Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K
Authors:
Joe Margetis,
Sattar Al-Kabi,
Wei Du,
Wei Dou,
Yiyin Zhou,
Thach Pham,
Perry Grant,
Seyed Ghetmiri,
Aboozar Mosleh,
Baohua Li,
Jifeng Liu,
Greg Sun,
Richard Soref,
John Tolle,
Mansour Mortazavi,
Shui-Qing Yu
Abstract:
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 μm. The GeSn alloys were grown using newly developed approaches with an industry standard…
▽ More
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 μm. The GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors. The achieved maximum Sn composition of 17.5% exceeded the generally acknowledged Sn incorporation limits for using similar deposition chemistries. The highest lasing temperature was measured as 180 K with the active layer thickness as thin as 260 nm. The unprecedented lasing performance is mainly due to the unique growth approaches, which offer high-quality epitaxial materials. The results reported in this work show a major advance towards Si-based mid-infrared laser sources for integrated photonics.
△ Less
Submitted 19 August, 2017;
originally announced August 2017.
