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A multiphysics model for high frequency optomechanical sensors optically actuated and detected in the oscillating mode
Authors:
Samantha Sbarra,
Pierre Etienne Allain,
Aristide Lemaître,
Ivan Favero
Abstract:
Optomechanical systems combine extreme sensitivity and bandwidth in the control of mechanical motion, of interest for various applications. Integrated on a chip, actuated and detected all-optically by a single laser, they could disrupt sensing technologies. We introduce here a multiphysics model that describes their operation in the oscillating mode, under sinusoidal modulation of the laser, when…
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Optomechanical systems combine extreme sensitivity and bandwidth in the control of mechanical motion, of interest for various applications. Integrated on a chip, actuated and detected all-optically by a single laser, they could disrupt sensing technologies. We introduce here a multiphysics model that describes their operation in the oscillating mode, under sinusoidal modulation of the laser, when both photothermal forces and radiation pressure are present, and when nonlinear absorption occurs in the device. The model is validated by systematic experiments on ultra-high frequency optomechanical disk resonators and leads to a quantitative assessment of the amplitude and phase of the demodulated output signal, which carries the sensing information.
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Submitted 17 March, 2021;
originally announced March 2021.
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Optomechanical Resonating Probe for Very High Speed Sensing of Atomic Forces
Authors:
Pierre Etienne Allain,
Lucien Schwab,
Colin Misner,
Marc Gely,
Estelle Mairiaux,
Maxime Hermouet,
Benjamin Walter,
Giuseppe Leo,
Sébastien Hentz,
Marc Faucher,
Guillaume Jourdan,
Bernard Legrand,
Ivan Favero
Abstract:
Atomic force spectroscopy and microscopy (AFM) are invaluable tools to characterize nanostructures and biological systems. Most experiments, including state-of-the-art images of molecular bonds, are achieved by driving probes at their mechanical resonance. This resonance reaches the MHz for the fastest AFM micro-cantilevers, with typical motion amplitude of a few nanometres. Next-generation invest…
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Atomic force spectroscopy and microscopy (AFM) are invaluable tools to characterize nanostructures and biological systems. Most experiments, including state-of-the-art images of molecular bonds, are achieved by driving probes at their mechanical resonance. This resonance reaches the MHz for the fastest AFM micro-cantilevers, with typical motion amplitude of a few nanometres. Next-generation investigations of molecular scale dynamics, including faster force imaging and higher-resolution spectroscopy of dissipative interactions, require more bandwidth and vibration amplitudes below interatomic distance, for non-perturbative short-range tip-matter interactions. Probe frequency is a key parameter to improve bandwidth while reducing Brownian motion, allowing large signal-to-noise for exquisite resolution. Optomechanical resonators reach motion detection at 10^(-18) m.(Hz)^(-1/2), while coupling light to bulk vibration modes whose frequencies largely surpass those of cantilevers. Here we introduce an optically operated resonating optomechanical atomic force probe of frequency 2 decades above the fastest functional AFM cantilevers while Brownian motion is 4 orders below. Based on a Silicon-On-Insulator technology, the probe demonstrates high-speed sensing of contact and non-contact interactions with sub-picometre driven motion, breaking open current locks for faster and finer atomic force spectroscopy.
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Submitted 15 October, 2018;
originally announced October 2018.
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Microscopic nanomechanical dissipation in gallium arsenide resonators
Authors:
Mehdi Hamoumi,
Pierre Etienne Allain,
William Hease,
Laurence Morgenroth,
Bruno Gérard,
Aristide Lemaître,
Giuseppe Leo,
Ivan Favero
Abstract:
We report on a systematic study of nanomechanical dissipation in high-frequency (approximatively 300 MHz) gallium arsenide optomechanical disk resonators, in conditions where clam** and fluidic losses are negligible. Phonon-phonon interactions are shown to contribute with a loss background fading away at cryogenic temperatures (3 K). Atomic layer deposition of alumina at the surface modifies the…
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We report on a systematic study of nanomechanical dissipation in high-frequency (approximatively 300 MHz) gallium arsenide optomechanical disk resonators, in conditions where clam** and fluidic losses are negligible. Phonon-phonon interactions are shown to contribute with a loss background fading away at cryogenic temperatures (3 K). Atomic layer deposition of alumina at the surface modifies the quality factor of resonators, pointing towards the importance of surface dissipation. The temperature evolution is accurately fitted by two-level systems models, showing that nanomechanical dissipation in gallium arsenide resonators directly connects to their microscopic properties. Two-level systems, notably at surfaces, appear to rule the dam** and fluctuations of such high-quality crystalline nanomechanical devices, at all temperatures from 3 to 300K.
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Submitted 27 January, 2018;
originally announced January 2018.
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Color Atomic Force Microscopy with on-the-fly Morse parameters map**
Authors:
Pierre Etienne Allain,
Denis Damiron,
Yuta Miyazaki,
Kohei Kaminishi,
Flavius Vasile Pop,
Dai Kobayashi,
Naruo Sasaki,
Hideki Kawakatsu
Abstract:
Atomic Force Microscopy has enabled 2D imaging at the sub-molecular level, and 3D map** of the potential field. However, fast identification of the surface still remains a challenging topic. In this paper, as a step towards implementation of such function, we introduce a control scheme and mathematical treatment of the acquired data that enable retrieval of essential information characterizing t…
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Atomic Force Microscopy has enabled 2D imaging at the sub-molecular level, and 3D map** of the potential field. However, fast identification of the surface still remains a challenging topic. In this paper, as a step towards implementation of such function, we introduce a control scheme and mathematical treatment of the acquired data that enable retrieval of essential information characterizing the potential field, leading to fast acquisition of images with chemical contrast. The control scheme is based on tip sample distance modulation at an angular frequency of $ω$, and null control of the ${1ω}$ component of the self excitation frequency of the oscillator. It is demonstrated that the control is robust in UHV for a frequency well as small as a few Hz/MHz, and that the mathematical treatment results in satisfactory identification of the potential field. Morse potential is chosen as a case study for identifying the Morse parameters per pixel. Atomic features with similar topography were distinguished by differences in the parameters. The decay length parameter was resolved with a resolution of 10 pm. The method was demonstrated on quenched Silicon at a scan rate comparable to normal imaging.
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Submitted 13 September, 2016; v1 submitted 14 July, 2015;
originally announced July 2015.
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Klein tunneling in graphene: optics with massless electrons
Authors:
P. E. Allain,
J. N. Fuchs
Abstract:
This article provides a pedagogical review on Klein tunneling in graphene, i.e. the peculiar tunneling properties of two-dimensional massless Dirac electrons. We consider two simple situations in detail: a massless Dirac electron incident either on a potential step or on a potential barrier and use elementary quantum wave mechanics to obtain the transmission probability. We emphasize the connectio…
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This article provides a pedagogical review on Klein tunneling in graphene, i.e. the peculiar tunneling properties of two-dimensional massless Dirac electrons. We consider two simple situations in detail: a massless Dirac electron incident either on a potential step or on a potential barrier and use elementary quantum wave mechanics to obtain the transmission probability. We emphasize the connection to related phenomena in optics, such as the Snell-Descartes law of refraction, total internal reflection, Fabry-Pérot resonances, negative refraction index materials (the so called meta-materials), etc. We also stress that Klein tunneling is not a genuine quantum tunneling effect as it does not necessarily involve passing through a classically forbidden region via evanescent waves. A crucial role in Klein tunneling is played by the conservation of (sublattice) pseudo-spin, which is discussed in detail. A major consequence is the absence of backscattering at normal incidence, of which we give a new shorten proof. The current experimental status is also thoroughly reviewed. The appendix contains the discussion of a one-dimensional toy model that clearly illustrates the difference in Klein tunneling between mono- and bi-layer graphene.
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Submitted 17 August, 2011; v1 submitted 29 April, 2011;
originally announced April 2011.
