A Search for Alternative Solid Rocket Propellant Oxidizers
Authors:
Pujan Biswas,
Parmanand Ahirwar,
S. Nandagopal,
Arvind Kumar,
I. N. N. Namboothiri,
Arindrajit Chowdhury,
Neeraj Kumbhakarna
Abstract:
Carbon-based caged and heterocyclic compounds tend to have strained molecular structures leading to high heats of formation and energetic behavior. In the current paper, molecular modelling calculations for 10 caged compounds of this type along with 2 strained aliphatic compounds and 4 simple cyclic chains are presented in view of their possible use as oxidizers in propulsion applications. Density…
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Carbon-based caged and heterocyclic compounds tend to have strained molecular structures leading to high heats of formation and energetic behavior. In the current paper, molecular modelling calculations for 10 caged compounds of this type along with 2 strained aliphatic compounds and 4 simple cyclic chains are presented in view of their possible use as oxidizers in propulsion applications. Density functional theory (B3LYP) was employed for the geometry optimization of the proposed molecular structure using the 6-311++G(d,p) basis set. Heats of formation of the compounds were calculated using the molecular modeling results and their specific impulses were computed using the NASA CEA [1] software package to evaluate their potentials as propellant oxidizers.
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Submitted 31 January, 2022;
originally announced February 2022.
Telecommunication band InAs quantum dots and dashes embedded in different barrier materials
Authors:
Nahid A Jahan,
Claus Hermannstädter,
Jae-Hoon Huh,
Hirotaka Sasakura,
Thomas J Rotter,
Pankaj Ahirwar,
Ganesh Balakrishnan,
Kouichi Akahane,
Masahide Sasaki,
Hidekazu Kumano,
Ikuo Suemune
Abstract:
We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution on the alloy composition of the barrier materials, InGaAlAs, and on the existence of a wetting layer. Carrier escape and transfer are discussed based on temper…
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We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution on the alloy composition of the barrier materials, InGaAlAs, and on the existence of a wetting layer. Carrier escape and transfer are discussed based on temperature dependent photoluminescence measurements and theoretical considerations about the heterostructures' confinement energies and band structure. We propose two different contributions to the thermal quenching, which can explain the observations for both the quantum dot and dash samples. Among these one is a unique phenomenon for high density quantum dot/dash ensembles which is related to significant inter-dot/dash coupling. With the goal ahead to use these dots and dashes for quantum optical applications on the single-dot/dash level in the telecommunication C band as well as at elevated temperatures we present first steps towards the realization of such devices.
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Submitted 7 February, 2012;
originally announced February 2012.
