Modulation to the Rescue: Identifying Sub-Circuitry in the Transistor Morass for Targeted Analysis
Authors:
Xhani Marvin Saß,
Thilo Krachenfels,
Frederik Dermot Pustelnik,
Jean-Pierre Seifert,
Christian Große,
Frank Altmann
Abstract:
Physical attacks form one of the most severe threats against secure computing platforms. Their criticality arises from their corresponding threat model: By, e.g., passively measuring an integrated circuit's (IC's) environment during a security-related operation, internal secrets may be disclosed. Furthermore, by actively disturbing the physical runtime environment of an IC, an adversary can cause…
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Physical attacks form one of the most severe threats against secure computing platforms. Their criticality arises from their corresponding threat model: By, e.g., passively measuring an integrated circuit's (IC's) environment during a security-related operation, internal secrets may be disclosed. Furthermore, by actively disturbing the physical runtime environment of an IC, an adversary can cause a specific, exploitable misbehavior. The set of physical attacks consists of techniques that apply either globally or locally. When compared to global techniques, local techniques exhibit a much higher precision, hence having the potential to be used in advanced attack scenarios. However, using physical techniques with additional spatial dependency expands the parameter search space exponentially. In this work, we present and compare two techniques, namely laser logic state imaging (LLSI) and lock-in thermography (LIT), that can be used to discover sub-circuitry of an entirely unknown IC based on optical and thermal principles. We show that the time required to identify specific regions can be drastically reduced, thus lowering the complexity of physical attacks requiring positional information. Our case study on an Intel H610 Platform Controller Hub showcases that, depending on the targeted voltage rail, our technique reduces the search space by around 90 to 98 percent.
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Submitted 18 September, 2023;
originally announced September 2023.
Study and characterization of GaN MOS capacitors: planar versus trench topographies
Authors:
K. Mukherjee,
C. De Santi,
S. You,
K. Geens,
M. Borga,
S. Decoutere,
B. Bakeroot,
P. Diehle,
F. Altmann,
G. Meneghesso,
E. Zanoni,
M. Meneghini
Abstract:
Develo** high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket etching the GaN surface does not degrade the robustness of t…
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Develo** high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket etching the GaN surface does not degrade the robustness of the deposited dielectric layer; (ii) the addition of the trench etch, while improving reproducibility, results in a decrease of breakdown performance compared to the planar structures. (iii) for the trench structures, the voltage for a 10 years lifetime is still above 20 V, indicating a good robustness. (iv) To review the trap** performance across the metal-dielectric-GaN stack, forward-reverse capacitance-voltage measurements with and without stress and photo-assistance are performed. Overall, as-grown planar capacitors devoid of prior etching steps show lowest trap**, while trench capacitors have higher interface trap**, and bulk trap** comparable to the blanket etched capacitors. (v) The nanostructure of the GaN/dielectric interface was characterized by high resolution scanning transmission electron microscopy (HR-STEM). An increased roughness of 2-3 monolayers at the GaN surface was observed after blanket etching, which was correlated to the higher density of interface traps. The results presented in this paper give fundamental insight on how the etch and trench processing affects the trap** and robustness of trench-gate GaN-MOSFETs, and provide guidance for the optimization of device performance.
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Submitted 21 July, 2022; v1 submitted 20 July, 2022;
originally announced July 2022.
