Showing 1–6 of 6 results for author: Aetukuri, N P

Modulation-Do** a Correlated Electron Insulator

Authors: Debasish Mondal, Smruti Rekha Mahapatra, Abigail M Derrico, Rajeev Kumar Rai, Jay R Paudel, Christoph Schlueter, Andrei Gloskovskii, Rajdeep Banerjee, Frank M F DeGroot, Dipankar D Sarma, Awadhesh Narayan, Pavan Nukala, Alexander X Gray, Naga Phani B Aetukuri

Abstract: Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modu… ▽ More Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard x-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5x10^21 cm^(-3) without inducing any measurable structural changes. We find that the MIT temperature (T_MIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at do** concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-do** as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions. △ Less

Submitted 7 January, 2023; originally announced January 2023.

Comments: Main paper 21 pages, 5 Figures. Supporting Information, 18 Pages,15 SI Figures and 1 SI Section

An interlayer with low solubility for lithium enhances tolerance to dendrite growth in solid state electrolytes

Authors: Vikalp Raj, Varun R Kankanallu, Bibhatsu Kuiri, Naga Phani B Aetukuri

Abstract: All solid state Li-ion batteries employing metallic lithium as an anode offer higher energy densities while also being safer than conventional liquid electrolyte based Li-ion batteries. However, the growth of tiny filaments of lithium (dendrites) across the solid state electrolyte layer leads to premature shorting of cells and limits their practical viability. The microscopic mechanisms that lead… ▽ More All solid state Li-ion batteries employing metallic lithium as an anode offer higher energy densities while also being safer than conventional liquid electrolyte based Li-ion batteries. However, the growth of tiny filaments of lithium (dendrites) across the solid state electrolyte layer leads to premature shorting of cells and limits their practical viability. The microscopic mechanisms that lead to lithium dendrite growth in solid state cells are still unclear. Using garnet based lithium ion conductor as a model solid state electrolyte, we show that interfacial void growth during lithium dissolution precedes dendrite nucleation and growth. Using a simple electrostatic model, we show that current density at the edges of the voids could be amplified by as much as four orders of magnitude making the cells highly susceptible to dendrite growth after void formation. We propose the use of metallic interlayers with low solubility and high nucleation overpotential for lithium to delay void growth. These interlayers increase dendrite growth tolerance in solid state electrolytes without the undue necessity for high stack pressures. △ Less

Submitted 17 January, 2020; originally announced January 2020.

Comments: 21 pages and 6 figures in the main manuscript. Supplementary Information of 36 pages contains sections S1.1 to S1.9, Figures S1-S25 and Tables S1 and S2

Atomically-Smooth Single-Crystalline VO$_2$ thin films with Bulk-like Metal-Insulator Transitions

Authors: Debasish Mondal, Smruti Rekha Mahapatra, Tanweer Ahmed, Suresh Kumar Podapangi, Arindam Ghosh, Naga Phani B. Aetukuri

Abstract: Atomically-abrupt interfaces in transition metal oxide (TMO) heterostructures could host a variety of exotic condensed matter phases that may not be found in the bulk materials at equilibrium. A critical step in the development of such atomically-sharp interfaces is the deposition of atomically-smooth TMO thin films. Optimized deposition conditions exist for the growth of perovskite oxides. Howeve… ▽ More Atomically-abrupt interfaces in transition metal oxide (TMO) heterostructures could host a variety of exotic condensed matter phases that may not be found in the bulk materials at equilibrium. A critical step in the development of such atomically-sharp interfaces is the deposition of atomically-smooth TMO thin films. Optimized deposition conditions exist for the growth of perovskite oxides. However, the deposition of rutile oxides, such as VO$_2$, with atomic-layer precision has been challenging. In this work, we used pulsed laser deposition (PLD) to grow atomically-smooth VO$_2$ thin films on rutile TiO$_2$ (101) substrates. We show that optimal substrate preparation procedure followed by the deposition of VO$_2$ films at a temperature conducive for step-flow growth mode is essential for achieving atomically-smooth VO$_2$ films. The films deposited at optimal substrate temperatures show a step and terrace structure of the underlying TiO$_2$ substrate. At lower deposition temperatures, there is a transition to a mixed growth mode comprising of island growth and layer-by-layer growth modes. VO$_2$ films deposited at optimal substrate temperatures undergo a metal to insulator transition at a transition temperature of $\sim$325 K with $\sim$10$^3$ times increase in resistance, akin to MIT in bulk VO$_2$. △ Less

Submitted 8 August, 2019; originally announced August 2019.

Comments: 5 pages, 4 figures, Supplementary Information with 2 pages and 1 Figure

Measurement of collective excitations in VO$_2$ by resonant inelastic X-ray scattering

Authors: Haowei He, A. X. Gray, P. Granitzka, J. W. Jeong, N. P. Aetukuri, R. Kukreja, Lin Miao, Y. B. Huang, P. Olalde-Velasco, J. Pelliciari, W. F. Schlotter, E. Arenholz, T. Schmitt, M. G. Samant, S. S. P. Parkin, H. A. Dürr, L. Andrew Wray

Abstract: Vanadium dioxide is of broad interest as a spin-1/2 electron system that realizes a metal-insulator transition near room temperature, due to a combination of strongly correlated and itinerant electron physics. Here, resonant inelastic X-ray scattering is used to measure the excitation spectrum of charge, spin, and lattice degrees of freedom at the vanadium L-edge under different polarization and t… ▽ More Vanadium dioxide is of broad interest as a spin-1/2 electron system that realizes a metal-insulator transition near room temperature, due to a combination of strongly correlated and itinerant electron physics. Here, resonant inelastic X-ray scattering is used to measure the excitation spectrum of charge, spin, and lattice degrees of freedom at the vanadium L-edge under different polarization and temperature conditions. These spectra reveal the evolution of energetics across the metal-insulator transition, including the low temperature appearance of a strong candidate for the singlet-triplet excitation of a vanadium dimer. △ Less

Submitted 3 March, 2016; originally announced March 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 94, 161119(R) (2016)

Ultrafast THz Field Control of Electronic and Structural Interactions in Vanadium Dioxide

Authors: A. X. Gray, M. C. Hoffmann, J. Jeong, N. P. Aetukuri, D. Zhu, H. Y. Hwang, N. C. Brandt, H. Wen, A. J. Sternbach, S. Bonetti, A. H. Reid, R. Kukreja, C. Graves, T. Wang, P. Granitzka, Z. Chen, D. J. Higley, T. Chase, E. Jal, E. Abreu, M. K. Liu, T. -C. Weng, D. Sokaras, D. Nordlund, M. Chollet , et al. (12 additional authors not shown)

Abstract: Vanadium dioxide, an archetypal correlated-electron material, undergoes an insulator-metal transition near room temperature that exhibits electron-correlation-driven and structurally-driven physics. Using ultrafast optical spectroscopy and x-ray scattering we show that these processes can be disentangled in the time domain. Specifically, following intense sub-picosecond electric-field excitation,… ▽ More Vanadium dioxide, an archetypal correlated-electron material, undergoes an insulator-metal transition near room temperature that exhibits electron-correlation-driven and structurally-driven physics. Using ultrafast optical spectroscopy and x-ray scattering we show that these processes can be disentangled in the time domain. Specifically, following intense sub-picosecond electric-field excitation, a partial collapse of the insulating gap occurs within the first ps. Subsequently, this electronic reconfiguration initiates a change in lattice symmetry taking place on a slower timescale. We identify the kinetic energy increase of electrons tunneling in the strong electric field as the driving force, illustrating a novel method to control electronic interactions in correlated materials on an ultrafast timescale. △ Less

Submitted 25 April, 2016; v1 submitted 27 January, 2016; originally announced January 2016.

Journal ref: Phys. Rev. B 98, 045104 (2018)

Correlation-driven insulator-metal transition in near-ideal vanadium dioxide films

Authors: A. X. Gray, J. Jeong, N. P. Aetukuri, P. Granitzka, Z. Chen, R. Kukreja, D. Higley, T. Chase, A. H. Reid, H. Ohldag, M. A. Marcus, A. Scholl, A. T. Young, A. Doran, C. A. Jenkins, P. Shafer, E. Arenholz, M. G. Samant, S. S. P. Parkin, H. A. Dürr

Abstract: We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline V… ▽ More We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO2 films are preceded by the purely-electronic softening of Coulomb correlations within V-V singlet dimers. This process starts 7 K (+/- 0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-room-temperature insulator-metal transition in this technologically-promising material. △ Less

Submitted 26 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. Lett. 116, 116403 (2016)