Radiation damage on SiPMs for Space Applications
Authors:
Anna Rita Altamura,
Fabio Acerbi,
Benedetto Di Ruzza,
Enrico Verroi,
Stefano Merzi,
Alberto Gola
Abstract:
Silicon Photo-multipliers (SiPMs) are very sensitive photo-detectors that experienced a big development in the last years in several applications, like LIDAR, astrophysics, medical imaging and high energy physics (HEP) experiments. In HEP experiments, in particular, they are often exposed to significant radiation doses. The main purpose of this manuscript is the characterization of several FBK SiP…
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Silicon Photo-multipliers (SiPMs) are very sensitive photo-detectors that experienced a big development in the last years in several applications, like LIDAR, astrophysics, medical imaging and high energy physics (HEP) experiments. In HEP experiments, in particular, they are often exposed to significant radiation doses. The main purpose of this manuscript is the characterization of several FBK SiPM technologies when exposed to 74 $MeV$ protons with a total fluence comparable to the one that they would experience in space along circular Low Earth Orbits (LEO), Polar, during a five years mission.
In this work, we estimated the expected proton fluences along the selected orbit, by means of the SPENVIS software. Several fluence steps were chosen to consider dense fluence intervals and have a more accurate sight on the whole damage process. We estimated a maximum fluence achieved during the tests of $6.4 \times 10^{11}$ $n_{eq}/cm^2$. Based on such simulations, we irradiated several SiPM technologies. We developed a custom experimental setup, which was used to perform online reverse voltage-current, right after each irradiation step, to minimize the effect of the annealing on the measurement.
The results are then displayed, in particular the currents, the noise and the Photon Detection Efficiency. Also a 30-days study on the annealing of the devices was performed.
Lastly, the conclusions are drawn on the basis of the Signal-to-Noise Ratio (SNR), taking into account the standard parameters of famous satellites using similar orbits as the ones considered into this work.
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Submitted 15 December, 2021;
originally announced December 2021.
Characterization of Silicon Photomultipliers after proton irradiation up to $10^{12} n_{eq}/mm^2$
Authors:
A. R. Altamura,
F. Acerbi,
C. Nociforo,
V. Regazzoni,
A. Mazzi,
A. Gola
Abstract:
Silicon photomultipliers (SiPMs) are highly-sensitive photodetectors emerging as the technology of choice for many applications, including large high-energy physics experiments where they often are exposed to high radiation fluences. In recent years, there has been an increasing interest in assessing the performance deterioration of such detectors after the irradiation with proton or neutron, with…
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Silicon photomultipliers (SiPMs) are highly-sensitive photodetectors emerging as the technology of choice for many applications, including large high-energy physics experiments where they often are exposed to high radiation fluences. In recent years, there has been an increasing interest in assessing the performance deterioration of such detectors after the irradiation with proton or neutron, with different fluence levels.
In this work, samples of different FBK SiPM technologies, made with different manufacturing technologies, were irradiated at the INFN-LNS facility (Italy) with protons reaching fluences up to $10^{12}n_{eq}/mm^2$ (1 MeV neutron equivalent) which correspond $10^{14}n_{eq}/cm^2$ to and their performances were characterized in detail after an approximately 30 days room temperature annealing. The results show a significant worsening of the primary noise (dark count rate) of the detectors, which increases with the irradiation dose, whereas the other performance parameters like the micro-cell gain, the correlated noise probability and the photon detection efficiency do not show significant variations over the investigated dose range. The breakdown voltage estimation after irradiation is another important aspect for a SiPM. In this contribution, we show several methods for its estimation and compare the results. We also introduced new methodologies to characterize the performance of the SiPMs when they present a very high level of noise.
Lastly, we also analyzed the spatial localization of the proton-induced defects inside the device, i.e. the defects that mostly contribute to the increase of the DCR of the device, through the emission microscopy (EMMI) technique. In particular, we analyzed the SiPMs at the single cell level, trying to identify and spatially localize the defects.
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Submitted 23 June, 2021;
originally announced June 2021.
