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Reflectivity and PDE of VUV4 Hamamatsu SiPMs in Liquid Xenon
Authors:
P. Nakarmi,
I. Ostrovskiy,
A. K. Soma,
F. Retiere,
S. Al Kharusi,
M. Alfaris,
G. Anton,
I. J. Arnquist,
I. Badhrees,
P. S. Barbeau,
D. Beck,
V. Belov,
T. Bhatta,
J. Blatchford,
P. A. Breur,
J. P. Brodsky,
E. Brown,
T. Brunner,
S. Byrne Mamahit,
E. Caden,
G. F. Cao,
L. Cao,
C. Chambers,
B. Chana,
S. A. Charlebois
, et al. (130 additional authors not shown)
Abstract:
Understanding reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE. Little information is currently a…
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Understanding reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE. Little information is currently available about reflectivity and PDE in liquid noble gases, because such measurements are difficult to conduct in a cryogenic environment and at short enough wavelengths. Here we report a measurement of specular reflectivity and relative PDE of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 micrometer micro-cells conducted with xenon scintillation light (~175 nm) in liquid xenon. The specular reflectivity at 15 deg. incidence of three samples of VUV4 SiPMs is found to be 30.4+/-1.4%, 28.6+/-1.3%, and 28.0+/-1.3%, respectively. The PDE at normal incidence differs by +/-8% (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was also measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases. This is the first measurement of an angular dependence of PDE and reflectivity of a SiPM in liquid xenon.
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Submitted 24 December, 2019; v1 submitted 14 October, 2019;
originally announced October 2019.
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Characterization of the Hamamatsu VUV4 MPPCs for nEXO
Authors:
G. Gallina,
P. Giampa,
F. Retiere,
J. Kroeger,
G. Zhang,
M. Ward,
P. Margetak,
G. Lic,
T. Tsang,
L. Doria,
S. Al Kharusi,
M. Alfaris,
G. Anton,
I. J. Arnquist,
I. Badhrees,
P. S. Barbeau,
D. Beck,
V. Belov,
T. Bhatta,
J. Blatchford,
J. P. Brodsky,
E. Brown,
T. Brunner,
G. F. Cao,
L. Cao
, et al. (126 additional authors not shown)
Abstract:
In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency…
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In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency (PDE) were measured in a dedicated setup at TRIUMF. SiPMs were characterized in the range $163 \text{ } \text{K} \leq \text{T}\leq 233 \text{ } \text{K}$. At an over voltage of $3.1\pm0.2$ V and at $\text{T}=163 \text{ }\text{K}$ we report a number of Correlated Avalanches (CAs) per pulse in the $1 \upmu\text{s}$ interval following the trigger pulse of $0.161\pm0.005$. At the same settings the Dark-Noise (DN) rate is $0.137\pm0.002 \text{ Hz/mm}^{2}$. Both the number of CAs and the DN rate are within nEXO specifications. The PDE of the Hamamatsu VUV4 was measured for two different devices at $\text{T}=233 \text{ }\text{K}$ for a mean wavelength of $189\pm7\text{ nm}$. At $3.6\pm0.2$ V and $3.5\pm0.2$ V of over voltage we report a PDE of $13.4\pm2.6\text{ }\%$ and $11\pm2\%$, corresponding to a saturation PDE of $14.8\pm2.8\text{ }\%$ and $12.2\pm2.3\%$, respectively. Both values are well below the $24\text{ }\%$ saturation PDE advertised by Hamamatsu. More generally, the second device tested at $3.5\pm0.2$ V of over voltage is below the nEXO PDE requirement. The first one instead yields a PDE that is marginally close to meeting the nEXO specifications. This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBK-LF SiPMs for the final design of the nEXO detector.
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Submitted 7 June, 2019; v1 submitted 8 March, 2019;
originally announced March 2019.
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nEXO Pre-Conceptual Design Report
Authors:
nEXO Collaboration,
S. Al Kharusi,
A. Alamre,
J. B. Albert,
M. Alfaris,
G. Anton,
I. J. Arnquist,
I. Badhrees,
P. S. Barbeau,
D. Beck,
V. Belov,
T. Bhatta,
F. Bourque,
J. P. Brodsky,
E. Brown,
T. Brunner,
A. Burenkov,
G. F. Cao,
L. Cao,
W. R. Cen,
C. Chambers,
S. A. Charlebois,
M. Chiu,
B. Cleveland,
R. Conley
, et al. (149 additional authors not shown)
Abstract:
The projected performance and detector configuration of nEXO are described in this pre-Conceptual Design Report (pCDR). nEXO is a tonne-scale neutrinoless double beta ($0νββ$) decay search in $^{136}$Xe, based on the ultra-low background liquid xenon technology validated by EXO-200. With $\simeq$ 5000 kg of xenon enriched to 90% in the isotope 136, nEXO has a projected half-life sensitivity of app…
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The projected performance and detector configuration of nEXO are described in this pre-Conceptual Design Report (pCDR). nEXO is a tonne-scale neutrinoless double beta ($0νββ$) decay search in $^{136}$Xe, based on the ultra-low background liquid xenon technology validated by EXO-200. With $\simeq$ 5000 kg of xenon enriched to 90% in the isotope 136, nEXO has a projected half-life sensitivity of approximately $10^{28}$ years. This represents an improvement in sensitivity of about two orders of magnitude with respect to current results. Based on the experience gained from EXO-200 and the effectiveness of xenon purification techniques, we expect the background to be dominated by external sources of radiation. The sensitivity increase is, therefore, entirely derived from the increase of active mass in a monolithic and homogeneous detector, along with some technical advances perfected in the course of a dedicated R&D program. Hence the risk which is inherent to the construction of a large, ultra-low background detector is reduced, as the intrinsic radioactive contamination requirements are generally not beyond those demonstrated with the present generation $0νββ$ decay experiments. Indeed, most of the required materials have been already assayed or reasonable estimates of their properties are at hand. The details described herein represent the base design of the detector configuration as of early 2018. Where potential design improvements are possible, alternatives are discussed.
This design for nEXO presents a compelling path towards a next generation search for $0νββ$, with a substantial possibility to discover physics beyond the Standard Model.
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Submitted 13 August, 2018; v1 submitted 28 May, 2018;
originally announced May 2018.
