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Optical fibre-based (plug-and-play) single photon source using InAsP quantum dot nanowires and gradient-index lens collection
Authors:
David B. Northeast,
John F. Weber,
Dan Dalacu,
Jason Phoenix,
Philip J. Poole,
Geof Aers,
Jean Lapointe,
Robin L. Williams
Abstract:
We present a compact, fibre-coupled single photon source using gradient-index (GRIN) lenses and an InAsP semiconductor quantum dot embedded within an InP photonic nanowire waveguide. A GRIN lens assembly is used to collect photons close to the tip of the nanowire, coupling the light immediately into a single mode optical fibre. The system provides a stable, high brightness source of fibre-coupled…
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We present a compact, fibre-coupled single photon source using gradient-index (GRIN) lenses and an InAsP semiconductor quantum dot embedded within an InP photonic nanowire waveguide. A GRIN lens assembly is used to collect photons close to the tip of the nanowire, coupling the light immediately into a single mode optical fibre. The system provides a stable, high brightness source of fibre-coupled single photons. Using pulsed excitation, we demonstrate on-demand operation with a single photon purity of 98.5% when exciting at saturation in a device with a source-fibre collection efficiency of 35% and an overall single photon collection efficiency of 10%. We also demonstrate "plug and play" operation using room temperature photoluminescence from the InP nanowire for room temperature alignment.
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Submitted 22 April, 2021;
originally announced April 2021.
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Monolithic integration of single photon sources via evanescent coupling of tapered InP nanowires to SiN waveguides
Authors:
Khaled Mnaymneh,
Dan Dalacu,
Joseph McKee,
Jean Lapointe,
Sofiane Haffouz,
Philip J. Poole,
Geof C. Aers,
Robin L. Williams
Abstract:
We demonstrate a method to monolithically integrate nanowire-based quantum dot single photon sources on-chip using evanescent coupling. By deterministically placing an appropriately tapered III-V nanowire waveguide, containing a single quantum dot, on top of a silicon-based ridge waveguide, the quantum dot emission can be transferred to the ridge waveguide with calculated efficiencies close to 100…
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We demonstrate a method to monolithically integrate nanowire-based quantum dot single photon sources on-chip using evanescent coupling. By deterministically placing an appropriately tapered III-V nanowire waveguide, containing a single quantum dot, on top of a silicon-based ridge waveguide, the quantum dot emission can be transferred to the ridge waveguide with calculated efficiencies close to 100%. As the evanescent coupling is bidirectional, the source can be optically pumped in both free-space and through the ridge waveguide. The latter onfiguration provides a self-contained, all-fiber, single photon source suitable as a plug-and-play solution for applications requiring bright, on-demand single photons. Using InAsP quantum dots embedded in InP nanowire waveguides, we demonstrate coupling efficiencies to a SiN ridge waveguide of 74% with a single photon purity of 97%.
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Submitted 8 December, 2018;
originally announced January 2019.
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In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing
Authors:
Alexis Fiset-Cyr,
Dan Dalacu,
Sofiane Haffouz,
Philip J. Poole,
Jean Lapointe,
Geof C. Aers,
Robin L. William
Abstract:
We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the deterministic tuning of individual emitters. A tuning range of up to 15 meV is obtained with a precision limited by the laser exposure time. A distinct satu…
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We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the deterministic tuning of individual emitters. A tuning range of up to 15 meV is obtained with a precision limited by the laser exposure time. A distinct saturation of the energy shift is observed, which suggests an intermixing mechanism relying on grown-in defects that are subsequently removed from the semiconductor material during annealing. The ability to tune different emitters into resonance with each other will be required for fabricating remote quantum dot-based sources of indistinguishable photons for secure quantum networks.
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Submitted 8 April, 2018;
originally announced April 2018.
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The visibility study of S-T$_+$ Landau-Zener-Stückelberg oscillations without applied initialization
Authors:
G. Granger,
G. C. Aers,
S. A. Studenikin,
A. Kam,
P. Zawadzki,
Z. R. Wasilewski,
A. S. Sachrajda
Abstract:
Probabilities deduced from quantum information studies are usually based on averaging many identical experiments separated by an initialization step. Such initialization steps become experimentally more challenging to implement as the complexity of quantum circuits increases. To better understand the consequences of imperfect initialization on the deduced probabilities, we study the effect of not…
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Probabilities deduced from quantum information studies are usually based on averaging many identical experiments separated by an initialization step. Such initialization steps become experimentally more challenging to implement as the complexity of quantum circuits increases. To better understand the consequences of imperfect initialization on the deduced probabilities, we study the effect of not initializing the system between measurements. For this we utilize Landau-Zener-Stückelberg oscillations in a double quantum dot circuit. Experimental results are successfully compared to theoretical simulations.
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Submitted 11 January, 2015; v1 submitted 14 April, 2014;
originally announced April 2014.
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Enhanced charge detection of spin qubit readout via an intermediate state
Authors:
S. A. Studenikin,
J. Thorgrimson,
G. C. Aers,
A. Kam,
P. Zawadzki,
Z. R. Wasilewski,
A. Bogan,
A. S. Sachrajda
Abstract:
We employ an intermediate excited charge state of a lateral quantum dot device to increase the charge detection contrast during the qubit state readout procedure, allowing us to increase the visibility of coherent qubit oscillations. This approach amplifies the coherent oscillation magnitude but has no effect on the detector noise resulting in an increase in the signal to noise ratio. In this lett…
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We employ an intermediate excited charge state of a lateral quantum dot device to increase the charge detection contrast during the qubit state readout procedure, allowing us to increase the visibility of coherent qubit oscillations. This approach amplifies the coherent oscillation magnitude but has no effect on the detector noise resulting in an increase in the signal to noise ratio. In this letter we apply this scheme to demonstrate a significant enhancement of the fringe contrast of coherent Landau-Zener-Stuckleberg oscillations between singlet S and triplet T+ two-spin states.
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Submitted 4 June, 2012;
originally announced June 2012.
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A phonon scattering assisted injection and extraction based terahertz quantum cascade laser
Authors:
E. Dupont,
S. Fathololoumi,
Z. R. Wasilewski,
G. Aers,
S. R. Laframboise,
M. Lindskog,
A. Wacker,
D. Ban,
H. C. Liu
Abstract:
A novel lasing scheme for terahertz quantum cascade lasers, based on consecutive phonon-photon-phonon emissions per module, is proposed and experimentally demonstrated. The charge transport of the proposed structure is modeled using a rate equation formalism. An optimization code based on a genetic algorithm was developed to find a four-well design in the $\mathrm{GaAs/Al_{0.25}Ga_{0.75}As}$ mater…
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A novel lasing scheme for terahertz quantum cascade lasers, based on consecutive phonon-photon-phonon emissions per module, is proposed and experimentally demonstrated. The charge transport of the proposed structure is modeled using a rate equation formalism. An optimization code based on a genetic algorithm was developed to find a four-well design in the $\mathrm{GaAs/Al_{0.25}Ga_{0.75}As}$ material system that maximizes the product of population inversion and oscillator strength at 150 K. The fabricated devices using Au double-metal waveguides show lasing at 3.2 THz up to 138 K. The electrical characteristics display no sign of differential resistance drop at lasing threshold, which suggests - thanks to the rate equation model - a slow depopulation rate of the lower lasing state, a hypothesis confirmed by non-equilibrium Green's function calculations.
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Submitted 19 January, 2012;
originally announced January 2012.
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Quantum interference between three two-spin states in a double quantum dot
Authors:
S. A. Studenikin,
G. C. Aers,
G. Granger,
L. Gaudreau,
A. Kam,
P. Zawadzki,
Z. R. Wasilewski,
A. S. Sachrajda
Abstract:
Qubits based on the singlet (S) and the triplet (T0, T+) states in double quantum dots have been demonstrated in separate experiments. It has been recently proposed theoretically that under certain conditions a quantum interference could occur from the interplay between these two qubit species. Here we report experiments and modeling which confirm these theoretical predictions and identify the con…
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Qubits based on the singlet (S) and the triplet (T0, T+) states in double quantum dots have been demonstrated in separate experiments. It has been recently proposed theoretically that under certain conditions a quantum interference could occur from the interplay between these two qubit species. Here we report experiments and modeling which confirm these theoretical predictions and identify the conditions under which this interference occurs. Density matrix calculations show that the interference pattern manifests primarily via the occupation of the common singlet state. The S/T0 qubit is found to have a much longer coherence time as compared to the S/T+ qubit.
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Submitted 18 January, 2012;
originally announced January 2012.
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Coherent control of three-spin states in a triple quantum dot
Authors:
L. Gaudreau,
G. Granger,
A. Kam,
G. C. Aers,
S. A. Studenikin,
P. Zawadzki,
M. Pioro-Ladrière,
Z. R. Wasilewski,
A. S. Sachrajda
Abstract:
Spin qubits involving individual spins in single quantum dots or coupled spins in double quantum dots have emerged as potential building blocks for quantum information processing applications. It has been suggested that triple quantum dots may provide additional tools and functionalities. These include the encoding of information to either obtain protection from decoherence or to permit all-electr…
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Spin qubits involving individual spins in single quantum dots or coupled spins in double quantum dots have emerged as potential building blocks for quantum information processing applications. It has been suggested that triple quantum dots may provide additional tools and functionalities. These include the encoding of information to either obtain protection from decoherence or to permit all-electrical operation, efficient spin busing across a quantum circuit, and to enable quantum error correction utilizing the three-spin Greenberger-Horn-Zeilinger quantum state. Towards these goals we demonstrate for the first time coherent manipulation between two interacting three-spin states. We employ the Landau-Zener-Stückelberg approach for creating and manipulating coherent superpositions of quantum states. We confirm that we are able to maintain coherence when decreasing the exchange coupling of one spin with another while simultaneously increasing its coupling with the third. Such control of pairwise exchange is a requirement of most spin qubit architectures but has not been previously demonstrated.
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Submitted 22 February, 2013; v1 submitted 17 June, 2011;
originally announced June 2011.
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Influence of electron-acoustic phonon scattering on off-resonant cavity feeding within a strongly coupled quantum-dot cavity system
Authors:
S. Hughes,
P. Yao,
F. Milde,
A. Knorr,
D. Dalacu,
K. Mnaymneh,
V. Sazonova,
P. J. Poole,
G. C. Aers,
J. Lapointe,
R. Cheriton,
R. L. Williams
Abstract:
We present a medium-dependent quantum optics approach to describe the influence of electron-acoustic phonon coupling on the emission spectra of a strongly coupled quantum-dot cavity system. Using a canonical Hamiltonian for light quantization and a photon Green function formalism, phonons are included to all orders through the dot polarizability function obtained within the independent Boson model…
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We present a medium-dependent quantum optics approach to describe the influence of electron-acoustic phonon coupling on the emission spectra of a strongly coupled quantum-dot cavity system. Using a canonical Hamiltonian for light quantization and a photon Green function formalism, phonons are included to all orders through the dot polarizability function obtained within the independent Boson model. We derive simple user-friendly analytical expressions for the linear quantum light spectrum, including the influence from both exciton and cavity-emission decay channels. In the regime of semiconductor cavity-QED, we study cavity emission for various exciton-cavity detunings and demonstrate rich spectral asymmetries as well as cavity-mode suppression and enhancement effects. Our technique is nonperturbative, and non-Markovian, and can be applied to study photon emission from a wide range of semiconductor quantum dot structures, including waveguides and coupled cavity arrays. We compare our theory directly to recent and apparently puzzling experimental data for a single site-controlled quantum dot in a photonic crystal cavity and show good agreement as a function of cavity-dot detuning and as a function of temperature.
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Submitted 3 February, 2011;
originally announced February 2011.
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Electron transport in gated InGaAs and InAsP quantum well wires in selectively-grown InP ridge structures
Authors:
G. Granger,
A. Kam,
S. A. Studenikin,
A. S. Sachrajda,
G. C. Aers,
R. L. Williams,
P. J. Poole
Abstract:
The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact r…
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The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact resistance, the electron density, and the mobility as a function of the wire width using standard transport and Shubnikov-de Haas measurements. At low temperatures the ridge structures reveal reproducible mesoscopic conductance fluctuations. We also fabricate ridge structures with submicron gate electrodes that exhibit non-leaky gating and good pinch-off characteristics acceptable for device operation. Using such wrap gate electrodes, we demonstrate that the wires can be split to form quantum dots evidenced by Coulomb blockade oscillations in transport measurements.
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Submitted 11 November, 2009; v1 submitted 31 August, 2009;
originally announced August 2009.
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Gate Adjustable Coherent Three and Four Level Mixing in a Vertical Quantum Dot Molecule
Authors:
C. Payette,
S. Amaha,
T. Hatano,
K. Ono,
J. A. Gupta,
G. C. Aers,
D. G. Austing,
S. V. Nair,
S. Tarucha
Abstract:
We study level mixing in the single particle energy spectrum of one of the constituent quantum dots in a vertical double quantum dot by performing magneto-resonant-tunneling spectroscopy. The device used in this study differs from previous vertical double quantum dot devices in that the single side gate is now split into four separate gates. Because of the presence of natural perturbations cause…
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We study level mixing in the single particle energy spectrum of one of the constituent quantum dots in a vertical double quantum dot by performing magneto-resonant-tunneling spectroscopy. The device used in this study differs from previous vertical double quantum dot devices in that the single side gate is now split into four separate gates. Because of the presence of natural perturbations caused by anharmonicity and anistrophy, applying different combinations of voltages to these gates allows us to alter the effective potential landscape of the two dots and hence influence the level mixing. We present here preliminary results from one three level crossing and one four level crossings high up in the energy spectrum of one of the probed quantum dots, and demonstrate that we are able to change significantly the energy dispersions with magnetic field in the vicinity of the crossing regions.
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Submitted 31 August, 2009;
originally announced August 2009.
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Tuning the exciton g-factor in single InAs/InP quantum dots
Authors:
D. Kim,
W. Sheng,
P. J. Poole,
D. Dalacu,
J. Lefebvre,
J. Lapointe,
M. E. Reimer,
G. C. Aers,
R. L. Williams
Abstract:
Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight bind…
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Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight binding calculations, which show that the hole g-factor is sensitive to confinement effects through orbital angular momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton g-factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates.
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Submitted 10 December, 2008; v1 submitted 16 September, 2008;
originally announced September 2008.
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Voltage Induced Hidden Symmetry and Photon Entanglement Generation in a Single, Site-Selected Quantum Dot
Authors:
Michael E. Reimer,
Marek Korkusinski,
Jacques Lefebvre,
Jean Lapointe,
Philip J. Poole,
Geof C. Aers,
Dan Dalacu,
W. Ross McKinnon,
Simon Frederick,
Pawel Hawrylak,
Robin L. Williams
Abstract:
Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We show how this requirement is lifted if the biexciton binding energy can be tuned to zero and we demonstrate this unbinding of the biexciton in a single, pre-…
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Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We show how this requirement is lifted if the biexciton binding energy can be tuned to zero and we demonstrate this unbinding of the biexciton in a single, pre-positioned InAs quantum dot subject to a lateral electric field. Full Configuration-Interaction calculations are presented that reveal how the biexciton is unbound through manipulation of the electron-hole Coulomb interaction and the consequent introduction of Hidden Symmetry.
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Submitted 7 June, 2007;
originally announced June 2007.
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Second-Order Nonlinear Mixing of Two Modes in a Planar Photonic Crystal Microcavity
Authors:
Murray W. McCutcheon,
Jeff F. Young,
Georg W. Rieger,
Dan Dalacu,
Simon Frederick,
Philip J. Poole,
Geof C. Aers,
Robin L. Williams
Abstract:
Polarization-resolved second-harmonic spectra are obtained from the resonant modes of a two-dimensional planar photonic crystal microcavity patterned in a free-standing InP slab. The photonic crystal microcavity is comprised of a single missing-hole defect in a hexagonal photonic crystal host formed with elliptically-shaped holes. The cavity supports two orthogonally-polarized resonant modes spl…
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Polarization-resolved second-harmonic spectra are obtained from the resonant modes of a two-dimensional planar photonic crystal microcavity patterned in a free-standing InP slab. The photonic crystal microcavity is comprised of a single missing-hole defect in a hexagonal photonic crystal host formed with elliptically-shaped holes. The cavity supports two orthogonally-polarized resonant modes split by 60 wavenumbers. Sum-frequency data are reported from the nonlinear interaction of the two coherently excited modes, and the polarization dependence is explained in terms of the nonlinear susceptibility tensor of the host InP.
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Submitted 5 January, 2006; v1 submitted 4 January, 2006;
originally announced January 2006.
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Self-Assembled InAs Quantum Dots on Patterned InP Substrates
Authors:
J. Lefebvre,
P. J. Poole,
J. Fraser,
G. C. Aers,
D. Chithrani,
R. L. Williams
Abstract:
The size distribution of self-assembled InAs quantum dots grown on (001) InP under the Stranski-Krastanow growth mode is controlled using selective area/chemical beam epitaxy, which allows the formation of quantum dots at specific locations. As the dimensions of the patterned areas are decreased from 1000 nm down to 50 nm or less, scanning electron microscopy reveals a gradual increase in the sp…
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The size distribution of self-assembled InAs quantum dots grown on (001) InP under the Stranski-Krastanow growth mode is controlled using selective area/chemical beam epitaxy, which allows the formation of quantum dots at specific locations. As the dimensions of the patterned areas are decreased from 1000 nm down to 50 nm or less, scanning electron microscopy reveals a gradual increase in the spatial correlation between quantum dots, which leads to the formation of ordered arrays for dimensions below 200 nm.
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Submitted 22 December, 2000;
originally announced December 2000.
