Thermal boundary conductance of metal diamond interfaces predicted by machine learning interatomic potentials
Authors:
Khalid Zobaid Adnan,
Mahesh R. Neupane,
Tianli Feng
Abstract:
Thermal boundary conductance (TBC) across metal diamond interfaces plays a critical role in the thermal management of future diamond based ultrawide bandgap semiconductor devices. Molecular dynamics is a sophisticated method to predict TBC but is limited by the lack of reliable potential describing metal diamond interfaces. In this work, we report the development of machine learning interatomic po…
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Thermal boundary conductance (TBC) across metal diamond interfaces plays a critical role in the thermal management of future diamond based ultrawide bandgap semiconductor devices. Molecular dynamics is a sophisticated method to predict TBC but is limited by the lack of reliable potential describing metal diamond interfaces. In this work, we report the development of machine learning interatomic potentials and the prediction of TBCs of several technologically promising metal diamond interfaces using nonequilibrium molecular dynamics. The predicted TBCs of Al, Zr, Mo, and Au-diamond interfaces are approximately 316, 88, 52, and 55 MW/m2K, respectively, after quantum corrections. The corresponding thermal boundary resistances are equivalent to 0.8 μm thick of Al, 1.4 μm Mo, 0.3 μm Zr, and 5.3 μm Au, respectively. We also find that the conventional simple models, such as the acoustic mismatch model and diffuse mismatch model, even including the full-band phonon dispersion from first principles, largely misestimate the TBC values because of their inability to include inelastic transmission as well as interfacial structural and bonding details. The quantum-corrected TBC values for the metal diamond interfaces correlate well with the quantum corrected phonon specific heat of metals, instead of diamond. Additionally, our comparative analysis of Debye temperature and elastic modulus in these systems reveals that the former parameter correlates more strongly with the TBC than the latter. These low TBC values need to be considered in future diamond based semiconductor devices.
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Submitted 22 May, 2024; v1 submitted 23 April, 2024;
originally announced April 2024.
Thermal boundary conductance and thermal conductivity strongly depend on nearby environment
Authors:
Khalid Zobaid Adnan,
Tianli Feng
Abstract:
At the nanoscale, the thermal boundary conductance (TBC) and thermal conductivity are not intrinsic properties of interfaces or materials but depend on the nearby environment. However, most studies focused on single interfaces or superlattices, and the thermal transport across heterostructures formed by multiple different materials is still mysterious. In this study, we demonstrate how much the TB…
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At the nanoscale, the thermal boundary conductance (TBC) and thermal conductivity are not intrinsic properties of interfaces or materials but depend on the nearby environment. However, most studies focused on single interfaces or superlattices, and the thermal transport across heterostructures formed by multiple different materials is still mysterious. In this study, we demonstrate how much the TBC of an interface is affected by the existence of a second interface, as well as how much the thermal conductivity of a material is affected by the nearby materials. Using Si and Ge modeled by classical molecular dynamics simulations, the following phenomena are demonstrated. (1) The existence of a nearby interface can significantly change the TBC of the original interface. For example, by adding an interface after Si/Ge, the TBC can be increased from 400 to 700 MW/m2K. This is because the nearby interface serves as a filter of phonon modes, which selectively allows particular modes to pass through and affect the TBC of the original interfaces. This impact will disappear at the diffusive limit when the distance between interfaces is much longer than the phonon mean free path so that phonon modes recover equilibrium statistics before arriving at the second interface. (2) The thermal conductivity of a material can be significantly changed by the existence of neighboring materials. For example, a standalone 30-nm-thick Si's thermal conductivity can be increased from 50 to 280 W/mK, a more than 4-fold increase, beating the bulk thermal conductivity of Si, after being sandwiched between two Ge slabs. This is because the Ge slabs on the two sides serve as filters that only allow low-frequency phonons to transport heat in Si, which carry more heat than optical phonons. This work opens a new area of successive interface thermal transport and is expected to be important for nanoscale thermal characterization and thermal management of semiconductor devices.
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Submitted 7 May, 2024; v1 submitted 23 April, 2024;
originally announced April 2024.
