-
Realization of nodal ring semimetal in pressurized black phosphorus
Authors:
Kazuto Akiba,
Yuichi Akahama,
Masashi Tokunaga,
Tatsuo C. Kobayashi
Abstract:
Topological semimetals are intriguing targets for exploring unconventional physical properties of massless fermions. Among them, nodal line or nodal ring semimetals have attracted attention for their unique one-dimensional band contact in momentum space and resulting nontrivial quantum phenomena. By field angular resolved magnetotransport measurements and theoretical calculations, we show that pre…
▽ More
Topological semimetals are intriguing targets for exploring unconventional physical properties of massless fermions. Among them, nodal line or nodal ring semimetals have attracted attention for their unique one-dimensional band contact in momentum space and resulting nontrivial quantum phenomena. By field angular resolved magnetotransport measurements and theoretical calculations, we show that pressurized black phosphorus (BP) is an ideal nodal ring semimetal with weak spin-orbit coupling, which has a sole and carrier density-tunable nodal ring isolated from other trivial bands. We also revealed that the large magnetoresistance effect and its field-angular dependence in semimetallic BP are due to highly anisotropic relaxation time. Our results establish pressurized BP as an elemental model material for exploring nontrivial quantum properties unique to the topological nodal ring.
△ Less
Submitted 15 April, 2024;
originally announced April 2024.
-
Thermoelectric response across the semiconductor-semimetal transition in black phosphorus
Authors:
Yuna Nakajima,
Yuichi Akahama,
Yo Machida
Abstract:
In spite of intensive studies on thermoelectricity in metals, little is known about thermoelectric response in semiconductors at low temperature. An even more fascinating and unanswered question is what happens to the Seebeck coefficient when the semiconductor turns to a metal. By precisely tuning the ground state of black phosphorus with pressure from the semiconducting to semimetallic state, we…
▽ More
In spite of intensive studies on thermoelectricity in metals, little is known about thermoelectric response in semiconductors at low temperature. An even more fascinating and unanswered question is what happens to the Seebeck coefficient when the semiconductor turns to a metal. By precisely tuning the ground state of black phosphorus with pressure from the semiconducting to semimetallic state, we track a systematic evolution of the Seebeck coefficient. Thanks to a manifest correlation between the Seebeck coefficient and resistivity, the Seebeck response in each conduction regime, i.e., intrinsic, saturation, extrinsic, and variable range hop** (VRH) regimes, is identified. In the former two regimes, the Seebeck coefficient behaves in accordance with the present theories, whereas in the later two regimes available theories do not give a satisfactory account for its response. However, by eliminating the extrinsic sample dependence in the resistivity $ρ$ and Seebeck coefficient $S$, the Peltier conductivity $α=S/ρ$ allows to unveil the intrinsic thermoelectric response, revealing vanishing fate for $α$ in the VRH regime. The emerged ionized impurity scattering on entry to the semimetallic state is easily surpassed by electron-electron scattering due to squeezing of screening length accompanied by an increase of carrier density with pressure. In the low temperature limit, a small number of carriers enhances a prefactor of $T$-linear Seebeck coefficient as large as what is observed in prototypical semimetals. A crucial but largely ignored role of carrier scattering in determining the magnitude and sign of the Seebeck coefficient is indicated by the observation that a sign reversal of the $T$-linear prefactor is concomitant with a change in dominant scattering mechanism for carriers.
△ Less
Submitted 15 August, 2023;
originally announced August 2023.
-
Pressure induced evolution of band structure in black phosphorus studied by $^{31}$P-NMR
Authors:
T. Fujii,
Y. Nakai,
Y. Akahama,
K. Ueda,
T. Mito
Abstract:
Two-dimensional layered semiconductor black phosphorus (BP), a promising pressure induced Dirac system as predicted by band structure calculations, has been studied by $^{31}$P-nuclear magnetic resonance. Band calculations have been also carried out to estimate the density of states $D(E)$. The temperature and pressure dependences of nuclear spin lattice relaxation rate $1/T_1$ in the semiconducti…
▽ More
Two-dimensional layered semiconductor black phosphorus (BP), a promising pressure induced Dirac system as predicted by band structure calculations, has been studied by $^{31}$P-nuclear magnetic resonance. Band calculations have been also carried out to estimate the density of states $D(E)$. The temperature and pressure dependences of nuclear spin lattice relaxation rate $1/T_1$ in the semiconducting phase are well reproduced using the derived $D(E)$, and the resultant pressure dependence of semiconducting gap is in good accordance with previous reports, giving a good confirmation that the band calculation on BP is fairly reliable. The present analysis of $1/T_1$ data with the complemental theoretical calculations allows us to extract essential information, such as the pressure dependences of $D(E)$ and chemical potential, as well as to decompose observed $1/T_1$ into intrinsic and extrinsic contributions. An abrupt increase in $1/T_1$ at 1.63GPa indicates that the semiconducting gap closes, resulting in an enhancement of conductivity.
△ Less
Submitted 14 May, 2019;
originally announced May 2019.
-
Double carrier transport in electron doped region in black phosphorus FET
Authors:
Kohei Hirose,
Toshihito Osada,
Kazuhito Uchida,
Toshihiro Taen,
Kenji Watanabe,
Takashi Taniguchi,
Yuichi Akahama
Abstract:
The double carrier transport has been observed in thin film black phosphorus (BP) field effect transistor (FET) devices in highly electron doped region. BP thin films with typical thickness of 15 nm were encapsulated by hexagonal boron nitride (h-BN) thin films to avoid degradation by air exposure. Their Hall mobility has reached 5300 cm2/Vs and 5400 cm2/Vs at 4.2 K in the hole and electron doped…
▽ More
The double carrier transport has been observed in thin film black phosphorus (BP) field effect transistor (FET) devices in highly electron doped region. BP thin films with typical thickness of 15 nm were encapsulated by hexagonal boron nitride (h-BN) thin films to avoid degradation by air exposure. Their Hall mobility has reached 5300 cm2/Vs and 5400 cm2/Vs at 4.2 K in the hole and electron doped regions, respectively. The gate voltage dependence of conductivity exhibits an anomalous shoulder structure in electron doped region. In addition, at gate voltages above the shoulder, the magnetoresistance changes to positive, and there appears an additional slow Shubnikov-de Haas oscillation. These results strongly suggest the appearance of the second carriers, which originate from the second subband with localized band edge.
△ Less
Submitted 6 November, 2018; v1 submitted 7 July, 2018;
originally announced July 2018.
-
Prolonged photo-carriers generated in a massive-and-anisotropic Dirac material
Authors:
Munisa Nurmamat,
Yukiaki Ishida,
Ryohei Yori,
Kazuki Sumida,
Siyuan Zhu,
Masashi Nakatake,
Yoshifumi Ueda,
Masaki Taniguchi,
Shik Shin,
Yuichi Akahama,
Akio Kimura
Abstract:
Transient electron-hole pairs generated in semiconductors can exhibit unconventional excitonic condensation. Anisotropy in the carrier mass is considered as the key to elongate the life time of the pairs, and hence to stabilize the condensation. Here we employ time- and angle-resolved photoemission spectroscopy to explore the dynamics of photo-generated carriers in black phosphorus. The electronic…
▽ More
Transient electron-hole pairs generated in semiconductors can exhibit unconventional excitonic condensation. Anisotropy in the carrier mass is considered as the key to elongate the life time of the pairs, and hence to stabilize the condensation. Here we employ time- and angle-resolved photoemission spectroscopy to explore the dynamics of photo-generated carriers in black phosphorus. The electronic structure above the Fermi level has been successfully observed, and a massive-and-anisotropic Dirac-type dispersions are confirmed; more importantly, we directly observe that the photo-carriers generated across the direct band gap have the life time exceeding 400 ps. Our finding confirms that black phosphorus is a suitable platform for excitonic condensations, and also open an avenue for future applications in broadband mid-infrared BP-based optoelectronic devices.
△ Less
Submitted 31 May, 2018;
originally announced May 2018.
-
Observation of Poiseuille Flow of Phonons in Black Phosphorus
Authors:
Yo Machida,
Alaska Subedi,
Kazuto Akiba,
Atsushi Miyake,
Masashi Tokunaga,
Yuichi Akahama,
Koichi Izawa,
Kamran Behnia
Abstract:
The travel of heat in insulators is commonly pictured as a flow of phonons scattered along their individual trajectory. In rare circumstances, momentum-conserving collision events dominate, and thermal transport becomes hydrodynamic. One of these cases, dubbed the Poiseuille flow of phonons, can occur in a temperature window just below the peak temperature of thermal conductivity. We report on a s…
▽ More
The travel of heat in insulators is commonly pictured as a flow of phonons scattered along their individual trajectory. In rare circumstances, momentum-conserving collision events dominate, and thermal transport becomes hydrodynamic. One of these cases, dubbed the Poiseuille flow of phonons, can occur in a temperature window just below the peak temperature of thermal conductivity. We report on a study of heat flow in bulk black phosphorus between 0.1 and 80 K. We find a thermal conductivity showing a faster than cubic temperature dependence between 5 and 12 K. Consequently, the effective phonon mean free path shows a nonmonotonic temperature dependence at the onset of the ballistic regime, with a size-dependent Knudsen minimum. These are hallmarks of Poiseuille flow previously observed in a handful of solids. Comparing the phonon dispersion in black phosphorus and silicon, we showthat the phase space for normal scattering events in black phosphorus is much larger. Our results imply that the most important requirement for the emergence of Poiseuille flowis the facility ofmomentum exchange between acoustic phonon branches. Proximity to a structural transition can be beneficial for the emergence of this behavior in clean systems, even when they do not exceed silicon in purity.
△ Less
Submitted 2 July, 2018; v1 submitted 16 February, 2018;
originally announced February 2018.
-
Two-carrier analyses of the transport properties of black phosphorus under pressure
Authors:
Kazuto Akiba,
Atsushi Miyake,
Yuichi Akahama,
Kazuyuki Matsubayashi,
Yoshiya Uwatoko,
Masashi Tokunaga
Abstract:
We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In semiconducting state at 0.29 GPa, the remarkable non-linear behavior in the Hall resistance is reasonably reproduced by assuming the coexistence of two kinds of hole with different densities and mobilities. On the other hand, two-carrier anal…
▽ More
We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In semiconducting state at 0.29 GPa, the remarkable non-linear behavior in the Hall resistance is reasonably reproduced by assuming the coexistence of two kinds of hole with different densities and mobilities. On the other hand, two-carrier analyses of the magnetotransport properties above 1.01 GPa suggest the coexistence of high mobility electron and hole carriers that have almost the same densities, i.e., nearly compensated semimetallic nature of black phosphorus. In the semimetallic state, analyses of both the two-carrier model and quantum oscillations indicate a systematic increase in the carrier densities as pressure increases. An observed sign inversion of Hall resistivity at low magnetic fields suggests the existence of high mobility electrons (\sim105 cm2 V-1 s-1) that is roughly ten times larger than that of holes, in the semimetallic black phosphorus. We conclude that the extremely large positive magnetoresistance that has been observed in semimetallic state cannot be reproduced by a conventional two-carrier model.
△ Less
Submitted 8 March, 2017; v1 submitted 14 November, 2016;
originally announced November 2016.
-
Anomalous Quantum Transport Properties in Semimetallic Black Phosphorus
Authors:
Kazuto Akiba,
Astushi Miyake,
Yuichi Akahama,
Kazuyuki Matsubayashi,
Yoshiya Uwatoko,
Hayato Arai,
Yuki Fuseya,
Masashi Tokunaga
Abstract:
Magnetoresistance in single crystals of black phosphorus is studied at ambient and hydrostatic pressures. In the semiconducting states at pressures below 0.71 GPa, the magnetoresistance shows periodic oscillations, which can be ascribed to the magneto-phonon resonance that is characteristic of high mobility semiconductors. In the metallic state above 1.64 GPa, the both transverse and longitudinal…
▽ More
Magnetoresistance in single crystals of black phosphorus is studied at ambient and hydrostatic pressures. In the semiconducting states at pressures below 0.71 GPa, the magnetoresistance shows periodic oscillations, which can be ascribed to the magneto-phonon resonance that is characteristic of high mobility semiconductors. In the metallic state above 1.64 GPa, the both transverse and longitudinal magnetoresistance show titanic increase with exhibiting superposed Shubnikov-de Haas oscillations. The observed small Fermi surfaces, high mobilities and light effective masses of carriers in semimetallic black phosphorus are comparable to those in the representative elemental semimetals of bismuth and graphite.
△ Less
Submitted 26 May, 2015;
originally announced May 2015.
