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All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance
Authors:
Jiacheng Shi,
Victor Lopez-Dominguez,
Sevdenur Arpaci,
Vinod K. Sangwan,
Farzad Mahfouzi,
**woong Kim,
Jordan G. Athas,
Mohammad Hamdi,
Can Aygen,
Charudatta Phatak,
Mario Carpentieri,
Jidong S. Jiang,
Matthew A. Grayson,
Nicholas Kioussis,
Giovanni Finocchio,
Mark C. Hersam,
Pedram Khalili Amiri
Abstract:
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR)…
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Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures were not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here we show three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.
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Submitted 23 November, 2023;
originally announced November 2023.
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A magneto-mechanical accelerometer based on magnetic tunnel junctions
Authors:
Andrea Meo,
Francesca Garescì,
Victor Lopez-Dominguez,
Davi Rodrigues,
Eleonora Raimondo,
Vito Puliafito,
Pedram Khalili Amiri,
Mario Carpentieri,
Giovanni Finocchio
Abstract:
Accelerometers have widespread applications and are an essential component in many areas such as automotive, consumer electronics and industrial applications. Most commercial accelerometers are based on micro-electromechanical system (MEMS) that are limited in downscaling and power consumption. Spintronics-based accelerometers have been proposed as alternatives, however, current proposals suffer f…
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Accelerometers have widespread applications and are an essential component in many areas such as automotive, consumer electronics and industrial applications. Most commercial accelerometers are based on micro-electromechanical system (MEMS) that are limited in downscaling and power consumption. Spintronics-based accelerometers have been proposed as alternatives, however, current proposals suffer from design limitations that result in reliability issues and high cost. Here we propose spintronic accelerometers with magnetic tunnel junctions (MTJs) as building block, which map accelerations into a measurable voltage across the MTJ terminals. The device exploits elastic and dipolar coupling as a sensing mechanism and the spintronic diode effect for the direct read out of the acceleration. The proposed technology represents a potentially competitive and scalable solution to current capacitive MEMS-based approaches that could lead to a step forward in many of the commercial applications.
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Submitted 10 July, 2023;
originally announced July 2023.
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Antiferromagnetic parametric resonance driven by voltage-controlled magnetic anisotropy
Authors:
Riccardo Tomasello,
Roman Verba,
Victor Lopez-Dominguez,
Francesca Garesci,
Mario Carpentieri,
Massimiliano Di Ventra,
Pedram Khalili Amiri,
Giovanni Finocchio
Abstract:
Voltage controlled magnetic anisotropy (VCMA) is a low-energy alternative to manipulate the ferromagnetic state, which has been recently considered also in antiferromagnets (AFMs). Here, we theoretically demonstrate that VCMA can be used to excite linear and parametric resonant modes in easy-axis AFMs with perpendicular anisotropy, thus opening the way for an efficient electrical control of the Ne…
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Voltage controlled magnetic anisotropy (VCMA) is a low-energy alternative to manipulate the ferromagnetic state, which has been recently considered also in antiferromagnets (AFMs). Here, we theoretically demonstrate that VCMA can be used to excite linear and parametric resonant modes in easy-axis AFMs with perpendicular anisotropy, thus opening the way for an efficient electrical control of the Neel vector, and for detection of high-frequency dynamics. Our work leads to two key results: (i) VCMA parametric pum** experiences the so-called exchange enhancement of the coupling efficiency and, thus, is 1-2 orders of magnitude more efficient than microwave magnetic fields or spin-orbit-torques, and (ii) it also allows for zero-field parametric resonance, which cannot be achieved by other parametric pum** mechanisms in AFMs with out-of-plane easy axis. Therefore, we demonstrate that the VCMA parametric pum** is the most promising method for coherent excitation and manipulation of AFM order in perpendicular easy-axis AFMs.
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Submitted 2 February, 2022;
originally announced February 2022.
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Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements
Authors:
Sevdenur Arpaci,
Victor Lopez-Dominguez,
Jiacheng Shi,
Luis Sánchez-Tejerina,
Francesca Garesci,
Chulin Wang,
Xueting Yan,
Vinod K. Sangwan,
Matthew Grayson,
Mark C. Hersam,
Giovanni Finocchio,
Pedram Khalili Amiri
Abstract:
There is accelerating interest in develo** memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bil…
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There is accelerating interest in develo** memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn$_3$/Pt devices. A six-terminal double-cross device is constructed, with an IrMn$_3$ pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn$_3$ after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn$_3$ pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.
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Submitted 5 May, 2021;
originally announced May 2021.
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Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with vertical composition gradient
Authors:
Zhenyi Zheng,
Yue Zhang,
Victor Lopez-Dominguez,
Luis Sánchez-Tejerina,
Jiacheng Shi,
Xueqiang Feng,
Lei Chen,
Zilu Wang,
Zhizhong Zhang,
Kun Zhang,
Bin Hong,
Yong Xu,
Youguang Zhang,
Mario Carpentieri,
Albert Fert,
Giovanni Finocchio,
Weisheng Zhao,
Pedram Khalili Amiri
Abstract:
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane str…
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Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we reported bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii-Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.
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Submitted 21 January, 2021;
originally announced January 2021.
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Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction
Authors:
Riccardo Tomasello,
Luis Sanchez-Tejerina,
Victor Lopez-Dominguez,
Francesca Garesci,
Anna Giordano,
Mario Carpentieri,
Pedram Khalili Amiri,
Giovanni Finocchio
Abstract:
Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. From a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for particular applications. Here, we present a study focusing on antiferromagnetic materials having an easy…
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Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. From a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for particular applications. Here, we present a study focusing on antiferromagnetic materials having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya interaction (IDMI). An analytical theory is developed and benchmarked against full numerical micromagnetic simulations, describing the main properties of the ground state in antiferromagnets and how it is possible to estimate the IDMI from experimental measurements. The effect of the IDMI on the electrical switching dynamics of the antiferromagnetic element is also analyzed. Our theoretical results can be used for the design of multi-terminal heavy metal/antiferromagnet memory devices.
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Submitted 4 April, 2020;
originally announced April 2020.
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The promise of spintronics for unconventional computing
Authors:
Giovanni Finocchio,
Massimiliano Di Ventra,
Kerem Y. Camsari,
Karin Everschor-Sitte,
Pedram Khalili Amiri,
Zhongming Zeng
Abstract:
Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient device…
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Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient devices and unconventional operations for at least three main reasons: (i) the low-power requirements of spin-based devices, i.e., requiring no standby power for operation and the possibility to write information with small dynamic energy dissipation, (ii) the strong nonlinearity, time nonlocality, and/or stochasticity that spintronic devices can exhibit, and (iii) their compatibility with CMOS logic manufacturing processes. At the same time, the high endurance and speed of spintronic devices means that they can be rewritten or reconfigured frequently over the lifetime of a circuit, a feature that is essential in many emerging computing concepts. In this perspective, we will discuss how spintronics may aid in the realization of efficient devices primarily based on magnetic tunnel junctions and how those devices can impact in the development of three unconventional computing paradigms, namely, reservoir computing, probabilistic computing and memcomputing that in our opinion may be used to address some limitations of modern computers, providing a realistic path to intelligent hybrid CMOS-spintronic systems.
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Submitted 16 October, 2019;
originally announced October 2019.
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Dynamics of domain walls motion driven by spin-orbit torque in antiferromagnets
Authors:
Luis Sanchez-Tejerina,
Vito Puliafito,
Pedram Khalili Amiri,
Mario Carpentieri,
Giovanni Finocchio
Abstract:
Ultrafast dynamics of antiferromagnetic materials is an appealing feature for novel spintronic devices. Several experiments have shown that both, the static states and the dynamical behavior of the antiferromagnetic order, are strictly related to stabilization of domains and domain wall (DW) motion. Hence for a quantitative understanding of statics and dynamics of multidomain states in antiferroma…
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Ultrafast dynamics of antiferromagnetic materials is an appealing feature for novel spintronic devices. Several experiments have shown that both, the static states and the dynamical behavior of the antiferromagnetic order, are strictly related to stabilization of domains and domain wall (DW) motion. Hence for a quantitative understanding of statics and dynamics of multidomain states in antiferromagnetic materials a full micromagnetic framework is necessary. Here, we use this model to study the antiferromagnetic DW motion driven by the spin-orbit torque. The main result is the derivation of analytical expressions for the DW width and velocity that exhibit a very good agreement with the numerical simulations in a wide range of parameters. We also find that a mechanism limiting the maximum applicable current in an antiferromagnetic racetrack memory is the continuous nucleation of the domains from the edge, which is qualitatively different from what is observed in ferromagnetic racetracks.
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Submitted 23 January, 2024; v1 submitted 4 April, 2019;
originally announced April 2019.
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Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition-Metal Dichalcogenide/Ferromagnet Bilayers
Authors:
Qiming Shao,
Guoqiang Yu,
Yann-Wen Lan,
Yumeng Shi,
Ming-Yang Li,
Cheng Zheng,
Xiaodan Zhu,
Lain-Jong Li,
Pedram Khalili Amiri,
Kang L. Wang
Abstract:
The electronic and optoelectronic properties of two dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So fa…
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The electronic and optoelectronic properties of two dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS$_2$ or WSe$_2$)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials.
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Submitted 20 November, 2018;
originally announced November 2018.
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Spintronic nano-scale harvester of broadband microwave energy
Authors:
Bin Fang,
Mario Carpentieri,
Steven Louis,
Vasyl Tiberkevich,
Andrei Slavin,
Ilya N. Krivorotov,
Riccardo Tomasello,
Anna Giordano,
Hongwen Jiang,
Jialin Cai,
Yaming Fan,
Zehong Zhang,
Baoshun Zhang,
Jordan A. Katine,
Kang L. Wang,
Pedram Khalili Amiri,
Giovanni Finocchio,
Zhongming Zeng
Abstract:
The harvesting of ambient radio-frequency (RF) energy is an attractive and clean way to realize the idea of self-powered electronics. Here we present a design for a microwave energy harvester based on a nanoscale spintronic diode (NSD). This diode contains a magnetic tunnel junction with a canted magnetization of the free layer, and can convert RF energy over the frequency range from 100 MHz to 1.…
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The harvesting of ambient radio-frequency (RF) energy is an attractive and clean way to realize the idea of self-powered electronics. Here we present a design for a microwave energy harvester based on a nanoscale spintronic diode (NSD). This diode contains a magnetic tunnel junction with a canted magnetization of the free layer, and can convert RF energy over the frequency range from 100 MHz to 1.2 GHz into DC electric voltage. An attractive property of the developed NSD is the generation of an almost constant DC voltage in a wide range of frequencies of the external RF signals. We further show that the developed NSD provides sufficient DC voltage to power a low-power nanodevice - a black phosphorus photo-sensor. Our results demonstrate that the developed NSD could pave the way for using spintronic detectors as building blocks for self-powered nano-systems, such as implantable biomedical devices, wireless sensors, and portable electronics.
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Submitted 30 March, 2018; v1 submitted 1 January, 2018;
originally announced January 2018.
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Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/cap** layer structures
Authors:
Shouzhong Peng,
Weisheng Zhao,
Junfeng Qiao,
Li Su,
Jiaqi Zhou,
Hongxin Yang,
Qianfan Zhang,
Youguang Zhang,
Cecile Grezes,
Pedram Khalili Amiri,
Kang L. Wang
Abstract:
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA) is required to achieve high thermal stability. Here we use first-principles calculations to investigate the magnetic anisotropy energy (MAE) of MgO/CoFe/cap**…
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Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA) is required to achieve high thermal stability. Here we use first-principles calculations to investigate the magnetic anisotropy energy (MAE) of MgO/CoFe/cap** layer structures, where the cap** materials include 5d metals Hf, Ta, Re, Os, Ir, Pt, Au and 6p metals Tl, Pb, Bi. We demonstrate that it is feasible to enhance PMA by using proper cap** materials. Relatively large PMA is found in the structures with cap** materials of Hf, Ta, Os, Ir and Pb. More importantly, the MgO/CoFe/Bi structure gives rise to giant PMA (6.09 mJ/m2), which is about three times larger than that of the MgO/CoFe/Ta structure. The origin of the MAE is elucidated by examining the contributions to MAE from each atomic layer and orbital. These findings provide a comprehensive understanding of the PMA and point towards the possibility to achieve advanced-node STT-MRAM with high thermal stability.
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Submitted 20 December, 2016; v1 submitted 7 May, 2016;
originally announced May 2016.
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Electric-field guiding of magnetic skyrmions
Authors:
Pramey Upadhyaya,
Guoqiang Yu,
Pedram Khalili Amiri,
Kang L. Wang
Abstract:
We theoretically study equilibrium and dynamic properties of nanosized magnetic skyrmions in thin magnetic films with broken inversion symmetry, where electric field couples to magnetization via spin-orbit coupling. Based on a symmetry-based phenomenology and micromagnetic simulations we show that this electric-field coupling, via renormalizing the micromagnetic energy, modifies the equilibrium pr…
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We theoretically study equilibrium and dynamic properties of nanosized magnetic skyrmions in thin magnetic films with broken inversion symmetry, where electric field couples to magnetization via spin-orbit coupling. Based on a symmetry-based phenomenology and micromagnetic simulations we show that this electric-field coupling, via renormalizing the micromagnetic energy, modifies the equilibrium properties of the skyrmion. This change, in turn, results in a significant alteration of the current-induced skyrmion motion. Particularly, speed and direction of the skyrmion can be manipulated by designing a desired energy landscape electrically, which we describe within Thiele's analytical model and demonstrate in micromagnetic simulations including electric-field-controlled magnetic anisotropy. We additionally use this electric-field control to construct gates for controlling skyrmion motion exhibiting a transistor-like and multiplexer-like function. The proposed electric-field effect can thus provide a low energy electrical knob to extend the reach of information processing with skyrmions.
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Submitted 15 May, 2015;
originally announced May 2015.
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Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field
Authors:
Bin Fang,
Mario Carpentieri,
Xiaojie Hao,
Hongwen Jiang,
Jordan A. Katine,
Ilya N. Krivorotov,
Berthold Ocker,
Juergen Langer,
Kang L. Wang,
Baoshun Zhang,
Bruno Azzerboni,
Pedram Khalili Amiri,
Giovanni Finocchio,
Zhongming Zeng
Abstract:
Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts, which cannot operate at low input power. Here, we demonstrate nanoscale microwave detectors exhibiting record…
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Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts, which cannot operate at low input power. Here, we demonstrate nanoscale microwave detectors exhibiting record-high detection sensitivity of 75400 mV mW$^{-1}$ at room temperature, without any external bias fields, for input microwave power down to 10 nW. This sensitivity is 20x and 6x larger than state-of-the-art Schottky diode detectors (3800 mV mW$^{-1}$) and existing spintronic diodes with >1000 Oe magnetic bias (12000 mV mW$^{-1}$), respectively. Micromagnetic simulations supported by microwave emission measurements reveal the essential role of the injection locking to achieve this sensitivity performance. The results enable dramatic improvements in the design of low input power microwave detectors, with wide-ranging applications in telecommunications, radars, and smart networks.
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Submitted 18 October, 2014;
originally announced October 2014.
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Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields
Authors:
Guoqiang Yu,
Pramey Upadhyaya,
Yabin Fan,
Juan G Alzate,
Wanjun Jiang,
Kin L. Wong,
So Takei,
Scott A Bender,
Murong Lang,
Jianshi Tang,
Yaroslav Tserkovnyak,
Pedram Khalili Amiri,
Kang L. Wang
Abstract:
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch ferromagnets with a perpendicular (out-of-plane) magnetization. Currently, however, this typically requires the presence of an in-plane external magnetic field, w…
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Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch ferromagnets with a perpendicular (out-of-plane) magnetization. Currently, however, this typically requires the presence of an in-plane external magnetic field, which is a major obstacle for practical applications. Here we report for the first time on SOT-induced switching of out-of-plane magnetized Ta/Co20Fe60B20/TaOx structures without the need for any external magnetic fields, driven by in-plane currents. This is achieved by introducing a lateral structural asymmetry into our devices during fabrication. The results show that a new field-like SOT is induced by in-plane currents in such asymmetric structures. The direction of the current-induced effective field corresponding to this new field-like SOT is out-of-plane, which facilitates switching of perpendicular magnets. This work thus provides a pathway towards bias-field-free SOT devices.
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Submitted 4 November, 2013;
originally announced November 2013.
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Electric-field induced domain-wall dynamics: depinning and chirality switching
Authors:
Pramey Upadhyaya,
Ritika Dusad,
Silas Hoffman,
Yaroslav Tserkovnyak,
Juan G. Alzate,
Pedram Khalili Amiri,
Kang L. Wang
Abstract:
We theoretically study the equilibrium and dynamic properties of nanoscale magnetic tunnel junctions (MTJs) and magnetic wires, in which an electric field controls the magnetic anisotropy through spin-orbit coupling. By performing micromagnetic simulations, we construct a rich phase diagram and find that, in particular, the equilibrium magnetic textures can be tuned between Neel and Bloch domain w…
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We theoretically study the equilibrium and dynamic properties of nanoscale magnetic tunnel junctions (MTJs) and magnetic wires, in which an electric field controls the magnetic anisotropy through spin-orbit coupling. By performing micromagnetic simulations, we construct a rich phase diagram and find that, in particular, the equilibrium magnetic textures can be tuned between Neel and Bloch domain walls in an elliptical MTJ. Furthermore, we develop a phenomenological model of a quasi-one-dimensional domain wall confined by a parabolic potential and show that, near the Neel-to-Bloch-wall transition, a pulsed electric field induces precessional domain-wall motion which can be used to reverse the chirality of a Neel wall and even depin it. This domain-wall motion controlled by electric fields, in lieu of applied current, may provide a model for ultra-low-power domain-wall memory and logic devices.
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Submitted 14 September, 2013;
originally announced September 2013.
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Ultralow-current-density and bias-field-free spin-transfer nano-oscillator
Authors:
Zhongming Zeng,
Giovanni Finocchio,
Baoshun Zhang,
Pedram Khalili Amiri,
Jordan A. Katine,
Ilya N. Krivorotov,
Yiming Huai,
Juergen Langer,
Bruno Azzerboni,
Kang L. Wang,
Hongwen Jiang
Abstract:
The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both large drive currents and external magnetic fields. These issues hinder the implementation of STNOs for practical applications in terms of power dissipation and size…
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The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both large drive currents and external magnetic fields. These issues hinder the implementation of STNOs for practical applications in terms of power dissipation and size. Here, we report microwave measurements on STNOs built with MgO-based magnetic tunnel junctions having a planar polarizer and a perpendicular free layer, where microwave emission with large output power, excited at ultralow current densities, and in the absence of any bias magnetic fields is observed. The measured critical current density is over one order of magnitude smaller than previously reported. These results suggest the possibility of improved integration of STNOs with complementary metal-oxide-semiconductor technology, and could represent a new route for the development of the next-generation of on-chip oscillators.
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Submitted 22 March, 2013;
originally announced March 2013.
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Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions
Authors:
Jian Zhu,
J. A. Katine,
Graham E. Rowlands,
Yu-** Chen,
Zheng Duan,
Juan G. Alzate,
Pramey Upadhyaya,
Juergen Langer,
Pedram Khalili Amiri,
Kang L. Wang,
Ilya N. Krivorotov
Abstract:
We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency…
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We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.
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Submitted 15 May, 2012; v1 submitted 13 May, 2012;
originally announced May 2012.
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Magnetic bit stability: Competition between domain-wall and monodomain switching
Authors:
Silas Hoffman,
Yaroslav Tserkovnyak,
Pedram Khalili Amiri,
Kang L. Wang
Abstract:
We numerically study the thermal stability properties of computer memory storage realized by a magnetic ellipse. In the case of practical magnetic random-access memory devices, the bit can form a spin texture during switching events. To study the energy barrier for thermally-induced switching, we develop a variational procedure to force the bit to traverse a smooth path through configuration space…
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We numerically study the thermal stability properties of computer memory storage realized by a magnetic ellipse. In the case of practical magnetic random-access memory devices, the bit can form a spin texture during switching events. To study the energy barrier for thermally-induced switching, we develop a variational procedure to force the bit to traverse a smooth path through configuration space between the points of stability. We identify textured configurations realizing domain-wall propagation, which may have an energy barrier less than that of the corresponding monodomain model. We contrast the emergence of such micromagnetic effects in thermal versus field-induced switching.
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Submitted 13 February, 2012;
originally announced February 2012.
