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Influence of magnetic quantum confined Stark effect on the spin lifetime of indirect excitons
Authors:
P. Andreakou,
A. V. Mikhailov,
S. Cronenberger,
D. Scalbert,
A. Nalitov,
A. V. Kavokin,
M. Nawrocki,
L. V. Butov,
A. C. Gossard,
M. Vladimirova
Abstract:
We report on the unusual and counter-intuitive behaviour of spin lifetime of excitons in coupled semiconductor quantum wells (CQWs) in the presence of in-plane magnetic field. Instead of conventional acceleration of spin relaxation due to the Larmor precession of electron and hole spins we observe a strong increase of the spin relaxation time at low magnetic fields followed by saturation and decre…
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We report on the unusual and counter-intuitive behaviour of spin lifetime of excitons in coupled semiconductor quantum wells (CQWs) in the presence of in-plane magnetic field. Instead of conventional acceleration of spin relaxation due to the Larmor precession of electron and hole spins we observe a strong increase of the spin relaxation time at low magnetic fields followed by saturation and decrease at higher fields. We argue that this non-monotonic spin relaxation dynamics is a fingerprint of the magnetic quantum confined Stark effect. In the presence of electric field along the CQW growth axis, an applied magnetic field efficiently suppresses the exciton spin coherence, due to inhomogeneous broadening of the $g$-factor distribution.
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Submitted 4 January, 2016;
originally announced January 2016.
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Edge states in polariton honeycomb lattices
Authors:
M. Milicevic,
T. Ozawa,
P. Andreakou,
I. Carusotto,
T. Jacqmin,
E. Galopin,
A. Lemaître,
L. Le Gratiet,
I. Sagnes,
J. Bloch,
A. Amo
Abstract:
The experimental study of edge states in atomically-thin layered materials remains a challenge due to the difficult control of the geometry of the sample terminations, the stability of dangling bonds and the need to measure local properties. In the case of graphene, localised edge modes have been predicted in zig-zag and bearded edges, characterised by flat dispersions connecting the Dirac points.…
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The experimental study of edge states in atomically-thin layered materials remains a challenge due to the difficult control of the geometry of the sample terminations, the stability of dangling bonds and the need to measure local properties. In the case of graphene, localised edge modes have been predicted in zig-zag and bearded edges, characterised by flat dispersions connecting the Dirac points. Polaritons in semiconductor microcavities have recently emerged as an extraordinary photonic platform to emulate 1D and 2D Hamiltonians, allowing the direct visualization of the wavefunctions in both real- and momentum-space as well as of the energy dispersion of eigenstates via photoluminescence experiments. Here we report on the observation of edge states in a honeycomb lattice of coupled micropillars. The lowest two bands of this structure arise from the coupling of the lowest energy modes of the micropillars, and emulate the π and π* bands of graphene. We show the momentum space dispersion of the edge states associated to the zig-zag and bearded edges, holding unidimensional quasi-flat bands. Additionally, we evaluate polarisation effects characteristic of polaritons on the properties of these states.
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Submitted 22 April, 2015;
originally announced April 2015.
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Transport of indirect excitons in ZnO quantum wells
Authors:
Yuliya Kuznetsova,
Fedor Fedichkin,
Peristera Andreakou,
Eric Calman,
Leonid Butov,
Pierre Lefebvre,
Thierry Bretagnon,
Thierry Guillet,
Maria Vladimirova,
C. Morhain,
Jean-Michel Chauveau
Abstract:
We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.
We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.
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Submitted 23 July, 2015; v1 submitted 10 March, 2015;
originally announced March 2015.
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Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells
Authors:
F. Fedichkin,
P. Andreakou,
B. Jouault,
M. Vladimirova,
T. Guillet,
C. Brimont,
P. Valvin,
T. Bretagnon,
A. Dussaigne,
N. Grandjean,
P. Lefebvre
Abstract:
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum wells is activated by dipole-dipole repulsion. The latter induces an emission blue shift that increases linearly with exciton density, whereas the ra…
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We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum wells is activated by dipole-dipole repulsion. The latter induces an emission blue shift that increases linearly with exciton density, whereas the radiative recombination rate increases exponentially. Under continuous, localized excitation, we measure a continuous red shift of the emission, as excitons propagate away from the excitation spot. This shift corresponds to a steady-state gradient of exciton density, measured over several tens of micrometers. Time-resolved micro-photoluminescence experiments provide information on the dynamics of recombination and transport of dipolar excitons. We account for the ensemble of experimental results by solving the nonlinear drift-diffusion equation. Quantitative analysis suggests that in such structures, exciton propagation on the scale of 10 to 20 microns is mainly driven by diffusion, rather than by drift, due to the strong disorder and the presence of nonradiative defects. Secondary exciton creation, most probably by the intense higher-energy luminescence, guided along the sample plane, is shown to contribute to the exciton emission pattern on the scale up to 100 microns. The exciton propagation length is strongly temperature dependent, the emission being quenched beyond a critical distance governed by nonradiative recombination.
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Submitted 11 February, 2015;
originally announced February 2015.
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Stirring Potential for Indirect Excitons
Authors:
M. W. Hasling,
Y. Y. Kuznetsova,
P. Andreakou,
J. R. Leonard,
E. V. Calman,
C. Dorow,
L. V. Butov,
M. Hanson,
A. C. Gossard
Abstract:
We demonstrate experimental proof of principle for a stirring potential for indirect excitons. The azimuthal wavelength of this stirring potential is set by the electrode periodicity, the amplitude is controlled by the applied AC voltage, and the angular velocity is controlled by the AC frequency.
We demonstrate experimental proof of principle for a stirring potential for indirect excitons. The azimuthal wavelength of this stirring potential is set by the electrode periodicity, the amplitude is controlled by the applied AC voltage, and the angular velocity is controlled by the AC frequency.
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Submitted 2 October, 2014;
originally announced October 2014.
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Nonlinear optical spectroscopy of indirect excitons in biased coupled quantum wells
Authors:
P. Andreakou,
S. Cronenberger,
D. Scalbert,
A. Nalitov,
N. A. Gippius,
A. V. Kavokin,
M. Nawrocki,
J. R. Leonard,
L. V. Butov,
K. L. Campman,
A. C. Gossard,
M. Vladimirova
Abstract:
Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by addressed by time-resolved pump-probe spectroscopy. Our experiments make it possible to unravel and compare spin dynamics of direct excitons, indirect excitons…
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Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by addressed by time-resolved pump-probe spectroscopy. Our experiments make it possible to unravel and compare spin dynamics of direct excitons, indirect excitons and residual free electrons in coupled quantum wells. Measured spin relaxation time of indirect excitons exceeds not only one of direct excitons, but also one of free electrons by two orders of magnitude.
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Submitted 3 October, 2014; v1 submitted 21 July, 2014;
originally announced July 2014.
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Optically Controlled Excitonic Transistor
Authors:
P. Andreakou,
S. V. Poltavtsev,
J. R. Leonard,
E. V. Calman,
M. Remeika,
Y. Y. Kuznetsova,
L. V. Butov,
J. Wilkes,
M. Hanson,
A. C. Gossard
Abstract:
Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical exciton…
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Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers.
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Submitted 29 October, 2013;
originally announced October 2013.
