang, Shengyuan A. Yang, Yee Sin Ang

Abstract: Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N… ▽ More Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ - a recently synthesized 2D material class with exceptional mechanical and electronic properties - exhibit strongly suppressed FLP and wide-range tunable SBH when contacted by metals. An exceptionally large SBH slope parameter of S=0.7 is obtained, which outperform the vast majority of other 2D semiconductors. Such surprising behavior arises from the unique morphology of MoSi$_2$N$_4$ and WSi$_2$N$_4$. The outlying Si-N layer forms a native atomic layer that protects the semiconducting inner-core from the perturbance of metal contacts, thus suppressing the FLP. Our findings reveal the potential of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as a novel 2D material platform for designing high-performance and energy-efficient 2D nanodevices. △ Less

Submitted 23 December, 2020; v1 submitted 14 December, 2020; originally announced December 2020.

Comments: 28 pages, 5 figures

Refining Deep Generative Models via Discriminator Gradient Flow

Authors: Abdul Fatir Ansari, Ming Liang Ang, Harold Soh

Abstract: Deep generative modeling has seen impressive advances in recent years, to the point where it is now commonplace to see simulated samples (e.g., images) that closely resemble real-world data. However, generation quality is generally inconsistent for any given model and can vary dramatically between samples. We introduce Discriminator Gradient flow (DGflow), a new technique that improves generated s… ▽ More Deep generative modeling has seen impressive advances in recent years, to the point where it is now commonplace to see simulated samples (e.g., images) that closely resemble real-world data. However, generation quality is generally inconsistent for any given model and can vary dramatically between samples. We introduce Discriminator Gradient flow (DGflow), a new technique that improves generated samples via the gradient flow of entropy-regularized f-divergences between the real and the generated data distributions. The gradient flow takes the form of a non-linear Fokker-Plank equation, which can be easily simulated by sampling from the equivalent McKean-Vlasov process. By refining inferior samples, our technique avoids wasteful sample rejection used by previous methods (DRS & MH-GAN). Compared to existing works that focus on specific GAN variants, we show our refinement approach can be applied to GANs with vector-valued critics and even other deep generative models such as VAEs and Normalizing Flows. Empirical results on multiple synthetic, image, and text datasets demonstrate that DGflow leads to significant improvement in the quality of generated samples for a variety of generative models, outperforming the state-of-the-art Discriminator Optimal Transport (DOT) and Discriminator Driven Latent Sampling (DDLS) methods. △ Less

Submitted 5 June, 2021; v1 submitted 1 December, 2020; originally announced December 2020.

Comments: ICLR 2021 Camera Ready; Code available at https://github.com/clear-nus/DGflow; Updated Related Work

Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Authors: Liemao Cao, Guanghui Zhou, Qianqian Wang, L. K. Ang, Yee Sin Ang

Abstract: Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostr… ▽ More Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi$_2$N$_4$ contacted by graphene and NbS$_2$ monolayers using first-principle density functional theory calculations. We show that the MoSi$_2$N$_4$/NbS$_2$ contact exhibits an ultralow Schottky barrier height (SBH), which is beneficial for nanoelectronics applications. For MoSi$_2$N$_4$/graphene contact, the SBH can be modulated via interlayer distance or via external electric fields, thus opening up an opportunity for reconfigurable and tunable nanoelectronic devices. Our findings provide insights on the physics of 2D electrical contact to MoSi$_2$N$_4$, and shall offer a critical first step towards the design of high-performance electrical contacts to MoSi$_2$N$_4$-based 2D nanodevices. △ Less

Submitted 16 December, 2020; v1 submitted 12 October, 2020; originally announced October 2020.

Comments: 5 pages, 5 figures (accepted version, to appear in Applied Physics Letters)

Generalized scaling law for exciton binding energy in two-dimensional materials

Authors: S. Ahmad, M. Zubair, O. Jalil, M. Q. Mehmood, U. Younis, X. Liu, K. W. Ang, L. K. Ang

Abstract: Binding energy calculation in two-dimensional (2D) materials is crucial in determining their electronic and optical properties pertaining to enhanced Coulomb interactions between charge carriers due to quantum confinement and reduced dielectric screening. Based on full solutions of the Schrödinger equation in screened hydrogen model with a modified Coulomb potential ($1/r^{β-2}$), we present a gen… ▽ More Binding energy calculation in two-dimensional (2D) materials is crucial in determining their electronic and optical properties pertaining to enhanced Coulomb interactions between charge carriers due to quantum confinement and reduced dielectric screening. Based on full solutions of the Schrödinger equation in screened hydrogen model with a modified Coulomb potential ($1/r^{β-2}$), we present a generalized and analytical scaling law for exciton binding energy, $E_β = E_{0}\times \big (\,aβ^{b}+c\big )\, (μ/ε^{2})$, where $β$ is a fractional-dimension parameter accounted for the reduced dielectric screening. The model is able to provide accurate binding energies, benchmarked with the reported Bethe-Salpeter Equation (BSE) and experimental data, for 58 mono-layer 2D and 8 bulk materials respectively through $β$. For a given material, $β$ is varied from $β$ = 3 for bulk 3D materials to a value lying in the range 2.55$-$2.7 for 2D mono-layer materials. With $β_{\text{mean}}$ = 2.625, our model improves the average relative mean square error by 3 times in comparison to existing models. The results can be used for Coulomb engineering of exciton binding energies in the optimal design of 2D materials. △ Less

Submitted 23 May, 2020; originally announced May 2020.

Comments: Accepted (in-press) for publication in Physical Review Applied. Accepted article is available at this URL: https://journals.aps.org/prapplied/accepted/8607dYcbA3b1de6467a97ee13f63bee882eb2d391

Journal ref: Phys. Rev. Applied 13, 064062 (2020)

Broadband strong optical dichroism in topological Dirac semimetals with Fermi velocity anisotropy

Authors: J. Lim, K. J. A. Ooi, C. Zhang, L. K. Ang, Yee Sin Ang

Abstract: Prototypical three-dimensional (3D) topological Dirac semimetals (DSMs), such as Cd$_3$As$_2$ and Na$_3$Bi, contain electrons that obey a linear momentum-energy dispersion with different Fermi velocities along the three orthogonal momentum dimensions. Despite being extensively studied in recent years, the inherent \emph{Fermi velocity anisotropy} has often been neglected in the theoretical and num… ▽ More Prototypical three-dimensional (3D) topological Dirac semimetals (DSMs), such as Cd$_3$As$_2$ and Na$_3$Bi, contain electrons that obey a linear momentum-energy dispersion with different Fermi velocities along the three orthogonal momentum dimensions. Despite being extensively studied in recent years, the inherent \emph{Fermi velocity anisotropy} has often been neglected in the theoretical and numerical studies of 3D DSMs. Although this omission does not qualitatively alter the physics of light-driven massless quasiparticles in 3D DSMs, it does \emph{quantitatively} change the optical coefficients which can lead to nontrivial implications in terms of nanophotonics and plasmonics applications. Here we study the linear optical response of 3D DSMs for general Fermi velocity values along each direction. Although the signature conductivity-frequency scaling, $σ(ω) \propto ω$, of 3D Dirac fermion is well-protected from Fermi velocity anisotropy, the linear optical response exhibits strong linear dichroism as captured by the \emph{universal} extinction ratio scaling law, $Λ_{ij} = (v_i/v_j)^2$ (where $i\neq j$ denotes the three spatial coordinates $x,y,z$, and $v_i$ is the $i$-direction Fermi velocity), which is independent of frequency, temperature, do**, and carrier scattering lifetime. For Cd$_3$As$_2$ and Na$_3$Bi$_3$, an exceptionally strong extinction ratio larger than 15 and covering broad terahertz window is revealed. Our findings shed new light on the role of Fermi velocity anisotropy in the optical response of Dirac semimetals and open up novel polarization-sensitive functionalities, such as photodetection and light modulation. △ Less

Submitted 7 May, 2020; originally announced May 2020.

Comments: 8 pages, 3 figures

Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material

Authors: Liemao Cao, Guanghui Zhou, Qingyun Wu, Shengyuan A. Yang, Hui Ying Yang, Yee Sin Ang, L. K. Ang

Abstract: Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle… ▽ More Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle density functional theory and nonequilibrium Green's function simulation, we show that the electrical coupling between Na$_3$Bi bilayer thin film and graphene results in a notable interlayer charge transfer, thus inducing sizable $n$-type do** in the Na$_3$Bi/graphene heterostructures. In the case of MoS$_2$ and WS$_2$ monolayers, the lateral Schottky transport barrier is significantly lower than many commonly studied bulk metals, thus unraveling Na$_3$Bi bilayer as a high-efficiency electrical contact material for 2D semiconductors. These findings opens up an avenue of utilizing topological semimetal thin film as electrical contact to 2D materials, and further expands the family of 2D heterostructure devices into the realm of topological materials. △ Less

Submitted 13 May, 2020; v1 submitted 21 April, 2020; originally announced April 2020.

Comments: 8 pages, 6 figures. Authors' accepted version

Journal ref: Phys. Rev. Appl. 13, 054030 (2020)

Universal model for electron thermal-field emission from two-dimensional semimetals

Authors: L. K. Ang, Yee Sin Ang, Ching Hua Lee

Abstract: We present the theory of out-of-plane (or vertical) electron thermal-field emission from 2D semimetals. We show that the current-voltage-temperature characteristic is well-captured by a universal scaling relation applicable for broad classes of 2D semimetals, including graphene and its few-layer, nodal point semimetal, Dirac semimetal at the verge of topological phase transition and nodal line sem… ▽ More We present the theory of out-of-plane (or vertical) electron thermal-field emission from 2D semimetals. We show that the current-voltage-temperature characteristic is well-captured by a universal scaling relation applicable for broad classes of 2D semimetals, including graphene and its few-layer, nodal point semimetal, Dirac semimetal at the verge of topological phase transition and nodal line semimetal. Here an important consequence of the universal emission behavior is revealed: in contrast to the common expectation that band topology shall manifest differently in the physical observables, band topologies in two spatial dimension are indistinguishable from each others and bear no special signature in the electron emission characteristics. Our findings represent the quantum extension of the universal semiclassical thermionic emission scaling law in 2D materials, and provide the theoretical foundations for the understanding of electron emission from cathode and charge interface transport for the design of 2D-material-based vacuum nanoelectronics. △ Less

Submitted 17 April, 2023; v1 submitted 31 March, 2020; originally announced March 2020.

Comments: 9 pages, 2 figures, 2 tables

Journal ref: Phys. Plasma 30 (2003) 033103

Photonic convolutional neural networks using integrated diffractive optics

Authors: Jun Rong Ong, Chin Chun Ooi, Thomas Y. L. Ang, Soon Thor Lim, Ching Eng Png

Abstract: With recent rapid advances in photonic integrated circuits, it has been demonstrated that programmable photonic chips can be used to implement artificial neural networks. Convolutional neural networks (CNN) are a class of deep learning methods that have been highly successful in applications such as image classification and speech processing. We present an architecture to implement a photonic CNN… ▽ More With recent rapid advances in photonic integrated circuits, it has been demonstrated that programmable photonic chips can be used to implement artificial neural networks. Convolutional neural networks (CNN) are a class of deep learning methods that have been highly successful in applications such as image classification and speech processing. We present an architecture to implement a photonic CNN using the Fourier transform property of integrated star couplers. We show, in computer simulation, high accuracy image classification using the MNIST dataset. We also model component imperfections in photonic CNN and show that the performance degradation can be recovered in a programmable chip. Our proposed architecture provides a large reduction in physical footprint compared to current implementations as it utilizes the natural advantages of optics and hence offers a scalable pathway towards integrated photonic deep learning processors. △ Less

Submitted 17 February, 2020; originally announced March 2020.

Comments: 9 pages, 6 figures

Efficient generation of extreme terahertz harmonics in 3D Dirac semimetals

Authors: J. Lim, Y. S. Ang, F. J. G. de Abajó, I. Kaminer, L. K. Ang, L. J. Wong

Abstract: Frequency multiplication of terahertz signals on a solid state platform is highly sought-after for the next generation of high-speed electronics and the creation of frequency combs. Solutions to efficiently generate extreme harmonics (up to the $31^{\rm{st}}$ harmonic and beyond) of a terahertz signal with modest input intensities, however, remain elusive. Using fully nonperturbative simulations a… ▽ More Frequency multiplication of terahertz signals on a solid state platform is highly sought-after for the next generation of high-speed electronics and the creation of frequency combs. Solutions to efficiently generate extreme harmonics (up to the $31^{\rm{st}}$ harmonic and beyond) of a terahertz signal with modest input intensities, however, remain elusive. Using fully nonperturbative simulations and complementary analytical theory, we show that 3D Dirac semimetals (DSMs) have enormous potential as compact sources of extreme terahertz harmonics, achieving energy conversion efficiencies beyond $10^{-5}$ at the $31^{\rm{st}}$ harmonic with input intensities on the order of $10$ MW/cm$^2$, over $10^5$ times lower than in conventional THz high harmonic generation systems. Our theory also reveals a fundamental feature in the nonlinear optics of 3D DSMs: a distinctive regime where higher-order optical nonlinearity vanishes, arising as a direct result of the extra dimensionality in 3D DSMs compared to 2D DSMs. Our findings should pave the way to the development of efficient platforms for high-frequency terahertz light sources and optoelectronics based on 3D DSMs. △ Less

Submitted 25 March, 2020; originally announced March 2020.

Comments: 10 pages, 3 figures

Journal ref: Phys. Rev. Research 2, 043252 (2020)

Super-Andreev reflection and longitudinal shift of pseudospin-one fermions

Authors: Xiaolong Feng, Ying Liu, Zhi-Ming Yu, Zhongshui Ma, L. K. Ang, Yee Sin Ang, Shengyuan A. Yang

Abstract: Novel fermions with a pseudospin-1 structure can be realized as emergent quasiparticles in condensed matter systems. Here, we investigate its unusual properties during the Andreev reflection at a normal-metal/superconductor (NS) interface. We show that distinct from the previously studied pseudospin-1/2 and two dimensional electron gas models, the pseudospin-1 fermions exhibit a strongly enhanced… ▽ More Novel fermions with a pseudospin-1 structure can be realized as emergent quasiparticles in condensed matter systems. Here, we investigate its unusual properties during the Andreev reflection at a normal-metal/superconductor (NS) interface. We show that distinct from the previously studied pseudospin-1/2 and two dimensional electron gas models, the pseudospin-1 fermions exhibit a strongly enhanced Andreev reflection probability, and remarkably, can be further tuned to approach perfect Andreev reflection with unit efficiency for all incident angles, exhibiting a previously unknown {super-Andreev reflection effect}. The super-Andreev reflection leads to perfect transparency of the NS interface that strongly promotes charge injection into the superconductor, and directly manifests as a differential conductance peak which can be readily probed in experiment. Additionally, we find that sizable longitudinal shifts exist in the normal and Andreev reflections of pseudospin-1 fermions. Distinct from the pseudospin-1/2 case, the shift is always in the forward direction in the subgap regime, regardless of whether the reflection is of retro- or specular type. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 101, 235417 (2020)

Partial wave analysis of $ψ(3686)\rightarrow K^{+}K^{-}η$

Authors: BESIII Collaboration, M. Ablikim, M. N. Achasov, P. Adlarson, S. Ahmed, M. Albrecht, M. Alekseev, A. Amoroso, F. F. An, Q. An, Y. Bai, O. Bakina, R. Baldini Ferroli, I. Balossino, Y. Ban, K. Begzsuren, J. V. Bennett, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, J Biernat, J. Blom s, I. Boyko, R. A. Briere , et al. (461 additional authors not shown)

Abstract: Using a sample of $(448.1\pm2.9)\times10^6$ $ψ(3686)$ events collected with the BESIII detector, we perform the first partial wave analysis of $ψ(3686)\rightarrow K^+K^-η$. In addition to the well established states, $φ(1020)$, $φ(1680)$, and $K_3^*(1780)$, contributions from $X(1750)$, $ρ(2150)$, $ρ_3(2250)$, and $K^*_2(1980)$ are also observed. The $X(1750)$ state is determined to be a $1^{--}$… ▽ More Using a sample of $(448.1\pm2.9)\times10^6$ $ψ(3686)$ events collected with the BESIII detector, we perform the first partial wave analysis of $ψ(3686)\rightarrow K^+K^-η$. In addition to the well established states, $φ(1020)$, $φ(1680)$, and $K_3^*(1780)$, contributions from $X(1750)$, $ρ(2150)$, $ρ_3(2250)$, and $K^*_2(1980)$ are also observed. The $X(1750)$ state is determined to be a $1^{--}$ resonance. The simultaneous observation of the $φ(1680)$ and $X(1750)$ indicates that the $X(1750)$, with previous observations in photoproduction, is distinct from the $φ(1680)$. The masses, widths, branching fractions of $ψ(3686)\rightarrow K^+K^-η$ and the intermediate resonances are also measured. △ Less

Submitted 29 February, 2020; v1 submitted 18 December, 2019; originally announced December 2019.

Comments: 12 pages, 11 figures, 5 tables, published in PRD

Journal ref: Phys. Rev. D 101, 032008 (2020)

Generalized high-energy thermionic electron injection at graphene interface

Authors: Yee Sin Ang, Yueyi Chen, Chuan Tan, L. K. Ang

Abstract: Graphene thermionic electron emission across high-interface-barrier involves energetic electrons residing far away from the Dirac point where the Dirac cone approximation of the band structure breaks down. Here we construct a full-band model beyond the simple Dirac cone approximation for the thermionic injection of high-energy electrons in graphene. We show that the thermionic emission model based… ▽ More Graphene thermionic electron emission across high-interface-barrier involves energetic electrons residing far away from the Dirac point where the Dirac cone approximation of the band structure breaks down. Here we construct a full-band model beyond the simple Dirac cone approximation for the thermionic injection of high-energy electrons in graphene. We show that the thermionic emission model based on the Dirac cone approximation is valid only in the graphene/semiconductor Schottky interface operating near room temperature, but breaks down in the cases involving high-energy electrons, such as graphene/vacuum interface or heterojunction in the presence of photon absorption, where the full-band model is required to account for the band structure nonlinearity at high electron energy. We identify a critical barrier height, $Φ_B^{(\text{c})} \approx 3.5$ eV, beyond which the Dirac cone approximation crosses over from underestimation to overestimation. In the high-temperature thermionic emission regime at graphene/vacuum interface, the Dirac cone approximation severely overestimates the electrical and heat current densities by more than 50\% compared to the more accurate full-band model. The large discrepancies between the two models are demonstrated using a graphene-based thermionic cooler. These findings reveal the fallacy of Dirac cone approximation in the thermionic injection of high-energy electrons in graphene. The full-band model developed here can be readily generalized to other 2D materials, and shall provide an improved theoretical avenue for the accurate analysis, modeling and design of graphene-based thermionic energy devices. △ Less

Submitted 30 July, 2019; v1 submitted 17 July, 2019; originally announced July 2019.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Appl. 12, -14-57 (2019)

Imaging nodal knots in momentum space through topolectrical circuits

Authors: Ching Hua Lee, Amanda Sutrisno, Tobias Hofmann, Tobias Helbig, Yuhan Liu, Yee Sin Ang, Lay Kee Ang, Xiao Zhang, Martin Greiter, Ronny Thomale

Abstract: Knots are intricate structures that cannot be unambiguously distinguished with any single topological invariant. Momentum space knots, in particular, have been elusive due to their requisite finely tuned long-ranged hop**s. Even if constructed, probing their intricate linkages and topological "drumhead" surface states will be challenging due to the high precision needed. In this work, we overcom… ▽ More Knots are intricate structures that cannot be unambiguously distinguished with any single topological invariant. Momentum space knots, in particular, have been elusive due to their requisite finely tuned long-ranged hop**s. Even if constructed, probing their intricate linkages and topological "drumhead" surface states will be challenging due to the high precision needed. In this work, we overcome these practical and technical challenges with RLC circuits, transcending existing theoretical constructions which necessarily break reciprocity, by pairing nodal knots with their mirror image partners in a fully reciprocal setting. Our nodal knot circuits can be characterized with impedance measurements that resolve their drumhead states and image their 3D nodal structure. Doing so allows for reconstruction of the Seifert surface and hence knot topological invariants like the Alexander polynomial. We illustrate our approach with large-scale simulations of various nodal knots and an experiment that maps out the topological drumhead region of a Hopf-link. △ Less

Submitted 11 July, 2020; v1 submitted 23 April, 2019; originally announced April 2019.

Comments: 37 pages, 14 figures, 14 tables

Journal ref: Nature Communications, 11, 4385 (2020)

Surface exciton polaritons: a promising mechanism for sensing applications

Authors: Yi Xu, Lin Wu, L. K. Ang

Abstract: The possibility of constructing a surface exciton polariton (SEP) based sensor at room temperature is explored. The proposed SEP sensor is based on the Kretschmann-Raether configuration of conventional surface plasmon resonance (SPR) sensor, where the metal thin film was replaced by the J-aggregate cyanine dye film. The excitation of SEP results in a strong electric field at the interface of TDBC… ▽ More The possibility of constructing a surface exciton polariton (SEP) based sensor at room temperature is explored. The proposed SEP sensor is based on the Kretschmann-Raether configuration of conventional surface plasmon resonance (SPR) sensor, where the metal thin film was replaced by the J-aggregate cyanine dye film. The excitation of SEP results in a strong electric field at the interface of TDBC and analyte, and exponentially decaying into the analyte, which is sensitive to the refractive index variations of analyte. The sensitivity of 118.1818 $^\circ/\text{RIU}$ (140.4286 $^\circ/\text{RIU}$) was achieved for the proposed SEP sensor within the refractive index range 1.0-1.001 (1.33-1.36) of gaseous analyte (aqueous solutions), which is about 2 (3.5) times higher than that of conventional gold-based SPR sensor. The significant superiority of the SEP sensor in sensitivity revealing SEP as a new promising mechanism for sensing applications. △ Less

Submitted 17 December, 2018; originally announced December 2018.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. Applied 12, 024029 (2019)

Fractional Fresnel coefficients for optical absorption in femtosecond laser-induced rough metal surfaces

Authors: Muhammad Zubair, Yee Sin Ang, Kelvin J. A. Ooi, L. K. Ang

Abstract: The surface morphology of metal influences its optical absorptivity. Recent experiments have demonstrated that the femtosecond laser induced surface structures on metals could be dynamically controlled by the fluence of laser and the number of pulses. In this paper, we formulate an analytical model to calculate the optical absorption of a rough metallic surface by modeling the roughness as a fract… ▽ More The surface morphology of metal influences its optical absorptivity. Recent experiments have demonstrated that the femtosecond laser induced surface structures on metals could be dynamically controlled by the fluence of laser and the number of pulses. In this paper, we formulate an analytical model to calculate the optical absorption of a rough metallic surface by modeling the roughness as a fractal slab. For a given experimental image of the surface roughness, we characterize the roughness with a fractal parameter by using box-counting method. With this parameter as input, we calculate the absorption of 800 nm laser pulse im**ing on gold, copper and platinum, and the calculated results show excellent agreements. In terms of physics, our model can be viewed as a fractional version of the Fresnel coefficients, and it will be useful for designing suitable surface structures to tune the light absorption on metals from purely reflective to highly absorptive based on different applications. △ Less

Submitted 6 October, 2018; originally announced October 2018.

Comments: Journal of Applied Physics (accepted, in-press) 2018

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

Authors: Antonio Di Bartolomeo, Alessandro Grillo, Francesca Urban, Laura Iemmo, Filippo Giubileo, Giuseppe Luongo, Giampiero Amato, Luca Croin, Linfeng Sun, Shi-Jun Liang, Lay Kee Ang

Abstract: We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to… ▽ More We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to-back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottky-barrier limited injection at the grounded junction. The device achieves a photo responsivity greater than 2.5 AW-1 under 5 mWcm-2 white-LED light. By comparing two- and four-probe measurements, we demonstrate that the hysteresis and persistent photoconductivity exhibited by the transistor are peculiarities of the MoS2 channel rather than effects of the Ti/MoS2 interface. △ Less

Submitted 6 August, 2018; originally announced August 2018.

Comments: 22 pages, 5 figure

Journal ref: Advanced Functional Materials 2018, 28, 1800657

Deep Multi-Output Forecasting: Learning to Accurately Predict Blood Glucose Trajectories

Authors: Ian Fox, Lynn Ang, Mamta Jaiswal, Rodica Pop-Busui, Jenna Wiens

Abstract: In many forecasting applications, it is valuable to predict not only the value of a signal at a certain time point in the future, but also the values leading up to that point. This is especially true in clinical applications, where the future state of the patient can be less important than the patient's overall trajectory. This requires multi-step forecasting, a forecasting variant where one aims… ▽ More In many forecasting applications, it is valuable to predict not only the value of a signal at a certain time point in the future, but also the values leading up to that point. This is especially true in clinical applications, where the future state of the patient can be less important than the patient's overall trajectory. This requires multi-step forecasting, a forecasting variant where one aims to predict multiple values in the future simultaneously. Standard methods to accomplish this can propagate error from prediction to prediction, reducing quality over the long term. In light of these challenges, we propose multi-output deep architectures for multi-step forecasting in which we explicitly model the distribution of future values of the signal over a prediction horizon. We apply these techniques to the challenging and clinically relevant task of blood glucose forecasting. Through a series of experiments on a real-world dataset consisting of 550K blood glucose measurements, we demonstrate the effectiveness of our proposed approaches in capturing the underlying signal dynamics. Compared to existing shallow and deep methods, we find that our proposed approaches improve performance individually and capture complementary information, leading to a large improvement over the baseline when combined (4.87 vs. 5.31 absolute percentage error (APE)). Overall, the results suggest the efficacy of our proposed approach in predicting blood glucose level and multi-step forecasting more generally. △ Less

Submitted 14 June, 2018; originally announced June 2018.

Comments: KDD 2018

Journal ref: Proceedings of the 24th ACM SIGKDD International Conference on Knowledge Discovery & Data Mining, 2018

Thickness dependence of space-charge-limited current in spatially disordered organic semiconductors

Authors: Muhammad Zubair, Yee Sin Ang, Lay Kee Ang

Abstract: Charge transport properties in organic semiconductors are determined by two kinds of microscopic disorders, namely energetic disorder related to the distribution of localized states and the spatial disorder related to the morphological features of the material. From a semi-classical picture, the charge transport properties are crucially determined by both the carrier mobility and the electrostatic… ▽ More Charge transport properties in organic semiconductors are determined by two kinds of microscopic disorders, namely energetic disorder related to the distribution of localized states and the spatial disorder related to the morphological features of the material. From a semi-classical picture, the charge transport properties are crucially determined by both the carrier mobility and the electrostatic field distribution in the material. Although the effect of disorders on carrier mobility has been widely studied, how electrostatic field distribution is distorted by the presence of disorders and its effect on charge transport remain unanswered. In this paper, we present a modified space-charge-limited current (SCLC) model for spatially disordered organic semiconductors based on the fractional-dimensional electrostatic framework. We show that the thickness dependence of SCLC is related to the spatial disorder in organic semiconductors. For trap-free transport, the SCLC exhibits a modified thickness scaling of $J\propto L^{-3α}$, where the fractional-dimension parameter $α$ accounts for the spatial disorder in organic semiconductors. The trap-limited and field-dependent mobility are also shown to obey an $α$-dependent thickness scaling. The modified SCLC model shows a good agreement with several experiments on spatially disordered organic semiconductors. By applying this model to the experimental data, the standard charge transport parameters can be deduced with better accuracy than by using existing models. △ Less

Submitted 27 May, 2018; originally announced May 2018.

Comments: (Accepted, In-Press), 9 pages, 8 figures, IEEE Transactions on Electron Devices 2018

Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials

Authors: Yee Sin Ang, Hui Ying Yang, L. K. Ang

Abstract: We identify a new universality in the carrier transport of two-dimensional(2D)-material-based Schottky heterostructures. We show that the reversed saturation current ($\mathcal{J}$) scales universally with temperature ($T$) as $ \log(\mathcal{J}/T^β) \propto -1/T$, with $β= 3/2$ for lateral Schottky heterostructures and $β= 1$ for vertical Schottky heterostructures, over a wide range of 2D systems… ▽ More We identify a new universality in the carrier transport of two-dimensional(2D)-material-based Schottky heterostructures. We show that the reversed saturation current ($\mathcal{J}$) scales universally with temperature ($T$) as $ \log(\mathcal{J}/T^β) \propto -1/T$, with $β= 3/2$ for lateral Schottky heterostructures and $β= 1$ for vertical Schottky heterostructures, over a wide range of 2D systems including nonrelativistic electron gas, Rashba spintronic system, single and few-layer graphene, transition metal dichalcogenides and thin-films of topological solids. Such universalities originate from the strong coupling between the thermionic process and the in-plane carrier dynamics. Our model resolves some of the conflicting results from prior works and is in agreement with recent experiments. The universal scaling laws signal the breakdown of $β=2$ scaling in the classic diode equation widely-used over the past 60 years. Our findings shall provide a simple analytical scaling for the extraction of the Schottky barrier height in 2D-material-based heterostructure, thus paving way for both fundamental understanding of nanoscale interface physics and applied device engineering. △ Less

Submitted 19 July, 2018; v1 submitted 5 March, 2018; originally announced March 2018.

Comments: 6 pages, 2 figures, revised version v3 with new title

Journal ref: Phys. Rev. Lett. 121, 056802 (2018)

Fractional Fowler-Nordheim Law for Field Emission from Rough Surface with Nonparabolic Energy Dispersion

Authors: M. Zubair, Yee Sin Ang, L. K. Ang

Abstract: The theories of field electron emission from perfectly planar and smooth canonical surfaces are well understood, but they are not suitable for describing emission from rough, irregular surfaces arising in modern nanoscale electron sources. Moreover, the existing models rely on Sommerfeld's free-electron theory for the description of electronic distribution which is not a valid assumption for moder… ▽ More The theories of field electron emission from perfectly planar and smooth canonical surfaces are well understood, but they are not suitable for describing emission from rough, irregular surfaces arising in modern nanoscale electron sources. Moreover, the existing models rely on Sommerfeld's free-electron theory for the description of electronic distribution which is not a valid assumption for modern materials with nonparabolic energy dispersion. In this paper, we derive analytically a generalized Fowler-Nordheim (FN) type equation that takes into account the reduced space-dimensionality seen by the quantum mechanically tunneling electron at a rough, irregular emission surface. We also consider the effects of non-parabolic energy dispersion on field-emission from narrow-gap semiconductors and few-layer graphene using Kane's band model. The traditional FN equation is shown to be a limiting case of our model in the limit of a perfectly flat surface of a material with parabolic dispersion. The fractional-dimension parameter used in this model can be experimentally calculated from appropriate current-voltage data plot. By applying this model to experimental data, the standard field-emission parameters can be deduced with better accuracy than by using the conventional FN equation. △ Less

Submitted 20 December, 2017; v1 submitted 16 November, 2017; originally announced November 2017.

Comments: 8 pages, 4 figures

Journal ref: IEEE TRANSACTIONS ON ELECTRON DEVICES, SI: VACUUM ELECTRONICS, 2018