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All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
Authors:
Léo Bourdet,
Louis Hutin,
Benoit Bertrand,
Andrea Corna,
Heorhii Bohuslavskyi,
Anthony Amisse,
Alessandro Crippa,
Romain Maurand,
Sylvain Barraud,
Matias Urdampilleta,
Christopher Bäuerle,
Tristan Meunier,
Marc Sanquer,
Xavier Jehl,
Silvano De Franceschi,
Yann-Michel Niquet,
Maud Vinet
Abstract:
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valle…
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We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.
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Submitted 20 December, 2019;
originally announced December 2019.
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Towards scalable silicon quantum computing
Authors:
M. Vinet,
L. Hutin,
B. Bertrand,
S. Barraud,
J. -M. Hartmann,
Y. -J. Kim,
V. Mazzocchi,
A. Amisse,
H. Bohuslavskyi,
L. Bourdet,
A. Crippa,
X. Jehl,
R. Maurand,
Y. -M. Niquet,
M. Sanquer,
B. Venitucci,
B. Jadot,
E. Chanrion,
P. -A. Mortemousque,
C. Spence,
M. Urdampilleta,
S. De Franceschi,
T. Meunier
Abstract:
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
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Submitted 20 December, 2019;
originally announced December 2019.
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All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
Authors:
L. Hutin,
L. Bourdet,
B. Bertrand,
A. Corna,
H. Bohuslavskyi,
A. Amisse,
A. Crippa,
R. Maurand,
S. Barraud,
M. Urdampilleta,
C. Bäuerle,
T. Meunier,
M. Sanquer,
X. Jehl,
S. De Franceschi,
Y. -M. Niquet,
M. Vinet
Abstract:
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected config…
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We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration.
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Submitted 20 December, 2019;
originally announced December 2019.
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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
Authors:
A. Crippa,
R. Ezzouch,
A. Aprá,
A. Amisse,
L. Houtin,
B. Bertrand,
M. Vinet,
M. Urdampilleta,
T. Meunier,
M. Sanquer,
X. Jehl,
R. Maurand,
S. De Franceschi
Abstract:
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using i…
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Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1\,K.
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Submitted 2 July, 2019; v1 submitted 11 November, 2018;
originally announced November 2018.
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Electrical spin driving by $g$-matrix modulation in spin-orbit qubits
Authors:
Alessandro Crippa,
Romain Maurand,
Léo Bourdet,
Dharmraj Kotekar-Patil,
Anthony Amisse,
Xavier Jehl,
Marc Sanquer,
Romain Laviéville,
Heorhii Bohuslavskyi,
Louis Hutin,
Sylvain Barraud,
Maud Vinet,
Yann-Michel Niquet,
Silvano De Franceschi
Abstract:
In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-…
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In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-voltage dependence and anisotropy of the hole $g$-factors. We show that a $g$-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the $g$ factors, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.
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Submitted 4 April, 2018; v1 submitted 24 October, 2017;
originally announced October 2017.
