On an extension of generalized coherent pairs of orthogonal polynomials: the classical case
Authors:
Jong Hwan Lee,
Sung Jun An,
Hwan Yong Lee
Abstract:
Given two quasi-definite moment functionals, the corresponding orthogonal polynomial systems satisfy an algebraic differential relation(called an extended coherent pair). We study generalizing extended coherent pairs that unify extended coherent pairs and extended symmetric coherent pairs and find the related coefficients. When one of the moment functionals is (strongly) classical, we find another…
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Given two quasi-definite moment functionals, the corresponding orthogonal polynomial systems satisfy an algebraic differential relation(called an extended coherent pair). We study generalizing extended coherent pairs that unify extended coherent pairs and extended symmetric coherent pairs and find the related coefficients. When one of the moment functionals is (strongly) classical, we find another orthogonal polynomial system to find three-term recurrence coefficients. Moreover, we determine the companion moment functional as a rational modification of the classical one.
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Submitted 24 February, 2023;
originally announced February 2023.
Controllable p$-$n junctions in three$-$dimensional Dirac semimetal Cd$_3$As$_2$ nanowires
Authors:
Janice Ruth Bayogan,
Kidong Park,
Zhuo Bin Siu,
Sung ** An,
Chiu-Chun Tang,
Xiao-Xiao Zhang,
Man Suk Song,
Jeunghee Park,
Mansoor B. A. Jalil,
Naoto Nagaosa,
Kazuhiko Hirakawa,
Christian Schönenberger,
Jungpil Seo,
Minkyung Jung
Abstract:
We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically w…
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We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically when a magnetic field is applied perpendicular to the nanowire, which is due to the suppression of Klein tunneling. In this regime, the device shows quantum dot behavior. On the other hand, clear conductance plateaus are observed in the n$-$n regime likely owing to the cyclotron motion of carriers at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.
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Submitted 10 September, 2019;
originally announced September 2019.
