Origin of ultra-low thermal conductivity in unconventional clathrates: Strong scattering from extremely low-frequency rattling modes
Authors:
Kamil M. Ciesielski,
Brenden R. Ortiz,
Lidia C. Gomes,
Vanessa Meschke,
Jesse M. Adamczyk,
Tara L. Braden,
Dariusz Kaczorowski,
Elif Ertekin,
Eric S. Toberer
Abstract:
Recent discoveries of materials with ultra-low thermal conductivity open a pathway to significant developments in the field of thermoelectricity. Here, we conduct a comparative study of three chemically similar antimonides to establish the root causes of their extraordinarily low thermal conductivity ($0.4-0.6$ Wm$^{-1}$K$^{-1}$ at 525 K). The materials of interest are: the unconventional type-XI…
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Recent discoveries of materials with ultra-low thermal conductivity open a pathway to significant developments in the field of thermoelectricity. Here, we conduct a comparative study of three chemically similar antimonides to establish the root causes of their extraordinarily low thermal conductivity ($0.4-0.6$ Wm$^{-1}$K$^{-1}$ at 525 K). The materials of interest are: the unconventional type-XI clathrate K$_{58}$Zn$_{122}$Sb$_{207}$, the tunnel compound K$_{6.9}$Zn$_{21}$Sb$_{16}$, and the type-I clathrate K$_8$Zn$_{15.5}$Cu$_{2.5}$Sb$_{28}$ discovered herein. Calculations of the phonon dispersions show that the type-XI compound exhibits localized (i.e., rattling) phonon modes with unusually low frequencies that span the entire acoustic regime. In contrast, rattling in the type-I clathrate is observed only at higher frequencies, and no rattling modes are present in the tunnel structure. Modeling reveals that low-frequency rattling modes profoundly limit the acoustic scattering time; the scattering time of the type-XI clathrate is half that of the type-I clathrate and a quarter of the tunnel compound. For all three materials, the thermal conductivities are additionally suppressed by soft framework bonding that lowers the acoustic group velocities, and structural complexity that leads to diffusonic character of the optical modes. Understanding details of thermal transport in structurally complex materials will be crucial for develo** the next generation of thermoelectrics.
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Submitted 25 January, 2023;
originally announced January 2023.
Boron phosphide films by reactive sputtering: Searching for a p-type transparent conductor
Authors:
Andrea Crovetto,
Jesse M. Adamczyk,
Rekha R. Schnepf,
Craig L. Perkins,
Hannes Hempel,
Sage R. Bauers,
Eric S. Toberer,
Adele C. Tamboli,
Thomas Unold,
Andriy Zakutayev
Abstract:
With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with epitaxial, nominally undoped BP films by chemical vapor deposition. High hole concentrations were often observed, but it is unclear if native defects alone can be resp…
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With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with epitaxial, nominally undoped BP films by chemical vapor deposition. High hole concentrations were often observed, but it is unclear if native defects alone can be responsible for it. Besides, the feasibility of alternative deposition techniques has not been clarified and optical characterization is generally lacking. In this work, we demonstrate reactive sputtering of amorphous BP films, their partial crystallization in a P-containing annealing atmosphere, and extrinsic do** by C and Si. We obtain the highest hole concentration reported to date for p-type BP ($5 \times 10^{20}$ cm$^{-3}$) using C do** under B-rich conditions. We also confirm that bipolar do** is possible in BP. An anneal temperature of at least 1000 $^\circ$C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are much stronger than predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality.
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Submitted 15 December, 2021; v1 submitted 14 December, 2021;
originally announced December 2021.
