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Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride
Authors:
Vitaliy Babenko,
Ye Fan,
Vlad-Petru Veigang-Radulescu,
Barry Brennan,
Andrew J. Pollard,
Oliver Burton,
Jack A. Alexander-Webber,
Robert S. Weatherup,
Barbara Canto,
Martin Otto,
Daniel Neumaier,
Stephan Hofmann
Abstract:
Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Cost-effective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron…
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Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Cost-effective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron foils for the catalytic chemical vapour deposition (CVD) of h BN and report on the significant role of bulk dissolved species in h-BN CVD, and specifically, the balance between dissolved oxygen and carbon. A simple pre-growth conditioning step of the iron foils enables us to tailor an error-tolerant scalable CVD process to give exceptionally large h-BN monolayer domains. We also develop a facile method for the improved transfer of as-grown h-BN away from the iron surface by means of the controlled humidity oxidation and subsequent rapid etching of a thin interfacial iron oxide; thus, avoiding the impurities from the bulk of the foil. We demonstrate wafer-scale (2 inch) production and utilise this h-BN as a protective layer for graphene towards integrated (opto) electronic device fabrication.
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Submitted 26 November, 2020;
originally announced November 2020.
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Independence of Optical Absorption on Auger Ionization in Single-Walled Carbon Nanotubes Revealed by Ultrafast e-h Photodo**
Authors:
Mitchell D. Anderson,
Meghan N. Beattie,
Jack A. Alexander-Webber,
Robin J. Nicholas,
James M. Fraser
Abstract:
Auger-ionized carriers in a one-dimensional semiconductor are predicted to result in a strong band-gap renormalization. Isolated single-walled carbon nanotubes (SWCNT) under high-intensity laser irradiation exhibit strong nonlinear photoluminescence (PL) due to exciton-exciton annihilation (EEA). The presence of exciton disassociation during the rapid Auger-ionization caused by EEA would lead to a…
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Auger-ionized carriers in a one-dimensional semiconductor are predicted to result in a strong band-gap renormalization. Isolated single-walled carbon nanotubes (SWCNT) under high-intensity laser irradiation exhibit strong nonlinear photoluminescence (PL) due to exciton-exciton annihilation (EEA). The presence of exciton disassociation during the rapid Auger-ionization caused by EEA would lead to a strong nonlinear absorption. By simultaneously measuring SWCNT PL and optical absorption of isolated SWCNT clusters in the PL saturation regime, we give evidence that Auger-ionized excitons do not disassociate but remain bound.
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Submitted 17 August, 2015;
originally announced August 2015.
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Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements
Authors:
J. Huang,
J. A. Alexander-Webber,
A. M. R. Baker,
T. J. B. M. Janssen,
A. Tzalenchuk,
V. Antonov,
T. Yager,
S. Lara-Avila,
S. Kubatkin,
R. Yakimova,
R. J. Nicholas
Abstract:
We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder…
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We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2 $\sim$ 31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be $3.0 \sim 9.1 \times 10^{10}$ cm$^{-2}$ for our samples. An asymmetry in the electron/hole scattering is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder potential, in good agreement with quantum-mechanical numerical calculations.
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Submitted 14 May, 2015;
originally announced May 2015.
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Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene
Authors:
J. Huang,
J. A. Alexander-Webber,
T. J. B. M. Janssen,
A. Tzalenchuk,
T. Yager,
S. Lara-Avila,
S. Kubatkin,
R. L. Myers-Ward,
V. D. Wheeler,
D. K. Gaskill,
R. J. Nicholas
Abstract:
Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interaction…
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Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence $n_e^{-1.5}$ in the scaling of the $T^4$ power law is observed in bilayer graphene, in contrast to the $n_e^{-0.5}$ dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems.
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Submitted 22 September, 2014;
originally announced September 2014.
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Weak localization scattering lengths in epitaxial, and CVD graphene
Authors:
A. M. R. Baker,
J. A. Alexander-Webber,
T. Altebaeumer,
T. J. B. M. Janssen,
A. Tzalenchuk,
S. Lara-Avila,
S. Kubatkin,
R. Yakimova,
C. -T. Lin,
L. -J. Li,
R. J. Nicholas
Abstract:
Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L…
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Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L$_\varphi$, L$_i$, and L$_*$ on carrier density. We find no significant carrier dependence for L$_\varphi$, a weak decrease for L$_i$ with increasing carrier density just beyond a large standard error, and a n$^{-\frac{1}{4}}$ dependence for L$_*$. We demonstrate that currents as low as 0.01\,nA are required in smaller devices to avoid hot-electron artefacts in measurements of the quantum corrections to conductivity.
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Submitted 10 May, 2013;
originally announced May 2013.
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Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene
Authors:
J. A. Alexander-Webber,
A. M. R. Baker,
T. J. B. M. Janssen,
A. Tzalenchuk,
S. Lara-Avila,
S. Kubatkin,
R. Yakimova,
B. A. Piot,
D. K. Maude,
R. J. Nicholas
Abstract:
We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$)…
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We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\propto B^{3/2}$ and $T_c \propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $ν=2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density.
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Submitted 17 April, 2013;
originally announced April 2013.
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Energy loss rates of hot Dirac fermions in epitaxial, exfoliated and CVD graphene
Authors:
A. M. R. Baker J. A. Alexander-Webber,
T. Altebaeumer,
S. D. McMullan,
T. J. B. M. Janssen,
A. Tzalenchuk,
S. Lara-Avila,
S. Kubatkin,
R. Yakimova,
C. -T Lin,
L. -J Li,
R. J. Nicholas
Abstract:
Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, wi…
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Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by $\sim$40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of $T_{e}^4$ at low temperatures and depend weakly on carrier density $\propto$ n$^{-1/2}$ evidence for enhancement of the energy loss rate due to disorder in CVD samples.
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Submitted 19 December, 2012;
originally announced December 2012.
