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Inducing a Tunable Skyrmion-Antiskyrmion System through Ion Beam Modification of FeGe Films
Authors:
M. B. Venuti,
Xiyue S. Zhang,
Eric J Lang,
Sadhvikas J. Addamane,
Hanjong Paik,
Portia Allen,
Peter Sharma,
David Muller,
Khalid Hattar,
Tzu-Ming Lu,
Serena Eley
Abstract:
Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic non-centrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we mu…
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Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic non-centrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals -- determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au$^{4+}$ ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and anitskyrmions as storage bits and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals.
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Submitted 14 April, 2024; v1 submitted 21 November, 2023;
originally announced November 2023.
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Nonreciprocal Coulomb Drag between Quantum Wires in the quasi-1D regime
Authors:
R. Makaju,
H. Kassar,
S. M. Daloglu,
A. Huynh,
A. Levchenko,
S. J. Addamane,
D. Laroche
Abstract:
Coulomb drag experiments have been an essential tool to study strongly interacting low-dimensional systems. Historically, this effect has been explained in terms of momentum transfer between electrons in the active and the passive layer. Here, we report Coulomb drag measurements between laterally coupled GaAs/AlGaAs quantum wires in the multiple 1D sub-band regime that break Onsager's reciprocity…
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Coulomb drag experiments have been an essential tool to study strongly interacting low-dimensional systems. Historically, this effect has been explained in terms of momentum transfer between electrons in the active and the passive layer. Here, we report Coulomb drag measurements between laterally coupled GaAs/AlGaAs quantum wires in the multiple 1D sub-band regime that break Onsager's reciprocity upon both layer and current direction reversal, in contrast to prior 1D Coulomb drag results. The drag signal shows nonlinear I-V characteristics, which are well characterized by a third-order polynomial fit. These findings are qualitatively consistent with a rectified drag signal induced by charge fluctuations. However, the nonmonotonic temperature dependence of this drag signal suggests that strong electron-electron interactions, expected within the Tomonaga-Luttinger liquid framework, remain important and standard interaction models are insufficient to capture the qualitative nature of rectified 1D Coulomb drag.
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Submitted 17 January, 2024; v1 submitted 20 October, 2023;
originally announced October 2023.
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Frequency combs in optically-injected terahertz ring quantum cascade lasers
Authors:
Md Istiak Khan,
Zhenyang Xiao,
Sadhvikas J. Addamane,
David Burghoff
Abstract:
Quantum cascade lasers (QCLs) have emerged as promising candidates for generating chip-scale frequency combs in mid-infrared and terahertz wavelengths. In this work, we demonstrate frequency comb formation in ring terahertz QCLs using the injection of light from a distributed feedback (DFB) laser. The DFB design frequency is chosen to match the modes of the ring cavity (near 3.3 THz), and light fr…
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Quantum cascade lasers (QCLs) have emerged as promising candidates for generating chip-scale frequency combs in mid-infrared and terahertz wavelengths. In this work, we demonstrate frequency comb formation in ring terahertz QCLs using the injection of light from a distributed feedback (DFB) laser. The DFB design frequency is chosen to match the modes of the ring cavity (near 3.3 THz), and light from the DFB is injected into the ring QCL via a bus waveguide. By controlling the power and frequency of the optical injection, we show experimentally and theoretically that combs can be selectively formed and controlled in the ring cavity. The potential for soliton generation and efficient power extraction through the bus waveguide presents exciting opportunities for integrating this technology in compact comb designs.
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Submitted 26 August, 2023; v1 submitted 22 August, 2023;
originally announced August 2023.
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Terahertz semiconductor laser source at -12 C
Authors:
Ali Khalatpour,
Man Chun Tam,
Sadhvikas J. Addamane,
John Reno,
Zbig Wasilewski,
Qing Hu
Abstract:
Room temperature operation of Terahertz Quantum Cascade Lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. The progress toward high-temperature operation in THz QCLs has been relatively slow compared to infrared QCLs owing to more significant challenges at THz frequencies. Recently, the maximum operating temperature of THz QCLs was improved to 250 K, and t…
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Room temperature operation of Terahertz Quantum Cascade Lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. The progress toward high-temperature operation in THz QCLs has been relatively slow compared to infrared QCLs owing to more significant challenges at THz frequencies. Recently, the maximum operating temperature of THz QCLs was improved to 250 K, and the achievement revitalized hope in the THz community in pursuit of higher temperature operations. In this paper, we report on further improvement in operating temperature to ~261 K (-12 0C) by judiciously optimizing key parameters and discuss the challenges ahead in achieving room temperature operation.
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Submitted 15 November, 2022;
originally announced November 2022.
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Terahertz pulse generation with binary phase control in non-linear InAs metasurface
Authors:
Hyunseung Jung,
Lucy L. Hale,
Sylvain D. Gennaro,
Jayson Briscoe,
Prasad P. Iyer,
Chloe F. Doiron,
C. Thomas Harris,
Ting Shan Luk,
Sadhvikas J Addamane,
John L. Reno,
Igal Brener,
Oleg Mitrofanov
Abstract:
The effect of terahertz (THz) pulse generation has revolutionized broadband coherent spectroscopy and imaging at THz frequencies. However, THz pulses typically lack spatial structure, whereas structured beams are becoming essential for advanced spectroscopy applications. Non-linear optical metasurfaces with nanoscale THz emitters can provide a solution by defining the beam structure at the generat…
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The effect of terahertz (THz) pulse generation has revolutionized broadband coherent spectroscopy and imaging at THz frequencies. However, THz pulses typically lack spatial structure, whereas structured beams are becoming essential for advanced spectroscopy applications. Non-linear optical metasurfaces with nanoscale THz emitters can provide a solution by defining the beam structure at the generation stage. We develop a non-linear InAs metasurface consisting of nanoscale optical resonators for simultaneous generation and structuring of THz beams. We find that THz pulse generation in the resonators is governed by optical rectification. It is more efficient than in ZnTe crystals, and it allows us to control the pulse polarity and amplitude, offering a platform for realizing binary-phase THz metasurfaces. To illustrate this capability, we demonstrate an InAs metalens, which simultaneously generates and focuses THz pulses. The control of spatiotemporal structure using nanoscale emitters opens doors for THz beam engineering and advanced spectroscopy and imaging applications.
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Submitted 7 November, 2022;
originally announced November 2022.
