Showing 1–5 of 5 results for author: Alema, F

Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Authors: Jiarui Gong, Jie Zhou, Ashok Dheenan, Moheb Sheikhi, Fikadu Alema, Tien Khee Ng, Shubhra S. Pasayat, Qiaoqiang Gan, Andrei Osinsky, Vincent Gambin, Chirag Gupta, Siddharth Rajan, Boon S. Ooi, Zhenqiang Ma

Abstract: Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and vi… ▽ More Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $β$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $β$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$β$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$β$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $β$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$β$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructures. △ Less

Submitted 1 December, 2023; originally announced December 2023.

Comments: 18 pages, 5 figures

Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting

Authors: Jiarui Gong, Donghyeok Kim, Hokyung Jang, Fikadu Alema, Qingxiao Wang, Tien Khee Ng, Shuoyang Qiu, Jie Zhou, Xin Su, Qinchen Lin, Ranveer Singh, Haris Abbasi, Kelson Chabak, Gregg Jessen, Clincy Cheung, Vincent Gambin, Shubhra S. Pasayat, Andrei Osinsky, Boon, S. Ooi, Chirag Gupta, Zhenqiang Ma

Abstract: The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face se… ▽ More The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face severe challenges in further advancing the $β$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$β$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$β$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $β$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$β$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $β$-Ga$_2$O$_3$-based transistors. △ Less

Submitted 30 May, 2023; originally announced May 2023.

Comments: 32 pages, 10 figures. The preliminary data were presented as a poster in the 5th US Gallium Oxide Workshop, Washington, DC. August 07-10, 2022

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films

Authors: Fikadu Alema, Carl Peterson, Arkka Bhattacharyya, Saurav Roy, Sriram Krishnamoorthy, Andrei Osinsky

Abstract: We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and t… ▽ More We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and total contact resistance (Rc) of 1.62e-7 Ohm.cm^2 and 0.023 Ohm.mm were realized for $β$-Ga$_2$O$_3$: Si films with n > 3e20 cm^-3. TLM structures were also fabricated on heavily Si doped coherently strained $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ (x=12%, 17% and 22%) films. The film with 12% Al composition (n=1.23e20 cm^-3) showed \r{ho}c of 5.85e-6 Ohm.cm^2, but it increased to 2.19e-4 Ohm.cm^2 for a layer with a 22% Al composition. Annealing the samples post metal deposition has generally led to a decrease in contact resistance, but for high Al content $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$, the contact resistance did not change significantly after the annealing process. The low contact resistance values measured in this work are very promising for the fabrication of high frequency power devices. △ Less

Submitted 3 August, 2022; originally announced August 2022.

4.4 kV $β$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$

Authors: Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema, Praneeth Ranga, Saurav Roy, Carl Peterson, George Seryogin, Andrei Osinsky, Uttam Singisetti, Sriram Krishnamoorthy

Abstract: Field-plated (FP) depletion-mode MOVPE-grown $β$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L$_{GD}$ = 34.5 $μ$m exhibits an ON current (I… ▽ More Field-plated (FP) depletion-mode MOVPE-grown $β$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L$_{GD}$ = 34.5 $μ$m exhibits an ON current (I$_{DMAX}$) of 56 mA/mm, a high I$_{ON}$/I$_{OFF}$ ratio $>$ 10$^8$ and a very low reverse leakage until catastrophic breakdown at $\sim$ 4.4kV. The highest measurable V$_{BR}$ recorded was 4.57 kV (L$_{GD}$ = 44.5 $μ$m). An LFOM of 132 MW/cm$^2$ was calculated for a V$_{BR}$ of $\sim$ 4.4 kV. The reported results are the first $>$ 4kV-class Ga$_2$O$_3$ transistors to surpass the theoretical FOM of Silicon. These are also the highest I$_{DMAX}$ and lowest R$_{ON}$ values achieved simultaneously for any $β$-Ga$_2$O$_3$ device with V$_{BR}$ $>$ 4kV to date. This work highlights that high breakdown voltages (V$_{BR}$), high lateral figure of merit (LFOM) and high ON currents can be achieved simultaneously in $β$-Ga$_2$O$_3$ lateral transistors. △ Less

Submitted 24 January, 2022; originally announced January 2022.

Comments: 4 pages, 5 figures

Multi-kV class $β$-Ga$_2$O$_3$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm$^2$

Authors: Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Carl Peterson, Fikadu Alema, George Seryogin, Andrei Osinsky, Sriram Krishnamoorthy

Abstract: We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $β$-Ga$_2$O$_3$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact layers. Using an improved low-temperature MOVPE selective area epitaxy process, we show that a total contact resistance to the channel as low as 1.4 $Ω$.mm can be achiev… ▽ More We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $β$-Ga$_2$O$_3$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact layers. Using an improved low-temperature MOVPE selective area epitaxy process, we show that a total contact resistance to the channel as low as 1.4 $Ω$.mm can be achieved.The GPFP design adopted here using PECVD (plasma-enhanced chemical vapor deposition) deposited SiN$_x$ dielectric and SiN$_x$/SiO$_2$ wrap-around passivation exhibits up to ~14% improved R$_{ON}$, up to ~70% improved breakdown voltage (V$_{BR}$ = V$_{DS}$ - V$_{GS}$) resulting in up to $\sim$3$\times$ higher LFOM compared to non-FP $β$-Ga$_2$O$_3$ lateral MESFETs. The V$_{BR}$ (~2.5 kV) and LFOM (355 MW/cm$^2$) measured simultaneously in our GPFP $β$-Ga$_2$O$_3$ lateral MESFET (with L$_{GD}$ = 10 $μ$m) is the highest value achieved in any depletion-mode $β$-Ga$_2$O$_3$ lateral device. △ Less

Submitted 26 July, 2021; v1 submitted 11 June, 2021; originally announced June 2021.

Comments: 6 pages, 5 figures