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Flat-band hybridization between $f$ and $d$ states near the Fermi energy of SmCoIn$_5$
Authors:
David W. Tam,
Nicola Colonna,
Fatima Alarab,
Vladimir N. Strocov,
Dariusz Jakub Gawryluk,
Ekaterina Pomjakushina,
Michel Kenzelmann
Abstract:
We present high-quality angle-resolved photoemission (ARPES) and density functional theory calculations (DFT+U) of SmCoIn$_5$. We find broad agreement with previously published studies of LaCoIn$_5$ and CeCoIn$_5$, confirming that the Sm $4f$ electrons are mostly localized. Nevertheless, our model is consistent with an additional delocalized Sm component, stemming from hybridization between the…
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We present high-quality angle-resolved photoemission (ARPES) and density functional theory calculations (DFT+U) of SmCoIn$_5$. We find broad agreement with previously published studies of LaCoIn$_5$ and CeCoIn$_5$, confirming that the Sm $4f$ electrons are mostly localized. Nevertheless, our model is consistent with an additional delocalized Sm component, stemming from hybridization between the $4f$ electrons and the metallic bands at "hot spot" positions in the Brillouin zone. The dominant hot spot, called $γ_Z$, is similar to a source of delocalized $f$ states found in previous experimental and theoretical studies of CeCoIn$_5$. In this work, we identify and focus on the role of the Co $d$ states in exploring the relationship between heavy quasiparticles and the magnetic interactions in SmCoIn$_5$, which lead to a magnetically ordered ground state from within an intermediate valence scenario. Specifically, we find a globally flat band consisting of Co $d$ states near $E=-0.7$ eV, indicating the possibility of enhanced electronic and magnetic interactions in the "115" family of materials through localization in the Co layer, and we discuss a possible origin in geometric frustration. We also show that the delocalized Sm $4f$ states can hybridize directly with the Co $3d_{xz}$/$3d_{yz}$ orbitals, which occurs in our model at the Brillouin zone boundary point $R$ in a band that is locally flat and touches the Fermi level from above. Our work identifies microscopic ingredients for additional magnetic interactions in the "115" materials beyond the RKKY mechanism, and strongly suggests that the Co $d$ bands are an important ingredient in the formation of both magnetic and superconducting ground states.
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Submitted 6 March, 2024;
originally announced March 2024.
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Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO$_3$ Interfaces
Authors:
Pia M. Düring,
Paul Rosenberger,
Lutz Baumgarten,
Fatima Alarab,
Frank Lechermann,
Vladimir N. Strocov,
Martina Müller
Abstract:
Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic counterparts: the ability to set or even switch between two types of carriers - either negatively (n) charged electrons or positively (p) charged holes. Here, w…
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Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic counterparts: the ability to set or even switch between two types of carriers - either negatively (n) charged electrons or positively (p) charged holes. Here, we provide direct evidence for individually emerging n- or p-type 2D band dispersions in STO-based heterostructures using resonant photoelectron spectroscopy. The key to tuning the carrier character is the oxidation state of an adjacent Fe-based interface layer: For Fe and FeO, hole bands emerge in the empty band gap region of STO due to hybridization of Ti and Fe-derived states across the interface, while for Fe$_3$O$_4$ overlayers, an 2D electron system is formed. Unexpected oxygen vacancy characteristics arise for the hole-type interfaces, which as of yet had been exclusively assigned to the emergence of 2DESs. In general, this finding opens up the possibility to straightforwardly switch the type of conductivity at STO interfaces by the oxidation state of a redox overlayer. This will extend the spectrum of phenomena in oxide electronics, including the realization of combined n/p-type all-oxide transistors or logic gates.
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Submitted 15 December, 2023;
originally announced December 2023.
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Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$
Authors:
Fatima Alarab,
Karol Hricovini,
Berengar Leikert,
Christine Richter,
Thorsten Schmitt,
Michael Sing,
Ralph Claessen,
Ján Minár,
Vladimir N. Strocov
Abstract:
Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni do** shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-do**) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (…
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Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni do** shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-do**) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (MES). Thereby, the in-plane dxy-derived bands reduce the embedded electron density, as evidenced by progressive reduction of their Fermi momentum with the Ni concentration, and the out-of-plane dxz/yz-derived bands depopulate, making the MES purely two-dimensional. Furthermore, the Ti and Ni L2,3-edge resonant photoemission is used to identify the Ni 3d impurity state in the vicinity of the valence-band maximum, and decipher the full spectrum of the VO-induced in-gap states originating from the Ni atoms, Ti atoms, and from their hybridized orbitals. Our experimental information about the dependence of the valence bands, MES and in-gap states in Ni-doped SrTiO$_3$ may help development of this material towards its device applications associated with the reduced optical band gap.
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Submitted 19 October, 2023;
originally announced October 2023.
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k-dependent proximity-induced modulation of spin-orbit interaction in MoSe2 interfaced with amorphous Pb
Authors:
Fatima Alarab,
Ján Minár,
Procopios Constantinou,
Dhani Nafday,
Thorsten Schmitt,
Xiaoqiang Wang,
Vladimir N. Strocov
Abstract:
The ability to modulate the spin-orbit (SO) interaction is crucial for engineering a wide range of spintronics-based quantum devices, extending from state-of-the-art data storage to materials for quantum computing. The use of proximity-induced effects for this purpose may become the mainstream approach, whereas their experimental verification using angle-resolved photoelectron spectroscopy (ARPES)…
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The ability to modulate the spin-orbit (SO) interaction is crucial for engineering a wide range of spintronics-based quantum devices, extending from state-of-the-art data storage to materials for quantum computing. The use of proximity-induced effects for this purpose may become the mainstream approach, whereas their experimental verification using angle-resolved photoelectron spectroscopy (ARPES) has so far been elusive. Here, using the advantages of soft-X-ray ARPES on its probing depth and intrinsic resolution in three-dimensional momentum k, we identify a distinct modulation of the SO interaction in a van der Waals semiconductor (MoSe2) proximitized to a high-Z metal (Pb), and measure its variation through the k-space. The strong SO field from Pb boosts the SO splitting by up to 30% at the H-point of the bulk Brillouin zone, the spin-orbit hotspot of MoSe2. Tunability of the splitting via the Pb thickness allows its tailoring to particular applications in emerging quantum devices.
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Submitted 17 October, 2023;
originally announced October 2023.
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Altermagnetic lifting of Kramers spin degeneracy
Authors:
J. Krempaský,
L. Šmejkal,
S. W. D'Souza,
M. Hajlaoui,
G. Springholz,
K. Uhlířová,
F. Alarab,
P. C. Constantinou,
V. Strokov,
D. Usanov,
W. R. Pudelko,
R. González-Hernández,
A. Birk Hellenes,
Z. Jansa,
H. Reichlová,
Z. Šobáň,
R. D. Gonzalez Betancourt,
P. Wadley,
J. Sinova,
D. Kriegner,
J. Minár,
J. H. Dil,
T. Jungwirth
Abstract:
Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal…
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Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal symmetry-breaking mechanisms. The first one refers to time-reversal symmetry breaking by magnetization of ferromagnets, and tends to be strong due to the non-relativistic exchange-coupling origin. The second mechanism applies to crystals with broken inversion symmetry, and tends to be comparatively weaker as it originates from the relativistic spin-orbit coupling. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic, that allows for lifting the Kramers spin degeneracy without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of lifted Kramers spin degeneracy generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization. Our observation of the altermagnetic lifting of the Kramers spin degeneracy can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors, that have been either identified recently or perceived for many decades as conventional antiferromagnets.
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Submitted 21 August, 2023;
originally announced August 2023.
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Charge fluctuations in the intermediate-valence ground state of SmCoIn$_5$
Authors:
David W. Tam,
Nicola Colonna,
Neeraj Kumar,
Cinthia Piamonteze,
Fatima Alarab,
Vladimir N. Strocov,
Antonio Cervellino,
Tom Fennell,
Dariusz Jakub Gawryluk,
Ekaterina Pomjakushina,
Y. Soh,
Michel Kenzelmann
Abstract:
The microscopic mechanism of heavy band formation, relevant for unconventional superconductivity in CeCoIn$_5$ and other Ce-based heavy fermion materials, depends strongly on the efficiency with which $f$ electrons are delocalized from the rare earth sites and participate in a Kondo lattice. Replacing Ce$^{3+}$ ($4f^1$, $J=5/2$) with Sm$^{3+}$ ($4f^5$, $J=5/2$), we show that a combination of cryst…
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The microscopic mechanism of heavy band formation, relevant for unconventional superconductivity in CeCoIn$_5$ and other Ce-based heavy fermion materials, depends strongly on the efficiency with which $f$ electrons are delocalized from the rare earth sites and participate in a Kondo lattice. Replacing Ce$^{3+}$ ($4f^1$, $J=5/2$) with Sm$^{3+}$ ($4f^5$, $J=5/2$), we show that a combination of crystal field and on-site Coulomb repulsion causes SmCoIn$_5$ to exhibit a $Γ_7$ ground state similar to CeCoIn$_5$ with multiple $f$ electrons. Remarkably, we also find that with this ground state, SmCoIn$_5$ exhibits a temperature-induced valence crossover consistent with a Kondo scenario, leading to increased delocalization of $f$ holes below a temperature scale set by the crystal field, $T_v$ $\approx$ 60 K. Our result provides evidence that in the case of many $f$ electrons, the crystal field remains the most important tuning knob in controlling the efficiency of delocalization near a heavy fermion quantum critical point, and additionally clarifies that charge fluctuations play a general role in the ground state of "115" materials.
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Submitted 25 July, 2023;
originally announced July 2023.
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Orientation-dependent electron-phonon coupling in interfacial superconductors LaAlO3/KTaO3
Authors:
Xiaoyang Chen,
Tianlun Yu,
Yuan Liu,
Yanqiu Sun,
Minyinan Lei,
Nan Guo,
Yu Fan,
Xingtian Sun,
Meng Zhang,
Fatima Alarab,
Vladimir N. Strokov,
Yilin Wang,
Tao Zhou,
Xinyi Liu,
Fan** Lu,
Weitao Liu,
Yanwu Xie,
Rui Peng,
Haichao Xu,
Donglai Feng
Abstract:
The emergent superconductivity at the LaAlO3/KTaO3 interfaces exhibits a mysterious dependence on the KTaO3 crystallographic orientations. Here we show, by soft X-ray angle-resolved photoemission spectroscopy, that the interfacial superconductivity is contributed by mobile electrons with unexpected quasi-three-dimensional character, beyond the "two-dimensional electron gas" scenario in describing…
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The emergent superconductivity at the LaAlO3/KTaO3 interfaces exhibits a mysterious dependence on the KTaO3 crystallographic orientations. Here we show, by soft X-ray angle-resolved photoemission spectroscopy, that the interfacial superconductivity is contributed by mobile electrons with unexpected quasi-three-dimensional character, beyond the "two-dimensional electron gas" scenario in describing oxide interfaces. At differently-oriented interfaces, the quasi-three-dimensional electron gas ubiquitously exists and spatially overlaps with the small q Fuchs-Kliewer surface phonons. Intriguingly, electrons and the Fuchs-Kliewer phonons couple with different strengths depending on the interfacial orientations, and the stronger coupling correlates with the higher superconducting transition temperature. Our results provide a natural explanation for the orientation-dependent superconductivity, and the first evidence that interfacial orientations can affect electron-phonon coupling strength over several nanometers, which may have profound implications for the applications of oxide interfaces in general.
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Submitted 31 January, 2023;
originally announced January 2023.
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Are high-energy photoemission final states free-electron-like?
Authors:
V. N. Strocov,
L. L. Lev,
F. Alarab,
P. Constantinou,
T. Schmitt,
T. J. Z. Stock,
L. Nicolaï,
J. Očenášek,
J. Minár
Abstract:
Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc. Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the p…
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Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc. Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the photoemission final states. Our soft-X-ray ARPES data on Ag metal reveals, however, that even at high excitation energies the final states can be a way more complex, incorporating several Bloch waves with different out-of-plane momenta. Such multiband final states manifest themselves as a complex structure and excessive broadening of the spectral peaks from 3D electron states. We analyse the origins of this phenomenon, and trace it to other materials such as Si and GaN. Our findings are essential for accurate determination of the 3D band structure over a wide range of materials and excitation energies in the ARPES experiment.
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Submitted 30 December, 2022;
originally announced January 2023.
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Photoemission study on pristine and Ni-doped SrTiO$_{3}$ thin films
Authors:
F. Alarab,
K. Hricovini,
B. Leikert,
L. Nicolai,
M. Fanciulli,
O. Heckmann,
M. Richter,
L. Prušakova,
Z. Jansa,
P. Šutta,
J. Rault,
P. Lefevre,
M. Muntwiller,
R. Claessen,
J. Minár
Abstract:
We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high…
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We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Khon-Rostoker Greens's function method, predicted the formation of localised $3d$-impurity bands in the band gap of SrTiO$_{3}$ close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion confirm these findings.
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Submitted 25 November, 2020;
originally announced November 2020.
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Study and characterization of SrTiO3 surface
Authors:
F. Alarab,
J. Minar,
P. Sutta,
L. Prusakova,
R. Medlın,
O. Heckmann,
C. Richter,
K. Hricovini
Abstract:
The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The origin of 2DEGes at oxide interfaces has been attributed to the well known "polar catastrophe" mechanism. On the other hand, recently a 2DEG was also found on a cl…
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The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The origin of 2DEGes at oxide interfaces has been attributed to the well known "polar catastrophe" mechanism. On the other hand, recently a 2DEG was also found on a clean SrTiO3(001) surface where it is formed due to oxygen vacancies. However, these 2DEG systems have been until now found mostly on atomically perfect crystalline samples usually grown by pulsed laser deposition or molecular beam epitaxy i.e. samples which are difficult to be prepared and require specific experimental conditions. Here, we report on the fabrication of SrTiO3 thin films deposited by magnetron sputtering which is suitable for mass-production of samples adapted for nanoelectronic applications. The characterization of their structural and electronic properties was done and compared to those of SrTiO3 single crystals. XRD patterns and SEM micrography show that the deposited films are amorphous and their structure changes to polycrystalline by heating them at 900 °C. Photoemission spectroscopy (XPS and UPS) was used to study the electronic properties of the films and the crystal. In both, we observe the 2DEG system at Fermi level and the formation of Ti3+ states after heating the surface at 900 °C.
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Submitted 30 June, 2018;
originally announced July 2018.
