Gain-switched semiconductor laser driven soliton microcombs
Authors:
Wenle Weng,
Aleksandra Kaszubowska-Anandarajah,
Jijun He,
Prajwal D. Lakshmijayasimha,
Erwan Lucas,
Junqiu Liu,
Prince M. Anandarajah,
Tobias J. Kippenberg
Abstract:
Dissipative Kerr solitons (DKSs) have been generated via injection locking of chipscale microresonators to continuous-wave (CW) III-V lasers. This advance has enabled fully integrated hybrid microcomb systems that operate in turnkey mode and can access microwave repetition rates. Yet, CW-driven DKS exhibits low energy conversion efficiency and high optical power threshold, especially when the repe…
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Dissipative Kerr solitons (DKSs) have been generated via injection locking of chipscale microresonators to continuous-wave (CW) III-V lasers. This advance has enabled fully integrated hybrid microcomb systems that operate in turnkey mode and can access microwave repetition rates. Yet, CW-driven DKS exhibits low energy conversion efficiency and high optical power threshold, especially when the repetition rate is within the microwave range that is convenient for direct detection with off-the-shelf electronics. Efficient DKS can be generated by spatiotemporally structured light (i.e., pulsed pum**), which to date however has required complex cascaded modulators for pulse synthesis. Here we demonstrate a photonic integrated approach to pulsed pum**. By actively switching the bias current of injection-locked III-V semiconductor lasers with switching frequencies in the X-band and K-band microwave ranges, we pump a crystalline and integrated microresonators with coherent picosecond laser pulses, achieving DKS generation with stable repetition rates and lowering the required average pum** power by one order of magnitude to a record-setting level of a few milliwatts. In addition, we unveil the critical role of the phase profile of the pum** pulses, and for the first time implement phase engineering on the pulsed pum** scheme by either accessing a multimode lasing regime in the gain-switching mode or applying external chir** to support robust single-soliton generation. Our work leverages the advantages of gain switching technique and pulse pum** technique, and establishes the merits of combining distinct compact frequency comb platforms that enhance the potential of energy-efficient chipscale microcombs.
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Submitted 20 February, 2021; v1 submitted 18 June, 2020;
originally announced June 2020.
Numerical investigation into the injection-locking phenomena of gain switched lasers for optical frequency comb generation
Authors:
Sean P. O Duill,
Prince M. Anandarajah,
Rui Zhou,
Liam P. Barry
Abstract:
We present detailed numerical simulations of the laser dynamics that describe optical frequency comb formation by injection-locking a gain-switched laser. The typical rate equations for semiconductor lasers including stochastic carrier recombination and spontaneous emission suffice to show the injection-locking behavior of gain switched lasers, and we show how the optical frequency comb evolves st…
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We present detailed numerical simulations of the laser dynamics that describe optical frequency comb formation by injection-locking a gain-switched laser. The typical rate equations for semiconductor lasers including stochastic carrier recombination and spontaneous emission suffice to show the injection-locking behavior of gain switched lasers, and we show how the optical frequency comb evolves starting from the free-running state, right through the final injection- locked state. Unlike the locking of continuous wave lasers, we show that the locking range for gain switched lasers is considerably greater because injection locking can be achieved by injecting at frequencies close to one of the comb lines. The quality of the comb lines are formally assessed by calculating the FM-noise spectral density and we show that under injection-locking conditions the FM-noise spectral density of the comb lines tend to that of the maser laser.
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Submitted 26 March, 2015;
originally announced March 2015.
