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Thermal conductivity of CaF$_{2}$ at high pressure
Authors:
Somayeh Faraji,
S. Mehdi Vaez Allaei,
Maximilian Amsler
Abstract:
We study the thermal transport properties of three CaF$_{2}$ polymorphs up to a pressure of 30 GPa using first-principle calculations and an interatomic potential based on machine learning. The lattice thermal conductivity $κ$ is computed by iteratively solving the linearized Boltzmann transport equation (BTE) and by taking into account three-phonon scattering. Overall, $κ$ increases nearly linear…
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We study the thermal transport properties of three CaF$_{2}$ polymorphs up to a pressure of 30 GPa using first-principle calculations and an interatomic potential based on machine learning. The lattice thermal conductivity $κ$ is computed by iteratively solving the linearized Boltzmann transport equation (BTE) and by taking into account three-phonon scattering. Overall, $κ$ increases nearly linearly with pressure, and we show that the recently discovered $δ$-phase with $P\bar{6}2m$ symmetry and the previously known $γ$-CaF$_{2}$ high-pressure phase have significantly lower lattice thermal conductivities than the ambient-thermodynamic cubic fluorite ($Fm\bar{3}m$) structure. We argue that the lower $κ$ of these two high-pressure phases stems mainly due to a lower contribution of acoustic modes to $κ$ as a result of their small group velocities. We further show that the phonon mean free paths are very short for the $P\bar{6}2m$ and $Pnma$ structures at high temperatures, and resort to the Cahill-Pohl model to assess the lower limit of thermal conductivity in these domains.
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Submitted 12 February, 2021;
originally announced February 2021.
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Ultra-high lattice thermal conductivity and the effect of pressure in superhard hexagonal BC2N
Authors:
Safoura Nayeb Sadeghi,
S. Mehdi Vaez Allaei,
Mona Zebarjadi,
Keivan Esfarjani
Abstract:
Hexagonal BC$_{2}$N is a superhard material recently identified to be comparable to or even harder than cubic boron nitride (c-BN) due the full $sp^3$ bonding character and the higher number of C-C and B-N bonds compared to C-N and B-C.Using a first-principles approach to calculate force constants and an exact numerical solution to the phonon Boltzmann equation, we show that BC$_{2}$N has a high l…
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Hexagonal BC$_{2}$N is a superhard material recently identified to be comparable to or even harder than cubic boron nitride (c-BN) due the full $sp^3$ bonding character and the higher number of C-C and B-N bonds compared to C-N and B-C.Using a first-principles approach to calculate force constants and an exact numerical solution to the phonon Boltzmann equation, we show that BC$_{2}$N has a high lattice thermal conductivity exceeding that of c-BN owing to the strong C-C and B-N bonds, which produce high phonon frequencies as well as high acoustic velocities. The existence of large group velocities in the optical branches is responsible for its large thermal conductivity. Its coefficient of thermal expansion (CTE) is found to vary from 2.6$\times$10$^{-6}$/K at room temperature to almost 5$\times$ 10$^{-6}$/K at 1000K. The combination of large thermal conductivity and a good CTE match with that of Si, makes BC$_2$N a promising material for use in thermal management and high-power electronics applications. We show that the application of compressive strain increases the thermal conductivity significantly. This enhancement results from the overall increased frequency scale with pressure, which makes acoustic and optic velocities higher, and weaker phonon-phonon scattering rates.
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Submitted 27 March, 2020;
originally announced March 2020.
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Towards a simplified description of thermoelectric materials: Accuracy of approximate density functional theory for phonon dispersions
Authors:
Thomas A. Niehaus,
Sigismund T. A. G. Melissen,
Balint Aradi,
S. Mehdi Vaez Allaei
Abstract:
We calculate the phonon-dispersion relations of several two-dimensional materials and diamond using the density-functional based tight-binding approach (DFTB). Our goal is to verify if this numerically efficient method provides sufficiently accurate phonon frequencies and group velocities to compute reliable thermoelectric properties. To this end, the results are compared to available DFT results…
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We calculate the phonon-dispersion relations of several two-dimensional materials and diamond using the density-functional based tight-binding approach (DFTB). Our goal is to verify if this numerically efficient method provides sufficiently accurate phonon frequencies and group velocities to compute reliable thermoelectric properties. To this end, the results are compared to available DFT results and experimental data. To quantify the accuracy for a given band, a descriptor is introduced that summarizes contributions to the lattice conductivity that are available already in the harmonic approximation. We find that the DFTB predictions depend strongly on the employed repulsive pair-potentials, which are an important prerequisite of this method. For carbon-based materials, accurate pair-potentials are identified and lead to errors of the descriptor that are of the same order as differences between different local and semi-local DFT approaches.
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Submitted 2 May, 2019; v1 submitted 15 April, 2019;
originally announced April 2019.
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Inter-layer and Intra-layer Heat Transfer in Bilayer/Monolayer Graphene van der Waals Heterostructure: Is There a Kapitza Resistance Analogous?
Authors:
Ali Rajabpour,
Zheyong Fan,
S. Mehdi Vaez Allaei
Abstract:
Van der Waals heterostructures have exhibited interesting physical properties. In this paper, heat transfer in hybrid coplanar bilayer/monolayer (BL-ML) graphene, as a model layered van der Waals heterostructure, was studied using non-equilibrium molecular dynamics (MD) simulations. Temperature profile and inter- and intra-layer heat fluxes of the BL-ML graphene indicated that, there is no fully d…
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Van der Waals heterostructures have exhibited interesting physical properties. In this paper, heat transfer in hybrid coplanar bilayer/monolayer (BL-ML) graphene, as a model layered van der Waals heterostructure, was studied using non-equilibrium molecular dynamics (MD) simulations. Temperature profile and inter- and intra-layer heat fluxes of the BL-ML graphene indicated that, there is no fully developed thermal equilibrium between layers and the drop in average temperature profile at the step-like BL-ML interface is not attributable to the effect of Kapitza resistance. By increasing the length of the system up to 1 $μ$m in the studied MD simulations, the thermally non-equilibrium region was reduced to a small area near the step-like interface. All MD results were compared to a continuum model and a good match was observed between the two approaches. Our results provide a useful understanding of heat transfer in nano- and micro-scale layered 2D materials and van der Waals heterostructures.
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Submitted 24 November, 2017;
originally announced November 2017.
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Kapitza thermal resistance across individual grain boundaries in graphene
Authors:
Khatereh Azizi,
Petri Hirvonen,
Zheyong Fan,
Ari Harju,
Ken R Elder,
Tapio Ala-Nissila,
S Mehdi Vaez Allaei
Abstract:
We study heat transport across individual grain boundaries in suspended monolayer graphene using extensive classical molecular dynamics (MD) simulations. We construct bicrystalline graphene samples containing grain boundaries with symmetric tilt angles using the two-dimensional phase field crystal method and then relax the samples with MD. The corresponding Kapitza resistances are then computed us…
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We study heat transport across individual grain boundaries in suspended monolayer graphene using extensive classical molecular dynamics (MD) simulations. We construct bicrystalline graphene samples containing grain boundaries with symmetric tilt angles using the two-dimensional phase field crystal method and then relax the samples with MD. The corresponding Kapitza resistances are then computed using nonequilibrium MD simulations. We find that the Kapitza resistance depends strongly on the tilt angle and shows a clear correlation with the average density of defects in a given grain boundary, but is not strongly correlated with the grain boundary line tension. We also show that quantum effects are significant in quantitative determination of the Kapitza resistance by applying the mode-by-mode quantum correction to the classical MD data. The corrected data are in good agreement with quantum mechanical Landauer-Bütticker calculations.
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Submitted 27 September, 2017;
originally announced September 2017.
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Multiscale modeling of polycrystalline graphene: A comparison of structure and defect energies of realistic samples from phase field crystal models
Authors:
Petri Hirvonen,
Mikko M. Ervasti,
Zheyong Fan,
Morteza Jalalvand,
Matthew Seymour,
S. Mehdi Vaez Allaei,
Nikolas Provatas,
Ari Harju,
Ken R. Elder,
Tapio Ala-Nissila
Abstract:
We extend the phase field crystal (PFC) framework to quantitative modeling of polycrystalline graphene. PFC modeling is a powerful multiscale method for finding the ground state configurations of large realistic samples that can be further used to study their mechanical, thermal or electronic properties. By fitting to quantum-mechanical density functional theory (DFT) calculations, we show that th…
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We extend the phase field crystal (PFC) framework to quantitative modeling of polycrystalline graphene. PFC modeling is a powerful multiscale method for finding the ground state configurations of large realistic samples that can be further used to study their mechanical, thermal or electronic properties. By fitting to quantum-mechanical density functional theory (DFT) calculations, we show that the PFC approach is able to predict realistic formation energies and defect structures of grain boundaries. We provide an in-depth comparison of the formation energies between PFC, DFT and molecular dynamics (MD) calculations. The DFT and MD calculations are initialized using atomic configurations extracted from PFC ground states. Finally, we use the PFC approach to explicitly construct large realistic polycrystalline samples and characterize their properties using MD relaxation to demonstrate their quality.
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Submitted 22 June, 2016; v1 submitted 12 May, 2016;
originally announced May 2016.
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Highly Anistoropic Thermal Conductivity of Arsenene: An ab initio Study
Authors:
M. Zeraati,
S. M. Vaez Allaei,
I. Abdolhosseini Sarsari,
M. Pourfath,
D. Donadio
Abstract:
Elemental 2D materials exhibit intriguing heat transport and phononic properties. Here we have investigated the lattice thermal conductivity of newly proposed arsenene, the 2D honeycomb structure of arsenic, using {\it ab initio} calculations. Solving the Boltzmann transport equation for phonons, we predict a highly anisotropic thermal conductivity, of $30.4$ and $7.8$ W/mK along the zigzag and ar…
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Elemental 2D materials exhibit intriguing heat transport and phononic properties. Here we have investigated the lattice thermal conductivity of newly proposed arsenene, the 2D honeycomb structure of arsenic, using {\it ab initio} calculations. Solving the Boltzmann transport equation for phonons, we predict a highly anisotropic thermal conductivity, of $30.4$ and $7.8$ W/mK along the zigzag and armchair directions, respectively at room temperature. Our calculations reveal that phonons with mean free paths between $20$ nm and $1$ $μ$m provide the main contribution to the large thermal conductivity in the zig-zag direction, mean free paths of phonons contributing to heat transport in the armchair directions range between $20$ and $100$ nm. The obtained low and anisotropic thermal conductivity, and feasibility of synthesis, in addition to other reports on high electron mobility, make arsenene a promising material for a variety of applications, including thermal management and thermoelectric devices.
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Submitted 8 August, 2015;
originally announced August 2015.
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Crossing Statistics of Anisotropic Stochastic Surface
Authors:
M. Ghasemi Nezhadhaghighi,
S. M. S. Movahed,
T. Yasseri,
S. M. Vaez Allaei
Abstract:
In this paper, we propose crossing statistics and its generalization, as a new framework to characterize the anisotropy in a 2D field, e.g. height on a surface, extendable to higher dimensions. By measuring $ν^+$, the number of up-crossing (crossing points with positive slope at a given threshold of height ($α$)), and $N_{tot}$ (the generalized roughness function), it is possible to distinguish th…
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In this paper, we propose crossing statistics and its generalization, as a new framework to characterize the anisotropy in a 2D field, e.g. height on a surface, extendable to higher dimensions. By measuring $ν^+$, the number of up-crossing (crossing points with positive slope at a given threshold of height ($α$)), and $N_{tot}$ (the generalized roughness function), it is possible to distinguish the nature of anisotropy, rotational invariance and Gaussianity of any given surface. For the case of anisotropic correlated self- or multi-affine surfaces (even with different correlation lengths in various directions and/or directional scaling exponents), we analytically derive some relations between $ν^+$ and $N_{tot}$ with corresponding scaling parameters. The method systematically distinguishes the directions of anisotropy, at $3σ$ confidence interval using P-value statistics. After applying a typical method in determining the corresponding scaling exponents in identified anisotropic directions, we are able to determine the kind and ratio of correlation length anisotropy. To demonstrate capability and accuracy of the method, as well validity of analytical relations, our proposed measures are calculated on synthetic stochastic rough interfaces and rough interfaces generated from simulation of ion etching. There are good consistencies between analytical and numerical computations. The proposed algorithm can be mounted with a simple software on various instruments for surface analysis and characterization, such as AFM, STM and etc.
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Submitted 19 November, 2016; v1 submitted 6 August, 2015;
originally announced August 2015.
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Universality and conformal non-invariance in self-affine rough surfaces
Authors:
S. Hosseinabadi,
M. A. Rajabpour,
M. Sadegh Movahed,
S. M. Vaez Allaei
Abstract:
We show numerically that the roughness and growth exponents of a wide range of rough surfaces, such as random deposition with relaxation (RDR), ballistic deposition (BD) and restricted solid-on-solid model (RSOS), are independent of the underlying regular (square, triangular, honeycomb) or random (Voronoi) lattices. In addition we show that the universality holds also at the level of statistical p…
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We show numerically that the roughness and growth exponents of a wide range of rough surfaces, such as random deposition with relaxation (RDR), ballistic deposition (BD) and restricted solid-on-solid model (RSOS), are independent of the underlying regular (square, triangular, honeycomb) or random (Voronoi) lattices. In addition we show that the universality holds also at the level of statistical properties of the iso-height lines on different lattices. This universality is revealed by calculating the fractal dimension, loop correlation exponent and the length distribution exponent of the individual contours. We also indicate that the hyperscaling relations are valid for the iso-height lines of all the studied Gaussian and non-Gaussian self-affine rough surfaces. Finally using the direct method of Langlands et.al we show that the contour lines of the rough surfaces are not conformally invariant except when we have simple Gaussian free field theory with zero roughness exponent.
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Submitted 8 April, 2013;
originally announced April 2013.
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Geometrical exponents of contour loops on synthetic multifractal rough surfaces: multiplicative hierarchical cascade p-model
Authors:
S. Hosseinabadi,
M. A. Rajabpour,
M. Sadegh Movahed,
S. M. Vaez Allaei
Abstract:
In this paper, we study many geometrical properties of contour loops to characterize the morphology of synthetic multifractal rough surfaces, which are generated by multiplicative hierarchical cascading processes. To this end, two different classes of multifractal rough surfaces are numerically simulated. As the first group, singular measure multifractal rough surfaces are generated by using the…
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In this paper, we study many geometrical properties of contour loops to characterize the morphology of synthetic multifractal rough surfaces, which are generated by multiplicative hierarchical cascading processes. To this end, two different classes of multifractal rough surfaces are numerically simulated. As the first group, singular measure multifractal rough surfaces are generated by using the $p$ model. The smoothened multifractal rough surface then is simulated by convolving the first group with a so-called Hurst exponent, $H^*$ . The generalized multifractal dimension of isoheight lines (contours), $D(q)$, correlation exponent of contours, $x_l$, cumulative distributions of areas, $ξ$, and perimeters, $η$, are calculated for both synthetic multifractal rough surfaces. Our results show that for both mentioned classes, hyperscaling relations for contour loops are the same as that of monofractal systems. In contrast to singular measure multifractal rough surfaces, $H^*$ plays a leading role in smoothened multifractal rough surfaces. All computed geometrical exponents for the first class depend not only on its Hurst exponent but also on the set of $p$ values. But in spite of multifractal nature of smoothened surfaces (second class), the corresponding geometrical exponents are controlled by $H^*$, the same as what happens for monofractal rough surfaces.
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Submitted 17 March, 2012; v1 submitted 26 July, 2011;
originally announced July 2011.
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Scaling Relations for Contour Lines of Rough Surfaces
Authors:
M. A. Rajabpour,
S. M. Vaez Allaei
Abstract:
Equilibrium and non-equilibrium growth phenomena, e.g., surface growth, generically yields self-affine distributions. Analysis of statistical properties of these distributions appears essential in understanding statistical mechanics of underlying phenomena. Here, we analyze scaling properties of the cumulative distribution of iso-height loops (i.e., contour lines) of rough self-affine surfaces i…
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Equilibrium and non-equilibrium growth phenomena, e.g., surface growth, generically yields self-affine distributions. Analysis of statistical properties of these distributions appears essential in understanding statistical mechanics of underlying phenomena. Here, we analyze scaling properties of the cumulative distribution of iso-height loops (i.e., contour lines) of rough self-affine surfaces in terms of loop area and system size. Inspired by the Coulomb gas methods, we find the generating function of the area of the loops. Interestingly, we find that, after sorting loops with respect to their perimeters, Zipf-like scaling relations hold for ranked loops. Numerical simulations are also provided in order to demonstrate the proposed scaling relations.
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Submitted 5 July, 2009;
originally announced July 2009.
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Localization of elastic waves in heterogeneous media with off-diagonal disorder and long-range correlations
Authors:
F. Shahbazi,
Alireza Bahraminasab,
S. Mehdi Vaez Allaei,
Muhammad Sahimi,
M. Reza Rahimi Tabar
Abstract:
Using the Martin-Siggia-Rose method, we study propagation of acoustic waves in strongly heterogeneous media which are characterized by a broad distribution of the elastic constants. Gaussian-white distributed elastic constants, as well as those with long-range correlations with non-decaying power-law correlation functions, are considered. The study is motivated in part by a recent discovery that…
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Using the Martin-Siggia-Rose method, we study propagation of acoustic waves in strongly heterogeneous media which are characterized by a broad distribution of the elastic constants. Gaussian-white distributed elastic constants, as well as those with long-range correlations with non-decaying power-law correlation functions, are considered. The study is motivated in part by a recent discovery that the elastic moduli of rock at large length scales may be characterized by long-range power-law correlation functions. Depending on the disorder, the renormalization group (RG) flows exhibit a transition to localized regime in {\it any} dimension. We have numerically checked the RG results using the transfer-matrix method and direct numerical simulations for one- and two-dimensional systems, respectively.
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Submitted 25 April, 2005;
originally announced April 2005.
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Elastic properties of small-world spring networks
Authors:
A. Ramezanpour,
S. M. Vaez Allaei
Abstract:
We construct small-world spring networks based on a one dimensional chain and study its static and quasistatic behavior with respect to external forces. Regular bonds and shortcuts are assigned linear springs of constant $k$ and $k'$, respectively. In our models, shortcuts can only stand extensions less than $δ_c$ beyond which they are removed from the network. First we consider the simple cases…
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We construct small-world spring networks based on a one dimensional chain and study its static and quasistatic behavior with respect to external forces. Regular bonds and shortcuts are assigned linear springs of constant $k$ and $k'$, respectively. In our models, shortcuts can only stand extensions less than $δ_c$ beyond which they are removed from the network. First we consider the simple cases of a hierarchical small-world network and a complete network. In the main part of this paper we study random small-world networks (RSWN) in which each pair of nodes is connected by a shortcut with probability $p$. We obtain a scaling relation for the effective stiffness of RSWN when $k=k'$. In this case the extension distribution of shortcuts is scale free with the exponent -2. There is a strong positive correlation between the extension of shortcuts and their betweenness. We find that the chemical end-to-end distance (CEED) could change either abruptly or continuously with respect to the external force. In the former case, the critical force is determined by the average number of shortcuts emanating from a node. In the latter case, the distribution of changes in CEED obeys power laws of the exponent $-α$ with $α\le 3/2$.
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Submitted 21 December, 2005; v1 submitted 9 March, 2005;
originally announced March 2005.
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Stochastic Analysis and Regeneration of Rough Surfaces
Authors:
G. R. Jafari,
S. M. Fazeli,
F. Ghasemi,
S. M. Vaez Allaei,
M. Reza Rahimi Tabar,
A. Iraji zad,
G. Kavei
Abstract:
We investigate Markov property of rough surfaces. Using stochastic analysis we characterize the complexity of the surface roughness by means of a Fokker-Planck or Langevin equation. The obtained Langevin equation enables us to regenerate surfaces with similar statistical properties compared with the observed morphology by atomic force microscopy.
We investigate Markov property of rough surfaces. Using stochastic analysis we characterize the complexity of the surface roughness by means of a Fokker-Planck or Langevin equation. The obtained Langevin equation enables us to regenerate surfaces with similar statistical properties compared with the observed morphology by atomic force microscopy.
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Submitted 18 December, 2003;
originally announced December 2003.
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Height Fluctuations and Intermittency of $V_2 O_5$ Films by Atomic Force Microscopy
Authors:
A. Iraji zad,
G. Kavei,
M. Reza Rahimi Tabar,
S. M. Vaez Allaei
Abstract:
The spatial scaling law and intermittency of the $V_2 O_5$ surface roughness by atomic force microscopy has been investigated. The intermittency of the height fluctuations has been checked by two different methods, first, by measuring scaling exponent of q-th moment of height-difference fluctuations i.e. $C_q = < |h(x_1) - h(x_2)|^{q} >$ and the second, by defining generating function $Z(q,N)$ a…
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The spatial scaling law and intermittency of the $V_2 O_5$ surface roughness by atomic force microscopy has been investigated. The intermittency of the height fluctuations has been checked by two different methods, first, by measuring scaling exponent of q-th moment of height-difference fluctuations i.e. $C_q = < |h(x_1) - h(x_2)|^{q} >$ and the second, by defining generating function $Z(q,N)$ and generalized multi-fractal dimension $D_q$. These methods predict that there is no intermittency in the height fluctuations. The observed roughness and dynamical exponents can be explained by the numerical simulation on the basis of forced Kuramoto-Sivashinsky equation.
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Submitted 2 June, 2003;
originally announced June 2003.
