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Altermagnetism imaged and controlled down to the nanoscale
Authors:
O. J. Amin,
A. Dal Din,
E. Golias,
Y. Niu,
A. Zakharov,
S. C. Fromage,
C. J. B. Fields,
S. L. Heywood,
R. B. Cousins,
J. Krempasky,
J. H. Dil,
D. Kriegner,
B. Kiraly,
R. P. Campion,
A. W. Rushforth,
K. W. Edmonds,
S. S. Dhesi,
L. Šmejkal,
T. Jungwirth,
P. Wadley
Abstract:
Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net-magnetization also imposes severe limitations on compatibility with other prominen…
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Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net-magnetization also imposes severe limitations on compatibility with other prominent phases ranging from superconductors to topological insulators, as well as on spintronic device scalability. Recently, altermagnetism has been proposed as a solution to this restriction, since it shares the enabling $\cal{T}$-symmetry breaking characteristic of ferromagnetism, combined with the antiferromagnetic-like vanishing net-magnetization. To date, altermagnetic ordering has been inferred from spatially averaged probes. Here, we demonstrate nanoscale imaging and control of altermagnetic ordering ranging from nanoscale vortices to domain walls to microscale single-domain states in MnTe. We combine the $\cal{T}$-symmetry breaking sensitivity of X-ray magnetic circular dichroism with magnetic linear dichroism and photoemission electron microscopy, to achieve detailed imaging of the local altermagnetic ordering vector. A rich variety of spin configurations can be imposed using microstructure patterning or thermal cycling in magnetic fields. The demonstrated detection and control of altermagnetism paves the way for future research ranging from ultra-scalable digital and neuromorphic spintronic devices, to the interplay of altermagnetism with non-dissipative superconducting or topological phases.
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Submitted 3 May, 2024;
originally announced May 2024.
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Thermally Stable Peltier Controlled Vacuum Chamber for Electrical Transport Measurements
Authors:
S. F. Poole,
O. J. Amin,
A. Solomon,
L. X. Barton,
R. P. Campion K. W. Edmonds,
P. Wadley
Abstract:
The design, manufacture and characterisation of an inexpensive, temperature controlled vacuum chamber with millikelvin stability for electrical transport measurements at and near room temperature is reported. A commercially available Peltier device and high-precision temperature controller are used to actively heat and cool the sample space. The system was designed to minimise thermal fluctuations…
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The design, manufacture and characterisation of an inexpensive, temperature controlled vacuum chamber with millikelvin stability for electrical transport measurements at and near room temperature is reported. A commercially available Peltier device and high-precision temperature controller are used to actively heat and cool the sample space. The system was designed to minimise thermal fluctuations in spintronic and semiconductor transport measurements but the general principle is relevant to a wide range of electrical measurement applications. The main issues overcome are the mounting of a sample with a path of high thermal conductivity through to the Peltier device and the heat-sinking of said Peltier device inside of a vacuum. A copper slug is used as the mount for a sample and a large copper block is used as a thermal feedthrough before a passive heatsink is used to cool this block. The Peltier device provides 20 W of heating and cooling power achieving a maximum range of 30 K below and 40 K above the ambient temperature. The temperature stability is within 5 mK at all set points with even better performance above ambient temperature. A vacuum pressure of 1e-8 hPa is achievable. As a demonstration, we present experimental results from current-induced electrical switching of a CuMnAs thin film. Transport measurements with and without the Peltier control emphasise the importance of a constant temperature in these applications. The thermal lag between the sample space measurement and the sample itself is observed through magnetoresistance values measured during a temperature sweep.
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Submitted 6 March, 2024;
originally announced March 2024.
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X-ray Magnetic Circular Dichroism in Altermagnetic $α$-MnTe
Authors:
A. Hariki,
A. Dal Din,
O. J. Amin,
T. Yamaguchi,
A. Badura,
D. Kriegner,
K. W. Edmonds,
R. P. Campion,
P. Wadley,
D. Backes,
L. S. I. Veiga,
S. S. Dhesi,
G. Springholz,
L. Šmejkal,
K. Výborný,
T. Jungwirth,
J. Kuneš
Abstract:
Altermagnetism is a recently identified magnetic symmetry class combining characteristics of conventional collinear ferromagnets and antiferromagnets, that were regarded as mutually exclusive, and enabling phenomena and functionalities unparalleled in either of the two traditional elementary magnetic classes. In this work we use symmetry and ab initio theory to explore X-ray magnetic circular dich…
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Altermagnetism is a recently identified magnetic symmetry class combining characteristics of conventional collinear ferromagnets and antiferromagnets, that were regarded as mutually exclusive, and enabling phenomena and functionalities unparalleled in either of the two traditional elementary magnetic classes. In this work we use symmetry and ab initio theory to explore X-ray magnetic circular dichroism (XMCD) in the altermagnetic class. Our results highlight the distinct phenomenology in altermagnets of this time-reversal symmetry breaking response, and its potential utility for element-specific spectroscopy and microscopy in altermagnets. As a representative material for our XMCD study we choose $α$-MnTe with the compensated antiparallel magnetic order in which an anomalous Hall effect has been already demonstrated both in theory and experiment. The predicted magnitude of XMCD lies well within the resolution of existing experimental techniques.
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Submitted 1 February, 2024; v1 submitted 5 May, 2023;
originally announced May 2023.
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Magnetic domain engineering in antiferromagnetic CuMnAs and Mn$_2$Au devices
Authors:
Sonka Reimers,
Olena Gomonay,
Oliver J. Amin,
Filip Krizek,
Luke X. Barton Yaryna Lytvynenko,
Stuart Poole,
Richard P. Campion,
Vit Novák,
Francesco Maccherozzi,
Dina Carbone,
Alexander Björling,
Yuran Niu,
Evangelos Golias,
Dominik Kriegner,
Jairo Sinova,
Mathias Kläui,
Martin Jourdan,
Sarnjeet S. Dhesi,
Kevin W. Edmonds,
Peter Wadley
Abstract:
Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here,…
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Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the non-trivial interaction of magnetostriction, substrate clam** and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances, and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will pave the way towards realizing truly functional antiferromagnetic devices.
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Submitted 17 April, 2023; v1 submitted 19 February, 2023;
originally announced February 2023.
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Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature
Authors:
O. J. Amin,
S. F. Poole,
S. Reimers,
L. X. Barton,
F. Maccherozzi,
S. S. Dhesi,
V. Novák,
F. Křížek,
J. S. Chauhan,
R. P. Campion,
A. W. Rushforth,
T. Jungwirth,
O. A. Tretiakov,
K. W. Edmonds,
P. Wadley
Abstract:
Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of the…
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Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of these textures, which have gained significant attention because of their potential for terahertz dynamics, deflection free motion, and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high density, high speed magnetic memory devices.
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Submitted 1 July, 2022;
originally announced July 2022.
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Defect-driven antiferromagnetic domain walls in CuMnAs films
Authors:
Sonka Reimers,
Dominik Kriegner,
Olena Gomonay,
Dina Carbone,
Filip Krizek,
Vit Novak,
Richard P. Campion,
Francesco Maccherozzi,
Alexander Bjorling,
Oliver J. Amin,
Luke X. Barton,
Stuart F. Poole,
Khalid A. Omari,
Jan Michalicka,
Ondrej Man,
Jairo Sinova,
Tomas Jungwirth,
Peter Wadley,
Sarnjeet S. Dhesi,
Kevin W. Edmonds
Abstract:
Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microsco…
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Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.
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Submitted 7 October, 2021;
originally announced October 2021.
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Atomically sharp domain walls in an antiferromagnet
Authors:
Filip Krizek,
Sonka Reimers,
Zdeněk Kašpar,
Alberto Marmodoro,
Jan Michalička,
Ondřej Man,
Alexander Edstrom,
Oliver J. Amin,
Kevin W. Edmonds,
Richard P. Campion,
Francesco Maccherozzi,
Sarnjeet S. Dnes,
Jan Zubáč,
Jakub Železný,
Karel Výborný,
Kamil Olejník,
Vít Novák,
Jan Rusz,
Juan C. Idrobo,
Peter Wadley,
Tomas Jungwirth
Abstract:
The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic d…
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The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets.
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Submitted 1 December, 2020;
originally announced December 2020.
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Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
Authors:
M. Wang,
C. Andrews,
S. Reimers,
O. J. Amin,
P. Wadley,
R. P. Campion,
S. F. Poole,
J. Felton,
K. W. Edmonds,
B. L. Gallagher,
A. W. Rushforth,
O. Makarovsky,
K. Gas,
M. Sawicki,
D. Kriegner,
J. Zubac,
K. Olejnik,
V. Novak,
T. Jungwirth,
M. Shahrokhvand,
U. Zeitler,
S. S. Dhesi,
F. Maccherozzi
Abstract:
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a b…
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Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields.
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Submitted 21 June, 2021; v1 submitted 27 November, 2019;
originally announced November 2019.
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Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses
Authors:
Zdeněk Kašpar,
Miloslav Surýnek,
Jan Zubáč,
Filip Krizek,
Vít Novák,
Richard P. Campion,
Martin S. Wörnle,
Pietro Gambardella,
Xavier Marti,
Petr Němec,
K. W. Edmonds,
S. Reimers,
O. J. Amin,
F. Maccherozzi,
S. S. Dhesi,
Peter Wadley,
Jörg Wunderlich,
Kamil Olejník,
Tomáš Jungwirth
Abstract:
Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets,…
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Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets, the readout magnetoresistivity signals in simple antiferromagnetic films have been weak and the extension of the electrical reorientation mechanism to optics has not been achieved. Here we report reversible and reproducible quenching of an antiferromagnetic CuMnAs film by either electrical or ultrashort optical pulses into nano-fragmented domain states. The resulting resistivity changes approach 20\% at room temperature, which is comparable to the giant magnetoresistance ratios in ferromagnetic multilayers. We also obtain a signal readout by optical reflectivity. The analog time-dependent switching and relaxation characteristics of our devices can mimic functionality of spiking neural network components.
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Submitted 24 June, 2021; v1 submitted 19 September, 2019;
originally announced September 2019.
