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Laser patterning of magnonic structure via local crystallization of Yittrium Iron Garnet
Authors:
A. Del Giacco,
F. Maspero,
V. Levati,
M. Vitali,
E. Albisetti,
D. Petti,
L. Brambilla,
V. Polewczyk,
G. Vinai,
G. Panaccione,
R. Silvani,
M. Madami,
S. Tacchi,
R. Dreyer,
S. R. Lake,
G. Woltersdorf,
G. Schmidt,
Riccardo Bertacco
Abstract:
The fabrication and integration of high-quality structures of Yttrium Iron Garnet (YIG) is critical for magnonics.Films with excellent properties are obtained only on single crystal Gadolinium Gallium Garnet (GGG) substrates using high-temperature processes. The subsequent realization of magnonic structures via lithography and etching is not straightforward as it requires a tight control of the ed…
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The fabrication and integration of high-quality structures of Yttrium Iron Garnet (YIG) is critical for magnonics.Films with excellent properties are obtained only on single crystal Gadolinium Gallium Garnet (GGG) substrates using high-temperature processes. The subsequent realization of magnonic structures via lithography and etching is not straightforward as it requires a tight control of the edge roughness, to avoid magnon scattering, and planarization in case of multilayer devices. In this work we describe a different approach based on local laser annealing of amorphous YIG films, avoiding the need for subjecting the entire sample to high thermal budgets and for physical etching. Starting from amorphous and paramagnetic YIG films grown by pulsed laser deposition at room temperature on GGG, a 405 nm laser is used for patterning arbitrary shaped ferrimagnetic structures by local crystallization. In thick films (160 nm) the laser induced surface corrugation prevents the propagation of spin-wave modes in patterned conduits. For thinner films (80 nm) coherent propagation is observed in 1.2 micron wide conduits displaying an attenuation length of 5 micron which is compatible with a dam** coefficient of about 5e-3. Possible routes to achieve dam** coefficients compatible with state-of-the art epitaxial YIG films are discussed.
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Submitted 22 February, 2024;
originally announced February 2024.
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Three-dimensional spin-wave dynamics, localization and interference in a synthetic antiferromagnet
Authors:
Davide Girardi,
Simone Finizio,
Claire Donnelly,
Guglielmo Rubini,
Sina Mayr,
Valerio Levati,
Simone Cuccurullo,
Federico Maspero,
Jörg Raabe,
Daniela Petti,
Edoardo Albisetti
Abstract:
Spin waves are collective perturbations in the orientation of the magnetic moments in magnetically ordered materials. Their rich phenomenology is intrinsically three-dimensional; however, the three-dimensional imaging of spin waves has so far not been possible. Here, we image the three-dimensional dynamics of spin waves excited in a synthetic antiferromagnet, with nanoscale spatial resolution and…
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Spin waves are collective perturbations in the orientation of the magnetic moments in magnetically ordered materials. Their rich phenomenology is intrinsically three-dimensional; however, the three-dimensional imaging of spin waves has so far not been possible. Here, we image the three-dimensional dynamics of spin waves excited in a synthetic antiferromagnet, with nanoscale spatial resolution and sub-ns temporal resolution, using time-resolved magnetic laminography. In this way, we map the distribution of the spin-wave modes throughout the volume of the structure, revealing unexpected depth-dependent profiles originating from the interlayer dipolar interaction. We experimentally demonstrate the existence of complex three-dimensional interference patterns and analyze them via micromagnetic modelling. We find that these patterns are generated by the superposition of spin waves with non-uniform amplitude profiles, and that their features can be controlled by tuning the composition and structure of the magnetic system. Our results open unforeseen possibilities for the study and manipulation of complex spin-wave modes within nanostructures and magnonic devices.
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Submitted 18 April, 2024; v1 submitted 27 June, 2023;
originally announced June 2023.
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Inertial spin dynamics in epitaxial cobalt films
Authors:
Vivek Unikandanunni,
Rajasekhar Medapalli,
Marco Asa,
Edoardo Albisetti,
Daniela Petti,
Riccardo Bertacco,
Eric E. Fullerton,
Stefano Bonetti
Abstract:
We investigate the spin dynamics driven by terahertz magnetic fields in epitaxial thin films of cobalt in its three crystalline phases. The terahertz magnetic field generates a torque on the magnetization which causes it to precess for about 1 ps, with a sub-picosecond temporal lag from the driving force. Then, the magnetization undergoes natural damped THz oscillations at a frequency characterist…
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We investigate the spin dynamics driven by terahertz magnetic fields in epitaxial thin films of cobalt in its three crystalline phases. The terahertz magnetic field generates a torque on the magnetization which causes it to precess for about 1 ps, with a sub-picosecond temporal lag from the driving force. Then, the magnetization undergoes natural damped THz oscillations at a frequency characteristic of the crystalline phase. We describe the experimental observations solving the inertial Landau-Lifshitz-Gilbert equation. Using the results from the relativistic theory of magnetic inertia, we find that the angular momentum relaxation time $η$ is the only material parameter needed to describe all the experimental evidence. Our experiments suggest a proportionality between $η$ and the strength of the magneto-crystalline anisotropy.
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Submitted 11 September, 2021; v1 submitted 7 September, 2021;
originally announced September 2021.
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Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe
Authors:
Sara Varotto,
Luca Nessi,
Stefano Cecchi,
Jagoda Sławińska,
Paul Noël,
Simone Petrò,
Federico Fagiani,
Alessandro Novati,
Matteo Cantoni,
Daniela Petti,
Edoardo Albisetti,
Marcio Costa,
Raffaella Calarco,
Marco Buongiorno Nardelli,
Manuel Bibes,
Silvia Picozzi,
Jean-Philippe Attané,
Laurent Vila,
Riccardo Bertacco,
Christian Rinaldi
Abstract:
Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit…
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Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit coupling, and non-volatility endowed by ferroelectricity. However, their potential for spintronics has been little explored. Here, we demonstrate the non-volatile, ferroelectric control of spin-to-charge conversion at room temperature in epitaxial GeTe films. We show that ferroelectric switching by electrical gating is possible in GeTe despite its high carrier density. We reveal a spin-to-charge conversion as effective as in Pt, but whose sign is controlled by the orientation of the ferroelectric polarization. The comparison between theoretical and experimental data suggests that spin Hall effect plays a major role for switchable conversion. These results open a route towards devices combining spin-based logic and memory integrated into a silicon-compatible material.
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Submitted 13 March, 2021;
originally announced March 2021.
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Nonreciprocal nano-optics with spin-waves in synthetic antiferromagnets
Authors:
Edoardo Albisetti,
Silvia Tacchi,
Raffaele Silvani,
Giuseppe Scaramuzzi,
Simone Finizio,
Sebastian Wintz,
Jörg Raabe,
Giovanni Carlotti,
Riccardo Bertacco,
Elisa Riedo,
Daniela Petti
Abstract:
Integrated optically-inspired wave-based processing is envisioned to outperform digital architectures in specific tasks, such as image processing and speech recognition. In this view, spin-waves represent a promising route due to their nanoscale wavelength in the GHz frequency range and rich phenomenology. Here, we realize a versatile optically-inspired platform using spin-waves, demonstrating the…
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Integrated optically-inspired wave-based processing is envisioned to outperform digital architectures in specific tasks, such as image processing and speech recognition. In this view, spin-waves represent a promising route due to their nanoscale wavelength in the GHz frequency range and rich phenomenology. Here, we realize a versatile optically-inspired platform using spin-waves, demonstrating the wavefront engineering, focusing, and robust interference of spin-waves with nanoscale wavelength. In particular, we use magnonic nanoantennas based on tailored spin-textures for launching spatially shaped coherent wavefronts, diffraction-limited spin-wave beams, and generating robust multi-beam interference patterns, which spatially extend for several times the spin-wave wavelength. Furthermore, we show that intriguing features, such as resilience to back-reflection, naturally arise from the spin-wave nonreciprocity in synthetic antiferromagnets, preserving the high quality of the interference patterns from spurious counterpropagating modes. This work represents a fundamental step towards the realization of nanoscale optically-inspired devices based on spin-waves.
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Submitted 24 September, 2019; v1 submitted 25 February, 2019;
originally announced February 2019.
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Nanomagnonic waveguides based on reconfigurable spin-textures for spin computing
Authors:
Edoardo Albisetti,
Daniela Petti,
Giacomo Sala,
Raffaele Silvani,
Silvia Tacchi,
Simone Finizio,
Sebastian Wintz,
Annalisa Caló,
Xiaorui Zheng,
Jörg Raabe,
Elisa Riedo,
Riccardo Bertacco
Abstract:
Magnonics is gaining momentum as an emerging technology for information processing. The wave character and Joule heating-free propagation of spin-waves hold promises for highly efficient analog computing platforms, based on integrated magnonic circuits. Miniaturization is a key issue but, so far, only few examples of manipulation of spin-waves in nanostructures have been demonstrated, due to the d…
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Magnonics is gaining momentum as an emerging technology for information processing. The wave character and Joule heating-free propagation of spin-waves hold promises for highly efficient analog computing platforms, based on integrated magnonic circuits. Miniaturization is a key issue but, so far, only few examples of manipulation of spin-waves in nanostructures have been demonstrated, due to the difficulty of tailoring the nanoscopic magnetic properties with conventional fabrication techniques. In this Letter, we demonstrate an unprecedented degree of control in the manipulation of spin-waves at the nanoscale by using patterned reconfigurable spin-textures. By space and time-resolved scanning transmission X-ray microscopy imaging, we provide direct evidence for the channeling and steering of propagating spin-waves in arbitrarily shaped nanomagnonic waveguides based on patterned domain walls, with no need for external magnetic fields or currents. Furthermore, we demonstrate a prototypic nanomagnonic circuit based on two converging waveguides, allowing for the tunable spatial superposition and interaction of confined spin-waves modes.
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Submitted 21 December, 2017;
originally announced December 2017.
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Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
Authors:
D. Petti,
E. Albisetti,
H. Reichlová,
J. Gazquez,
M. Varela,
M. Molina-Ruiz,
A. F. Lopeandía,
K. Olejník,
V. Novák,
I. Fina,
B. Dkhil,
J. Hayakawa,
X. Marti,
J. Wunderlich,
T. Jungwirth,
R. Bertacco
Abstract:
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magn…
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Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magnetic fields thus constituting a memory element robust against external magnetic fields. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.
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Submitted 15 February, 2013;
originally announced February 2013.