Showing 1–6 of 6 results for author: Al-Mahboob, A

Twisted MoSe2 Homobilayer Behaving as a Heterobilayer

Authors: Arka Karmakar, Abdullah Al-Mahboob, Natalia Zawadzka, Mateusz Raczyński, Weiguang Yang, Mehdi Arfaoui, Gayatri, Julia Kucharek, Jerzy T. Sadowski, Hyeon Suk Shin, Adam Babiński, Wojciech Pacuski, Tomasz Kazimierczuk, Maciej R Molas

Abstract: Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a tw… ▽ More Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameters mismatch and indirect/direct (CVD/Exf.) bandgap nature. This effectively weaken the charge transfer (CT) process and allows the ET process to take over the carrier recombination channels. We utilize a series of optical and electron spectroscopy techniques complementing by the density functional theory calculations, to describe a massive photoluminescence enhancement from the HS area due to an efficient ET process. Our results show that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a 'true' heterobilayer nature. △ Less

Submitted 7 June, 2024; v1 submitted 23 April, 2024; originally announced April 2024.

Comments: 4 figures

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Authors: Yifan Yuan, Michele Kotiuga, Tae Joon Park, Yuanyuan Ni, Arnob Saha, Hua Zhou, Jerzy T. Sadowski, Abdullah Al-Mahboob, Haoming Yu, Kai Du, Minning Zhu, Sunbin Deng, Ravindra S. Bisht, Xiao Lyu, Chung-Tse Michael Wu, Peide D. Ye, Abhronil Sengupta, Sang-Wook Cheong, Xiaoshan Xu, Karin M. Rabe, Shriram Ramanathan

Abstract: Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor do**, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential ca… ▽ More Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor do**, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trap** of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H do**. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing novel ferroelectric materials and electrets using light-ion do**. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: 13 pages, 5 figures

Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material

Authors: Arka Karmakar, Tomasz Kazimierczuk, Igor Antoniazzi, Mateusz Raczyński, Suji Park, Houk Jang, Takashi Taniguchi, Kenji Watanabe, Adam Babiński, Abdullah Al-Mahboob, Maciej R. Molas

Abstract: High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenide (TMD) make it an ideal candidate for optoelectronic applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unli… ▽ More High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenide (TMD) make it an ideal candidate for optoelectronic applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unlike the CT process. Our experiment shows that an efficient ET occurs from the 1Ls WSe2-to-MoS2 with an interlayer hBN, due to the resonant overlap** of the high-lying excitonic states between the two TMDs, resulting in enhanced HS MoS2 PL emission. This type of unconventional ET from the lower-to-higher optical bandgap material is not typical in the TMD HSs. With increasing temperature, the ET process becomes weaker due to the increased electron-phonon scattering, destroying the enhanced MoS2 emission. Our work provides new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways. △ Less

Submitted 23 March, 2023; v1 submitted 13 January, 2023; originally announced January 2023.

Comments: 5 figures and SI included

Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure

Authors: Arka Karmakar, Abdullah Al-Mahboob, Christopher E. Petoukhoff, Oksana Kravchyna, Nicholas S. Chan, Takashi Taniguchi, Kenji Watanabe, Keshav M. Dani

Abstract: Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe2 and ReS2, nonradiative energy transf… ▽ More Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe2 and ReS2, nonradiative energy transfer (ET) from higher to lower work function material (ReS2 to MoSe2) dominates over the traditional CT process with and without a charge-blocking interlayer. Without a charge-blocking interlayer, the HS area shows 3.6 times MoSe2 photoluminescence (PL) enhancement as compared to the MoSe2 area alone. After completely blocking the CT process, more than one order of magnitude higher MoSe2 PL emission was achieved from the HS area. This work reveals that the nature of this ET is truly a resonant effect by showing that in a similar type-II HS formed by ReS2 and WSe2, CT dominates over ET, resulting in a severely quenched WSe2 PL. This study not only provides significant insight into the competing interlayer processes, but also shows an innovative way to increase the PL quantum yield of the desired TMD material using ET process by carefully choosing the right material combination for HS. △ Less

Submitted 7 October, 2021; originally announced October 2021.

Moiré-localized interlayer exciton wavefunctions captured by imaging its electron and hole constituents

Authors: Ouri Karni, Elyse Barré, Vivek Pareek, Johnathan D. Georgaras, Michael K. L. Man, Chakradhar Sahoo, David R. Bacon, Xing Zhu, Henrique B. Ribeiro, Aidan L. O'Beirne, Jenny Hu, Abdullah Al-Mahboob, Mohamed M. M. Abdelrasoul, Nicholas S. Chan, Arka Karmakar, Andrew J. Winchester, Bumho Kim, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, Julien Madéo, Felipe H. da Jornada, Tony F. Heinz, Keshav M. Dani

Abstract: Interlayer excitons (ILXs) - electron-hole pairs bound across two atomically thin layered semiconductors - have emerged as attractive platforms to study exciton condensation, single-photon emission and other quantum-information applications. Yet, despite extensive optical spectroscopic investigations, critical information about their size, valley configuration and the influence of the moiré potent… ▽ More Interlayer excitons (ILXs) - electron-hole pairs bound across two atomically thin layered semiconductors - have emerged as attractive platforms to study exciton condensation, single-photon emission and other quantum-information applications. Yet, despite extensive optical spectroscopic investigations, critical information about their size, valley configuration and the influence of the moiré potential remains unknown. Here, we captured images of the time- and momentum-resolved distribution of both the electron and the hole that bind to form the ILX in a WSe2/MoS2 heterostructure. We thereby obtain a direct measurement of the interlayer exciton diameter of ~5.4 nm, comparable to the moiré unit-cell length of 6.1 nm. Surprisingly, this large ILX is well localized within the moiré cell to a region of only 1.8 nm - smaller than the size of the exciton itself. This high degree of localization of the interlayer exciton is backed by Bethe-Salpeter equation calculations and demonstrates that the ILX can be localized within small moiré unit cells. Unlike large moiré cells, these are uniform over large regions, thus allowing the formation of extended arrays of localized excitations for quantum technology. △ Less

Submitted 4 August, 2021; originally announced August 2021.

Comments: 4 figures

Experimental measurement of the intrinsic excitonic wavefunction

Authors: Michael K. L. Man, Julien Madéo, Chakradhar Sahoo, Kaichen Xie, Marshall Campbell, Vivek Pareek, Arka Karmakar, E Laine Wong, Abdullah Al-Mahboob, Nicholas S. Chan, David R. Bacon, Xing Zhu, Mohamed Abdelrasoul, Xiaoquin Li, Tony F. Heinz, Felipe H. da Jornada, Ting Cao, Keshav M. Dani

Abstract: An exciton, a two-body composite quasiparticle formed of an electron and hole, is a fundamental optical excitation in condensed-matter systems. Since its discovery nearly a century ago, a measurement of the excitonic wavefunction has remained beyond experimental reach. Here, we directly image the excitonic wavefunction in reciprocal space by measuring the momentum distribution of electrons photoem… ▽ More An exciton, a two-body composite quasiparticle formed of an electron and hole, is a fundamental optical excitation in condensed-matter systems. Since its discovery nearly a century ago, a measurement of the excitonic wavefunction has remained beyond experimental reach. Here, we directly image the excitonic wavefunction in reciprocal space by measuring the momentum distribution of electrons photoemitted from excitons in monolayer WSe2. By transforming to real space, we obtain a visual of the distribution of the electron around the hole in an exciton. Further, by also resolving the energy coordinate, we confirm the elusive theoretical prediction that the photoemitted electron exhibits an inverted energy-momentum dispersion relationship reflecting the valence band where the partner hole remains, rather than that of conduction-band states of the electron. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Comments: 27 pages