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Improper two-dimensional electron gas formation
Authors:
Daniel Bennett,
Pablo Aguado-Puente,
Emilio Artacho,
Nicholas Bristowe
Abstract:
In spite of the interest in the two-dimensional electron gases (2DEGs) experimentally found at surfaces and interfaces, important uncertainties remain about the observed insulator--metal transitions (IMTs). Here we show how an explicit improper coupling of carrier sources with a relevant soft mode significantly affects the transition. The analysis presented here for 2DEGs at polar interfaces is ba…
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In spite of the interest in the two-dimensional electron gases (2DEGs) experimentally found at surfaces and interfaces, important uncertainties remain about the observed insulator--metal transitions (IMTs). Here we show how an explicit improper coupling of carrier sources with a relevant soft mode significantly affects the transition. The analysis presented here for 2DEGs at polar interfaces is based on group theory, Landau-Ginzburg theory, and illustrated with first-principles calculations for the prototypical case of the LaAlO$_3$/SrTiO$_3$ interface, for which such a structural transition has recently been observed. This direct coupling implies that the appearance of the soft mode is always accompanied by carriers. For sufficiently strong coupling an avalanche-like first-order IMT is predicted.
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Submitted 5 January, 2024;
originally announced January 2024.
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Coupling between tilts and charge carriers at polar-nonpolar perovskite interfaces
Authors:
Daniel Bennett,
Pablo Aguado-Puente,
Emilio Artacho,
Nicholas Bristowe
Abstract:
The phenomenological theory for the polar instability giving rise to a two-dimensional electron gas at perovskite interfaces is hereby extended to include the coupling to perovskite tilts. A Landau theory for homogeneous tilts is first explored, setting the scene for the further, more realistic Landau-Ginzburg theory describing varying tilt amplitudes across a thin film. The theory is also general…
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The phenomenological theory for the polar instability giving rise to a two-dimensional electron gas at perovskite interfaces is hereby extended to include the coupling to perovskite tilts. A Landau theory for homogeneous tilts is first explored, setting the scene for the further, more realistic Landau-Ginzburg theory describing varying tilt amplitudes across a thin film. The theory is also generalized to account for the response to an applied electric field normal to the interface, which allows a finer control on phase transitions. The conventionally described physics of a single metal-insulator transition is substantially enriched by the coupling, the model describing various scenarios with one or two transitions, possibly continuous or discontinuous. First-principles calculations permit the estimation of the parameters defining the model, which have been calculated for the interface between lanthanum aluminate and strontium titanate.
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Submitted 19 September, 2022; v1 submitted 27 June, 2022;
originally announced June 2022.
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Thermal topological phase transition in SnTe from \emph{ab-initio} calculations
Authors:
Pablo Aguado-Puente,
Piotr Chudzinski
Abstract:
One of the key issues in the physics of topological insulators is whether the topologically non-trivial properties survive at finite temperatures and, if so, whether they disappear only at the temperature of topological gap closing. Here, we study this problem, using quantum fidelity as a measure, by means of \emph{ab-initio} methods supplemented by an effective dissipative theory built on the top…
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One of the key issues in the physics of topological insulators is whether the topologically non-trivial properties survive at finite temperatures and, if so, whether they disappear only at the temperature of topological gap closing. Here, we study this problem, using quantum fidelity as a measure, by means of \emph{ab-initio} methods supplemented by an effective dissipative theory built on the top of the \emph{ab-initio} electron and phonon band structures. In the case of SnTe, the prototypical crystal topological insulator, we reveal the presence of a characteristic temperature, much lower than the gap-closing one, that marks a loss of coherence of the topological state. The transition is not present in a purely electronic system but it appears once we invoke coupling with a dissipative bosonic bath. Features in the dependence with temperature of the fidelity susceptibility can be related to changes in the band curvature, but signatures of a topological phase transition appear in the fidelity only though the non-adiabatic coupling with soft phonons. Our argument is valid for valley topological insulators, but in principle can be generalized to the broader class of topological insulators which host any symmetry-breaking boson.
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Submitted 24 August, 2022; v1 submitted 1 March, 2022;
originally announced March 2022.
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Transferring Orbital Angular Momentum to an Electron Beam Reveals Toroidal and Chiral Order
Authors:
Kayla X. Nguyen,
Yi Jiang,
Michael C. Cao,
Prafull Purohit,
Ajay K. Yadav,
Pablo García-Fernández,
Mark W. Tate,
Celesta S. Chang,
Pablo Aguado-Puente,
Jorge Íñiguez,
Fernando Gomez-Ortiz,
Sol M. Gruner,
Javier Junquera,
Lane W. Martin,
Ramamoorthy Ramesh,
D. A. Muller
Abstract:
Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not coupl…
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Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not couple directly to linear external fields. To develop a mechanism that can control switching in polarization vortices, we utilize a high-energy electron beam and show that transverse currents are generated by polar order in the ballistic limit. We find that the presence of an electric toroidal moment in a ferro-rotational phase transfers a measurable torque and orbital angular momentum to the electron beam. Furthermore, we find that the complex polarization patterns, observed in these heterostructures, are microscopically chiral with a non-trivial axial component of the polarization. This chirality opens the door for the coupling of ferroelectric and optical properties.
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Submitted 9 December, 2020; v1 submitted 7 December, 2020;
originally announced December 2020.
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Towards temperature-induced topological phase transition in SnTe: A first principles study
Authors:
José D. Querales-Flores,
Pablo Aguado-Puente,
Đorđe Dangić,
Jiang Cao,
Piotr Chudzinski,
Tchavdar N. Todorov,
Myrta Grüning,
Stephen Fahy,
Ivana Savić
Abstract:
The temperature renormalization of the bulk band structure of a topological crystalline insulator, SnTe, is calculated using first principles methods. We explicitly include the effect of thermal-expansion-induced modification of electronic states and their band inversion on electron-phonon interaction. We show that the direct gap decreases with temperature, as both thermal expansion and electron-p…
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The temperature renormalization of the bulk band structure of a topological crystalline insulator, SnTe, is calculated using first principles methods. We explicitly include the effect of thermal-expansion-induced modification of electronic states and their band inversion on electron-phonon interaction. We show that the direct gap decreases with temperature, as both thermal expansion and electron-phonon interaction drive SnTe towards the phase transition to a topologically trivial phase as temperature increases. The band gap renormalization due to electron-phonon interaction exhibits a non-linear dependence on temperature as the material approaches the phase transition, while the lifetimes of the conduction band states near the band edge show a non-monotonic behavior with temperature. These effects should have important implications on bulk electronic and thermoelectric transport in SnTe and other topological insulators.
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Submitted 9 June, 2020; v1 submitted 24 April, 2020;
originally announced April 2020.
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Thermal conductivity of porous polycrystalline PbTe
Authors:
Javier F. Troncoso,
Piotr Chudzinski,
Tchavdar N. Todorov,
Pablo Aguado-Puente,
Myrta Grüning,
Jorge J. Kohanoff
Abstract:
PbTe is a leading thermoelectric material at intermediate temperatures, largely thanks to its low lattice thermal conductivity. However, its efficiency is too low to compete with other forms of power generation. This efficiency can be effectively enhanced by designing nanostructures capable of scattering phonons over a wide range of length scales to reduce the lattice thermal conductivity. The pre…
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PbTe is a leading thermoelectric material at intermediate temperatures, largely thanks to its low lattice thermal conductivity. However, its efficiency is too low to compete with other forms of power generation. This efficiency can be effectively enhanced by designing nanostructures capable of scattering phonons over a wide range of length scales to reduce the lattice thermal conductivity. The presence of grain boundaries can reduce the thermal conductivity to $\sim 0.5$ Wm$^{-1}$K$^{-1}$ for small vacancy concentrations and grain sizes. However, grains anneal at finite temperature, and equilibrium and metastable grain size distributions determine the extent of the reduction in thermal conductivity. In the present work, we propose a phase-field model informed by molecular dynamics simulations to study the annealing process in PbTe and how it is affected by the presence of grain boundaries and voids. We find that the thermal conductivity of PbTe is reduced by up to 35\% in the porous material at low temperatures. We observe that a phase transition at a finite density of voids governs the kinetics of impeding grain growth by Zener pinning.
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Submitted 24 October, 2020; v1 submitted 15 April, 2020;
originally announced April 2020.
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$GW$ study of pressure-induced topological insulator transition in group IV-tellurides
Authors:
Pablo Aguado-Puente,
Stephen Fahy,
Myrta Grüning
Abstract:
We calculate the electronic structure of the narrow gap semiconductors PbTe, SnTe and GeTe in the cubic phase using density functional theory (DFT) and the $G_0W_0$ method. Within DFT, we show that the band ordering obtained with a conventional semilocal exchange-correlation approximation is correct for SnTe and GeTe but wrong for PbTe. The correct band ordering at the high-symmetry point L is rec…
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We calculate the electronic structure of the narrow gap semiconductors PbTe, SnTe and GeTe in the cubic phase using density functional theory (DFT) and the $G_0W_0$ method. Within DFT, we show that the band ordering obtained with a conventional semilocal exchange-correlation approximation is correct for SnTe and GeTe but wrong for PbTe. The correct band ordering at the high-symmetry point L is recovered adding $G_0W_0$ quasiparticle corrections. However, one-shot $G_0W_0$ produces artifacts in the band structure due to the wrong orbital character of the DFT single-particle states at the band edges close to L. We show that in order to correct these artifacts it is enough to consider the off-diagonal elements of the $G_0W_0$ self-energy corresponding to these states. We also investigate the pressure dependence of the band gap for these materials and the possibility of a transition from a trivial to a non-trivial topology of the band structure. For PbTe, we predict the band crossover and topological transition to occur at around 4.8 GPa. For GeTe, we estimate the topological transition to occur at 1.9 GPa in the constrained cubic phase, a pressure lower than the one of the structural phase transition from rombohedral to cubic. SnTe is a crystalline topological insulator at ambient pressure, and the transition into a trivial topology would take place under a volume expansion of approximately $10\%$.
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Submitted 17 March, 2020; v1 submitted 15 March, 2020;
originally announced March 2020.
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Effect of intrinsic defects on the thermal conductivity of PbTe from classical molecular dynamics simulations
Authors:
Javier F. Troncoso,
Pablo Aguado-Puente,
Jorge Kohanoff
Abstract:
Despite being the archetypal thermoelectric material, still today some of the most exciting advances in the efficiency of these materials are being achieved by tuning the properties of PbTe. Its inherently low lattice thermal conductivity can be lowered to its fundamental limit by designing a structure capable of scattering phonons over a wide range of length scales. Intrinsic defects, such as vac…
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Despite being the archetypal thermoelectric material, still today some of the most exciting advances in the efficiency of these materials are being achieved by tuning the properties of PbTe. Its inherently low lattice thermal conductivity can be lowered to its fundamental limit by designing a structure capable of scattering phonons over a wide range of length scales. Intrinsic defects, such as vacancies or grain boundaries, can and do play the role of these scattering sites. Here we assess the effect of these defects by means of molecular dynamics simulations. For this we purposely parametrize a Buckingham potential that provides an excellent description of the thermal conductivity of this material over a wide temperature range. Our results show that intrinsic point defects and grain boundaries can reduce the lattice conductivity of PbTe down to a quarter of its bulk value. By studying the size dependence we also show that typical defect concentrations and grain sizes realized in experiments normally correspond to the bulk lattice conductivity of pristine PbTe.
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Submitted 23 September, 2019; v1 submitted 22 November, 2018;
originally announced November 2018.
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Two-dimensional electron gas at the PbTiO$_3$/SrTiO$_3$ interface: an ab initio study
Authors:
Binglun Yin,
Pablo Aguado-Puente,
Shaoxing Qu,
Emilio Artacho
Abstract:
In the polar catastrophe scenario, polar discontinuity accounts for the driving force of the formation of a two-dimensional electron gas (2DEG) at the interface between polar and non-polar insulators. In this paper, we substitute the usual, non-ferroelectric, polar material with a ferroelectric thin film and use the ferroelectric polarization as the source for polar discontinuity. We use ab initio…
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In the polar catastrophe scenario, polar discontinuity accounts for the driving force of the formation of a two-dimensional electron gas (2DEG) at the interface between polar and non-polar insulators. In this paper, we substitute the usual, non-ferroelectric, polar material with a ferroelectric thin film and use the ferroelectric polarization as the source for polar discontinuity. We use ab initio simulations to systematically investigate the stability, formation and properties of the two-dimensional free-carrier gases formed in PbTiO$_3$/SrTiO$_3$ heterostructures under realistic mechanical and electrical boundary conditions. Above a critical thickness, the ferroelectric layers can be stabilized in the out-of-plane monodomain configuration due to the electrostatic screening provided by the free-carriers. Our simulations also predict that the system can be switched between three stable configurations (polarization up, down or zero), allowing the non-volatile manipulation of the free charge density and sign at the interface. Furthermore, the link between ferroelectric polarization and free charge density demonstrated by our analysis constitutes compelling support for the polar catastrophe model that is used to rationalize the formation of 2DEG at oxide interfaces.
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Submitted 1 September, 2015; v1 submitted 16 June, 2015;
originally announced June 2015.
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Model of two-dimensional electron gas formation at ferroelectric interfaces
Authors:
Pablo Aguado-Puente,
Nicholas. C. Bristowe,
Binglun Yin,
Raku Shirasawa,
Philippe Ghosez,
Peter B. Littlewood,
Emilio Artacho
Abstract:
The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here we study under what circumstances similar processes can also take place underneath ferroelectric thin films. We use a simple Landau model to demonstrate that in the absence of extr…
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The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here we study under what circumstances similar processes can also take place underneath ferroelectric thin films. We use a simple Landau model to demonstrate that in the absence of extrinsic screening mechanisms a monodomain phase can be stabilized in ferroelectric films by means of an electronic reconstruction. Unlike in the LaAlO$_3$/SrTiO$_3$ heterostructure, the emergence with thickness of the free charge at the interface is discontinuous. This prediction is confirmed by performing first principles simulations of free standing slabs of PbTiO$_3$. The model is also used to predict the response of the system to an applied electric field, demonstrating that the two-dimensional electron gas can be switched on and off discontinuously and in a non-volatile fashion. Furthermore, the reversal of the polarization can be used to switch between a two-dimensional electron gas and a two-dimensional hole gas, which should, in principle, have very different transport properties. We discuss the possible formation of polarization domains and how such configuration competes with the spontaneous accumulation of free charge at the interfaces.
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Submitted 29 July, 2015; v1 submitted 24 March, 2015;
originally announced March 2015.
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First-principles study of metal-induced gap states in metal/oxide interfaces and their relation with the complex band structure
Authors:
Pablo Aguado-Puente,
Javier Junquera
Abstract:
We develop a simple model to compute the energy-dependent decay factors of metal-induced gap states in metal/insulator interfaces considering the collective behaviour of all the bulk complex bands in the gap of the insulator. The agreement between the penetration length obtained from the model (considering only bulk properties) and full first-principles simulations of the interface (including expl…
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We develop a simple model to compute the energy-dependent decay factors of metal-induced gap states in metal/insulator interfaces considering the collective behaviour of all the bulk complex bands in the gap of the insulator. The agreement between the penetration length obtained from the model (considering only bulk properties) and full first-principles simulations of the interface (including explicitly the interfaces) is good. The influence of the electrodes and the polarization of the insulator is analyzed. The method simplifies the process of screening materials to be used in Schootky barriers or in the design of giant tunneling electroresistance and magnetoresistance devices.
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Submitted 10 January, 2014; v1 submitted 18 March, 2013;
originally announced March 2013.
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Lattice screening of the polar catastrophe and hidden in-plane polarization in KNbO$_{3}$/BaTiO$_{3}$ interfaces
Authors:
Pablo García-Fernández,
Pablo Aguado-Puente,
Javier Junquera
Abstract:
We have carried out first-principles simulations, based on density functional theory, to obtain the atomic and electronic structure of (001) BaTiO$_{3}$/KNbO$_{3}$ interfaces in an isolated slab geometry. We tried different types of structures including symmetric and asymmetric configurations, and variations in the thickness of the constituent materials. The spontaneous polarization of the layer-b…
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We have carried out first-principles simulations, based on density functional theory, to obtain the atomic and electronic structure of (001) BaTiO$_{3}$/KNbO$_{3}$ interfaces in an isolated slab geometry. We tried different types of structures including symmetric and asymmetric configurations, and variations in the thickness of the constituent materials. The spontaneous polarization of the layer-by-layer non neutral material (KNbO$_{3}$) in these interfaces cancels out almost exactly the "built-in" polarization responsible for the electronic reconstruction. As a consequence, the so-called polar catastrophe is quenched and all the simulated interfaces are insulating. A model, based on the modern theory of polarization and basic electrostatics, allows an estimation of the critical thickness for the formation of the two-dimensional electron gas between 42 and 44 KNbO$_{3}$ unit cells. We also demonstrate the presence of an unexpected in-plane polarization in BaTiO$_{3}$ localized at the $p$-type TiO$_2$/KO interface, even under in-plane compressive strains. We expect this in-plane polarization to remain hidden due to angular averaging during quantum fluctuations unless the symmetry is broken with small electric fields.
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Submitted 3 December, 2012;
originally announced December 2012.
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Domain walls in a perovskite oxide with two primary structural order parameters: first-principles study of BiFeO$_3$
Authors:
Oswaldo Diéguez,
Pablo Aguado-Puente,
Javier Junquera,
Jorge Íñiguez
Abstract:
We present a first-principles study of ferroelectric domain walls (FE-DWs) in multiferroic BiFeO$_3$ (BFO), a material in which the FE order parameter coexists with anti-ferrodistortive (AFD) modes involving rotations of the O$_6$ octahedra. We find that the energetics of the DWs are dominated by the capability of the domains to match their O$_6$ octahedra rotation patterns at the plane of the wal…
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We present a first-principles study of ferroelectric domain walls (FE-DWs) in multiferroic BiFeO$_3$ (BFO), a material in which the FE order parameter coexists with anti-ferrodistortive (AFD) modes involving rotations of the O$_6$ octahedra. We find that the energetics of the DWs are dominated by the capability of the domains to match their O$_6$ octahedra rotation patterns at the plane of the wall, so that the distortion of the oxygen groups is minimized. Our results thus indicate that, in essence, it is the discontinuity in the AFD order parameter, and not the change in the electric polarization, what decides which crystallographic planes are most likely to host BFO's FE-DWs. Such a result clearly suggests that the O$_6$ rotational patterns play a primary role in the FE phase of this compound, in contrast with the usual (implicit) assumption that they are subordinated to the FE order parameter. Our calculations show that, for the most favorable cases in BFO, the DW energy amounts to a several tens of mJ/m$^2$, which is higher than what was computed for other ferroelectric perovskites with no O$_6$ rotations. Interestingly, we find that the structure of BFO at the most stable DWs resembles the atomic arrangements that are characteristic of low-lying (meta)stable phases of the material. Further, we argue that our results for the DWs of bulk BFO are related with the nanoscale-twinned structures that Prosandeev et al. [Adv. Funct. Mats. (2012), doi: 10.1002/adfm.201201467] have recently predicted to occur in this compound, and suggest that BFO can be viewed as a polytypic material. Our work thus contributes to shape a coherent picture of the structural variants that BFO can present and the way in which they are related.
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Submitted 21 November, 2012;
originally announced November 2012.
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Ferroelectricity in ultrathin film capacitors
Authors:
Céline Lichtensteiger,
Pavlo Zubko,
Massimiliano Stengel,
Pablo Aguado-Puente,
Jean-Marc Triscone,
Philippe Ghosez,
Javier Junquera
Abstract:
Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for the future development of these devices.
As…
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Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for the future development of these devices.
As the experimental advances in materials preparation and characterization have come together with great progress in theoretical modeling of ferroelectrics, both theorists and experimentalists can finally probe the same length and time scales. This allows realtime feedback between theory and experiment, with new discoveries now routinely made both in the laboratory and on the computer. Throughout this chapter, we will highlight the recent advances in density functional theory based modeling and the role it played in our understanding of ultrathin ferroelectrics. We will begin with a brief introduction to ferroelectricity and ferroelectric oxides, followed by an overview of the major theoretical developments. We will then discuss some of the subtleties of ferroelectricity in perovskite oxides, before turning our attention to the main subject of the chapter -- ferroelectricity in ultrathin films. We will discuss in detail the influence of the mechanical, electrical and chemical boundary conditions on the stability of the polar state in a parallel plate capacitor geometry, introducing the notion of depolarization fields that tend to destabilize ferroelectricity. We will look at other ways in which a thin ferroelectric can preserve its polar state, focusing on ferroelectric domains and domain walls. Finally, we will briefly discuss artificially layered ferroelectrics and the potential they hold as tailor-made materials for electronic applications.
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Submitted 27 August, 2012;
originally announced August 2012.
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First-principles simulations on the structural and energetic properties of domains in PbTiO$_3$/SrTiO$_3$ superlattices
Authors:
Pablo Aguado-Puente,
Javier Junquera
Abstract:
We report first-principles calculations, within the density functional theory, on the structural and energetic properties of 180$^\circ$ stripe domains in (PbTiO$_{3}$)$_{n}$/(SrTiO$_{3}$)$_{n}$ superlattices. For the explored periodicities ($n$=3 and 6) we find that the polydomain structures compete in energy with the monodomain phases. Our results suggest the progressive transition, as a functio…
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We report first-principles calculations, within the density functional theory, on the structural and energetic properties of 180$^\circ$ stripe domains in (PbTiO$_{3}$)$_{n}$/(SrTiO$_{3}$)$_{n}$ superlattices. For the explored periodicities ($n$=3 and 6) we find that the polydomain structures compete in energy with the monodomain phases. Our results suggest the progressive transition, as a function of $n$, from a strong to a weak electrostatic coupling regime between the SrTiO$_{3}$ and PbTiO$_{3}$ layers. Structurally, they display continuous rotation of polarization connecting 180$^\circ$ domains. A large offset between [100] atomic rows across the domain wall and huge strain gradients are observed. The domain wall energy is very isotropic, depending very weakly on the stripe orientation.
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Submitted 24 February, 2012;
originally announced February 2012.
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Interplay of couplings between antiferrodistortive, ferroelectric, and strain degrees of freedom in monodomain PbTiO$_{3}$/SrTiO$_{3}$ superlattices
Authors:
Pablo Aguado-Puente,
Pablo García-Fernández,
Javier Junquera
Abstract:
We report first-principles calculations on the coupling between epitaxial strain, polarization, and oxygen octahedra rotations in monodomain (PbTiO$_{3}$)$_{n}$/(SrTiO$_{3}$)$_{n}$ superlattices. We show how the interplay between (i) the epitaxial strain and (ii) the electrostatic conditions, can be used to control the orientation of the main axis of the system. The electrostatic constrains at the…
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We report first-principles calculations on the coupling between epitaxial strain, polarization, and oxygen octahedra rotations in monodomain (PbTiO$_{3}$)$_{n}$/(SrTiO$_{3}$)$_{n}$ superlattices. We show how the interplay between (i) the epitaxial strain and (ii) the electrostatic conditions, can be used to control the orientation of the main axis of the system. The electrostatic constrains at the interface facilitate the rotation of the polarization and, as a consequence, we predict large piezoelectric responses at epitaxial strains smaller than those that would be required considering only strain effects. In addition, ferroelectric (FE) and antiferrodistortive (AFD) modes are strongly coupled. Usual steric arguments cannot explain this coupling and a covalent model is proposed to account for it. The energy gain due to the FE-AFD coupling decreases with the periodicity of the superlattice, becoming negligible for $n \ge 3$.
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Submitted 18 November, 2011; v1 submitted 4 May, 2011;
originally announced May 2011.
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Band alignment at metal/ferroelectric interfaces: insights and artifacts from first principles
Authors:
Massimiliano Stengel,
Pablo Aguado-Puente,
Nicola A. Spaldin,
Javier Junquera
Abstract:
Based on recent advances in first-principles theory, we develop a general model of the band offset at metal/ferroelectric interfaces. We show that, depending on the polarization of the film, a pathological regime might occur where the metallic carriers populate the energy bands of the insulator, making it metallic. As the most common approximations of density functional theory are affected by a sy…
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Based on recent advances in first-principles theory, we develop a general model of the band offset at metal/ferroelectric interfaces. We show that, depending on the polarization of the film, a pathological regime might occur where the metallic carriers populate the energy bands of the insulator, making it metallic. As the most common approximations of density functional theory are affected by a systematic underestimation of the fundamental band gap of insulators, this scenario is likely to be an artifact of the simulation. We provide a number of rigorous criteria, together with extensive practical examples, to systematically identify this problematic situation in the calculated electronic and structural properties of ferroelectric systems. We discuss our findings in the context of earlier literature studies, where the issues described in this work have often been overlooked. We also discuss formal analogies to the physics of polarity compensation at LaAlO3/SrTiO3 interfaces, and suggest promising avenues for future research.
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Submitted 2 March, 2011;
originally announced March 2011.
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Ferromagnetic-like closure domains in ferroelectric ultrathin films
Authors:
Pablo Aguado-Puente,
Javier Junquera
Abstract:
We simulate from first-principles the energetic, structural, and electronic properties of ferroelectric domains in ultrathin capacitors made of a few unit cells of BaTiO$_3$ between two metallic SrRuO$_3$ electrodes in short circuit. The domains are stabilized down to two unit cells, adopting the form of a domain of closure, common in ferromagnets but only recently detected experimentally in fer…
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We simulate from first-principles the energetic, structural, and electronic properties of ferroelectric domains in ultrathin capacitors made of a few unit cells of BaTiO$_3$ between two metallic SrRuO$_3$ electrodes in short circuit. The domains are stabilized down to two unit cells, adopting the form of a domain of closure, common in ferromagnets but only recently detected experimentally in ferroelectric thin films. The domains are closed by the in-plane relaxation of the atoms in the first SrO layer of the electrode, that behaves more like SrO in highly polarizable SrTiO$_3$ than in metallic SrRuO$_3$. Even if small, these lateral displacements are essential to stabilize the domains, and might provide some hints to explain why some systems break into domains while others remain in a monodomain configuration. An analysis of the electrostatic potential reveals preferential points of pinning for charged defects at the ferroelectric-electrode interface, possibly playing a major role in films fatigue.
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Submitted 8 October, 2007;
originally announced October 2007.
