Showing 1–50 of 96 results for author: Amand, T

Ab initio quantum approach to electron-hole exchange for semiconductors hosting Wannier excitons

Authors: Monique Combescot, Thierry Amand, Shiue-Yuan Shiau

Abstract: We propose a quantum approach to "electron-hole exchange", better named electron-hole pair exchange, that makes use of the second quantization formalism to describe the problem in terms of Bloch-state electron operators. This approach renders transparent the fact that such singular effect comes from interband Coulomb processes. We first show that, due to the sign change when turning from valence-e… ▽ More We propose a quantum approach to "electron-hole exchange", better named electron-hole pair exchange, that makes use of the second quantization formalism to describe the problem in terms of Bloch-state electron operators. This approach renders transparent the fact that such singular effect comes from interband Coulomb processes. We first show that, due to the sign change when turning from valence-electron destruction operator to hole creation operator, the interband Coulomb interaction only acts on spin-singlet electron-hole pairs, just like the interband electron-photon interaction, thereby making these spin-singlet pairs optically bright. We then show that when written in terms of reciprocal lattice vectors ${\bf G}_m$, the singularity of the interband Coulomb scattering in the small wave-vector transfer limit entirely comes from the ${\bf G}_m = 0$ term, which renders its singular behavior easy to calculate. Comparison with the usual real-space formulation in which the singularity appears through a sum of "long-range processes" over all ${\bf R}\not= 0$ lattice vectors once more proves that periodic systems are easier to handle in terms of reciprocal vectors ${\bf G}_m$ than in terms of lattice vectors $\bf R$. Well-accepted consequences of the electron-hole exchange on excitons and polaritons are reconsidered and refuted for different major reasons. △ Less

Submitted 18 August, 2023; originally announced August 2023.

Comments: 15 pages, 8 figures

Journal ref: Physical Review B 107, 115206 (2023)

Control of the Bright-Dark Exciton Splitting using Lamb Shift in a 2D Semiconductor

Authors: L. Ren, C. Robert, M. M. Glazov, M. A. Semina, T. Amand, L. Lombez, D. Lagarde, T. Taniguchi, K. Watanabe, X. Marie

Abstract: We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $Δ$ between the bright and dark exciton has been measured by photoluminescence spectroscopy. We demonstrate that $Δ$ can be tuned by a few meV, as a result of a significant… ▽ More We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $Δ$ between the bright and dark exciton has been measured by photoluminescence spectroscopy. We demonstrate that $Δ$ can be tuned by a few meV, as a result of a significant Lamb shift of the optically active exciton which arises from emission and absorption of virtual photons triggered by the vacuum fluctuations of the electromagnetic field. We also measured strong variations of the bright exciton radiative linewidth, as a result of the Purcell effect. All these experimental results illustrate the strong sensitivity of the excitons to local vacuum field. We found a very good agreement with a model that demonstrates the equivalence, for our system, of a classical electrodynamical transfer matrix formalism and quantum-electrodynamical approach. The bright-dark splitting control demonstrated here should apply to any semiconductor structures. △ Less

Submitted 31 March, 2023; originally announced March 2023.

Non-linear diffusion of negatively charged excitons in WSe2 monolayer

Authors: D. Beret, L. Ren, C. Robert, L. Foussat, P. Renucci, D. Lagarde, A. Balocchi, T. Amand, B. Urbaszek, K. Watanabe, T. Taniguchi, X. Marie, L. Lombez

Abstract: We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (interv… ▽ More We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (intervalley and intravalley trion) as well as the dark trion. The time evolution allows us to identify the interplay of different excitonic species: the trionic species appear after the neutral excitonic ones, consistent with a bimolecular formation mechanism. Using the experimental observations, we propose a phenomenological model suggesting the coexistence of two populations: a first one exhibiting a fast and efficient diffusion mechanism and a second one with a slower dynamics and a less efficient diffusion process. These two contributions could be attributed to hot and cold trion populations. △ Less

Submitted 1 August, 2022; originally announced August 2022.

Valley polarization fluctuations, bistability, and switching in two-dimensional semiconductors

Authors: M. A. Semina, M. M. Glazov, C. Robert, L. Lombez, T. Amand, X. Marie

Abstract: We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton interactions. We address temporal dynamics of valley polarized excitons and study the steady states of the polarized exciton gas. We demonstrate bistability of t… ▽ More We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton interactions. We address temporal dynamics of valley polarized excitons and study the steady states of the polarized exciton gas. We demonstrate bistability of the valley polarization where two steady states with low and high valley polarization are formed. We study the effects of fluctuations and noise in such system. We evaluate valley polarization autocorrelation functions and demonstrate that for a high-polarization regime the fluctuations are characterized by high amplitude and long relaxation time. We study the switching between the low- and high-valley polarized states caused by the noise in the system and demonstrate that the state with high valley polarization is preferential in a wide range of pum** rates. △ Less

Submitted 28 June, 2022; v1 submitted 10 April, 2022; originally announced April 2022.

Comments: 11 pages, 6 figures

Machine learning assisted GaAsN circular polarimeter

Authors: A. Aguirre-Perez, R. S. Joshya, H. Carrère, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAs$_x$N$_{1-x}$ circular polarimeter with the intensity, degree of circular polarization and handedness of an incident light beam. Specifically, we employ a multimodal logistic regression to discriminate the handedness of light and a 6-layer neural network to establish… ▽ More We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAs$_x$N$_{1-x}$ circular polarimeter with the intensity, degree of circular polarization and handedness of an incident light beam. Specifically, we employ a multimodal logistic regression to discriminate the handedness of light and a 6-layer neural network to establish the relationship between the input voltages, the intensity and degree of circular polarization. We have developed a particular neural network training strategy that substantially improves the accuracy of the device. The algorithm was trained and tested on theoretically generated photoconductivity and on photoluminescence experimental results. Even for a small training experimental dataset (70 instances), it is shown that the proposed algorithm correctly predicts linear, right and left circularly polarized light misclassifying less than $1.5\%$ of the cases and attains an accuracy larger than $97\%$ in the vast majority of the predictions ($92\%$) for intensity and degree of circular polarization. These numbers are significantly improved for the larger theoretically generated datasets (4851 instances). The algorithm is versatile enough that it can be easily adjusted to other device configurations where a map needs to be established between the input parameters and the device response. Training and testing data files as well as the algorithm are provided as supplementary material. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Comments: 20 pages, 13 figures

Second harmonic generation control in twisted bilayers of transition metal dichalcogenides

Authors: Ioannis Paradisanos, Andres Manuel Saiz Raven, Thierry Amand, Cedric Robert, Pierre Renucci, Kenji Watanabe, Takashi Taniguchi, Iann C. Gerber, Xavier Marie, Bernhard Urbaszek

Abstract: The twist angle in transition metal dichalcogenide (TMD) heterobilayers is a compelling degree of freedom that determines electron correlations and the period of lateral confinement of moiré excitons. Here we perform polarization-resolved second harmonic generation (SHG) spectroscopy of MoS2/WSe2 heterostructures. We demonstrate that by choosing suitable laser energies the twist angle between two… ▽ More The twist angle in transition metal dichalcogenide (TMD) heterobilayers is a compelling degree of freedom that determines electron correlations and the period of lateral confinement of moiré excitons. Here we perform polarization-resolved second harmonic generation (SHG) spectroscopy of MoS2/WSe2 heterostructures. We demonstrate that by choosing suitable laser energies the twist angle between two monolayers can be measured directly on the assembled heterostructure. We show that the amplitude and polarization of the SHG signal from the heterostructure are determined by the twist angle between the layers and exciton resonances at the SH energy. For heterostructures with close to zero twist angle, we observe changes of exciton resonance energies and the appearance of new resonances in the linear and non-linear susceptibilities. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Comments: main text and supplement

Journal ref: Physical Review B 105, 115420 (2022)

Spin/Valley pum** of resident electrons in WSe2 and WS2 monolayers

Authors: Cedric Robert, Sangjun Park, Fabian Cadiz, Laurent Lombez, Lei Ren, Hans Tornatzky, Alistair Rowe, Daniel Paget, Fausto Sirotti, Min Yang, Dinh Van Tuan, Takashi Taniguchi, Bernhard Urbaszek, Kenji Watanabe, Thierry Amand, Hanan Dery, Xavier Marie

Abstract: Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monola… ▽ More Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monolayers. We observe that, using a continuous wave laser and appropriate do** and excitation densities, negative trion doublet lines exhibit circular polarization of opposite sign and the photoluminescence intensity of the triplet trion is more than four times larger with circular excitation than with linear excitation. We interpret our results as a consequence of a large dynamic polarization of resident electrons using circular light. △ Less

Submitted 11 May, 2021; originally announced May 2021.

Chiral photodetector based on GaAsN

Authors: R. S. Joshya, H. Carrère, V. G. Ibarra-Sierra, J. C. Sandoval-Santana, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Kunold, A. Balocchi

Abstract: The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors based on III-V or IV-VI semiconductors, being naturally non-chiral. The prior polarization analysis of the light by a series of often moving optical ele… ▽ More The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors based on III-V or IV-VI semiconductors, being naturally non-chiral. The prior polarization analysis of the light by a series of often moving optical elements is necessary before light is sent to the detector. A method is here presented to effectively give to the conventional dilute nitride GaAs-based semiconductor epilayer a chiral photoconductivity in paramagnetic-defect-engineered samples. The detection scheme relies on the giant spin-dependent recombination of conduction electrons and the accompanying spin polarization of the engineered defects to control the conduction band population via the electrons' spin polarization. As the conduction electron spin polarization is, in turn, intimately linked to the excitation light polarization, the light polarization state can be determined by a simple conductivity measurement. This effectively gives the GaAsN epilayer a chiral photoconductivity capable of discriminating the handedness of an incident excitation light in addition to its intensity. This approach, removing the need of any optical elements in front of a non-chiral detector, could offer easier integration and miniaturisation. This new chiral photodetector could potentially operate in a spectral range from the visible to the infra-red using (In)(Al)GaAsN alloys or ion-implanted nitrogen-free III-V compounds. △ Less

Submitted 22 March, 2021; v1 submitted 26 February, 2021; originally announced February 2021.

Comments: 7 pages, 7 figures

Polarization sensitive photodectector based on GaAsN

Authors: V. G. Ibarra-Sierra, J. C. Sandoval-Santana, R. S. Joshya, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single shot. The device, being based on GaAsN, is easy to integrate into standard electronics and does not require bulky movable parts nor extra detectors. Its oper… ▽ More We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single shot. The device, being based on GaAsN, is easy to integrate into standard electronics and does not require bulky movable parts nor extra detectors. Its operation hinges mainly on two phenomena: the spin dependent capture of electrons and the hyperfine interaction between bound electrons and nuclei on Ga$^{2+}$ paramagnetic centers in GaAsN. The first phenomenon confers the device with sensitivity to the degree of circular polarization and the latter allows to discriminate the handedness of the incident light. △ Less

Submitted 19 February, 2021; originally announced February 2021.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. Applied 15, 064040 (2021)

Measurement of Conduction and Valence Bands g-factors in a Transition Metal Dichalcogenide Monolayer

Authors: Cedric Robert, Hanan Dery, Lei Ren, Dinh van Tuan, Emmanuel Courtade, Min Yang, Bernhard Urbaszek, Delphine Lagarde, Kenji Watanabe, Takashi Taniguchi, Thierry Amand, Xavier Marie

Abstract: The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely the separate contribution of the electron and hole g-factor, is inaccessible in most measurements. Here we present an original method that gives access to th… ▽ More The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely the separate contribution of the electron and hole g-factor, is inaccessible in most measurements. Here we present an original method that gives access to the respective contribution of the conduction and valence band to the measured Zeeman splitting. It exploits the optical selection rules of exciton complexes, in particular the ones involving inter-valley phonons, avoiding strong renormalization effects that compromise single particle g-factor determination in transport experiments. These studies yield a direct determination of single band g factors. We measure gc1= 0.86, gc2=3.84 for the bottom (top) conduction bands and gv=6.1 for the valence band of monolayer WSe2. These measurements are helpful for quantitative interpretation of optical and transport measurements performed in magnetic fields. In addition the measured g-factors are valuable input parameters for optimizing band structure calculations of these 2D materials. △ Less

Submitted 17 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. Lett. 126, 067403 (2021)

Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field

Authors: Fabian Cadiz, Delphine Lagarde, Bingshan Tao, Julien Frougier, Bo Xu, Henri Jaffrès, Zhanguo Wang, Xiufeng Han, Jean Marie George, Hélène Carrere, Andrea Balocchi, Thierry Amand, Xavier Marie, Bernhard Urbaszek, Yuan Lu, Pierre Renucci

Abstract: Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoF… ▽ More Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoFeB/MgO electrode, presenting perpendicular magnetic anisotropy (PMA). We observe a clear asymmetry of the photocurrent measured under respective right and left polarized light that follows the hysteresis of the magnetic layer. The amplitude of this asymmetry at zero magnetic field decreases with increasing temperatures and can be controlled with the bias. Polarization-resolved photoluminescence is detected in parallel while the device is operated as a photodetector. This demonstrates the multifunctional capabilities of the device and gives valuable insights into the spin relaxation of the electrons in the quantum dots. △ Less

Submitted 23 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Materials 4, 124603 (2020)

Optical properties of exciton in two-dimensional transition metal dichalcogenide nanobubbles

Authors: Adlen Smiri, Thierry Amand, Sihem Jaziri

Abstract: Strain in two-dimensional (2D) transition metal dichalcogenide (TMD) has led to localized states with exciting optical properties, in particular in view of designing one photon sources. The naturally formed of the MoS2 monolayer deposed on hBN substrate leads to a reduction of the bandgap in the strained region creating a nanobubble. The photogenerated particles are thus confined in the strain-ind… ▽ More Strain in two-dimensional (2D) transition metal dichalcogenide (TMD) has led to localized states with exciting optical properties, in particular in view of designing one photon sources. The naturally formed of the MoS2 monolayer deposed on hBN substrate leads to a reduction of the bandgap in the strained region creating a nanobubble. The photogenerated particles are thus confined in the strain-induced potential. Using numerical diagonalization, we simulate the spectra of the confined exciton states, their oscillator strengths and radiative lifetimes. We show that a single state of the confined exciton is optically active, which suggests that the MoS2/hBN nanobubble is a good candidate for the realisation of single-photon sources. Furthermore, the exciton binding energy, oscillator strength and radiative lifetime are enhanced due to the confinement effect. △ Less

Submitted 6 May, 2020; originally announced May 2020.

Comments: 16 pages, 8 figures

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

Authors: P. Barate, S. Liang, T. T. Zhang, J. Frougier, M. Vidal, P. Renucci, X. Devaux, B. Xu, H. Jaffrès, J. M. George, X. Marie, M. Hehn, S. Mangin, Y. Zheng, T. Amand, B. Tao, X. F. Han, Z. Wang, Y. Lu

Abstract: An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for t… ▽ More An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: Applied Physics Letters, 105, 012404 (2014)

Measurement of the Spin-Forbidden Dark Excitons in MoS2 and MoSe2 monolayers

Authors: C. Robert, B. Han, P. Kapuscinski, A. Delhomme, C. Faugeras, T. Amand, M. R. Molas, M. Bartos, K. Watanabe, T. Taniguchi, B. Urbaszek, M. Potemski, X. Marie

Abstract: Excitons with binding energies of a few hundreds of meV control the optical properties of transition metal dichalcogenide monolayers. Knowledge of the fine structure of these excitons is therefore essential to understand the optoelectronic properties of these 2D materials. Here we measure the exciton fine structure of MoS2 and MoSe2 monolayers encapsulated in boron nitride by magneto-photoluminesc… ▽ More Excitons with binding energies of a few hundreds of meV control the optical properties of transition metal dichalcogenide monolayers. Knowledge of the fine structure of these excitons is therefore essential to understand the optoelectronic properties of these 2D materials. Here we measure the exciton fine structure of MoS2 and MoSe2 monolayers encapsulated in boron nitride by magneto-photoluminescence spectroscopy in magnetic fields up to 30 T. The experiments performed in transverse magnetic field reveal a brightening of the spin-forbidden dark excitons in MoS2 monolayer: we find that the dark excitons appear at 14 meV below the bright ones. Measurements performed in tilted magnetic field provide a conceivable description of the neutral exciton fine structure. The experimental results are in agreement with a model taking into account the effect of the exchange interaction on both the bright and dark exciton states as well as the interaction with the magnetic field. △ Less

Submitted 10 February, 2020; originally announced February 2020.

Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga$^{2+}$ centers

Authors: J. C. Sandoval-Santana, V. G. Ibarra-Sierra, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to m… ▽ More Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to most previously presented models. Primarily, these errors manifest themselves as major disagreements with the experimental observations of two key characteristics of this phenomenon: the effective Overhauser-like magnetic field and the width of the photoluminescence Lorentzian-like curves as a function of the illumination power. These features are not only essential to understand the spin dependent recombination in GaAsN, but are also key to the design of novel spintronic devices. Here we demonstrate that the particular structure of the electron capture expressions introduces spurious electron-nucleus correlations that artificially alter the balance between the hyperfine and the Zeeman contributions. This imbalance strongly distorts the effective magnetic field and width characteristics. In this work we propose an alternative recombination mechanism that preserves the electron-nucleus correlations and, at the same time, keeps the essential properties of the spin selective capture of electrons. This mechanism yields a significant improvement to the agreement between experimental and theoretical results. In particular, our model gives results in very good accord with the experimental effective Overhauser-like magnetic field and width data, and with the degree of circular polarization under oblique magnetic fields. △ Less

Submitted 8 October, 2019; originally announced October 2019.

Comments: 13 pages, 6 figures

Journal ref: Phys. Rev. B 101, 075201 (2020)

Intervalley Polaron in Atomically Thin Transition Metal Dichalcogenides

Authors: M. M. Glazov, M. A. Semina, C. Robert, B. Urbaszek, T. Amand, X. Marie

Abstract: We study theoretically intervalley coupling in transition-metal dichalcogenide monolayers due to electron interaction with short-wavelength phonons. We demonstrate that this intervalley polaron coupling results in (i) a renormalization of the conduction band spin splitting and (ii) an increase of the electron effective masses. We also calculate the renormalization of the cyclotron energy and the L… ▽ More We study theoretically intervalley coupling in transition-metal dichalcogenide monolayers due to electron interaction with short-wavelength phonons. We demonstrate that this intervalley polaron coupling results in (i) a renormalization of the conduction band spin splitting and (ii) an increase of the electron effective masses. We also calculate the renormalization of the cyclotron energy and the Landau level splitting in the presence of an external magnetic field. An inter-valley magneto-phonon resonance is uncovered. Similar, but much weaker effects are also expected for the valence band holes. These results might help to resolve the discrepancy between ab initio values of the electron effective masses and the ones deduced from magneto-transport measurements. △ Less

Submitted 18 June, 2019; v1 submitted 4 April, 2019; originally announced April 2019.

Comments: 7 pages, 3 figures + supplement 4 pages

Journal ref: Phys. Rev. B 100, 041301 (2019)

Control of the Exciton Radiative Lifetime in van der Waals Heterostructures

Authors: H. H. Fang, B. Han, C. Robert, M. A. Semina, D. Lagarde, E. Courtade, T. Taniguchi, K. Watanabe, T. Amand, B. Urbaszek, M. M. Glazov, X. Marie

Abstract: Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures… ▽ More Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures can be tailored by a simple change of the hBN encapsulation layer thickness as a consequence of the Purcell effect. The time-resolved photoluminescence measurements together with cw reflectivity and photoluminescence experiments show that the neutral exciton spontaneous emission time can be tuned by one order of magnitude depending on the thickness of the surrounding hBN layers. The inhibition of the radiative recombination can yield spontaneous emission time up to $10$~ps. These results are in very good agreement with the calculated recombination rate in the weak exciton-photon coupling regime. The analysis shows that we are also able to observe a sizeable enhancement of the exciton radiative decay rate. Understanding the role of these electrodynamical effects allow us to elucidate the complex dynamics of relaxation and recombination for both neutral and charged excitons. △ Less

Submitted 15 July, 2019; v1 submitted 2 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Lett. 123, 067401 (2019)

Exciton states in monolayer MoSe2 and MoTe2 probed by upconversion spectroscopy

Authors: B. Han, C. Robert, E. Courtade, M. Manca, S. Shree, T. Amand, P. Renucci, T. Taniguchi, K. Watanabe, X. Marie, L. E. Golub, M. M. Glazov, B. Urbaszek

Abstract: Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator… ▽ More Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator strength and strong inhomogeneous broadening. Here we show that encapsulation in hexagonal boron nitride results in emission line width of the A:1$s$ exciton below 1.5 meV and 3 meV in our MoSe$_2$ and MoTe$_2$ monolayer samples, respectively. This allows us to investigate the excited exciton states by photoluminescence upconversion spectroscopy for both monolayer materials. The excitation laser is tuned into resonance with the A:1$s$ transition and we observe emission of excited exciton states up to 200 meV above the laser energy. We demonstrate bias control of the efficiency of this non-linear optical process. At the origin of upconversion our model calculations suggest an exciton-exciton (Auger) scattering mechanism specific to TMD MLs involving an excited conduction band thus generating high energy excitons with small wave-vectors. The optical transitions are further investigated by white light reflectivity, photoluminescence excitation and resonant Raman scattering confirming their origin as excited excitonic states in monolayer thin semiconductors. △ Less

Submitted 11 May, 2018; originally announced May 2018.

Comments: 14 pages, 7 figures, main text and appendix

Journal ref: Phys. Rev. X 8, 031073 (2018)

Exciton-phonon coupling in MoSe2 monolayers

Authors: S. Shree, M. Semina, C. Robert, B. Han, T. Amand, A. Balocchi, M. Manca, E. Courtade, X. Marie, T. Taniguchi, K. Watanabe, M. M. Glazov, B. Urbaszek

Abstract: We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV at low temperatures makes it possible to observe high energy tails in absorption and emission extending over several meV, not masked by inhomogeneous… ▽ More We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV at low temperatures makes it possible to observe high energy tails in absorption and emission extending over several meV, not masked by inhomogeneous broadening. We develop an analytical theory of the exciton-phonon interaction accounting for the deformation potential induced by the longitudinal acoustic phonons, which plays an important role in exciton formation. The theory allows fitting absorption and emission spectra and permits estimating the deformation potential in MoSe2 monolayers. We underline the reasons why exciton-phonon coupling is much stronger in two-dimensional transition metal dichalcodenides as compared to conventional quantum well structures. The importance of exciton-phonon interactions is further highlighted by the observation of a multitude of Raman features in the photoluminescence excitation experiments. △ Less

Submitted 17 April, 2018; originally announced April 2018.

Comments: 12 pages, 5 figures

Journal ref: Phys. Rev. B 98, 035302 (2018)

Radiative lifetime of localized excitons in transition metal dichalcogenides

Authors: Sabrine Ayari, Adlen Smiri, Aida Hichri, Sihem Jaziri, Thierry Amand

Abstract: Disorder derived from defects or strain in monolayer TMDs can lead to a dramatic change in the physical behavior of the interband excitations, producing inhomogeneous spectral broadening and localization; leading to radiative lifetime increase. In this study, we have modeled the disorder in the surface of the sample through a randomized potential in monolayer WSe2. We show that this model allows u… ▽ More Disorder derived from defects or strain in monolayer TMDs can lead to a dramatic change in the physical behavior of the interband excitations, producing inhomogeneous spectral broadening and localization; leading to radiative lifetime increase. In this study, we have modeled the disorder in the surface of the sample through a randomized potential in monolayer WSe2. We show that this model allows us to simulate the spectra of localized exciton states as well as their radiative lifetime. In this context, we give an in depth study of the influence of the disorder potential parameters on the optical properties of these defects through energies, density of states, oscillator strengths, photoluminescence (PL) spectroscopy and radiative lifetime at low temperature (4K). We demonstrate that localized excitons have a longer emission time than free excitons, in the range of tens of picoseconds or more, and we show that it depends strongly on the disorder parameter and dielectric environment. Finally, in order to prove the validity of our model we compare it to available experimental results of the literature. △ Less

Submitted 14 March, 2018; originally announced March 2018.

Comments: arXiv admin note: text overlap with arXiv:1409.3996 by other authors

Journal ref: Phys. Rev. B 98, 205430 (2018)

Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field

Authors: F. Cadiz, A. Djeffal, D. Lagarde, A. Balocchi, B. S. Tao, B. Xu, S. H. Liang, M. Stoffel, X. Devaux, H. Jaffres, J. M. George, M. Hehn, S. Mangin, H. Carrere, X. Marie, T. Amand, X. F. Han, Z. G. Wang, B. Urbaszek, Y. Lu, P. Renucci

Abstract: The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device wi… ▽ More The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field. △ Less

Submitted 12 March, 2018; originally announced March 2018.

Comments: initial version, final version to appear in ACS Nano Letters

Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure

Authors: F. Cadiz, C. Robert, E. Courtade, M. Manca, L. Martinelli, T. Taniguchi, K. Watanabe, T. Amand, A. C. H. Rowe, D. Paget, B. Urbaszek, X. Marie

Abstract: We have combined spatially-resolved steady-state micro-photoluminescence ($μ$PL) with time-resolved photoluminescence (TRPL) to investigate the exciton diffusion in a WSe$_2$ monolayer encapsulated with hexagonal boron nitride (hBN). At 300 K, we extract an exciton diffusion length $L_X= 0.36\pm 0.02 \; μ$m and an exciton diffusion coefficient of $D_X=14.5 \pm 2\;\mbox{cm}^2$/s. This represents a… ▽ More We have combined spatially-resolved steady-state micro-photoluminescence ($μ$PL) with time-resolved photoluminescence (TRPL) to investigate the exciton diffusion in a WSe$_2$ monolayer encapsulated with hexagonal boron nitride (hBN). At 300 K, we extract an exciton diffusion length $L_X= 0.36\pm 0.02 \; μ$m and an exciton diffusion coefficient of $D_X=14.5 \pm 2\;\mbox{cm}^2$/s. This represents a nearly 10-fold increase in the effective mobility of excitons with respect to several previously reported values on nonencapsulated samples. At cryogenic temperatures, the high optical quality of these samples has allowed us to discriminate the diffusion of the different exciton species : bright and dark neutral excitons, as well as charged excitons. The longer lifetime of dark neutral excitons yields a larger diffusion length of $L_{X^D}=1.5\pm 0.02 \;μ$m. △ Less

Submitted 26 February, 2018; originally announced February 2018.

Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

Authors: M. Manca, G. Wang, T. Kuroda, S. Shree, A. Balocchi, P. Renucci, X. Marie, M. V. Durnev, M. M. Glazov, K. Sakoda, T. Mano, T. Amand, B. Urbaszek

Abstract: In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear p… ▽ More In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X$^+$ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage V$_g$. Variation of $Δ$V$_g$ of the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 $μ$eV (-22 %) to +10 $μ$eV (+7 %), although the X$^+$ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X$^+$ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X$^+$ lifetime which is of the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments. △ Less

Submitted 27 March, 2018; v1 submitted 2 February, 2018; originally announced February 2018.

Comments: 5 pages, 2 figures

Journal ref: Appl. Phys. Lett. 112, 142103 (2018)

Optical spectroscopy of excited exciton states in MoS2 monolayers in van der Waals heterostructures

Authors: C. Robert, M. A. Semina, F. Cadiz, M. Manca, E. Courtade, T. Taniguchi, K. Watanabe, H. Cai, S. Tongay, B. Lassagne, P. Renucci, T. Amand, X. Marie, M. M. Glazov, B. Urbaszek

Abstract: The optical properties of MoS2 monolayers are dominated by excitons, but for spectrally broad optical transitions in monolayers exfoliated directly onto SiO2 substrates detailed information on excited exciton states is inaccessible. Encapsulation in hexagonal boron nitride (hBN) allows approaching the homogenous exciton linewidth, but interferences in the van der Waals heterostructures make direct… ▽ More The optical properties of MoS2 monolayers are dominated by excitons, but for spectrally broad optical transitions in monolayers exfoliated directly onto SiO2 substrates detailed information on excited exciton states is inaccessible. Encapsulation in hexagonal boron nitride (hBN) allows approaching the homogenous exciton linewidth, but interferences in the van der Waals heterostructures make direct comparison between transitions in optical spectra with different oscillator strength more challenging. Here we reveal in reflectivity and in photoluminescence excitation spectroscopy the presence of excited states of the A-exciton in MoS2 monolayers encapsulated in hBN layers of calibrated thickness, allowing to extrapolate an exciton binding energy of about 220 meV. We theoretically reproduce the energy separations and oscillator strengths measured in reflectivity by combining the exciton resonances calculated for a screened two-dimensional Coulomb potential with transfer matrix calculations of the reflectivity for the van der Waals structure. Our analysis shows a very different evolution of the exciton oscillator strength with principal quantum number for the screened Coulomb potential as compared to the ideal two-dimensional hydrogen model. △ Less

Submitted 5 December, 2017; originally announced December 2017.

Comments: 7 pages, 3 figures, supplement

Journal ref: Phys. Rev. Materials 2, 011001 (2018)

Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon

Authors: Sebastiano De Cesari, Andrea Balocchi, Elisa Vitiello, Pedram Jahandar, Emanuele Grilli, Thierry Amand, Xavier Marie, Maksym Myronov, Fabio Pezzoli

Abstract: Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between Zeeman-split levels under an external magnetic field. Our optical experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifeti… ▽ More Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between Zeeman-split levels under an external magnetic field. Our optical experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that approaches the ns regime at room temperature. Besides important insights into nonradiative recombination pathways, our findings disclose a rich spin physics in novel epitaxial structures directly grown on a conventional Si substrate. This introduces a viable route towards the synergic enrichment of the group IV semiconductor toolbox with advanced spintronics and photonic capabilities. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 99, 035202 (2019)

Fine Structure and Lifetime of Dark Excitons in Transition Metal Dichalcogenide Monolayers

Authors: Cedric Robert, Thierry Amand, Fabian Cadiz, Delphine Lagarde, Emmanuel Courtade, Marco Manca, Takashi Taniguchi, Kenji Watanabe, Bernhard Urbaszek, Xavier Marie

Abstract: The intricate interplay between optically dark and bright excitons governs the light-matter interaction in transition metal dichalcogenide monolayers. We have performed a detailed investigation of the "spin-forbidden" dark excitons in WSe2 monolayers by optical spectroscopy in an out-of-plane magnetic field Bz. In agreement with the theoretical predictions deduced from group theory analysis, magne… ▽ More The intricate interplay between optically dark and bright excitons governs the light-matter interaction in transition metal dichalcogenide monolayers. We have performed a detailed investigation of the "spin-forbidden" dark excitons in WSe2 monolayers by optical spectroscopy in an out-of-plane magnetic field Bz. In agreement with the theoretical predictions deduced from group theory analysis, magneto-photoluminescence experiments reveal a zero field splitting $δ=0.6 \pm 0.1$ meV between two dark exciton states. The low energy state being strictly dipole forbidden (perfectly dark) at Bz=0 while the upper state is partially coupled to light with z polarization ("grey" exciton). The first determination of the dark neutral exciton lifetime $τ_D$ in a transition metal dichalcogenide monolayer is obtained by time-resolved photoluminescence. We measure $τ_D \sim 110 \pm 10$ ps for the grey exciton state, i.e. two orders of magnitude longer than the radiative lifetime of the bright neutral exciton at T=12 K. △ Less

Submitted 9 May, 2018; v1 submitted 17 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. B 96, 155423 (2017)

Excitons in atomically thin transition metal dichalcogenides

Authors: Gang Wang, Alexey Chernikov, Mikhail M. Glazov, Tony F. Heinz, Xavier Marie, Thierry Amand, Bernhard Urbaszek

Abstract: Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal dichalcogenides is an especially promising platform for fundamental studies of two-dimensional (2D) systems, with potential applications in optoelectron… ▽ More Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal dichalcogenides is an especially promising platform for fundamental studies of two-dimensional (2D) systems, with potential applications in optoelectronics and valleytronics due to their direct band gap in the monolayer limit and highly efficient light-matter coupling. A crystal lattice with broken inversion symmetry combined with strong spin-orbit interactions leads to a unique combination of the spin and valley degrees of freedom. In addition, the 2D character of the monolayers and weak dielectric screening from the environment yield a significant enhancement of the Coulomb interaction. The resulting formation of bound electron-hole pairs, or excitons, dominates the optical and spin properties of the material. Here we review recent progress in our understanding of the excitonic properties in monolayer TMDs and lay out future challenges. We focus on the consequences of the strong direct and exchange Coulomb interaction, discuss exciton-light interaction and effects of other carriers and excitons on electron-hole pairs in TMDs. Finally, the impact on valley polarization is described and the tuning of the energies and polarization observed in applied electric and magnetic fields is summarized. △ Less

Submitted 10 November, 2017; v1 submitted 18 July, 2017; originally announced July 2017.

Comments: 28 pages, 8 figures, with updated references and corrected typos [Reviews of Modern Physics - in press]

Journal ref: Rev. Mod. Phys. 90, 21001 (2018)

Charged excitons in monolayer WSe$_2$: experiment and theory

Authors: E. Courtade, M. Semina, M. Manca, M. M. Glazov, C. Robert, F. Cadiz, G. Wang, T. Taniguchi, K. Watanabe, M. Pierre, W. Escoffier, E. L. Ivchenko, P. Renucci, X. Marie, T. Amand, B. Urbaszek

Abstract: Charged excitons, or X$^{\pm}$-trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X$^0$ they dominate the emission spectrum at low and elevated temperatures. We use charge tunable devices based on WSe$_2$ monolayers encapsulated in hexagonal boron nitride, to investigate the difference in binding energy between X… ▽ More Charged excitons, or X$^{\pm}$-trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X$^0$ they dominate the emission spectrum at low and elevated temperatures. We use charge tunable devices based on WSe$_2$ monolayers encapsulated in hexagonal boron nitride, to investigate the difference in binding energy between X$^+$ and X$^-$ and the X$^-$ fine structure. We find in the charge neutral regime, the X$^0$ emission accompanied at lower energy by a strong peak close to the longitudinal optical (LO) phonon energy. This peak is absent in reflectivity measurements, where only the X$^0$ and an excited state of the X$^0$ are visible. In the $n$-doped regime, we find a closer correspondence between emission and reflectivity as the trion transition with a well-resolved fine-structure splitting of 6~meV for X$^-$ is observed. We present a symmetry analysis of the different X$^+$ and X$^-$ trion states and results of the binding energy calculations. We compare the trion binding energy for the $n$-and $p$-doped regimes with our model calculations for low carrier concentrations. We demonstrate that the splitting between the X$^+$ and X$^-$ trions as well as the fine structure of the X$^-$ state can be related to the short-range Coulomb exchange interaction between the charge carriers. △ Less

Submitted 9 May, 2018; v1 submitted 5 May, 2017; originally announced May 2017.

Comments: 13 pages, 6 figures, 2 tables

Journal ref: Phys. Rev. B 96, 085302 (2017)

In-plane Propagation of Light in Transition Metal Dichalcogenide Monolayers: Optical Selection Rules

Authors: G. Wang, C. Robert, M. M. Glazov, F. Cadiz, E. Courtade, T. Amand, D. Lagarde, T. Taniguchi, K. Watanabe, B. Urbaszek, X. Marie

Abstract: The optical selection rules for inter-band transitions in WSe2, WS2 and MoSe2 transition metal dichalcogenide monolayers are investigated by polarization-resolved photoluminescence experiments with a signal collection from the sample edge. These measurements reveal a strong polarization-dependence of the emission lines. We see clear signatures of the emitted light with the electric field oriented… ▽ More The optical selection rules for inter-band transitions in WSe2, WS2 and MoSe2 transition metal dichalcogenide monolayers are investigated by polarization-resolved photoluminescence experiments with a signal collection from the sample edge. These measurements reveal a strong polarization-dependence of the emission lines. We see clear signatures of the emitted light with the electric field oriented perpendicular to the monolayer plane, corresponding to an inter-band optical transition forbidden at normal incidence used in standard optical spectroscopy measurements. The experimental results are in agreement with the optical selection rules deduced from group theory analysis, highlighting the key role played by the different symmetries of the conduction and valence bands split by the spin-orbit interaction. These studies yield a direct determination on the bright-dark exciton splitting, for which we measure 40 $\pm 1$ meV and 55 $\pm 2$ meV for WSe2 and WS2 monolayer, respectively. △ Less

Submitted 18 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. Lett. 119, 047401 (2017)

Electron-nuclear coherent spin oscillations probed by spin dependent recombination

Authors: S. Azaizia, H. Carrère, J. C. Sandoval-Santana, V. G. Ibarra-Sierra, V. K. Kalevich, E. L. Ivchenko, L. A. Bakaleinikov, X. Marie, T. Amand, A. Kunold, A. Balocchi

Abstract: We demonstrate the detection of coherent electron-nuclear spin oscillations related to the hyperfine interaction and revealed by the band-to-band photoluminescence (PL) in zero external magnetic field. On the base of a pump-probe PL experiment we measure, directly in the temporal domain, the hyperfine constant of an electron coupled to a gallium defect in GaAsN by tracing the dynamical behavior of… ▽ More We demonstrate the detection of coherent electron-nuclear spin oscillations related to the hyperfine interaction and revealed by the band-to-band photoluminescence (PL) in zero external magnetic field. On the base of a pump-probe PL experiment we measure, directly in the temporal domain, the hyperfine constant of an electron coupled to a gallium defect in GaAsN by tracing the dynamical behavior of the conduction electron spin-dependent recombination to the defect site. The hyperfine constants and the relative abundance of the nuclei isotopes involved can be determined without the need of electron spin resonance technique and in the absence of any magnetic field. Information on the nuclear and electron spin relaxation dam** parameters can also be estimated from the oscillations dam** and the long delay behavior. △ Less

Submitted 14 February, 2017; originally announced February 2017.

Journal ref: Phys. Rev. B 97, 155201 (2018)

Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics

Authors: F. Cadiz, E. Courtade, C. Robert, G. Wang, Y. Shen, H. Cai, T. Taniguchi, K. Watanabe, H. Carrere, D. Lagarde, M. Manca, T. Amand, P. Renucci, S. Tongay, X. Marie, B. Urbaszek

Abstract: The strong light matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics applications. But so far optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogenous and inhomogeneous contributions. This prevented in-depth studies, in contras… ▽ More The strong light matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics applications. But so far optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogenous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the better-characterized ML materials MoSe2 and WSe2. In this work we show that encapsulation of ML MoS2 in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T = 4K. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high quality samples. Among the new possibilities offered by the well-defined optical transitions we measure the homogeneous broadening induced by the interaction with phonons in temperature dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML. △ Less

Submitted 1 February, 2017; originally announced February 2017.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. X 7, 021026 (2017)

Enabling valley selective exciton scattering in monolayer WSe$_2$ through upconversion

Authors: M. Manca, M. M. Glazov, C. Robert, F. Cadiz, T. Taniguchi, K. Watanabe, E. Courtade, T. Amand, P. Renucci, X. Marie, G. Wang, B. Urbaszek

Abstract: Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects.… ▽ More Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects. But so far the bosonic character of exciton scattering processes remains largely unexplored in these two-dimensional (2D) materials. Here we show that scattering between B-excitons and A-excitons preferably happens within the same valley in momentum space. This leads to power dependent, negative polarization of the hot B-exciton emission. We use a selective upconversion technique for efficient generation of B-excitons in the presence of resonantly excited A-excitons at lower energy, we also observe the excited A-excitons state $2s$. Detuning of the continuous wave, low power laser excitation outside the A-exciton resonance (with a full width at half maximum of 4 meV) results in vanishing upconversion signal. △ Less

Submitted 20 January, 2017; originally announced January 2017.

Comments: main text: 8 pages, 4 figures; supplement: 4 pages, 5 figures

Journal ref: Nature Communications 8, 14927 (2017)

Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density

Authors: F. Cadiz, D. Lagarde, P. Renucci, D. Paget, T. Amand, H. Carrère, A. C. H. Rowe, S. Arscott

Abstract: Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (… ▽ More Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (A0X) complex. It is found that the spin lifetime is shorter for electrons that recombine through the e-A0 transition due to spin relaxation generated by the exchange scattering of free electrons with either trapped or free holes, whereas spin flip processes are less likely to occur once the electron forms with a free hole an exciton bound to a neutral acceptor. An increase of exci- tation power induces a cross-over to a regime where the bimolecular band-to-band (b-b) emission becomes more favorable due to screening of the electron-hole Coulomb interaction and ionization of excitonic complexes and free excitons. Then, the formation of excitons is no longer possible, the carrier recombination lifetime increases and the spin lifetime is found to decrease dramatically with concentration due to fast spin relaxation with free photoholes. In this high density regime, both the electrons that recombine through the e-A0 transition and through the b-b transition have the same spin relaxation time. △ Less

Submitted 22 November, 2016; originally announced November 2016.

Comments: 4 pages, 5 figures

Electron-nuclear spin dynamics of Ga$^{2+}$ paramagnetic centers probed by spin dependent recombination: A master equation approach

Authors: V. G. Ibarra-Sierra, J. C. Sandoval-Santana, S. Azaizia, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: Similar to nitrogen-vacancy centers in diamond and impurity atoms in silicon, interstitial gallium deep paramagnetic centers in GaAsN have been proven to have useful characteristics for the development of spintronic devices. Among other interesting properties, under circularly polarized light, gallium centers in GaAsN act as spin filters that dynamically polarize free and bound electrons reaching… ▽ More Similar to nitrogen-vacancy centers in diamond and impurity atoms in silicon, interstitial gallium deep paramagnetic centers in GaAsN have been proven to have useful characteristics for the development of spintronic devices. Among other interesting properties, under circularly polarized light, gallium centers in GaAsN act as spin filters that dynamically polarize free and bound electrons reaching record spin polarizations (100\%). Furthermore, the recent observation of the amplification of the spin filtering effect under a Faraday configuration magnetic field has suggested that the hyperfine interaction that couples bound electrons and nuclei permits the optical manipulation of its nuclear spin polarization. Even though the mechanisms behind the nuclear spin polarization in gallium centers are fairly well understood, the origin of nuclear spin relaxation and the formation of an Overhauser-like magnetic field remain elusive. In this work we develop a model based on the master equation approach to describe the evolution of electronic and nuclear spin polarizations of gallium centers interacting with free electrons and holes. Our results are in good agreement with existing experimental observations. In regard to the nuclear spin relaxation, the roles of nuclear dipolar and quadrupolar interactions are discussed. Our findings show that, besides the hyperfine interaction, the spin relaxation mechanisms are key to understand the amplification of the spin filtering effect and the appearance of the Overhauser-like magnetic field. Based on our model's results we propose an experimental protocol based on time resolved spectroscopy. It consists of a pump-probe photoluminescence scheme that would allow the detection and the tracing of the electron-nucleus flip-flops through time resolved PL measurements. △ Less

Submitted 13 November, 2016; originally announced November 2016.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. B 95, 195204 (2017)

Intrinsic exciton states mixing and non-linear optical properties in transition metal dichalcogenide monolayers

Authors: M. M. Glazov, L. E. Golub, G. Wang, X. Marie, T. Amand, B. Urbaszek

Abstract: Optical properties of transition metal dichalcogenides monolayers are controlled by the Wannier-Mott excitons forming a series of $1s$, $2s$, $2p$,... hydrogen-like states. We develop the theory of the excited excitonic states energy spectrum fine structure. We predict that $p$- and $s$-shell excitons are mixed due to the specific $D_{3h}$ point symmetry of the transition metal dichalcogenide mono… ▽ More Optical properties of transition metal dichalcogenides monolayers are controlled by the Wannier-Mott excitons forming a series of $1s$, $2s$, $2p$,... hydrogen-like states. We develop the theory of the excited excitonic states energy spectrum fine structure. We predict that $p$- and $s$-shell excitons are mixed due to the specific $D_{3h}$ point symmetry of the transition metal dichalcogenide monolayers. Hence, both $s$- and $p$-shell excitons are active in both single- and two-photon processes providing an efficient mechanism of second harmonic generation. The corresponding contribution to the nonlinear susceptibility is calculated. △ Less

Submitted 11 January, 2017; v1 submitted 21 October, 2016; originally announced October 2016.

Comments: 13 pages, 6 figures

Journal ref: Phys. Rev. B 95, 035311 (2017)

Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides

Authors: Fabian Cadiz, Cedric Robert, Gang Wang, Wilson Kong, Xi Fan, Mark Blei, Delphine Lagarde, Maxime Gay, Marco Manca, Takashi Taniguchi, Kenji Watanabe, Thierry Amand, Xavier Marie, Pierre Renucci, Sefaattin Tongay, Bernhard Urbaszek

Abstract: The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical… ▽ More The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced do** is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the $μ$W/$μ$m$^2$ range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy. △ Less

Submitted 30 June, 2016; originally announced June 2016.

Comments: 16 pages, 5 figures

Journal ref: 2D Materials 3 (2016) 045008 - Open Access

Excitonic properties of semiconducting monolayer and bilayer MoTe2

Authors: C. Robert, R. Picard, D. Lagarde, G. Wang, J. P. Echeverry, F. Cadiz, P. Renucci, A. Högele, T. Amand, X. Marie, I. C. Gerber, B. Urbaszek

Abstract: MoTe2 belongs to the semiconducting transition metal dichalcogenide family with some properties differing from the other well-studied members (Mo,W)(S,Se)2. The optical band gap is in the near infrared region and both monolayers and bilayers may have a direct optical band gap. We first simulate the band structure of both monolayer and bilayer MoTe2 with DFT-GW calculations. We find a direct (indir… ▽ More MoTe2 belongs to the semiconducting transition metal dichalcogenide family with some properties differing from the other well-studied members (Mo,W)(S,Se)2. The optical band gap is in the near infrared region and both monolayers and bilayers may have a direct optical band gap. We first simulate the band structure of both monolayer and bilayer MoTe2 with DFT-GW calculations. We find a direct (indirect) electronic band gap for the monolayer (bilayer). By solving the Bethe-Salpeter equation, we calculate similar energies for the direct excitonic states in monolayer and bilayer. We then study the optical properties by means of photoluminescence (PL) excitation, time-resolved PL and power dependent PL spectroscopy. We identify the same energy for the B exciton state in monolayer and bilayer. Following circularly polarized excitation, we do not find any exciton polarization for a large range of excitation energies. At low temperature (T=10 K), we measure similar PL decay times of the order of 4 ps for both monolayer and bilayer excitons with a slightly longer one for the bilayer. Finally, we observe a reduction of the exciton-exciton annihilation contribution to the non-radiative recombination in bilayer. △ Less

Submitted 10 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. B 94, 155425 (2016)

Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers

Authors: G. Wang, X. Marie, B. L. Liu, T. Amand, C. Robert, F. Cadiz, P. Renucci, B. Urbaszek

Abstract: The direct gap interband transitions in transition metal dichalcogenides monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transitions in either the $K^+$ or $K^-$ valley in momentum space are induced. Linearly polarized laser excitation prepares a coherent superposition of valley states. Here we demonstrate the control of the exciton valley coherence… ▽ More The direct gap interband transitions in transition metal dichalcogenides monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transitions in either the $K^+$ or $K^-$ valley in momentum space are induced. Linearly polarized laser excitation prepares a coherent superposition of valley states. Here we demonstrate the control of the exciton valley coherence in monolayer WSe2 by tuning the applied magnetic field perpendicular to the monolayer plane. We show rotation of this coherent superposition of valley states by angles as large as 30 degrees in applied fields up to 9 T. This exciton valley coherence control on ps time scale could be an important step towards complete control of qubits based on the valley degree of freedom. △ Less

Submitted 7 June, 2016; originally announced June 2016.

Comments: 5 pages, 2 figures

Journal ref: Phys. Rev. Lett. 117, 187401 (2016)

Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots

Authors: M. Vidal, M. V. Durnev, L. Bouet, T. Amand, M. M. Glazov, E. L. Ivchenko, P. Zhou, G. Wang, T. Mano, T. Kuroda, X. Marie, K. Sakoda, B. Urbaszek

Abstract: In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots.… ▽ More In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots. In magnetic fields applied along the growth axis, we create a strong nuclear spin polarization detected through the positively charged trion X$^+$ Zeeman and Overhauser splittings. The observation of four clearly resolved photoluminescence lines - a unique property of the (111) nanosystems - allows us to measure separately the electron and hole contribution to the Overhauser shift. The hyperfine interaction for holes is found to be about five times weaker than that for electrons. Our theory shows that this ratio depends not only on intrinsic material properties but also on the dot shape and carrier confinement through the heavy-hole mixing, an opportunity for engineering the hole-nuclear spin interaction by tuning dot size and shape. △ Less

Submitted 9 March, 2016; originally announced March 2016.

Comments: 4 pages, 2 figures, supplement

Journal ref: Phys. Rev. B 94, 121302 (2016)

Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers

Authors: C. Robert, D. Lagarde, F. Cadiz, G. Wang, B. Lassagne, T. Amand, A. Balocchi, P. Renucci, S. Tongay, B. Urbaszek, X. Marie

Abstract: We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenar… ▽ More We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenario: at low temperature (T $\leq$ 50 K), the exciton oscillator strength is so large that the entire light can be emitted before the time required for the establishment of a thermalized exciton distribution. For higher lattice temperatures, the photoluminescence dynamics is characterized by two regimes with very different characteristic times. First the PL intensity drops drastically with a decay time in the range of the picosecond driven by the escape of excitons from the radiative window due to exciton- phonon interactions. Following this first non-thermal regime, a thermalized exciton population is established gradually yielding longer photoluminescence decay times in the nanosecond range. Both the exciton effective radiative recombination and non-radiative recombination channels including exciton-exciton annihilation control the latter. Finally the temperature dependence of the measured exciton and trion dynamics indicates that the two populations are not in thermodynamical equilibrium. △ Less

Submitted 3 March, 2016; v1 submitted 1 March, 2016; originally announced March 2016.

Comments: 23 pages, 7 figures

Journal ref: Phys. Rev. B 93, 205423 (2016)

Splitting between Bright and Dark excitons in Transition Metal Dichalcogenide Monolayers

Authors: J. P. Echeverry, B. Urbaszek, T. Amand, X. Marie, I. C. Gerber

Abstract: The optical properties of transition metal dichalcogenide monolayers such as the two-dimensional semiconductors MoS$_2$ and WSe$_2$ are dominated by excitons, Coulomb bound electron-hole pairs. The light emission yield depends on whether the electron-hole transitions are optically allowed (bright) or forbidden (dark). By solving the Bethe Salpeter Equation on top of $GW$ wave functions in density… ▽ More The optical properties of transition metal dichalcogenide monolayers such as the two-dimensional semiconductors MoS$_2$ and WSe$_2$ are dominated by excitons, Coulomb bound electron-hole pairs. The light emission yield depends on whether the electron-hole transitions are optically allowed (bright) or forbidden (dark). By solving the Bethe Salpeter Equation on top of $GW$ wave functions in density functional theory calculations, we determine the sign and amplitude of the splitting between bright and dark exciton states. We evaluate the influence of the spin-orbit coupling on the optical spectra and clearly demonstrate the strong impact of the intra-valley Coulomb exchange term on the dark-bright exciton fine structure splitting. △ Less

Submitted 27 January, 2016; originally announced January 2016.

Comments: 6 pages, 2 figures

Journal ref: Phys. Rev. B 93, 121107 (2016)

Magneto-spectroscopy of excited states in charge-tunable GaAs/AlGaAs [111] quantum dots

Authors: M. V. Durnev, M. Vidal, L. Bouet, T. Amand, M. M. Glazov, E. L. Ivchenko, P. Zhou, G. Wang, T. Mano, N. Ha, T. Kuroda, X. Marie, K. Sakoda, B. Urbaszek

Abstract: We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the ``hot'' trions X$^{-*}$ and X$^{+*}$, and the doubly negatively charged exciton X$^{2-}$. Our magneto-photoluminescen… ▽ More We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the ``hot'' trions X$^{-*}$ and X$^{+*}$, and the doubly negatively charged exciton X$^{2-}$. Our magneto-photoluminescence experiments performed on single quantum dots in the Faraday geometry uncover characteristic emission patterns for each excited electron-hole complex, which are very different from the photoluminescence spectra observed in (001)-grown quantum dots. We present a detailed theory of the fine structure and magneto-photoluminescence spectra of X$^{-*}$, X$^{+*}$ and X$^{2-}$ complexes, governed by the interplay between the electron-hole Coulomb exchange interaction and the heavy-hole mixing, characteristic for these quantum dots with a trigonal symmetry. Comparison between experiment and theory of the magneto-photoluminescence allows for precise charge state identification, as well as extraction of electron-hole exchange interaction constants and $g$-factors for the charge carriers occupying excited states. △ Less

Submitted 25 November, 2015; originally announced November 2015.

Comments: 12 pages, 5 figures

Journal ref: Phys. Rev. B 93, 245412 (2016)

Spin-orbit engineering in transition metal dichalcogenide alloy monolayers

Authors: Gang Wang, Cedric Robert, Aslihan Suslu, Bin Chen, Sijie Yang, Sarah Alamdari, Iann C. Gerber, Thierry Amand, Xavier Marie, Sefaattin Tongay, Bernhard Urbaszek

Abstract: Transition metal dichalcogenide (TMDC) monolayers are newly discovered semiconductors for a wide range of applications in electronics and optoelectronics. Most studies have focused on binary monolayers that share common properties: direct optical bandgap, spin-orbit (SO) splittings of hundreds of meV, light-matter interaction dominated by robust excitons and coupled spin-valley states of electrons… ▽ More Transition metal dichalcogenide (TMDC) monolayers are newly discovered semiconductors for a wide range of applications in electronics and optoelectronics. Most studies have focused on binary monolayers that share common properties: direct optical bandgap, spin-orbit (SO) splittings of hundreds of meV, light-matter interaction dominated by robust excitons and coupled spin-valley states of electrons. Studies on alloy-based monolayers are more recent, yet they may not only extend the possibilities for TMDC applications through specific engineering but also help understanding the differences between each binary material. Here, we synthesized highly crystalline Mo$_{(1-x)}$W$_{x}$Se$_2$ to show engineering of the direct optical bandgap and the SO coupling in ternary alloy monolayers. We investigate the impact of the tuning of the SO spin splitting on the optical and polarization properties. We show a non-linear increase of the optically generated valley polarization as a function of tungsten concentration, where 40% tungsten incorporation is sufficient to achieve valley polarization as high as in binary WSe2. We also probe the impact of the tuning of the conduction band SO spin splitting on the bright versus dark state population i.e. PL emission intensity. We show that the MoSe2 PL intensity decreases as a function of temperature by an order of magnitude, whereas for WSe2 we measure surprisingly an order of magnitude increase over the same temperature range (T=4-300K). The ternary material shows a trend between these two extreme behaviors. These results show the strong potential of SO engineering in ternary TMDC alloys for optoelectronics and applications based on electron spin- and valley-control. △ Less

Submitted 26 June, 2015; originally announced June 2015.

Comments: 5 pages, 3 figures + supplement

Journal ref: Nature Communications 6, Article number: 10110 (2015)

Double resonant Raman scattering and valley coherence generation in monolayer WSe2

Authors: G. Wang, M. M. Glazov, C. Robert, T. Amand, X. Marie, B. Urbaszek

Abstract: The electronic states at the direct band gap of monolayer WSe2 at the $K^+$ and $K^-$ valleys are related by time reversal and may be viewed as pseudo-spins. The corresponding optical interband transitions are governed by robust excitons. In double resonant Raman spectroscopy, we uncover that the 2s exciton state energy differs from the 1s state energy by exactly the energy of the combination of s… ▽ More The electronic states at the direct band gap of monolayer WSe2 at the $K^+$ and $K^-$ valleys are related by time reversal and may be viewed as pseudo-spins. The corresponding optical interband transitions are governed by robust excitons. In double resonant Raman spectroscopy, we uncover that the 2s exciton state energy differs from the 1s state energy by exactly the energy of the combination of several prominent phonons. Superimposed on the exciton photoluminescence (PL) we observe the double resonant Raman signal. This spectrally narrow peak shifts with the excitation laser energy as incoming photons match the 2s and outgoing photons the 1s exciton transition. The multi-phonon resonance has important consequences: Following linearly polarized excitation of the 2s exciton a superposition of valley states is generated which can relax fast via phonon emission and with minimal loss of coherence from the 2s to 1s state. This explains the high degree of valley coherence measured for the 1s exciton PL. △ Less

Submitted 22 May, 2015; originally announced May 2015.

Comments: 5 pages, 3 figures, supplement

Journal ref: Phys. Rev. Lett. 115, 117401 (2015)

Optical orientation of electron spins and valence band spectroscopy in germanium

Authors: Fabio Pezzoli, Andrea Balocchi, Elisa Vitiello, Thierry Amand, Xavier Marie

Abstract: We have investigated optical orientation in the vicinity of the direct gap of bulk germanium. The electron spin polarization is studied via polarization-resolved photoluminescence excitation spectroscopy unfolding the interplay between do** and ultrafast electron transfer from the center of the Brillouin zone towards its edge. As a result, the direct-gap photoluminescence circular polarisation c… ▽ More We have investigated optical orientation in the vicinity of the direct gap of bulk germanium. The electron spin polarization is studied via polarization-resolved photoluminescence excitation spectroscopy unfolding the interplay between do** and ultrafast electron transfer from the center of the Brillouin zone towards its edge. As a result, the direct-gap photoluminescence circular polarisation can vary from 30% to -60% when the excitation laser energy increases. This study provides also simultaneous access to the resonant electronic Raman scattering due to inter-valence band excitations of spin-polarized holes, yielding a fast and versatile spectroscopic approach for the determination of the energy spectrum of holes in semiconducting materials. △ Less

Submitted 27 April, 2015; originally announced April 2015.

Exciton states in monolayer MoSe2: impact on interband transitions

Authors: G. Wang, I. C. Gerber, L. Bouet, D. Lagarde, A. Balocchi, M. Vidal, E. Palleau, T. Amand, X. Marie, B. Urbaszek

Abstract: We combine linear and non-linear optical spectroscopy at 4K with ab initio calculations to study the electronic bandstructure of MoSe2 monolayers. In 1-photon photoluminescence excitation (PLE) and reflectivity we measure a separation between the A- and B-exciton emission of 220 meV. In 2-photon PLE we detect for the A- and B-exciton the 2p state 180meV above the respective 1s state. In second har… ▽ More We combine linear and non-linear optical spectroscopy at 4K with ab initio calculations to study the electronic bandstructure of MoSe2 monolayers. In 1-photon photoluminescence excitation (PLE) and reflectivity we measure a separation between the A- and B-exciton emission of 220 meV. In 2-photon PLE we detect for the A- and B-exciton the 2p state 180meV above the respective 1s state. In second harmonic generation (SHG) spectroscopy we record an enhancement by more than 2 orders of magnitude of the SHG signal at resonances of the charged exciton and the 1s and 2p neutral A- and B-exciton. Our post-Density Functional Theory calculations show in the conduction band along the $K-Γ$ direction a local minimum that is energetically and in k-space close to the global minimum at the K-point. This has a potentially strong impact on the polarization and energy of the excitonic states that govern the interband transitions and marks an important difference to MoS2 and WSe2 monolayers. △ Less

Submitted 23 April, 2015; originally announced April 2015.

Comments: 8 pages, 3 figures

Journal ref: 2D Materials, 2, 045005 (2015)

Spin and valley dynamics of excitons in transition metal dichalcogenides monolayers

Authors: M. M. Glazov, E. L. Ivchenko, G. Wang, T. Amand, X. Marie, B. Urbaszek, B. L. Liu

Abstract: Monolayers of transition metal dichalcogenides, namely, molybdenum and tungsten disulfides and diselenides demonstrate unusual optical properties related to the spin-valley locking effect. Particularly, excitation of monolayers by circularly polarized light selectively creates electron-hole pairs or excitons in non-equivalent valleys in momentum space, depending on the light helicity. This allows… ▽ More Monolayers of transition metal dichalcogenides, namely, molybdenum and tungsten disulfides and diselenides demonstrate unusual optical properties related to the spin-valley locking effect. Particularly, excitation of monolayers by circularly polarized light selectively creates electron-hole pairs or excitons in non-equivalent valleys in momentum space, depending on the light helicity. This allows studying the inter-valley dynamics of charge carriers and Coulomb complexes by means of optical spectroscopy. Here we present a concise review of the neutral exciton fine structure and its spin and valley dynamics in monolayers of transition metal dichalcogenides. It is demonstrated that the long-range exchange interaction between an electron and a hole in the exciton is an efficient mechanism for rapid mixing between bright excitons made of electron-hole pairs in different valleys. We discuss the physical origin of the long-range exchange interaction and outline its derivation in both the electrodynamical and $\mathbf k \cdot \mathbf p$ approaches. We further present a model of bright exciton spin dynamics driven by an interplay between the long-range exchange interaction and scattering. Finally, we discuss the application of the model to describe recent experimental data obtained by time-resolved photoluminescence and Kerr rotation techniques. △ Less

Submitted 16 September, 2015; v1 submitted 15 April, 2015; originally announced April 2015.

Comments: 15 pages, 12+1 figures, Feature article submitted to pss b as contribution of IWEPNM 2015

Journal ref: Phys. Status Solidi B 252, No. 11, 2349-2362 (2015)

Magneto-optics in transition metal diselenide monolayers

Authors: G. Wang, L. Bouet, M. M. Glazov, T. Amand, E. L. Ivchenko, E. Palleau, X. Marie, B. Urbaszek

Abstract: We perform photoluminescence experiments at 4K on two different transition metal diselenide monolayers, namely MoSe2 and WSe2 in magnetic fields $B_z$ up to 9T applied perpendicular to the sample plane. In MoSe2 monolayers the valley polarization of the neutral and the charged exciton (trion) can be tuned by the magnetic field, independent of the excitation laser polarization. In the investigated… ▽ More We perform photoluminescence experiments at 4K on two different transition metal diselenide monolayers, namely MoSe2 and WSe2 in magnetic fields $B_z$ up to 9T applied perpendicular to the sample plane. In MoSe2 monolayers the valley polarization of the neutral and the charged exciton (trion) can be tuned by the magnetic field, independent of the excitation laser polarization. In the investigated WSe2 monolayer sample the evolution of the trion valley polarization depends both on the applied magnetic field and the excitation laser helicity, while the neutral exciton valley polarization depends only on the latter. Remarkably we observe a reversal of the sign of the trion polarization between WSe2 and MoSe2. For both systems we observe a clear Zeeman splitting for the neutral exciton and the trion of about $\pm2$meV at $B_z\mp9$T. The extracted Landé-factors for both exciton complexes in both materials are $g\approx -4$. △ Less

Submitted 13 March, 2015; originally announced March 2015.

Comments: 9 pages, 2 figures

Journal ref: 2D Materials 2 (2015) 034002

Polarization and time-resolved photoluminescence spectroscopy of excitons in MoSe2 monolayers

Authors: G. Wang, E. Palleau, T. Amand, S. Tongay, X. Marie, B. Urbaszek

Abstract: We investigate valley exciton dynamics in MoSe2 monolayers in polarization- and time-resolved photoluminescence (PL) spectroscopy at 4K. Following circularly polarized laser excitation, we record a low circular polarization degree of the PL of typically $\leq5\%$. This is about 10 times lower than the polarization induced under comparable conditions in MoS2 and WSe2 monolayers. The evolution of th… ▽ More We investigate valley exciton dynamics in MoSe2 monolayers in polarization- and time-resolved photoluminescence (PL) spectroscopy at 4K. Following circularly polarized laser excitation, we record a low circular polarization degree of the PL of typically $\leq5\%$. This is about 10 times lower than the polarization induced under comparable conditions in MoS2 and WSe2 monolayers. The evolution of the exciton polarization as a function of excitation laser energy and power is monitored in PL excitation (PLE) experiments. Fast PL emission times are recorded for both the neutral exciton of $\leq3$ ps and for the charged exciton (trion) of 12 ps. △ Less

Submitted 12 February, 2015; originally announced February 2015.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 106, 112101 (2015)

Exciton dynamics in WSe2 bilayers

Authors: G. Wang, X. Marie, L. Bouet, M. Vidal, A. Balocchi, T. Amand, D. Lagarde, B. Urbaszek

Abstract: We investigate exciton dynamics in 2H-WSe2 bilayers in time-resolved photoluminescence (PL) spectroscopy. Fast PL emission times are recorded for both the direct exciton with $τ_{D}$ ~ 3 ps and the indirect optical transition with $τ_{i}$ ~ 25 ps. For temperatures between 4 to 150 K $τ_{i}$ remains constant. Following polarized laser excitation, we observe for the direct exciton transition at the… ▽ More We investigate exciton dynamics in 2H-WSe2 bilayers in time-resolved photoluminescence (PL) spectroscopy. Fast PL emission times are recorded for both the direct exciton with $τ_{D}$ ~ 3 ps and the indirect optical transition with $τ_{i}$ ~ 25 ps. For temperatures between 4 to 150 K $τ_{i}$ remains constant. Following polarized laser excitation, we observe for the direct exciton transition at the K point of the Brillouin zone efficient optical orientation and alignment during the short emission time $τ_{D}$. The evolution of the direct exciton polarization and intensity as a function of excitation laser energy is monitored in PL excitation (PLE) experiments. △ Less

Submitted 30 September, 2014; originally announced September 2014.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 105, 182105 (2014)