Showing 1–24 of 24 results for author: Amin, P

Large-Amplitude, Easy-Plane Spin-Orbit Torque Oscillators Driven by Out-of-Plane Spin Current: A Micromagnetic Study

Authors: Daniel Kubler, David A. Smith, Tommy Nguyen, Fernando Ramos-Diaz, Satoru Emori, Vivek P. Amin

Abstract: Spin torque oscillators are spintronic devices that generate a periodic output signal from a non-periodic input, making them promising candidates for applications like microwave communications and neuromorphic computing. However, traditional spin torque oscillators suffer from a limited precessional cone angle and thermal stability, as well as a need for an applied bias magnetic field. We use micr… ▽ More Spin torque oscillators are spintronic devices that generate a periodic output signal from a non-periodic input, making them promising candidates for applications like microwave communications and neuromorphic computing. However, traditional spin torque oscillators suffer from a limited precessional cone angle and thermal stability, as well as a need for an applied bias magnetic field. We use micromagnetic simulations to demonstrate a novel spin torque oscillator that relies on spin-orbit effects in ferromagnets to overcome these limitations. The key mechanism behind this oscillator is the generation of an out-of-plane spin current, in which both the spin flow and the spin orientation are out-of-plane. The torque from this spin current enables easy-plane coherent magnetic precession with a large cone angle and high thermal stability over a micron-scale lateral area. Moreover, the precession occurs about an internal field in the free layer, thereby eliminating the need for an external bias field. We demonstrate the feasibility of an easy-plane spin-orbit torque oscillator at room temperature over a wide parameter space, including the ratio of the out-of-plane spin current to the conventional spin-Hall spin current, presenting exciting possibilities for this novel spintronic device. △ Less

Submitted 30 June, 2024; originally announced July 2024.

Direct and indirect spin current generation and spin-orbit torques in ferromagnet/nonmagnet/ferromagnet trilayers

Authors: V. P. Amin, G. G. Baez Flores, A. A. Kovalev, K. D. Belashchenko

Abstract: Spin-orbit torques in ferromagnet/nonmagnet/ferromagnet trilayers are studied using a combination of symmetry analysis, circuit theory, semiclassical simulations, and first-principles calculations using the non-equilibrium Green's function method with supercell disorder averaging. We focus on unconventional processes involving the interplay between the two ferromagnetic layers, which are classifie… ▽ More Spin-orbit torques in ferromagnet/nonmagnet/ferromagnet trilayers are studied using a combination of symmetry analysis, circuit theory, semiclassical simulations, and first-principles calculations using the non-equilibrium Green's function method with supercell disorder averaging. We focus on unconventional processes involving the interplay between the two ferromagnetic layers, which are classified into direct and indirect mechanisms. The direct mechanism involves spin current generation by one ferromagnetic layer and its subsequent absorption by the other. In the indirect mechanism, the in-plane spin-polarized current from one ferromagnetic layer ``leaks'' into the other layer, where it is converted into an out-of-plane spin current and reabsorbed by the original layer. The direct mechanism results in a predominantly dam**like torque, which damps the magnetization towards a certain direction $\mathbf{s}_d$. The indirect mechanism results in a predominantly fieldlike torque with respect to a generally different direction $\mathbf{s}_f$. Similar to the current-in-plane giant magnetoresistance, the indirect mechanism is only active if the thickness of the nonmagnetic spacer is smaller than or comparable to the mean-free path. Numerical calculations for a semiclassical model based on the Boltzmann equation confirm the presence of both direct and indirect mechanisms of spin current generation. First-principles calculations reveal sizeable unconventional spin-orbit torques in Co/Cu/Co, Py/Cu/Py, and Co/Pt/Co trilayers and provide strong evidence of indirect spin current generation. △ Less

Submitted 7 December, 2023; originally announced December 2023.

Comments: 27 pages, 10 figures, 7 tables

Self-induced inverse spin Hall effect in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ films

Authors: Pushpendra Gupta, In Jun Park, Anupama Swain, Abhisek Mishra, Vivek P. Amin, Subhankar Bedanta

Abstract: The efficient generation of spin currents and spin torques via spin-orbit coupling is an important goal of spintronics research. One crucial metric for spin current generation is the spin Hall angle, which is the ratio of the spin Hall current to the transversely flowing charge current. A typical approach to measure the spin Hall angle in nonmagnetic materials is to generate spin currents via spin… ▽ More The efficient generation of spin currents and spin torques via spin-orbit coupling is an important goal of spintronics research. One crucial metric for spin current generation is the spin Hall angle, which is the ratio of the spin Hall current to the transversely flowing charge current. A typical approach to measure the spin Hall angle in nonmagnetic materials is to generate spin currents via spin pum** in an adjacent ferromagnetic layer and measure the transverse voltage from the inverse spin Hall effect in the nonmagnetic layer. However, given that the spin Hall effect also occurs in ferromagnets, single ferromagnetic layers could generate a self-induced transverse voltage during spin pum** as well. Here we show that manganite based La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (LSMO) films deposited by pulsed laser deposition exhibit a significant self-induced inverse spin Hall voltage while undergoing spin pum**. We observe efficient spin to charge conversion in the LSMO films via the inverse spin Hall effect. A spin pum** voltage of 1.86 $μ$V is observed in the LSMO (12 nm) film. Using density functional theory and the Kubo formalism, we calculate the intrinsic spin current conductivities of these films and show that they are in reasonable agreement with the experimental measurements. △ Less

Submitted 10 October, 2023; originally announced October 2023.

Pengembangan Model untuk Mendeteksi Kerusakan pada Terumbu Karang dengan Klasifikasi Citra

Authors: Fadhil Muhammad, Alif Bintang Elfandra, Iqbal Pahlevi Amin, Alfan Farizki Wicaksono

Abstract: The abundant biodiversity of coral reefs in Indonesian waters is a valuable asset that needs to be preserved. Rapid climate change and uncontrolled human activities have led to the degradation of coral reef ecosystems, including coral bleaching, which is a critical indicator of coral health conditions. Therefore, this research aims to develop an accurate classification model to distinguish between… ▽ More The abundant biodiversity of coral reefs in Indonesian waters is a valuable asset that needs to be preserved. Rapid climate change and uncontrolled human activities have led to the degradation of coral reef ecosystems, including coral bleaching, which is a critical indicator of coral health conditions. Therefore, this research aims to develop an accurate classification model to distinguish between healthy corals and corals experiencing bleaching. This study utilizes a specialized dataset consisting of 923 images collected from Flickr using the Flickr API. The dataset comprises two distinct classes: healthy corals (438 images) and bleached corals (485 images). These images have been resized to a maximum of 300 pixels in width or height, whichever is larger, to maintain consistent sizes across the dataset. The method employed in this research involves the use of machine learning models, particularly convolutional neural networks (CNN), to recognize and differentiate visual patterns associated with healthy and bleached corals. In this context, the dataset can be used to train and test various classification models to achieve optimal results. By leveraging the ResNet model, it was found that a from-scratch ResNet model can outperform pretrained models in terms of precision and accuracy. The success in develo** accurate classification models will greatly benefit researchers and marine biologists in gaining a better understanding of coral reef health. These models can also be employed to monitor changes in the coral reef environment, thereby making a significant contribution to conservation and ecosystem restoration efforts that have far-reaching impacts on life. △ Less

Submitted 8 August, 2023; originally announced August 2023.

Comments: in Indonesian language

Suppression of Spin Pum** at Metal Interfaces

Authors: Youngmin Lim, Bhuwan Nepal, David A. Smith, Shuang Wu, Abhishek Srivastava, Prabandha Nakarmi, Claudia Mewes, Zijian Jiang, Adbhut Gupta, Dwight D. Viehland, Christoph Klewe, Padraic Shafer, In Jun Park, Timothy Mabe, Vivek P. Amin, Jean J. Heremans, Tim Mewes, Satoru Emori

Abstract: An electrically conductive metal typically transmits or absorbs a spin current. Here, we report on evidence that interfacing two metal thin films can suppress spin transmission and absorption. We examine spin pum** in ferromagnet/spacer/ferromagnet heterostructures, in which the spacer -- consisting of metallic Cu and Cr thin films -- separates the ferromagnetic spin-source and spin-sink layers.… ▽ More An electrically conductive metal typically transmits or absorbs a spin current. Here, we report on evidence that interfacing two metal thin films can suppress spin transmission and absorption. We examine spin pum** in ferromagnet/spacer/ferromagnet heterostructures, in which the spacer -- consisting of metallic Cu and Cr thin films -- separates the ferromagnetic spin-source and spin-sink layers. The Cu/Cr spacer largely suppresses spin pum** -- i.e., neither transmitting nor absorbing a significant amount of spin current -- even though Cu or Cr alone transmits a sizable spin current. The antiferromagnetism of Cr is not essential for the suppression of spin pum**, as we observe similar suppression with Cu/V spacers where V is a nonmagnetic analogue of Cr. We speculate that diverse combinations of spin-transparent metals may form interfaces that suppress spin pum**, although the underlying mechanism remains unclear. Our work may stimulate a new perspective on understanding and engineering spin transport in metallic multilayers. △ Less

Submitted 7 July, 2023; v1 submitted 2 May, 2023; originally announced May 2023.

Journal ref: APL Mater. 11, 101121 (2023)

Large Exotic Spin Torques in Antiferromagnetic Iron Rhodium

Authors: Jonathan Gibbons, Takaaki Dohi, Vivek P. Amin, Fei Xue, Haowen Ren, Jun-Wen Xu, Hanu Arava, Soho Shim, Hilal Saglam, Yuzi Liu, John E. Pearson, Nadya Mason, Amanda K. Petford-Long, Paul M. Haney, Mark D. Stiles, Eric E. Fullerton, Andrew D. Kent, Shunsuke Fukami, Axel Hoffmann

Abstract: Spin torque is a promising tool for driving magnetization dynamics for novel computing technologies. These torques can be easily produced by spin-orbit effects, but for most conventional spin source materials, a high degree of crystal symmetry limits the geometry of the spin torques produced. Magnetic ordering is one way to reduce the symmetry of a material and allow exotic torques, and antiferrom… ▽ More Spin torque is a promising tool for driving magnetization dynamics for novel computing technologies. These torques can be easily produced by spin-orbit effects, but for most conventional spin source materials, a high degree of crystal symmetry limits the geometry of the spin torques produced. Magnetic ordering is one way to reduce the symmetry of a material and allow exotic torques, and antiferromagnets are particularly promising because they are robust against external fields. We present spin torque ferromagnetic resonance measurements and second harmonic Hall measurements characterizing the spin torques in antiferromagnetic iron rhodium alloy. We report extremely large, strongly temperature-dependent exotic spin torques with a geometry apparently defined by the magnetic ordering direction. We find the spin torque efficiency of iron rhodium to be (330$\pm$150) % at 170 K and (91$\pm$32) % at room temperature. We support our conclusions with theoretical calculations showing how the antiferromagnetic ordering in iron rhodium gives rise to such exotic torques. △ Less

Submitted 22 September, 2021; originally announced September 2021.

Comments: 21 pages, 6 figures

Phase-resolved electrical detection of coherently coupled magnonic devices

Authors: Yi Li, Chenbo Zhao, Vivek P. Amin, Zhizhi Zhang, Michael Vogel, Yuzan Xiong, Joseph Sklenar, Ralu Divan, John Pearson, Mark D. Stiles, Wei Zhang, 1 Axel Hoffmann, Valentyn Novosad

Abstract: We demonstrate the electrical detection of magnon-magnon hybrid dynamics in yttrium iron garnet/permalloy (YIG/Py) thin film bilayer devices. Direct microwave current injection through the conductive Py layer excites the hybrid dynamics consisting of the uniform mode of Py and the first standing spin wave ($n=1$) mode of YIG, which are coupled via interfacial exchange. Both the two hybrid modes, w… ▽ More We demonstrate the electrical detection of magnon-magnon hybrid dynamics in yttrium iron garnet/permalloy (YIG/Py) thin film bilayer devices. Direct microwave current injection through the conductive Py layer excites the hybrid dynamics consisting of the uniform mode of Py and the first standing spin wave ($n=1$) mode of YIG, which are coupled via interfacial exchange. Both the two hybrid modes, with Py or YIG dominated excitations, can be detected via the spin rectification signals from the conductive Py layer, providing phase resolution of the coupled dynamics. The phase characterization is also applied to a nonlocally excited Py device, revealing the additional phase shift due to the perpendicular Oersted field. Our results provide a device platform for exploring hybrid magnonic dynamics and probing their phases, which are crucial for implementing coherent information processing with magnon excitations △ Less

Submitted 23 May, 2021; originally announced May 2021.

Journal ref: Appl. Phys. Lett. 118, 202403 (2021)

Qubits made by advanced semiconductor manufacturing

Authors: A. M. J. Zwerver, T. Krähenmann, T. F. Watson, L. Lampert, H. C. George, R. Pillarisetty, S. A. Bojarski, P. Amin, S. V. Amitonov, J. M. Boter, R. Caudillo, D. Corras-Serrano, J. P. Dehollain, G. Droulers, E. M. Henry, R. Kotlyar, M. Lodari, F. Luthi, D. J. Michalak, B. K. Mueller, S. Neyens, J. Roberts, N. Samkharadze, G. Zheng, O. K. Zietz , et al. (4 additional authors not shown)

Abstract: Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabr… ▽ More Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer △ Less

Submitted 29 January, 2021; originally announced January 2021.

Comments: 23 pages, 4 figures, 12 supplementary figures

Journal ref: Nature Electronics 5, 184-190 (2022)

Interfacial spin-orbit torques

Authors: Vivek P. Amin, Paul M. Haney, Mark D. Stiles

Abstract: Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques can originate in both the bulk layers and at interfaces. Classifying spin-orbit torques based on the region that they originate in provides clues as to how to op… ▽ More Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques can originate in both the bulk layers and at interfaces. Classifying spin-orbit torques based on the region that they originate in provides clues as to how to optimize the effect. While most bulk spin-orbit torque contributions are well studied, many of the interfacial contributions allowed by symmetry have yet to be fully explored theoretically and experimentally. To facilitate progress, we review interfacial spin-orbit torques from a semiclassical viewpoint and relate these contributions to recent experimental results. Within the same model, we show the relationship between different interface transport parameters. For charges and spins flowing perpendicular to the interface, interfacial spin-orbit coupling both modifies the mixing conductance of magnetoelectronic circuit theory and gives rise to spin memory loss. For in-plane electric fields, interfacial spin-orbit coupling gives rise to torques described by spin-orbit filtering, spin swap** and precession. In addition, these same interfacial processes generate spin currents that flow into the non-magnetic layer. For in-plane electric fields in trilayer structures, the spin currents generated at the interface between one ferromagnetic layer and the non-magnetic spacer layer can propagate through the non-magnetic layer to produce novel torques on the other ferromagnetic layer. △ Less

Submitted 3 August, 2020; originally announced August 2020.

Comments: The following article has been submitted to the Journal of Applied Physics. After it is published, it will be found at https://aip.scitation.org/journal/jap

Effect of quantum Hall edge strips on valley splitting in silicon quantum wells

Authors: Brian Paquelet Wuetz, Merritt P. Losert, Alberto Tosato, Mario Lodari, Peter L. Bavdaz, Lucas Stehouwer, Payam Amin, James S. Clarke, Susan N. Coppersmith, Amir Sammak, Menno Veldhorst, Mark Friesen, Giordano Scappucci

Abstract: We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases… ▽ More We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $μ$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces. △ Less

Submitted 29 September, 2020; v1 submitted 3 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. Lett. 125, 186801 (2020)

Imaging the valley and orbital Hall effect in monolayer MoS2

Authors: Fei Xue, V. P. Amin, P. M. Haney

Abstract: The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion symmetry, the nonzero Berry curvature results in a valley Hall effect. In this paper we identify a previously unrecognized consequence of Berry curvature in the… ▽ More The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion symmetry, the nonzero Berry curvature results in a valley Hall effect. In this paper we identify a previously unrecognized consequence of Berry curvature in these materials: an electric field-induced change in the electrons' charge density orientation. We use first principles calculations to show that measurements of the electric field-induced change in the charge density or local density of states in MoS$_2$ can be used to measure its energy-dependent valley and orbital Hall conductivity. △ Less

Submitted 16 October, 2020; v1 submitted 26 February, 2020; originally announced February 2020.

Comments: Main text: 5 pages, 4 figures. Supp. Info: 10 pages, 7 figures

Journal ref: Phys. Rev. B 102, 161103 (2020)

Coherent spin pum** in a strongly coupled magnon-magnon hybrid system

Authors: Yi Li, Wei Cao, Vivek P. Amin, Zhizhi Zhang, Jonathan Gibbons, Joseph Sklenar, John Pearson, Paul M. Haney, Mark D. Stiles, William E. Bailey, Valentine Novosad, Axel Hoffmann, Wei Zhang

Abstract: We experimentally identify coherent spin pum** in the magnon-magnon hybrid modes of permalloy/yttrium iron garnet (Py/YIG) bilayers. Using broadband ferromagnetic resonance, an "avoided crossing" is observed between the uniform mode of Py and the spin wave mode of YIG due to the fieldlike interfacial exchange coupling. We also identify additional linewidth suppression and enhancement for the in-… ▽ More We experimentally identify coherent spin pum** in the magnon-magnon hybrid modes of permalloy/yttrium iron garnet (Py/YIG) bilayers. Using broadband ferromagnetic resonance, an "avoided crossing" is observed between the uniform mode of Py and the spin wave mode of YIG due to the fieldlike interfacial exchange coupling. We also identify additional linewidth suppression and enhancement for the in-phase and out-of-phase hybrid modes, respectively, \textcolor{black}{which can be interpreted as concerted dam**like torque from spin pum**}. Our analysis predicts inverse proportionality of both fieldlike and dam**like torques to the square root of the Py thickness, which quantitatively agrees with experiments. △ Less

Submitted 20 March, 2020; v1 submitted 31 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. Lett. 124, 117202 (2020)

Perspectives of Electrically generated spin currents in ferromagnetic materials

Authors: Angie Davidson, Vivek P. Amin, Wafa S. Aljuaid, Paul M. Haney, Xin Fan

Abstract: Spin-orbit coupling enables charge currents to give rise to spin currents and vice versa, which has applications in non-volatile magnetic memories, miniature microwave oscillators, thermoelectric converters and Terahertz devices. In the past two decades, a considerable amount of research has focused on electrical spin current generation in different types of nonmagnetic materials. However, electri… ▽ More Spin-orbit coupling enables charge currents to give rise to spin currents and vice versa, which has applications in non-volatile magnetic memories, miniature microwave oscillators, thermoelectric converters and Terahertz devices. In the past two decades, a considerable amount of research has focused on electrical spin current generation in different types of nonmagnetic materials. However, electrical spin current generation in ferromagnetic materials has only recently been actively investigated. Due to the additional symmetry breaking by the magnetization, ferromagnetic materials generate spin currents with different orientations of spin direction from those observed in nonmagnetic materials. Studies centered on ferromagnets where spin-orbit coupling plays an important role in transport open new possibilities to generate and detect spin currents. We summarize recent developments on this subject and discuss unanswered questions in this emerging field. △ Less

Submitted 27 June, 2019; originally announced June 2019.

Anomalous Spin-Orbit Torques in Magnetic Single-Layer Films

Authors: Wenrui Wang, Tao Wang, Vivek P. Amin, Yang Wang, Anil radhakrishnan, Angie Davidson, Shane R. Allen, T. J. Silva, Hendrik Ohldag, Davor Balzar, Barry L. Zink, Paul M. Haney, John Q. Xiao, David G. Cahill, Virginia O. Lorenz, Xin Fan

Abstract: Spin-orbit interaction (SOI) couples charge and spin transport, enabling electrical control of magnetization. A quintessential example of SOI-induced transport is the anomalous Hall effect (AHE), first observed in 1880, in which an electric current perpendicular to the magnetization in a magnetic film generates charge accumulation on the surfaces. Here we report the observation of a counterpart of… ▽ More Spin-orbit interaction (SOI) couples charge and spin transport, enabling electrical control of magnetization. A quintessential example of SOI-induced transport is the anomalous Hall effect (AHE), first observed in 1880, in which an electric current perpendicular to the magnetization in a magnetic film generates charge accumulation on the surfaces. Here we report the observation of a counterpart of the AHE that we term the anomalous spin-orbit torque (ASOT), wherein an electric current parallel to the magnetization generates opposite spin-orbit torques on the surfaces of the magnetic film. We interpret the ASOT as due to a spin-Hall-like current generated with an efficiency of 0.053+/-0.003 in Ni80Fe20, comparable to the spin Hall angle of Pt. Similar effects are also observed in other common ferromagnetic metals, including Co, Ni, and Fe. First principles calculations corroborate the order of magnitude of the measured values. This work suggests that a strong spin current with spin polarization transverse to magnetization can exist in a ferromagnet, despite spin dephasing. It challenges the current understanding of spin-orbit torque in magnetic/nonmagnetic bilayers, in which the charge-spin conversion in the magnetic layer has been largely neglected. △ Less

Submitted 14 February, 2019; originally announced February 2019.

Comments: 23 pages, 3 figures and 1 table

Intrinsic spin currents in ferromagnets

Authors: V. P. Amin, Junwen Li, M. D. Stiles, P. M. Haney

Abstract: First principles calculations show that electric fields applied to ferromagnets generate spin currents flowing perpendicularly to the electric field. Reduced symmetry in these ferromagnets enables a wide variety of such spin currents. However, the total spin current is approximately the sum of a magnetization-independent spin Hall current and an anisotropic spin anomalous Hall current. Intrinsic s… ▽ More First principles calculations show that electric fields applied to ferromagnets generate spin currents flowing perpendicularly to the electric field. Reduced symmetry in these ferromagnets enables a wide variety of such spin currents. However, the total spin current is approximately the sum of a magnetization-independent spin Hall current and an anisotropic spin anomalous Hall current. Intrinsic spin currents are not subject to dephasing, enabling their spin polarizations to be misaligned with the magnetization, which enables the magnetization-independent spin Hall effect. The spin Hall conductivity and spin anomalous Hall conductivities of transition metal ferromagnets are comparable to those found in heavy metals, opening new avenues for efficient spin current generation in spintronic devices. △ Less

Submitted 24 January, 2019; v1 submitted 13 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. B 99, 220405 (2019)

Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$

Authors: D. Sabbagh, N. Thomas, J. Torres, R. Pillarisetty, P. Amin, H. C. George, K. Singh, A. Budrevich, M. Robinson, D. Merrill, L. Ross, J. Roberts, L. Lampert, L. Massa, S. Amitonov, J. Boter, G. Droulers, H. G. J. Eenink, M. van Hezel, D. Donelson, M. Veldhorst, L. M. K. Vandersypen, J. S. Clarke, G. Scappucci

Abstract: We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of… ▽ More We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $Δ=0.4$ nm and a correlation length of $Λ=3.4$ nm. An upper bound for valley splitting energy of 480 $μ$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits. △ Less

Submitted 21 January, 2019; v1 submitted 15 October, 2018; originally announced October 2018.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Applied 12, 014013 (2019)

The critical role of substrate disorder in valley splitting in Si quantum wells

Authors: Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson, T. J. Knapp, Thomas McJunkin, L. M. K. Vandersypen, Payam Amin, Nicole K. Thomas, James S. Clarke, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum we… ▽ More Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum wells with approximately five monolayers of pure Ge at the upper barrier, finding mobilities as high as 70,000 cm$^2$/Vs, compared to 100,000 cm$^2$/Vs measured in samples with no Ge layer. Activation energy measurements in quantum Hall states corresponding to Fermi levels in the gap between different valley states reveal energy gaps ranging from 30 to over 200 $μ$eV, and we extract a surprisingly strong dependence of the energy gap on electron density. We interpret our results using tight binding theory and argue that our results are evidence that atomic scale disorder at the quantum well interface dominates the behavior of the valley splittings of these modified heterostructures. △ Less

Submitted 15 June, 2018; v1 submitted 5 April, 2018; originally announced April 2018.

Comments: 7 pages

Journal ref: Applied Physics Letters 112, 243107 (2018)

Interface-generated spin currents

Authors: V. P. Amin, J. Zemen, M. D. Stiles

Abstract: Transport calculations based on ab-initio band structures reveal large interface-generated spin currents at Co/Pt, Co/Cu, and Pt/Cu interfaces. These spin currents are driven by in-plane electric fields but flow out-of-plane, and can have similar strengths to spin currents generated by the spin Hall effect in bulk Pt. Each interface generates spin currents with polarization along… ▽ More Transport calculations based on ab-initio band structures reveal large interface-generated spin currents at Co/Pt, Co/Cu, and Pt/Cu interfaces. These spin currents are driven by in-plane electric fields but flow out-of-plane, and can have similar strengths to spin currents generated by the spin Hall effect in bulk Pt. Each interface generates spin currents with polarization along $\bf{\hat{z}} \times \bf{E}$, where $\bf{\hat{z}}$ is the interface normal and $\bf{E}$ denotes the electric field. The Co/Cu and Co/Pt interfaces additionally generate spin currents with polarization along $\bf{\hat{m}} \times (\bf{\hat{z}} \times \bf{E})$, where $\bf{\hat{m}}$ gives the magnetization direction of Co. The latter spin polarization is controlled by---but not aligned with---the magnetization, providing a novel mechanism for generating spin torques in magnetic trilayers. △ Less

Submitted 1 March, 2018; originally announced March 2018.

Journal ref: Phys. Rev. Lett. 121, 136805 (2018)

Spin-orbit torques induced by interface-generated spin currents

Authors: Seung-heon C. Baek, Vivek P. Amin, Young-Wan Oh, Gyungchoon Go, Seung-Jae Lee, M. D. Stiles, Byong-Guk Park, Kyung-** Lee

Abstract: Magnetic torques generated through spin-orbit coupling promise energy-efficient spintronic devices. It is important for applications to control these torques so that they switch films with perpendicular magnetizations without an external magnetic field. One suggested approach uses magnetic trilayers in which the torque on the top magnetic layer can be manipulated by changing the magnetization of t… ▽ More Magnetic torques generated through spin-orbit coupling promise energy-efficient spintronic devices. It is important for applications to control these torques so that they switch films with perpendicular magnetizations without an external magnetic field. One suggested approach uses magnetic trilayers in which the torque on the top magnetic layer can be manipulated by changing the magnetization of the bottom layer. Spin currents generated in the bottom magnetic layer or its interfaces transit the spacer layer and exert a torque on the top magnetization. Here we demonstrate field-free switching in such structures and attribute it to a novel spin current generated at the interface between the bottom layer and the spacer layer. The measured torque has a distinct dependence on the bottom layer magnetization which is consistent with this interface-generated spin current but not the anticipated bulk effects. This other interface-generated spin-orbit torque will enable energy-efficient control of spintronic devices. △ Less

Submitted 22 August, 2017; originally announced August 2017.

Comments: 35 pages (main text + supplementary information)

Journal ref: Nature Materials 17, 509-513 (2018)

Spin Transport at Interfaces with Spin-Orbit Coupling: Formalism

Authors: V. P. Amin, M. D. Stiles

Abstract: We generalize magnetoelectronic circuit theory to account for spin transfer to and from the atomic lattice via interfacial spin-orbit coupling. This enables a proper treatment of spin transport at interfaces between a ferromagnet and a heavy-metal non-magnet. This generalized approach describes spin transport in terms of drops in spin and charge accumulations across the interface (as in the standa… ▽ More We generalize magnetoelectronic circuit theory to account for spin transfer to and from the atomic lattice via interfacial spin-orbit coupling. This enables a proper treatment of spin transport at interfaces between a ferromagnet and a heavy-metal non-magnet. This generalized approach describes spin transport in terms of drops in spin and charge accumulations across the interface (as in the standard approach), but additionally includes the responses from in-plane electric fields and offsets in spin accumulations. A key finding is that in-plane electric fields give rise to spin accumulations and spin currents that can be polarized in any direction, generalizing the Rashba-Edelstein and spin Hall effects. The spin accumulations exert torques on the magnetization at the interface when they are misaligned from the magnetization. The additional out-of-plane spin currents exert torques via the spin-transfer mechanism on the ferromagnetic layer. To account for these phenomena we also describe spin torques within the generalized circuit theory. The additional effects included in this generalized circuit theory suggest modifications in the interpretations of experiments involving spin orbit torques, spin pum**, spin memory loss, the Rashba-Edelstein effect, and the spin Hall magnetoresistance. △ Less

Submitted 18 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. B 94, 104419 (2016)

Spin Transport at Interfaces with Spin-Orbit Coupling: Phenomenology

Authors: V. P. Amin, M. D. Stiles

Abstract: This paper presents the boundary conditions needed for drift-diffusion models to treat interfaces with spin-orbit coupling. Using these boundary conditions for heavy metal/ferromagnet bilayers, solutions of the drift-diffusion equations agree with solutions of the spin-dependent Boltzmann equation and allow for a much simpler interpretation of the results. A key feature of these boundary condition… ▽ More This paper presents the boundary conditions needed for drift-diffusion models to treat interfaces with spin-orbit coupling. Using these boundary conditions for heavy metal/ferromagnet bilayers, solutions of the drift-diffusion equations agree with solutions of the spin-dependent Boltzmann equation and allow for a much simpler interpretation of the results. A key feature of these boundary conditions is their ability to capture the role that in-plane electric fields have on the generation of spin currents that flow perpendicularly to the interface. The generation of these spin currents is a direct consequence of the effect of interfacial spin-orbit coupling on interfacial scattering. In heavy metal/ferromagnet bilayers, these spin currents provide an important mechanism for the creation of dam**-like and field-like torques; they also lead to possible reinterpretations of experiments in which interfacial contributions to spin torques are thought to be suppressed. △ Less

Submitted 22 June, 2016; v1 submitted 21 April, 2016; originally announced April 2016.

Comments: 16 pages, 4 figures; abstract revised, introduction extended, references added, results unchanged

Journal ref: Phys. Rev. B 94, 104420 (2016)

Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction

Authors: V. P. Amin, J. Zemen, J. Železný, T. Jungwirth, Jairo Sinova

Abstract: We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at room temp… ▽ More We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at room temperature. This result provides a sharp contrast to the magnetoresistance, which behaves oppositely for all barrier thicknesses and differs by one order of magnitude between devices. Here the magnetoresistance results from differences in transmission brought upon by changing the tunnel junction's magnetization configuration. The magneto-Seebeck effect results from variations in asymmetry of the energy-dependent transmission instead. We report that this difference in origin allows for CoPt|MgO|Pt to possess strong thermal magnetic-transport anisotropy. △ Less

Submitted 22 April, 2014; originally announced April 2014.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 90, 140406 (2014)

Experimental Demonstration Of Scanned Spin-Precession Microscopy

Authors: V. P. Bhallamudi, C. S. Wolfe, V. P. Amin, D. E. Labanowski, A. J. Berger, D. Stroud, J. Sinova, P. C. Hammel

Abstract: Progress in spintronics has been aided by characterization tools tailored to certain archetypical materials. New device structures and materials will require characterization tools that are material independent, provide sufficient resolution to image locally-varying spin properties and enable subsurface imaging. Here we report the demonstration of a novel spin-microscopy tool based on the variatio… ▽ More Progress in spintronics has been aided by characterization tools tailored to certain archetypical materials. New device structures and materials will require characterization tools that are material independent, provide sufficient resolution to image locally-varying spin properties and enable subsurface imaging. Here we report the demonstration of a novel spin-microscopy tool based on the variation of a global spin-precession signal in response to the localized magnetic field of a scanned probe. We map the local spin density in optically pumped GaAs from this spatially-averaged signal with a resolution of 5.5 microns. This methodology is also applicable to other spin properties and its resolution can be improved. It can extend spin microscopy to device structures not accessible by other techniques, such as buried interfaces and non-optically active materials, due to the universal nature of magnetic interactions between the spins and the probe. △ Less

Submitted 29 November, 2012; originally announced November 2012.

Comments: Supplementary information added at the end of the main article. Main article: 6 pages 5 figures, Supplementary: 9 pages, 6 figures. The original files are PDFLatex

Spin Hall transistor with electrical spin injection

Authors: K. Olejnik, J. Wunderlich, A. C. Irvine, R. P. Campion, V. P. Amin, Jairo Sinova, T. Jungwirth

Abstract: The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor channel. The inverse spin Hall effect (iSHE) detection of spins injected optically in a 2D GaAs and manipulated by a gate-voltage dependent internal spin-orbit… ▽ More The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor channel. The inverse spin Hall effect (iSHE) detection of spins injected optically in a 2D GaAs and manipulated by a gate-voltage dependent internal spin-orbit field has recently led to the experimental demonstration of a spin transistor logic device. The aim of the work presented here is to demonstrate in one device the iSHE detection combined with an electrical spin injection and manipulation. We use a 3D GaAs channel for which efficient electrical spin injection from Fe Schottky contacts has been demonstrated in previous works. In order to experimentally separate the strong ordinary Hall effect signal from the iSHE in the semiconductor channel we developed epitaxial ultrathin-Fe/GaAs contacts allowing for Hanle spin-precession measurements in applied in-plane magnetic fields. Electrical injection and detection is combined in our transistor structure with electrically manipulated spin distribution and spin current which, unlike the previously utilized electrical manipulations of the spin-orbit field or ballistic spin transit time, is well suited for the diffusive 3D GaAs spin channel. The magnitudes and external field dependencies of the measured signals are quantitatively analyzed using simultaneous spin detection by the non-local spin valve effect and modeled by solving the drift-diffusion and Hall-cross response equations for the parameters of the studied microstructure. △ Less

Submitted 4 February, 2012; originally announced February 2012.

Comments: 29 pages, 11 figures