Showing 1–19 of 19 results for author: Alén, B

Design of a hybrid Mie-Tamm photonic structure as a highly directional GHz single-photon source

Authors: José M. Llorens, Benito Alén

Abstract: We present a photonic structure where Mie, Tamm, and surface plasmon optical modes can be tailored to enhance the brightness of an embedded single-photon emitter. Contrary to most proposals, the structure is designed for excitation and collection through the substrate side. The front surface can be used instead to arrange metal contacts which serve both, as electrical gates and optical mirrors. Th… ▽ More We present a photonic structure where Mie, Tamm, and surface plasmon optical modes can be tailored to enhance the brightness of an embedded single-photon emitter. Contrary to most proposals, the structure is designed for excitation and collection through the substrate side. The front surface can be used instead to arrange metal contacts which serve both, as electrical gates and optical mirrors. The design is particularized for InGaAs QDs on GaAs resulting in an outcoupled single-photon rate exceeding 3 GHz in a narrow cone of NA = 0.17. The fabrication tolerances are also discussed. △ Less

Submitted 12 December, 2022; v1 submitted 10 February, 2022; originally announced February 2022.

Journal ref: Phys. Rev. Applied 19, 034054 (2023)

Spin dependent analysis of homogeneous and inhomogeneous exciton decoherence in magnetic fields

Authors: V. Laurindo Jr., E. D. Guarin Castro, G. M. Jacobsen, E. R. C. de Oliveira, J. F. M. Domenegueti, B. Alén, Yu. I. Mazur, G. J. Salamo, G. E. Marques, E. Marega Jr., M. D. Teodoro, V. Lopez-Richard

Abstract: This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at lattice temperatures between 4 K and 50 K, the scattering with acoustic phonons and short-range interactions appear as the main decoherence mechanisms.… ▽ More This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at lattice temperatures between 4 K and 50 K, the scattering with acoustic phonons and short-range interactions appear as the main decoherence mechanisms. Statistical fluctuations of the band-gap however become also relevant in this regime and we were able to deconvolute them from the decoherence contributions. The circularly polarized magneto-photoluminescence unveils a non-monotonic tuning of the coherence for one of the spin components at low magnetic fields. This effect has been ascribed to the competition between short-range interactions and spin-flip scattering, modulated by the momentum relaxation time. △ Less

Submitted 4 January, 2022; v1 submitted 5 July, 2021; originally announced July 2021.

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Authors: Petr Steindl, Elisa Maddalena Sala, Benito Alén, Dieter Bimberg, Petr Klenovský

Abstract: Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implem… ▽ More Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implementation of such QDs for nano memory devices. Our set of structures contains a single QD layer, QDs overgrown by a GaSb cap** layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow us to discern the common spectral features around the emission energy of 1.8 eV related to GaAs quantum well and GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. The distribution suggests the coexistence of momentum direct and indirect QD transitions. Moreover, based on the considerable tunability of the dots depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor (CMOS) platforms, since GaP is almost lattice-matched to Si. Finally, our analysis confirms the nature of the pum** power blue-shift of emission originating from the charged-background induced changes of the wavefunction topology. △ Less

Submitted 15 January, 2021; originally announced January 2021.

Comments: 14 pages, 6 figures

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Authors: Petr Steindl, Elisa Maddalena Sala, Benito Alén, David Fuertes Marrón, Dieter Bimberg, Petr Klenovský

Abstract: The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swap** of $Γ$ and $L$ quantum confined states in energy, depending on details of their… ▽ More The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swap** of $Γ$ and $L$ quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of $\mathbf{k\cdot p}$ theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and cap** layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pum**, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pum**, which employs a numerical model based on a semi-self-consistent configuration interaction method. △ Less

Submitted 10 September, 2019; v1 submitted 24 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. B 100, 195407 (2019)

Magnetically controlled exciton transfer in hybrid quantum dot-quantum well nanostructures

Authors: V. Laurindo Jr., Yu. I. Mazur, E. R. Cardozo de Oliveira, B. Alén, M. E. Ware, E. Marega Jr., Z. Ya. Zhuchenko, G. G. Tarasov, G. E. Marques, M. D. Teodoro, G. J. Salamo

Abstract: A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the QW PL intensity is observed to increase at the expense of a decrease in… ▽ More A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the QW PL intensity is observed to increase at the expense of a decrease in the QD PL intensity. This is attributed to changes in the interplane carrier dynamics in the QW and the wetting layer (WL) resulting from increasing the magnetic field along with changes in the coupling between QD excited states and exciton states in the QW and the WL. △ Less

Submitted 15 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. B 100, 035309 (2019)

Topology driven g-factor tuning in type-II quantum dots

Authors: J. M. Llorens, V. Lopes-Oliveira, V. López-Richard, E. R. Cardozo de Oliveira, L. Wevior, J. M. Ulloa, M. D. Teodoro, G. E. Marques, A. García-Cristóbal, G. Quiang-Hai, B. Alén

Abstract: We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type II InAs/GaAsSb quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g-factor which are modulated by the applied bias. The results are explained in the frame of realistic $\mathbf{k}\cdot\mathbf{p}$ and effective… ▽ More We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type II InAs/GaAsSb quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g-factor which are modulated by the applied bias. The results are explained in the frame of realistic $\mathbf{k}\cdot\mathbf{p}$ and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm. △ Less

Submitted 17 April, 2019; v1 submitted 24 October, 2017; originally announced October 2017.

Comments: Final Version

Journal ref: Phys. Rev. Applied 11, 044011 (2019)

Strain-balanced type-II superlattices for efficient multi-junction solar cells

Authors: A. Gonzalo, A. D. Utrilla, D. F. Reyes, V. Braza, J. M. Llorens, D. Fuertes Marron, B. Alen, T. Ben, D. Gonzalez, A. Guzman, A. Hierro, J. M. Ulloa

Abstract: We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separation of Sb and N allows a better control over composition and lattice matching, avoiding the growth problems related to the concomitant presence of bo… ▽ More We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separation of Sb and N allows a better control over composition and lattice matching, avoiding the growth problems related to the concomitant presence of both elements in GaAsSbN layers. This approach not only reduces clustering and improves crystal quality and interface abruptness, but also allows for additional control of the effective bandgap in the 1.0-1.15 eV spectral region through the SL period thickness. The optimized SL structure exhibits a type-II band alignment and strong electronic coupling at 0 V. Both effects cooperate to increase the minority carrier collection and leads to a net strong enhancement of the external quantum efficiency (EQE) under photovoltaic conditions with respect to bulk layers of equivalent thickness. △ Less

Submitted 21 December, 2016; v1 submitted 15 December, 2016; originally announced December 2016.

Comments: 21 pages, 6 figures, 4 supporting figures

Type II InAs/GaAsSb Quantum Dots: Highly Tunable Exciton Geometry and Topology

Authors: José M. Llorens, Lukasz Wewior, Edson R. Cardozo de Oliveira, José M. Ulloa, Antonio D. Utrilla, Álvaro Guzmán, Adrián Hierro, Benito Alén

Abstract: External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuous… ▽ More External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena. △ Less

Submitted 13 November, 2015; v1 submitted 8 June, 2015; originally announced June 2015.

Comments: 4 pages and 4 figures

Journal ref: Appl. Phys. Lett. 107, 183101 (2015)

Probing quantum confinement within single core-multishell nanowires

Authors: Gema Martínez-Criado, Alejandro Homs, Benito Alén, Juan A. Sans, Jaime Segura-Ruiz, Alejandro Molina-Sánchez, Jean Susini, **kyoung Yoo, Gyu-Chul Yi

Abstract: Theoretically core-multishell nanowires under a cross-section of hexagonal geometry should exhibit peculiar confinement effects. Using a hard X-ray nanobeam, here we show experimental evidence for carrier localization phenomena at the hexagon corners by combining synchrotron excited optical luminescence with simultaneous X-ray fluorescence spectroscopy. Applied to single coaxial n-GaN/InGaN multiq… ▽ More Theoretically core-multishell nanowires under a cross-section of hexagonal geometry should exhibit peculiar confinement effects. Using a hard X-ray nanobeam, here we show experimental evidence for carrier localization phenomena at the hexagon corners by combining synchrotron excited optical luminescence with simultaneous X-ray fluorescence spectroscopy. Applied to single coaxial n-GaN/InGaN multiquantum-well/p-GaN nanowires, our experiment narrows the gap between optical microscopy and high-resolution X-ray imaging, and calls for further studies on the underlying mechanisms of optoelectronic nanodevices. △ Less

Submitted 1 October, 2013; originally announced October 2013.

Journal ref: Nano Letters 12, 5829 (2012)

Strain driven migration of In during the growth of InAs/GaAs quantum posts

Authors: D. Alonso-Álvarez, B. Alén, J. M. Ripalda, A. Rivera, A. G. Taboada, J. M. Llorens, Y. González, L. González, F. Briones

Abstract: Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nano… ▽ More Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures. △ Less

Submitted 8 September, 2013; v1 submitted 8 August, 2011; originally announced August 2011.

Comments: 10 pages, 4 figures. Published in APL Materials

Journal ref: APL Materials. 1, 022112 (2013)

Synthesis and luminescence properties of electrodeposited ZnO Films

Authors: C. V. Manzano, D. Alegre, O. Caballero-Calero, B. Alén, M. S. Martín-González

Abstract: ZnO films have been grown on gold (111) by electrodeposition using two different OH- sources, nitrate and peroxide, in order to obtain a comparative study between these films. The morphology, structural and optical characterization of the films were investigated depending on the solution used (nitrate and peroxide) and the applied potential. Scanning Electron Microscopy pictures show different mor… ▽ More ZnO films have been grown on gold (111) by electrodeposition using two different OH- sources, nitrate and peroxide, in order to obtain a comparative study between these films. The morphology, structural and optical characterization of the films were investigated depending on the solution used (nitrate and peroxide) and the applied potential. Scanning Electron Microscopy pictures show different morphologies in each case. X-Ray Diffraction confirms that the films are pure ZnO oriented along the (0002) direction. ZnO films have been studied by photoluminescence to identify the emission of defects in the visible range. A consistent model that explains the emissions for the different electrodeposited ZnO films is proposed. We have associated the green and yellow emissions to a transition from the donor OH- to the acceptor zinc vacancies (VZn-) and to interstitial oxygen (Oi0), respectively. The orange-red emission is probably due to transitions from the conducting band to Oi- and OZn 0 defects and the infrared emission to transition from these Oi -/2- and OZn 0/- defects to the valence band. △ Less

Submitted 14 July, 2011; originally announced July 2011.

Comments: 17 pages, 1 Table and 10 figures

Journal ref: J. Appl. Phys. 110, 043538 (2011)

Charge control in laterally coupled double quantum dots

Authors: G. Muñoz-Matutano, M. Royo, J. I. Climente, J. Canet-Ferrer, D. Fuster, P. Alonso-González, I. Fernández-Martínez, J. Martínez-Pastor, Y. González, L. González, F. Briones, B. Alén

Abstract: We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts whi… ▽ More We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunnelling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system. △ Less

Submitted 20 September, 2011; v1 submitted 26 April, 2011; originally announced April 2011.

Comments: 4 pages, 4 figures submitted to PRB Rapid Comm

Journal ref: Physical Review B 84, 041308 (R) (2011)

In-situ accumulated stress measurements: application to strain balanced quantum dots and quantum posts

Authors: D. Alonso-Álvarez., B. Alén, J. M. Ripalda, A. Rivera, A. G. Taboada, J. M. Llorens, Y. González, L. González, F. Briones

Abstract: In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and other strain balanced criteria commonly used indicate that it is necessary to consider the kinematics of the process, not only the nominal values for the deposite… ▽ More In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and other strain balanced criteria commonly used indicate that it is necessary to consider the kinematics of the process, not only the nominal values for the deposited materials. We find that the substrate temperature plays a major role on the compensation process and it is necessary to take it into account in order to achieve the optimum compensation conditions. The application of the technique to quantum posts has allowed us to fabricate nanostructures of exceptional length (120 nm). In situ accumulated measurements show that, even in shorter nanostrcutures, relaxation processes can be inhibited with the resulting increase in the material quality. △ Less

Submitted 24 February, 2011; originally announced February 2011.

Comments: 6 pages, 6 figures. To be submitted to Physical Review B

Strain balanced quantum posts

Authors: D. Alonso-Álvarez, B. Alén, J. M. Ripalda, J. Llorens, A. G. Taboada, F. Briones, M. A. Roldán, J. Hernández-Saz, D. Hernández-Maldonado, M. Herrera, S. I. Molina

Abstract: Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensa… ▽ More Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy. △ Less

Submitted 7 March, 2011; v1 submitted 22 February, 2011; originally announced February 2011.

Comments: Submitted to Applied Physics Letters (7th March 2011). 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 98, 173106 (2011)

Electrical control of a laterally ordered InAs/InP quantum dash array

Authors: B. Alen, D. Fuster, I. Fernandez-Martinez, J. Martinez-Pastor, Y. Gonzalez, F. Briones, L. Gonzalez

Abstract: We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with p… ▽ More We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with performance limited by the size inhomogeneity of the self-assembling process. △ Less

Submitted 16 November, 2009; v1 submitted 4 March, 2008; originally announced March 2008.

Journal ref: Nanotechnology 20 (2009) 475202

Exciton Gas Compression and Metallic Condensation in a Single Semiconductor Quantum Wire

Authors: Benito Alen, David Fuster, Guillermo Munoz-Matutano, Juan Martinez-Pastor, Yolanda Gonzalez, Luisa Gonzalez

Abstract: We study the metal-insulator transition in individual self-assembled quantum wires and report optical evidences of metallic liquid condensation at low temperatures. Firstly, we observe that the temperature and power dependence of the single nanowire photoluminescence follow the evolution expected for an electron-hole liquid in one dimension. Secondly, we find novel spectral features that suggest… ▽ More We study the metal-insulator transition in individual self-assembled quantum wires and report optical evidences of metallic liquid condensation at low temperatures. Firstly, we observe that the temperature and power dependence of the single nanowire photoluminescence follow the evolution expected for an electron-hole liquid in one dimension. Secondly, we find novel spectral features that suggest that in this situation the expanding liquid condensate compresses the exciton gas in real space. Finally, we estimate the critical density and critical temperature of the phase transition diagram at $n_c\sim1\times10^5$ cm$^{-1}$ and $T_c\sim35$ K, respectively. △ Less

Submitted 12 August, 2008; v1 submitted 30 January, 2008; originally announced January 2008.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. Lett. 101, 067405 (2008)

Optical pum** of charged excitons in unintentionally doped InAs quantum dots

Authors: G. Munoz-Matutano, B. Alen, J. Martinez-Pastor, L. Seravalli, P. Frigeri, S. Franchi

Abstract: As an alternative to commonly used electrical methods, we have investigated the optical pum** of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we demonstrate that the pum** fidelity can be very high while still maintaining a switching behavior between the different excitonic species. This mechanism has been i… ▽ More As an alternative to commonly used electrical methods, we have investigated the optical pum** of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we demonstrate that the pum** fidelity can be very high while still maintaining a switching behavior between the different excitonic species. This mechanism has been investigated for single quantum dots of different size present in the same sample and compared with the direct injection of spectator electrons from nearby donors. △ Less

Submitted 18 April, 2007; originally announced April 2007.

Comments: 4 pages and 3 figures submitted to APL

Journal ref: Nanotechnology 19 (2008) 145711

InAs/InP single quantum wire formation and emission at 1.5 microns

Authors: B. Alén, D. Fuster, Y. González, L. González, J. Martínez-Pastor, M. U. González, J. M. García

Abstract: Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wi… ▽ More Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 microns. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process. △ Less

Submitted 5 October, 2006; v1 submitted 6 June, 2006; originally announced June 2006.

Comments: 4 pages and 3 figures submitted to Applied Physics Letters

Journal ref: APPLIED PHYSICS LETTERS 89, 233126 (2006)

Absorptive and dispersive optical responses of excitons in a single quantum dot

Authors: B. Alén, A. Högele, M. Kroner, S. Seidl, K. Karrai, R. J. Warburton, A. Badolato, G. Medeiros-Ribeiro, P. M. Petroff

Abstract: We have determined both the real and imaginary parts of the dielectric polarizability of a single quantum dot. The experiment is based on the observation and the manipulation of Rayleigh scattering at photon frequencies near the resonance of an optical exciton transition in single self-assembled InAs and InGaAs quantum dots. The interference between the narrow-band laser field and the weak elect… ▽ More We have determined both the real and imaginary parts of the dielectric polarizability of a single quantum dot. The experiment is based on the observation and the manipulation of Rayleigh scattering at photon frequencies near the resonance of an optical exciton transition in single self-assembled InAs and InGaAs quantum dots. The interference between the narrow-band laser field and the weak electromagnetic field coherently scattered by the quantum dot is detected with a cryogenic Fabry-Perot setup by combined differential transmission and reflectivity measurements. △ Less

Submitted 3 December, 2007; v1 submitted 5 September, 2005; originally announced September 2005.

Comments: 3 figures

Journal ref: Appl. Phys. Lett. 89, 123124 (2006)