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Effect of Buffer Termination on Intermixing and Conductivity in LaTiO$_3$/SrTiO$_3$ Heterostructures Integrated on Si(100)
Authors:
Tongjie Chen,
Kamyar Ahmadi-Majlan,
Zheng Hui Lim,
Zhan Zhang,
Joseph H. Ngai,
Divine . P. Kumah
Abstract:
The control of chemical exchange across heterointerfaces formed between ultra-thin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. We show that cationic exchange across the interface between the Mott insulator, LaTiO$_3$(LTO) grown epitaxially on SrTiO$_3$(STO)-buffered Silicon by molecular beam epitaxy depends strongly…
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The control of chemical exchange across heterointerfaces formed between ultra-thin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. We show that cationic exchange across the interface between the Mott insulator, LaTiO$_3$(LTO) grown epitaxially on SrTiO$_3$(STO)-buffered Silicon by molecular beam epitaxy depends strongly on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron X-ray crystal truncation rods and reciprocal space map**, an enhanced conductivity in STO/LTO/SrO- terminated STO buffers compared to heterostructures with TiO$_2$-terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La$_{1-x}$Sr$_x$TiO$_3$. La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.
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Submitted 17 September, 2021;
originally announced September 2021.
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Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge
Authors:
Tongjie Chen,
Kamyar Ahmadi-Majlan,
Zheng Hui Lim,
Zhan Zhang,
Joseph H. Ngai,
Alexander F. Kemper,
Divine P. Kumah
Abstract:
The interfacial structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films grown on semiconducting Ge substrates are investigated by synchrotron X-ray diffraction and first-principles density functional theory. By systematically tuning Zr content x, the effects of bonding at the interface and epitaxial strain on the physical structure of the film can be distinguished. The interfacial perovskite layers are found…
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The interfacial structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films grown on semiconducting Ge substrates are investigated by synchrotron X-ray diffraction and first-principles density functional theory. By systematically tuning Zr content x, the effects of bonding at the interface and epitaxial strain on the physical structure of the film can be distinguished. The interfacial perovskite layers are found to be polarized as a result of cation-anion ionic displacements perpendicular to the perovskite/semiconductor interface. We find a correlation between the observed buckling and valence band offsets at the SrZr$_{x}$Ti$_{1-x}$O$_3$/Ge interface. The theoretical valence band offsets for the polar structures are in agreement with reported X-ray photoelectron spectroscopy measurements. These results have important implications for the integration of functional oxide materials with established semiconductor based technologies.
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Submitted 28 June, 2018;
originally announced June 2018.
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Superconducting epitaxial YBa2Cu3O7-δ on SrTiO3 buffered Si (001)
Authors:
K. Ahmadi-Majlan,
H. Zhang,
X. Shen,
M. J. Moghadam,
M. Chrysler,
P. Conlin,
R. Hensley,
D. Su,
J. Y. T. Wei,
J. H. Ngai
Abstract:
Thin films of optimally-doped (001)-oriented YBa2Cu3O7-δ are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7-δ films exhibiting high transition temperatures to…
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Thin films of optimally-doped (001)-oriented YBa2Cu3O7-δ are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7-δ films exhibiting high transition temperatures to be integrated on Si. For a 30 nm thick SrTiO3 buffer, 50 nm thick YBa2Cu3O7-δ films that exhibit a transition temperature of ~ 93 K, and a narrow transition width (< 5 K) are achieved. The integration of single crystalline YBa2Cu3O7-δ on Si (001) paves the way for the potential exploration of cuprate materials in a variety of applications.
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Submitted 24 October, 2017;
originally announced October 2017.
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Atomic layer control of metal-insulator behavior in oxide quantum wells integrated directly on silicon
Authors:
Kamyar Ahmadi-Majlan,
Tong-Jie Chen,
Zheng Hui Lim,
Patrick Conlin,
Ricky Hensley,
Dong Su,
Hanghui Chen,
Divine P. Kumah,
Joseph H. Ngai
Abstract:
We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 quantum wells integrated directly on Si(100). The quantum wells exhibit metallic transport described by Fermi-liquid behavior. Carriers arise from both charge transfer from the LaTiO3 to SrTiO3 and oxygen vacancies in the latter. By reducing the thickness of the quantum wells, an enhancement in carrier-carrier scatter…
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We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 quantum wells integrated directly on Si(100). The quantum wells exhibit metallic transport described by Fermi-liquid behavior. Carriers arise from both charge transfer from the LaTiO3 to SrTiO3 and oxygen vacancies in the latter. By reducing the thickness of the quantum wells, an enhancement in carrier-carrier scattering is observed, and insulating transport emerges. Consistent with a Mott-driven transition in bulk rare-earth titanates, the insulating behavior is described by activated transport, and the onset of insulating transport occurs near 1 electron per Ti occupation within the SrTiO3 well. We also discuss the role that structure and gradients in strain may play in enhancing the carrier density. The manipulation of metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.
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Submitted 24 October, 2017;
originally announced October 2017.
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Ferroelectric metal-oxide-semiconductor capacitors using ultrathin single crystalline SrZrxTi1-xO3
Authors:
Reza M. Moghadam,
Zhiyong Xiao,
Kamyar Ahmadi-Majlan,
Everett D. Grimley,
Mark Bowden,
Phuong-Vu Ong,
Scott A. Chambers,
James M. Lebeau,
Xia Hong,
Peter V. Sushko,
Joseph H. Ngai
Abstract:
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-…
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The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x = 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm corresponding to an equivalent-oxide-thickness of just 1.0 nm exhibit a ~ 2 V hysteretic window in the capacitance-voltage characteristics. The development of ferroelectric MOS capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.
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Submitted 28 February, 2017;
originally announced March 2017.
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Band-gap engineering at a semiconductor - crystalline oxide interface
Authors:
J. Moghadam,
K. Ahmadi-Majlan,
X. Shen,
T. Droubay,
M. Bowden,
M. Chrysler,
D. Su,
S. A. Chambers,
J. H. Ngai
Abstract:
The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is controlling the manner in which their bands align at interfaces. Here we apply principles of band gap engineering traditionally used at heterojunctions between…
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The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is controlling the manner in which their bands align at interfaces. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr$_{x}$Ti$_{1-x}$O$_3$ and Ge, in which the band-gap of the former is enhanced with Zr content $x$. We present structural and electrical characterization of SrZr$_{x}$Ti$_{1-x}$O$_3$-Ge heterojunctions for $x$ = 0.2 to 0.75 and demonstrate the band offset can be tuned from type-II to type-I, with the latter being verified using photoemission measurements. The type-I band offset provides a platform to integrate the dielectric, ferroelectric and ferromagnetic functionalities of oxides with semiconducting devices.
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Submitted 27 October, 2014;
originally announced October 2014.
