Defect engineering of silicon with ion pulses from laser acceleration
Authors:
Walid Redjem,
Ariel J. Amsellem,
Frances I. Allen,
Gabriele Benndorf,
Jianhui Bin,
Stepan Bulanov,
Eric Esarey,
Leonard C. Feldman,
Javier Ferrer Fernandez,
Javier Garcia Lopez,
Laura Geulig,
Cameron R. Geddes,
Hussein Hijazi,
Qing Ji,
Vsevolod Ivanov,
Boubacar Kante,
Anthony Gonsalves,
Jan Meijer,
Kei Nakamura,
Arun Persaud,
Ian Pong,
Lieselotte Obst-Huebl,
Peter A. Seidl,
Jacopo Simoni,
Carl Schroeder
, et al. (5 additional authors not shown)
Abstract:
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that…
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Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that were locally pre-heated by high energy ions. We observe low energy ion fluences of ~10^16 cm^-2, about four orders of magnitude higher than the fluence of high energy (MeV) ions. In the areas of highest energy deposition, silicon crystals exfoliate from single ion pulses. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increase in areas with high ion flux much more than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Laser ion acceleration generates aligned pulses of high and low energy ions that expand the parameter range for defect engineering and do** of semiconductors with tunable balances of ion flux, damage rates and local heating.
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Submitted 25 March, 2022;
originally announced March 2022.
DeepGhostBusters: Using Mask R-CNN to Detect and Mask Ghosting and Scattered-Light Artifacts from Optical Survey Images
Authors:
Dimitrios Tanoglidis,
Aleksandra Ćiprijanović,
Alex Drlica-Wagner,
Brian Nord,
Michael H. L. S. Wang,
Ariel Jacob Amsellem,
Kathryn Downey,
Sydney Jenkins,
Diana Kafkes,
Zhuoqi Zhang
Abstract:
Wide-field astronomical surveys are often affected by the presence of undesirable reflections (often known as "ghosting artifacts" or "ghosts") and scattered-light artifacts. The identification and mitigation of these artifacts is important for rigorous astronomical analyses of faint and low-surface-brightness systems. However, the identification of ghosts and scattered-light artifacts is challeng…
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Wide-field astronomical surveys are often affected by the presence of undesirable reflections (often known as "ghosting artifacts" or "ghosts") and scattered-light artifacts. The identification and mitigation of these artifacts is important for rigorous astronomical analyses of faint and low-surface-brightness systems. However, the identification of ghosts and scattered-light artifacts is challenging due to a) the complex morphology of these features and b) the large data volume of current and near-future surveys. In this work, we use images from the Dark Energy Survey (DES) to train, validate, and test a deep neural network (Mask R-CNN) to detect and localize ghosts and scattered-light artifacts. We find that the ability of the Mask R-CNN model to identify affected regions is superior to that of conventional algorithms and traditional convolutional neural networks methods. We propose that a multi-step pipeline combining Mask R-CNN segmentation with a classical CNN classifier provides a powerful technique for the automated detection of ghosting and scattered-light artifacts in current and near-future surveys.
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Submitted 16 September, 2021;
originally announced September 2021.
