Showing 1–18 of 18 results for author: Adamo, C

Possible Unconventional Surface Superconductivity in the Half-Heusler YPtBi

Authors: Eylon Persky, Alan Fang, Xinyang Zhang, Carolina Adamo, Eli Levenson-Falk, Chandra Shekhar, Claudia Felser, Binghai Yan, Aharon Kapitulnik

Abstract: We report an extensive extensive study of the noncentrosymmetric half-Heusler topological superconductor YPtBi, revealing unusual relation between bulk superconductivity and the appearance of surface superconductivity at temperatures up to 3 times the bulk transition temperature. Transport measurements confirmed the low carrier density of the material and its bulk superconducting transition, which… ▽ More We report an extensive extensive study of the noncentrosymmetric half-Heusler topological superconductor YPtBi, revealing unusual relation between bulk superconductivity and the appearance of surface superconductivity at temperatures up to 3 times the bulk transition temperature. Transport measurements confirmed the low carrier density of the material and its bulk superconducting transition, which was also observed in ac susceptibility through mutual inductance (MI) measurements. However, a weak signature of superconductivity in the MI measurements appeared much above the bulk transition temperature, which was further observed in scanning tunneling spectroscopy. Polar Kerr effect measurements suggest that while the bulk superconductor may exhibit an unusual nodal superconducting state, only the surface state breaks time reversal symmetry. Complementary tunneling measurements on LuPtBi are used to establish the observations on YPtBi, while density-functional theory (DFT) calculations may shed light on the origin of this unusual surface state. △ Less

Submitted 28 December, 2023; originally announced December 2023.

Comments: 11 pages, 10 figures

Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction

Authors: Jie Zhou, Moheb Sheikhi, Ashok Dheenan, Haris Abbasi, Jiarui Gong, Yang Liu, Carolina Adamo, Patrick Marshall, Nathan Wriedt, Clincy Cheung, Shuoyang Qiu, Tien Khee Ng, Qiaoqiang Gan, Vincent Gambin, Boon S. Ooi, Siddharth Rajan, Zhenqiang Ma

Abstract: In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarka… ▽ More In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$Ω\cdot$cm$^2$. △ Less

Submitted 5 October, 2023; originally announced October 2023.

Comments: 14 pages, 5 figures

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Authors: Jie Zhou, Ashok Dheenan, Jiarui Gong, Carolina Adamo, Patrick Marshall, Moheb Sheikhi, Tsung-Han Tsai, Nathan Wriedt, Clincy Cheung, Shuoyang Qiu, Tien Khee Ng, Qiaoqiang Gan, Gambin Vincent, Boon S. Ooi, Siddharth Rajan, Zhenqiang Ma

Abstract: Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer pr… ▽ More Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga$_2$O$_3$ epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V. △ Less

Submitted 14 August, 2023; v1 submitted 12 August, 2023; originally announced August 2023.

Comments: 12 pages, 4 figures

Sub-THz momentum drag and violation of Matthiessen's rule in an ultraclean ferromagnetic SrRuO$_3$ metallic thin film

Authors: Youcheng Wang, G. Bosse, H. P. Nair, N. J. Schreiber, J. P. Ruf, B. Cheng, C. Adamo, D. E. Shai, Y. Lubashevsky, D. G. Schlom, K. M. Shen, N. P. Armitage

Abstract: SrRuO$_3$, a ferromagnet with an approximately 160\,K Curie temperature, exhibits a $T^2$ dependent dc resistivity below $\approx$ 30 K. Nevertheless, previous optical studies in the infrared and terahertz range show non-Drude dynamics at low temperatures which seem to contradict a Fermi-liquid picture with long-lived quasiparticles. In this work, we measure the low-frequency THz range response of… ▽ More SrRuO$_3$, a ferromagnet with an approximately 160\,K Curie temperature, exhibits a $T^2$ dependent dc resistivity below $\approx$ 30 K. Nevertheless, previous optical studies in the infrared and terahertz range show non-Drude dynamics at low temperatures which seem to contradict a Fermi-liquid picture with long-lived quasiparticles. In this work, we measure the low-frequency THz range response of thin films with residual resistivity ratios, $ρ_{300K}/ ρ_{4K} \approx$ 74. Such low disorder samples allow an unprecedented look at the effects of electron-electron interactions on low-frequency transport. At temperatures below 30 K, we found both a very sharp zero-frequency mode which has a width narrower than $k_BT/\hbar$ as well as a broader zero frequency Lorentzian that has at least an order of magnitude larger scattering rate. Both features have temperature dependencies consistent with a Fermi-liquid with the wider feature explicitly showing a T$^2$ scaling. Such two -Drude transport sheds light on previous reports of the violation of Mathielssen's rule and extreme sensitivity to disorder in metallic ruthenates. We consider a number of possibilities for the origin of the two feature optical conductivity including multiband effects that arise from momentum conserving interband scattering and the approximate conservation of a pseudo-momentum that arises from quasi-1D Fermi surfaces. △ Less

Submitted 26 March, 2020; originally announced March 2020.

Comments: main text 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 125, 217401 (2020)

Non-thermal fluence threshold for femtosecond pulsed x-ray radiation damage in perovskite complex oxide epitaxial heterostructures

Authors: Hyeon Jun Lee, Youngjun Ahn, Samuel D. Marks, Eric C. Landahl, Jun Young Lee, Tae Yeon Kim, Sanjith Unithrattil, Ji Young Jo, Sae Hwan Chun, Sunam Kim, Sang-Yeon Park, Intae Eom, Carolina Adamo, Darrell G. Schlom, Haidan Wen, Paul G. Evans

Abstract: Intense hard x-ray pulses from a free-electron laser induce irreversible structural damage in a perovskite oxide epitaxial heterostructure when pulse fluences exceed a threshold value. The intensity of x-ray diffraction from a 25-nm thick epitaxial BiFeO$_{3}$ layer on a SrTiO$_{3}$ substrate measured using a series of pulses decreases abruptly with a per-pulse fluence of 2.7 x 10$^{6}$ photons… ▽ More Intense hard x-ray pulses from a free-electron laser induce irreversible structural damage in a perovskite oxide epitaxial heterostructure when pulse fluences exceed a threshold value. The intensity of x-ray diffraction from a 25-nm thick epitaxial BiFeO$_{3}$ layer on a SrTiO$_{3}$ substrate measured using a series of pulses decreases abruptly with a per-pulse fluence of 2.7 x 10$^{6}$ photons $μ$m$^{-2}$ at 9.7 keV photon energy, but remains constant for 1.3 x 10$^{6}$ photons $μ$m$^{-2}$ or less. The damage resulted in the destruction of the BiFeO$_{3}$ thin film within the focal spot area and the formation of a deep cavity penetrating into the STO substrate via the removal of tens of nanometers of material per pulse. The damage threshold occurs at a fluence that is insufficient to heat the absorption volume to the melting point. The morphology of the ablated sample is consistent with fracture rather than melting. Together these results indicate that the damage occurs via a non-thermal process consistent with ultrafast ionization of the absorption volume. △ Less

Submitted 10 December, 2019; v1 submitted 6 December, 2019; originally announced December 2019.

Comments: The following article has been accepted by Applied Physics Letters

Strain-Engineering Mott-Insulating La$_2$CuO$_4$

Authors: O. Ivashko, M. Horio, W. Wan, N. B. Christensen, D. E. McNally, E. Paris, Y. Tseng, N. E. Shaik, H. M. Rønnow, H. I. Wei, C. Adamo, C. Lichtensteiger, M. Gibert, M. R. Beasley, K. M. Shen, J. M. Tomczak, T. Schmitt, J. Chang

Abstract: The transition temperature $T_\textrm{c}$ of unconventional superconductivity is often tunable. For a monolayer of FeSe, for example, the sweet spot is uniquely bound to titanium-oxide substrates. By contrast for La$_{2-\mathrm{x}}$Sr$_\mathrm{x}$CuO$_4$ thin films, such substrates are sub-optimal and the highest $T_\textrm{c}$ is instead obtained using LaSrAlO$_4$. An outstanding challenge is thu… ▽ More The transition temperature $T_\textrm{c}$ of unconventional superconductivity is often tunable. For a monolayer of FeSe, for example, the sweet spot is uniquely bound to titanium-oxide substrates. By contrast for La$_{2-\mathrm{x}}$Sr$_\mathrm{x}$CuO$_4$ thin films, such substrates are sub-optimal and the highest $T_\textrm{c}$ is instead obtained using LaSrAlO$_4$. An outstanding challenge is thus to understand the optimal conditions for superconductivity in thin films: which microscopic parameters drive the change in $T_\mathrm{c}$ and how can we tune them? Here we demonstrate, by a combination of x-ray absorption and resonant inelastic x-ray scattering spectroscopy, how the Coulomb and magnetic-exchange interaction of La$_2$CuO$_4$ thin films can be enhanced by compressive strain. Our experiments and theoretical calculations establish that the substrate producing the largest $T_\textrm{c}$ under do** also generates the largest nearest neighbour hop** integral, Coulomb and magnetic-exchange interaction. We hence suggest optimising the parent Mott state as a strategy for enhancing the superconducting transition temperature in cuprates. △ Less

Submitted 5 March, 2019; v1 submitted 18 May, 2018; originally announced May 2018.

Comments: 15 pages, 7 figures and 2 tables (including Supplementary Information)

Journal ref: Nature Communications 10, 786 (2019)

Spatially modulated susceptibility in thin film La$_{2-x}$Ba$_x$CuO$_4$

Authors: Samantha I. Davis, Rahim R. Ullah, Carolina Adamo, Christopher A. Watson, John R. Kirtley, Malcolm R. Beasley, Steven A. Kivelson, Kathryn A. Moler

Abstract: The high critical temperature superconductor Lanthanum Barium Copper Oxide (La2-xBaxCuO4 or LBCO) exhibits a strong anomaly in critical temperature at 1/8th do**, nematicity, and other interesting properties. We report here Scanning Superconducting Quantum Interference Device (SQUID) imaging of the magnetic fields and susceptibility in a number of thin film LBCO samples with do** in the vicini… ▽ More The high critical temperature superconductor Lanthanum Barium Copper Oxide (La2-xBaxCuO4 or LBCO) exhibits a strong anomaly in critical temperature at 1/8th do**, nematicity, and other interesting properties. We report here Scanning Superconducting Quantum Interference Device (SQUID) imaging of the magnetic fields and susceptibility in a number of thin film LBCO samples with do** in the vicinity of the 1/8th anomaly. Spatially resolved measurements of the critical temperatures of these samples do not show a pronounced depression at 1/8th do**. They do, however, exhibit strong, nearly linear modulations of the susceptibility ("straie") of multiple samples with surprisingly long periods of 1-4 microns. Counterintuitively, vortices trap in positions of largest diamagnetic susceptibility in these striae. Given the rich interplay of different orders in this material system and its known sensitivity to epitaxial strain, we propose phase separation as a possible origin of these features and discuss scenarios in which that might arise. △ Less

Submitted 6 April, 2018; originally announced April 2018.

Comments: 8 pages, 10 figures

Journal ref: Phys. Rev. B 98, 014506 (2018)

Strain Control of Fermiology and Many-Body Interactions in Two-Dimensional Ruthenates

Authors: B. Burganov, C. Adamo, A. Mulder, M. Uchida, P. D. C. King, J. W. Harter, D. E. Shai, A. S. Gibbs, A. P. Mackenzie, R. Uecker, M. Bruetzam, M. R. Beasley, C. J. Fennie, D. G. Schlom, K. M. Shen

Abstract: Here we demonstrate how the Fermi surface topology and quantum many-body interactions can be manipulated via epitaxial strain in the spin-triplet superconductor Sr$_2$RuO$_4$ and its isoelectronic counterpart Ba$_2$RuO$_4$ using oxide molecular beam epitaxy (MBE), \emph{in situ} angle-resolved photoemission spectroscopy (ARPES), and transport measurements. Near the topological transition of the… ▽ More Here we demonstrate how the Fermi surface topology and quantum many-body interactions can be manipulated via epitaxial strain in the spin-triplet superconductor Sr$_2$RuO$_4$ and its isoelectronic counterpart Ba$_2$RuO$_4$ using oxide molecular beam epitaxy (MBE), \emph{in situ} angle-resolved photoemission spectroscopy (ARPES), and transport measurements. Near the topological transition of the $γ$ Fermi surface sheet, we observe clear signatures of critical fluctuations, while the quasiparticle mass enhancement is found to increase rapidly and monotonically with increasing Ru-O bond distance. Our work demonstrates the possibilities for using epitaxial strain as a disorder-free means of manipulating emergent properties, many-body interactions, and potentially the superconductivity in correlated materials. △ Less

Submitted 18 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. Lett. 116, 197003 (2016)

Manipulating superconductivity in ruthenates through Fermi surface engineering

Authors: Yi-Ting Hsu, Weejee Cho, Bulat Burganov, Carolina Adamo, Alejandro Federico Rebola, Kyle M. Shen, Darrell G. Schlom, Craig J. Fennie, Eun-Ah Kim

Abstract: The key challenge in superconductivity research is to go beyond the historical mode of discovery-driven research. We put forth a new strategy, which is to combine theoretical developments in the weak-coupling renormalization group approach with the experimental developments in lattice strain driven Fermi surface-engineering. For concreteness we theoretically investigate how superconducting tendenc… ▽ More The key challenge in superconductivity research is to go beyond the historical mode of discovery-driven research. We put forth a new strategy, which is to combine theoretical developments in the weak-coupling renormalization group approach with the experimental developments in lattice strain driven Fermi surface-engineering. For concreteness we theoretically investigate how superconducting tendencies will be affected by strain engineering of ruthenates' Fermi surface. We first demonstrate that our approach qualitatively reproduces recent experiments under uniaxial strain. We then note that order few $\%$ strain readily accessible to epitaxial thin films, can bring the Fermi surface close to van Hove singularity. Using the experimental observation of the change in the Fermi surface under biaxial epitaxial strain and ab-initio calculations, we predict ${\rm T}_{\rm c}$ for triplet pairing to be maximized by getting close to the van Hove singularities without tuning on to the singularity. △ Less

Submitted 22 April, 2016; originally announced April 2016.

Comments: 5 + 2 pages, 4 + 5 figures

Journal ref: Phys. Rev. B 94, 045118 (2016)

Spin and lattice excitations of a BiFeO3 thin film and ceramics

Authors: S. Skiadopoulou, V. Goian, C. Kadlec, F. Kadlec, X. F. Bai, I. C. Infante, B. Dkhil, C. Adamo, D. G. Schlom, S. Kamba

Abstract: We present a comprehensive study of polar and magnetic excitations in BiFeO3 ceramics and a thin film epitaxially grown on an orthorhombic (110) TbScO3 substrate. Infrared reflectivity spectroscopy was performed at temperatures from 5 to 900 K for the ceramics and below room temperature for the thin film. All 13 polar phonons allowed by the factor-group analysis were observed in theceramic samples… ▽ More We present a comprehensive study of polar and magnetic excitations in BiFeO3 ceramics and a thin film epitaxially grown on an orthorhombic (110) TbScO3 substrate. Infrared reflectivity spectroscopy was performed at temperatures from 5 to 900 K for the ceramics and below room temperature for the thin film. All 13 polar phonons allowed by the factor-group analysis were observed in theceramic samples. The thin-film spectra revealed 12 phonon modes only and an additional weak excitation, probably of spin origin. On heating towards the ferroelectric phase transition near 1100 K, some phonons soften, leading to an increase in the static permittivity. In the ceramics, terahertz transmission spectra show five low-energy magnetic excitations including two which were not previously known to be infrared active; at 5 K, their frequencies are 53 and 56 cm-1. Heating induces softening of all magnetic modes. At a temperature of 5 K, applying an external magnetic field of up to 7 T irreversibly alters the intensities of some of these modes. The frequencies of the observed spin excitations provide support for the recently developed complex model of magnetic interactions in BiFeO3 (R.S. Fishman, Phys. Rev. B 87, 224419 (2013)). The simultaneous infrared and Raman activity of the spin excitations is consistent with their assignment to electromagnons. △ Less

Submitted 21 May, 2015; originally announced May 2015.

Journal ref: Phys. Rev. B 91, 174108 (2015)

Giant optical enhancement of strain gradient in ferroelectric thin films and its physics origin

Authors: Yuelin Li, Carolina Adamo, Pice Chen, Paul G. Evans, Serge M. Nakhmanson, William Parker, Clare E. Rowland, Richard D. Schaller, Darrell G. Schlom, Donald A. Walko, Haidan Wen, Qingteng Zhang

Abstract: The coupling between strain gradients and polarization, known as flexoelectricity, offers a new mechanism to control the functionality of dielectric materials. However, for the effect to be practically attractive, dynamic control of the strain gradient with magnitudes far exceeding those achievable via mechanical deformation (~10 $m^{-1}$) is needed. Strain-engineered thin films exhibit extraordin… ▽ More The coupling between strain gradients and polarization, known as flexoelectricity, offers a new mechanism to control the functionality of dielectric materials. However, for the effect to be practically attractive, dynamic control of the strain gradient with magnitudes far exceeding those achievable via mechanical deformation (~10 $m^{-1}$) is needed. Strain-engineered thin films exhibit extraordinary strain gradients of $10^5-10^6 m{-1}$ arising from structural relaxation within a short space range that greatly enhances the steady-state flexoelectric effect. Here we report a giant, optically initiated dynamic enhancement of the strain gradient, also on the order of $10^5 -10^6 m^{-1}$, in ferroelectric BiFeO3 epitaxial thin films via time-dependent coherence analysis of X-ray diffractions. The finding opens the door for dynamic coupling of the flexoelectric effect with light, making optical switching of polarization, and thus application such as direct optical writing of non-volatile ferroelectric memory, possible. A combination of time-resolved X-ray scattering and optical spectroscopy shows that the enhancement of the strain gradient is due to a piezoelectric effect driven by a transient screening electric field, opening the opportunity for new ways of studying flexoelectric effect in strain engineered ferroelectric thin films. △ Less

Submitted 1 June, 2015; v1 submitted 8 April, 2015; originally announced April 2015.

Comments: 17 pages, 5 figures in the main text; 13 pages, 6 figures in the supplementary information

Localized excited charge carriers generate ultrafast inhomogeneous strain in the multiferroic BiFeO$_3$

Authors: D. Schick, M. Herzog, H. Wen, P. Chen, C. Adamo, P. Gaal, D. G. Schlom, P. G. Evans, Y. Li, M. Bargheer

Abstract: We apply ultrafast X-ray diffraction with femtosecond temporal resolution to monitor the lattice dynamics in a thin film of multiferroic BiFeO$_3$ after above-bandgap photoexcitation. The sound-velocity limited evolution of the observed lattice strains indicates a quasi-instantaneous photoinduced stress which decays on a nanosecond time scale. This stress exhibits an inhomogeneous spatial profile… ▽ More We apply ultrafast X-ray diffraction with femtosecond temporal resolution to monitor the lattice dynamics in a thin film of multiferroic BiFeO$_3$ after above-bandgap photoexcitation. The sound-velocity limited evolution of the observed lattice strains indicates a quasi-instantaneous photoinduced stress which decays on a nanosecond time scale. This stress exhibits an inhomogeneous spatial profile evidenced by the broadening of the Bragg peak. These new data require substantial modification of existing models of photogenerated stresses in BiFeO$_3$: the relevant excited charge carriers must remain localized to be consistent with the data. △ Less

Submitted 15 November, 2013; v1 submitted 7 November, 2013; originally announced November 2013.

Quantum many-body interactions in digital oxide superlattices

Authors: Eric J. Monkman, Carolina Adamo, Julia A. Mundy, Daniel E. Shai, John W. Harter, Dawei Shen, Bulat Burganov, David A. Muller, Darrell G. Schlom, Kyle M. Shen

Abstract: Controlling the electronic properties of interfaces has enormous scientific and technological implications and has been recently extended from semiconductors to complex oxides which host emergent ground states not present in the parent materials. These oxide interfaces present a fundamentally new opportunity where, instead of conventional bandgap engineering, the electronic and magnetic properties… ▽ More Controlling the electronic properties of interfaces has enormous scientific and technological implications and has been recently extended from semiconductors to complex oxides which host emergent ground states not present in the parent materials. These oxide interfaces present a fundamentally new opportunity where, instead of conventional bandgap engineering, the electronic and magnetic properties can be optimized by engineering quantum many-body interactions. We utilize an integrated oxide molecular-beam epitaxy and angle-resolved photoemission spectroscopy system to synthesize and investigate the electronic structure of superlattices of the Mott insulator LaMnO3 and the band insulator SrMnO3. By digitally varying the separation between interfaces in (LaMnO3)2n/(SrMnO3)n superlattices with atomic-layer precision, we demonstrate that quantum many-body interactions are enhanced, driving the electronic states from a ferromagnetic polaronic metal to a pseudogapped insulating ground state. This work demonstrates how many-body interactions can be engineered at correlated oxide interfaces, an important prerequisite to exploiting such effects in novel electronics. △ Less

Submitted 4 July, 2013; originally announced July 2013.

Comments: 14 pages, 13 figures. For published article, see http://www.nature.com/nmat/journal/v11/n10/full/nmat3405.html

Journal ref: Nature Materials 11, 855 (2012)

Quasiparticle Mass Enhancement and Temperature Dependence of the Electronic Structure of Ferromagnetic SrRuO3 Thin Films

Authors: D. E. Shai, C. Adamo, D. W. Shen, C. M. Brooks, J. W. Harter, E. J. Monkman, B. Burganov, D. G. Schlom, K. M. Shen

Abstract: We report high-resolution angle-resolved photoemission studies of epitaxial thin films of the correlated 4d transition metal oxide ferromagnet SrRuO3. The Fermi surface in the ferromagnetic state consists of well-defined Landau quasiparticles, exhibiting strong coupling to low-energy bosonic modes which contributes to the large effective masses observed by transport and thermodynamic measurements.… ▽ More We report high-resolution angle-resolved photoemission studies of epitaxial thin films of the correlated 4d transition metal oxide ferromagnet SrRuO3. The Fermi surface in the ferromagnetic state consists of well-defined Landau quasiparticles, exhibiting strong coupling to low-energy bosonic modes which contributes to the large effective masses observed by transport and thermodynamic measurements. Upon warming the material through its Curie temperature, we observe a substantial decrease in quasiparticle coherence, but negligible changes in the ferromagnetic exchange splitting, suggesting that local moments play an important role in the ferromagnetism in SrRuO3. △ Less

Submitted 11 March, 2013; v1 submitted 12 November, 2012; originally announced November 2012.

Comments: 5 pages, 4 figures, supplementary information (see other files)

Journal ref: Phys. Rev. Lett. 110, 087004 (2013)

Rationale for a new class of double-hybrid approximations in density-functional theory

Authors: Julien Toulouse, Kamal Sharkas, Eric Brémond, Carlo Adamo

Abstract: We provide a rationale for a new class of double-hybrid approximations introduced by Brémond and Adamo [J. Chem. Phys. 135, 024106 (2011)] which combine an exchange-correlation density functional with Hartree-Fock exchange weighted by $ł$ and second-order Møller-Plesset (MP2) correlation weighted by $ł^3$. We show that this double-hybrid model can be understood in the context of the density-scaled… ▽ More We provide a rationale for a new class of double-hybrid approximations introduced by Brémond and Adamo [J. Chem. Phys. 135, 024106 (2011)] which combine an exchange-correlation density functional with Hartree-Fock exchange weighted by $ł$ and second-order Møller-Plesset (MP2) correlation weighted by $ł^3$. We show that this double-hybrid model can be understood in the context of the density-scaled double-hybrid model proposed by Sharkas et al. [J. Chem. Phys. 134, 064113 (2011)], as approximating the density-scaled correlation functional $E_c[n_{1/ł}]$ by a linear function of $ł$, interpolating between MP2 at $ł=0$ and a density-functional approximation at $ł=1$. Numerical results obtained with the Perdew-Burke-Ernzerhof density functional confirms the relevance of this double-hybrid model. △ Less

Submitted 31 August, 2011; originally announced August 2011.

Comments: 4 pages, 2 figures, to appear in Journal of Chemical Physics

Optical Properties of (SrMnO3)n/(LaMnO3)2n superlattices: an insulator-to-metal transition observed in the absence of disorder

Authors: A. Perucchi, L. Baldassarre, A. Nucara, P. Calvani, C. Adamo, D. G. Schlom, P. Orgiani, L. Maritato, S. Lupi

Abstract: We measure the optical conductivity of (SrMnO3)n/(LaMnO3)2n superlattices (SL) for n=1,3,5, and 8 and 10 < T < 400 K. Data show a T-dependent insulator to metal transition (IMT) for n \leq 3, driven by the softening of a polaronic mid-infrared band. At n = 5 that softening is incomplete, while at the largest-period n=8 compound the MIR band is independent of T and the SL remains insulating. One ca… ▽ More We measure the optical conductivity of (SrMnO3)n/(LaMnO3)2n superlattices (SL) for n=1,3,5, and 8 and 10 < T < 400 K. Data show a T-dependent insulator to metal transition (IMT) for n \leq 3, driven by the softening of a polaronic mid-infrared band. At n = 5 that softening is incomplete, while at the largest-period n=8 compound the MIR band is independent of T and the SL remains insulating. One can thus first observe the IMT in a manganite system in the absence of the disorder due to chemical do**. Unsuccessful reconstruction of the SL optical properties from those of the original bulk materials suggests that (SrMnO3)n/(LaMnO3)2n heterostructures give rise to a novel electronic state. △ Less

Submitted 17 November, 2010; originally announced November 2010.

Comments: Published Online in Nano Letters, November 8, 2010; http://pubs.acs.org/doi/abs/10.1021/nl1022628; 5 pages, 3 figures

Journal ref: Nano Letters, 2010, 10 (Issue 12), pp 4819-4823

Evolution of magnetic phases and orbital occupation in (SrMnO3)n/(LaMnO3)2n superlattices

Authors: C. Aruta, C. Adamo, A. Galdi, P. Orgiani, V. Bisogni, N. B. Brookes, J. C. Cezar, P. Thakur, C. A. Perroni, G. De Filippis, V. Cataudella, D. G. Schlom, L. Maritato, G. Ghiringhelli

Abstract: The magnetic and electronic modifications induced at the interfaces in (SrMnO$_{3}$)$_{n}$/(LaMnO$_{3}$)$_{2n}$ superlattices have been investigated by linear and circular magnetic dichroism in the Mn L$_{2,3}$ x-ray absorption spectra. Together with theoretical calculations, our data demonstrate that the charge redistribution across interfaces favors in-plane ferromagnetic (FM) order and… ▽ More The magnetic and electronic modifications induced at the interfaces in (SrMnO$_{3}$)$_{n}$/(LaMnO$_{3}$)$_{2n}$ superlattices have been investigated by linear and circular magnetic dichroism in the Mn L$_{2,3}$ x-ray absorption spectra. Together with theoretical calculations, our data demonstrate that the charge redistribution across interfaces favors in-plane ferromagnetic (FM) order and $e_{g}(x^{2}-y^{2})$ orbital occupation, in agreement with the average strain. Far from interfaces, inside LaMnO$_3$, electron localization and local strain favor antiferromagnetism (AFM) and $e_{g}(3z^{2}-r^{2})$ orbital occupation. For $n=1$ the high density of interfacial planes ultimately leads to dominant FM order forcing the residual AFM phase to be in-plane too, while for $n \geq 5$ the FM layers are separated by AFM regions having out-of-plane spin orientation. △ Less

Submitted 23 September, 2009; originally announced September 2009.

Comments: accepted for publication as a Rapid Communication in Physical Review B

Journal ref: Phys. Rev. B 80, 140405(R) (2009)

Transport properties in manganite thin films

Authors: S. Mercone, C. A. Perroni, V. Cataudella, C. Adamo, M. Angeloni, C. Aruta, G. De Filippis, F. Miletto, A. Oropallo, P. Perna, A. Yu. Petrov, U. Scotti di Uccio, L. Maritato

Abstract: The resistivity of thin $La_{0.7}A_{0.3}MnO_{3}$ films ($A=Ca, Sr$) is investigated in a wide temperature range. The comparison of the resistivities is made among films grown by different techniques and on several substrates allowing to analyze samples with different amounts of disorder. In the low-temperature nearly half-metallic ferromagnetic state the prominent contribution to the resistivity… ▽ More The resistivity of thin $La_{0.7}A_{0.3}MnO_{3}$ films ($A=Ca, Sr$) is investigated in a wide temperature range. The comparison of the resistivities is made among films grown by different techniques and on several substrates allowing to analyze samples with different amounts of disorder. In the low-temperature nearly half-metallic ferromagnetic state the prominent contribution to the resistivity scales as $T^α$ with $α\simeq 2.5$ for intermediate strengths of disorder supporting the theoretical proposal of single magnon scattering in presence of minority spin states localized by the disorder. For large values of disorder the low-temperature behavior of the resistivity is well described by the law $T^{3}$ characteristic of anomalous single magnon scattering processes, while in the regime of low disorder the $α$ exponent tends to a value near 2. In the high temperature insulating paramagnetic phase the resistivity shows the activated behavior characteristic of polaronic carriers. Finally in the whole range of temperatures the experimental data are found to be consistent with a phase separation scenario also in films doped with strontium ($A=Sr$). △ Less

Submitted 28 October, 2004; originally announced October 2004.

Comments: 5 figures

Journal ref: Physical Review B 71, 064415 (2005)