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Ultrafast Neuromorphic Photonic Image Processing with a VCSEL Neuron
Authors:
Joshua Robertson,
Paul Kirkland,
Juan Arturo Alanis,
Matěj Hejda,
Julián Bueno,
Gaetano Di Caterina,
Antonio Hurtado
Abstract:
The ever-increasing demand for Artificial Intelligence (AI) systems is underlining a significant requirement for new, AI-optimised hardware. Neuromorphic (brain-like) processors are one highly-promising solution, with photonic-enabled realizations receiving increasing attention. Among these, approaches based upon Vertical Cavity Surface Emitting Lasers (VCSELs) are attracting interest given their…
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The ever-increasing demand for Artificial Intelligence (AI) systems is underlining a significant requirement for new, AI-optimised hardware. Neuromorphic (brain-like) processors are one highly-promising solution, with photonic-enabled realizations receiving increasing attention. Among these, approaches based upon Vertical Cavity Surface Emitting Lasers (VCSELs) are attracting interest given their favourable attributes and mature technology. Here, we demonstrate a hardware-friendly neuromorphic photonic spike processor, using a single VCSEL, for all-optical image edge-feature detection. This exploits the ability of a VCSEL-based photonic neuron to integrate temporally-encoded pixel data at high speed; and fire fast (100ps-long) optical spikes upon detecting desired image features. Furthermore, the photonic system is combined with a software-implemented spiking neural network yielding a full platform for complex image classification tasks. This work therefore highlights the potentials of VCSEL-based platforms for novel, ultrafast, all-optical neuromorphic processors interfacing with current computation and communication systems for use in future light-enabled AI and computer vision functionalities.
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Submitted 4 October, 2021;
originally announced October 2021.
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Resonant tunnelling diode nano-optoelectronic spiking nodes for neuromorphic information processing
Authors:
Matěj Hejda,
Juan Arturo Alanis,
Ignacio Ortega-Piwonka,
João Lourenço,
José Figueiredo,
Julien Javaloyes,
Bruno Romeira,
Antonio Hurtado
Abstract:
In this work, we introduce an optoelectronic spiking artificial neuron capable of operating at ultrafast rates ($\approx$ 100 ps/optical spike) and with low energy consumption ($<$ pJ/spike). The proposed system combines an excitable resonant tunnelling diode (RTD) element exhibiting negative differential conductance, coupled to a nanoscale light source (forming a master node) or a photodetector (…
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In this work, we introduce an optoelectronic spiking artificial neuron capable of operating at ultrafast rates ($\approx$ 100 ps/optical spike) and with low energy consumption ($<$ pJ/spike). The proposed system combines an excitable resonant tunnelling diode (RTD) element exhibiting negative differential conductance, coupled to a nanoscale light source (forming a master node) or a photodetector (forming a receiver node). We study numerically the spiking dynamical responses and information propagation functionality of an interconnected master-receiver RTD node system. Using the key functionality of pulse thresholding and integration, we utilize a single node to classify sequential pulse patterns and perform convolutional functionality for image feature (edge) recognition. We also demonstrate an optically-interconnected spiking neural network model for processing of spatiotemporal data at over 10 Gbps with high inference accuracy. Finally, we demonstrate an off-chip supervised learning approach utilizing spike-timing dependent plasticity for the RTD-enabled photonic spiking neural network. These results demonstrate the potential and viability of RTD spiking nodes for low footprint, low energy, high-speed optoelectronic realization of neuromorphic hardware.
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Submitted 19 November, 2021; v1 submitted 14 July, 2021;
originally announced July 2021.
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Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems
Authors:
Dimitars Jevtics,
John McPhillimy,
Benoit Guilhabert,
Juan A. Alanis,
Hark Hoe Tan,
Chennupati Jagadish,
Martin D. Dawson,
Antonio Hurtado,
Patrick Parkinson,
Michael J. Strain
Abstract:
Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complement…
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Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complementary, high-throughput techniques are combined: the characterisation of nanowire laser populations using automated optical microscopy, and a high accuracy transfer printing process with automatic device spatial registration and transfer. In this work a population of NW lasers is characterised, binned by threshold energy density and subsequently printed in arrays onto a secondary substrate. Statistical analysis of the transferred and control devices show that the transfer process does not incur measurable laser damage and the threshold binning can be maintained. Analysis is provided on the threshold and mode spectra of the device populations to investigate the potential for using NW lasers for integrated systems fabrication.
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Submitted 7 January, 2020;
originally announced January 2020.
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Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering
Authors:
N. Unsuree,
H. Selvi,
M. Crabb,
J. A. Alanis,
P. Parkinson,
T. J. Echtermeyer
Abstract:
The design of efficient graphene-silicon (GSi) Schottky junction photodetectors requires detailed understanding of the spatial origin of the photoresponse. Scanning-photocurrent-microscopy (SPM) studies have been carried out in the visible wavelengths regions only, in which the response due to silicon is dominant. Here we present comparative SPM studies in the visible ($λ$ = 633nm) and infrared (…
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The design of efficient graphene-silicon (GSi) Schottky junction photodetectors requires detailed understanding of the spatial origin of the photoresponse. Scanning-photocurrent-microscopy (SPM) studies have been carried out in the visible wavelengths regions only, in which the response due to silicon is dominant. Here we present comparative SPM studies in the visible ($λ$ = 633nm) and infrared ($λ$ = 1550nm) wavelength regions for a number of GSi Schottky junction photodetector architectures, revealing the photoresponse mechanisms for silicon and graphene dominated responses, respectively, and demonstrating the influence of electrostatics on the device performance. Local electric field enhancement at the graphene edges leads to a more than ten-fold increased photoresponse compared to the bulk of the graphene-silicon junction. Intentional design and patterning of such graphene edges is demonstrated as an efficient strategy to increase the overall photoresponse of the devices. Complementary simulations and modeling illuminate observed effects and highlight the importance of considering graphene's shape and pattern and device geometry in the device design.
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Submitted 30 January, 2019;
originally announced January 2019.
