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Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybrids
Authors:
Matthias Althammer,
Sibylle Meyer,
Hiroyasu Nakayama,
Michael Schreier,
Stephan Altmannshofer,
Mathias Weiler,
Hans Huebl,
Stephan Geprägs,
Matthias Opel,
Rudolf Gross,
Daniel Meier,
Christoph Klewe,
Timo Kuschel,
Jan-Michael Schmalhorst,
Günter Reiss,
Liming Shen,
Arunava Gupta,
Yan-Ting Chen,
Gerrit E. W. Bauer,
Eiji Saitoh,
Sebastian T. B. Goennenwein
Abstract:
We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator we use either yttrium iron garnet, nickel ferrite or magnetite and for the nonferromagnet copper or gold. The spin Hall magnetoresistance effect is theoretic…
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We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator we use either yttrium iron garnet, nickel ferrite or magnetite and for the nonferromagnet copper or gold. The spin Hall magnetoresistance effect is theoretically ascribed to the combined action of spin Hall and inverse spin Hall effect in the platinum metal top layer. It therefore should characteristically depend upon the orientation of the magnetization in the adjacent ferromagnet, and prevail even if an additional, nonferromagnetic metal layer is inserted between Pt and the ferromagnet. Our experimental data corroborate these theoretical conjectures. Using the spin Hall magnetoresistance theory to analyze our data, we extract the spin Hall angle and the spin diffusion length in platinum. For a spin mixing conductance of $4\times10^{14}\;\mathrm{Ω^{-1}m^{-2}}$ we obtain a spin Hall angle of $0.11\pm0.08$ and a spin diffusion length of $(1.5\pm0.5)\;\mathrm{nm}$ for Pt in our thin film samples.
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Submitted 22 April, 2013;
originally announced April 2013.
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Theory of spin Hall magnetoresistance
Authors:
Yan-Ting Chen,
Saburo Takahashi,
Hiroyasu Nakayama,
Matthias Althammer,
Sebastian T. B. Goennenwein,
Eiji Saitoh,
Gerrit E. W. Bauer
Abstract:
We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbit interactions, such as platinum (Pt). The SMR is induced by the simultaneous action of spin Hall and inverse spin Hall effects and therefore a non-equilibrium proximity phenomenon. We compute the SMR in F$|$N and F…
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We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbit interactions, such as platinum (Pt). The SMR is induced by the simultaneous action of spin Hall and inverse spin Hall effects and therefore a non-equilibrium proximity phenomenon. We compute the SMR in F$|$N and F$|$N$|$F layered systems, treating N by spin-diffusion theory with quantum mechanical boundary conditions at the interfaces in terms of the spin-mixing conductance. Our results explain the experimentally observed spin Hall magnetoresistance in N$|$F bilayers. For F$|$N$|$F spin valves we predict an enhanced SMR amplitude when magnetizations are collinear. The SMR and the spin-transfer torques in these trilayers can be controlled by the magnetic configuration.
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Submitted 6 February, 2013;
originally announced February 2013.
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Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect
Authors:
H. Nakayama,
M. Althammer,
Y. -T. Chen,
K. Uchida,
Y. Kajiwara,
D. Kikuchi,
T. Ohtani,
S. Geprägs,
M. Opel,
S. Takahashi,
R. Gross,
G. E. W. Bauer,
S. T. B. Goennenwein,
E. Saitoh
Abstract:
We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates f…
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We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it "spin Hall magnetoresistance."
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Submitted 1 November, 2012;
originally announced November 2012.
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Spin transport and spin dephasing in zinc oxide
Authors:
Matthias Althammer,
Eva-Maria Karrer-Müller,
Sebastian T. B. Goennenwein,
Matthias Opel,
Rudolf Gross
Abstract:
The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes (TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO in all-electrical experiments. The measured magnetoresistance agrees well with the prediction of a two s…
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The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes (TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO in all-electrical experiments. The measured magnetoresistance agrees well with the prediction of a two spin channel model with spin-dependent interface resistance. Fitting the data yields spin diffusion lengths of 10.8nm (2K), 10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns (2K), 2.0ns (10K), and 31ps (200K).
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Submitted 27 August, 2012; v1 submitted 16 May, 2012;
originally announced May 2012.
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Local charge and spin currents in magnetothermal landscapes
Authors:
Mathias Weiler,
Matthias Althammer,
Franz D. Czeschka,
Hans Huebl,
Martin S. Wagner,
Matthias Opel,
Inga-Mareen Imort,
Günter Reiss,
Andy Thomas,
Rudolf Gross,
Sebastian T. B. Goennenwein
Abstract:
A scannable laser beam is used to generate local thermal gradients in metallic (Co2FeAl) or insulating (Y3Fe5O12) ferromagnetic thin films. We study the resulting local charge and spin currents that arise due to the anomalous Nernst effect (ANE) and the spin Seebeck effect (SSE), respectively. In the local ANE experiments, we detect the voltage in the Co2FeAl thin film plane as a function of the l…
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A scannable laser beam is used to generate local thermal gradients in metallic (Co2FeAl) or insulating (Y3Fe5O12) ferromagnetic thin films. We study the resulting local charge and spin currents that arise due to the anomalous Nernst effect (ANE) and the spin Seebeck effect (SSE), respectively. In the local ANE experiments, we detect the voltage in the Co2FeAl thin film plane as a function of the laser spot position and external magnetic field magnitude and orientation. The local SSE effect is detected in a similar fashion by exploiting the inverse spin Hall effect in a Pt layer deposited on top of the Y3Fe5O12. Our findings establish local thermal spin and charge current generation as well as spin caloritronic domain imaging.
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Submitted 18 October, 2011;
originally announced October 2011.
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Scaling behavior of the spin pum** effect in ferromagnet/platinum bilayers
Authors:
F. D. Czeschka,
L. Dreher,
M. S. Brandt,
M. Weiler,
M. Althammer,
I. -M. Imort,
G. Reiss,
A. Thomas,
W. Schoch,
W. Limmer,
H. Huebl,
R. Gross,
S. T. B. Goennenwein
Abstract:
We systematically measured the DC voltage V_ISH induced by spin pum** together with the inverse spin Hall effect in ferromagnet/platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V_ISH invariably has the same polarity. V_ISH furthermore scales with the magnetization precession cone angl…
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We systematically measured the DC voltage V_ISH induced by spin pum** together with the inverse spin Hall effect in ferromagnet/platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V_ISH invariably has the same polarity. V_ISH furthermore scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism or type. These findings quantitatively corroborate the present theoretical understanding of spin pum** in combination with the inverse spin Hall effect.
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Submitted 29 July, 2011; v1 submitted 14 December, 2010;
originally announced December 2010.
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Novel Multifunctional Materials Based on Oxide Thin Films and Artificial Heteroepitaxial Multilayers
Authors:
Matthias Opel,
Stephan Gepraegs,
Edwin P. Menzel,
Andrea Nielsen,
Daniel Reisinger,
Karl-Wilhelm Nielsen,
Andreas Brandlmaier,
Franz D. Czeschka,
Matthias Althammer,
Mathias Weiler,
Sebastian T. B. Goennenwein,
Juergen Simon,
Matthias Svete,
Wentao Yu,
Sven-Martin Huehne,
Werner Mader,
Rudolf Gross
Abstract:
Transition metal oxides show fascinating physical properties such as high temperature superconductivity, ferro- and antiferromagnetism, ferroelectricity or even multiferroicity. The enormous progress in oxide thin film technology allows us to integrate these materials with semiconducting, normal conducting, dielectric or non-linear optical oxides in complex oxide heterostructures, providing the ba…
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Transition metal oxides show fascinating physical properties such as high temperature superconductivity, ferro- and antiferromagnetism, ferroelectricity or even multiferroicity. The enormous progress in oxide thin film technology allows us to integrate these materials with semiconducting, normal conducting, dielectric or non-linear optical oxides in complex oxide heterostructures, providing the basis for novel multi-functional materials and various device applications. Here, we report on the combination of ferromagnetic, semiconducting, metallic, and dielectric materials properties in thin films and artificial heterostructures using laser molecular beam epitaxy. We discuss the fabrication and characterization of oxide-based ferromagnetic tunnel junctions, transition metal-doped semiconductors, intrinsic multiferroics, and artificial ferroelectric/ferromagetic heterostructures - the latter allow for the detailed study of strain effects, forming the basis of spin-mechanics. For characterization we use X-ray diffraction, SQUID magnetometry, magnetotransport measurements, and advanced methods of transmission electron microscopy with the goal to correlate macroscopic physical properties with the microstructure of the thin films and heterostructures.
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Submitted 22 July, 2010; v1 submitted 25 January, 2010;
originally announced January 2010.
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Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature
Authors:
M. Weiler,
A. Brandlmaier,
S. Gepraegs,
M. Althammer,
M. Opel,
C. Bihler,
H. Huebl,
M. S. Brandt,
R. Gross,
S. T. B. Goennenwein
Abstract:
The control of magnetic properties by means of an electric field is an important aspect in magnetism and magnetoelectronics. We here utilize magnetoelastic coupling in ferromagnetic/piezoelectric hybrids to realize a voltage control of magnetization orientation at room temperature. The samples consist of polycrystalline nickel thin films evaporated onto piezoelectric actuators. The magnetic prop…
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The control of magnetic properties by means of an electric field is an important aspect in magnetism and magnetoelectronics. We here utilize magnetoelastic coupling in ferromagnetic/piezoelectric hybrids to realize a voltage control of magnetization orientation at room temperature. The samples consist of polycrystalline nickel thin films evaporated onto piezoelectric actuators. The magnetic properties of these multifunctional hybrids are investigated at room temperature as a function of the voltage controlled stress exerted by the actuator on the Ni film. Ferromagnetic resonance spectroscopy shows that the magnetic easy axis in the Ni film plane is rotated by 90 degree upon changing the polarity of the voltage Vp applied to the actuator. In other words, the in-plane uniaxial magnetic anisotropy of the Ni film can be inverted via the application of an appropriate voltage Vp. Using SQUID magnetometry, the evolution of the magnetization vector is recorded as a function of Vp and of the external magnetic field. Changing Vp allows to reversibly adjust the magnetization orientation in the Ni film plane within a range of approximately 70 degree. All magnetometry data can be quantitatively understood in terms of the magnetic free energy determined from the ferromagnetic resonance experiments. These results demonstrate that magnetoelastic coupling in hybrid structures indeed is a viable option to control magnetization orientation in technologically relevant ferromagnetic thin films at room temperature.
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Submitted 2 October, 2008;
originally announced October 2008.
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Epitaxial Zn(x)Fe(3-x)O(4) Thin Films: A Spintronic Material with Tunable Electrical and Magnetic Properties
Authors:
Deepak Venkateshvaran,
Matthias Althammer,
Andrea Nielsen,
Stephan Gepraegs,
M. S. Ramachandra Rao,
Sebastian T. B. Goennenwein,
Matthias Opel,
Rudolf Gross
Abstract:
The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial thin films with 0<=x<=0.9 on MgO(001) substrates with excellent structural properties both in pure Ar atmosphere and an Ar/O2 mixture by laser molecular beam…
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The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial thin films with 0<=x<=0.9 on MgO(001) substrates with excellent structural properties both in pure Ar atmosphere and an Ar/O2 mixture by laser molecular beam epitaxy. We find that the electrical conductivity and the saturation magnetization can be tuned over a wide range during growth. Our extensive characterization of the films provides a clear picture of the underlying physics of this spinel ferrimagnet with antiparallel Fe moments on the A and B sublattice: (i) Zn substitution removes both Fe3+ moments from the A sublattice and itinerant charge carriers from the B sublattice, (ii) growth in finite oxygen partial pressure generates Fe vacancies on the B sublattice also removing itinerant charge carriers, and (iii) application of both Zn substitution and excess oxygen results in a compensation effect as Zn substitution partially removes the Fe vacancies. A decrease (increase) of charge carrier density results in a weakening (strengthening) of double exchange and thereby a decrease (increase) of conductivity and the saturation magnetization. This scenario is confirmed by the observation that the saturation magnetization scales with the longitudinal conductivity. The combination of tailored films with semiconductor materials such as ZnO in multi-functional heterostructures seems to be particularly appealing.
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Submitted 20 March, 2009; v1 submitted 27 August, 2008;
originally announced August 2008.
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All Oxide Ferromagnet/Semiconductor Epitaxial Heterostructures
Authors:
A. Nielsen,
A. Brandlmaier,
M. Althammer,
W. Kaiser,
M. Opel,
J. Simon,
W. Mader,
S. T. B. Goennenwein,
R. Gross
Abstract:
Oxide based ferromagnet/semiconductor heterostructures offer substantial advantages for spin electronics. We have grown (111) oriented Fe3O4 thin films and Fe3O4/ZnO heterostructures on ZnO(0001) and Al2O3(0001) substrates by pulsed laser deposition. High quality crystalline films with mosaic spread as small as 0.03 degree, sharp interfaces, and rms surface roughness of 0.3 nm were achieved. Mag…
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Oxide based ferromagnet/semiconductor heterostructures offer substantial advantages for spin electronics. We have grown (111) oriented Fe3O4 thin films and Fe3O4/ZnO heterostructures on ZnO(0001) and Al2O3(0001) substrates by pulsed laser deposition. High quality crystalline films with mosaic spread as small as 0.03 degree, sharp interfaces, and rms surface roughness of 0.3 nm were achieved. Magnetization measurements show clear ferromagnetic behavior of the magnetite layers with a saturation magnetization of 3.2 muB/f.u. at 300 K. Our results demonstrate that the Fe3O4/ZnO system is an intriguing and promising candidate for the realization of multi-functional heterostructures.
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Submitted 16 August, 2008;
originally announced August 2008.
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Anomalous Hall Effect in Magnetite: Universal Scaling Relation Between Hall and Longitudinal Conductivity in Low-Conductivity Ferromagnets
Authors:
Deepak Venkateshvaran,
Wolfgang Kaiser,
Andrea Boger,
Matthias Althammer,
M. S. Ramachandra Rao,
Sebastian T. B. Goennenwein,
Matthias Opel,
Rudolf Gross
Abstract:
The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strai…
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The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strain state, and oxygen deficiency. Despite substantial differences in the magnetic properties and magnitudes of the anomalous Hall conductivity $σ_{xy}^{\rm AHE}$ and the longitudinal conductivity $σ_{xx}$ over several orders of magnitude, a universal scaling relation $σ_{xy}^{\rm AHE} \propto σ_{xx}^α$ with $α= 1.69 \pm 0.08$ was found for all investigated samples. Our results are in agreement with recent theoretical and experimental findings for ferromagnetic metals in the dirty limit, where transport is by metallic conduction. We find the same scaling relation for magnetite, where hop** transport prevails. The fact that this relation is independent of crystallographic orientation, Zn content, strain state, and oxygen deficiency suggests that it is universal and particularly does not depend on the nature of the transport mechanism.
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Submitted 8 May, 2008;
originally announced May 2008.
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Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching
Authors:
C. Bihler,
M. Althammer,
A. Brandlmaier,
S. Gepraegs,
M. Weiler,
M. Opel,
W. Schoch,
W. Limmer,
R. Gross,
M. S. Brandt,
S. T. B. Goennenwein
Abstract:
We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V_p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. We find…
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We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V_p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. We find that the easy axis of the strain-induced uniaxial magnetic anisotropy contribution can be inverted from the [110] to the [1-10] direction via the application of appropriate voltages V_p. At T=5K the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of rho(H) loops are shifted as a function of V_p at this temperature. At 50K - where the magnetoelastic term dominates the magnetic anisotropy - we are able to tune the magnetization orientation by about 70 degree solely by means of the electrical voltage V_p applied. Furthermore, we derive the magnetostrictive constant lambda_111 as a function of temperature and find values consistent with earlier results. We argue that the piezo-voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo-voltage induced irreversible magnetization switching at T=40K, which constitutes the basic principle of a nonvolatile memory element.
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Submitted 8 April, 2008;
originally announced April 2008.
