Showing 1–11 of 11 results for author: Achilli, S

Unravelling the Band Structure and Orbital Character of a $π$-Conjugated 2D Graphdiyne-Based Organometallic Network

Authors: Paolo D'Agosta, Simona Achilli, Francesco Tumino, Alessio Orbelli Biroli, Giovanni Di Santo, Luca Petaccia, Giovanni Onida, Andrea Li Bassi, Jorge Lobo-Checa, Carlo S. Casari

Abstract: Graphdiyne-based carbon systems generate intriguing layered sp-sp$^2$ organometallic lattices, characterized by flexible acetylenic groups connecting planar carbon units through metal centers. At their thinnest limit, they can result in two-dimensional (2D) organometallic networks exhibiting unique quantum properties and even confining the surface states of the substrate, which is of great importa… ▽ More Graphdiyne-based carbon systems generate intriguing layered sp-sp$^2$ organometallic lattices, characterized by flexible acetylenic groups connecting planar carbon units through metal centers. At their thinnest limit, they can result in two-dimensional (2D) organometallic networks exhibiting unique quantum properties and even confining the surface states of the substrate, which is of great importance for fundamental studies. In this work, we present the on-surface synthesis of a highly crystalline 2D organometallic network grown on Ag(111). The electronic structure of this mixed honeycomb-kagome arrangement - investigated by angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy - reveals a strong electronic conjugation within the network, leading to the formation of two intense electronic band-manifolds. In comparison to theoretical density functional theory calculations, we observe that these bands exhibit a well-defined orbital character that can be associated with distinct regions of the sp-sp$^2$ monomers. Moreover, we find that the halogen by-products resulting from the network formation locally affect the pore-confined states, causing a significant energy shift. This work contributes to the understanding of the growth and electronic structure of graphdiyne-like 2D networks, providing insights into the development of novel carbon materials beyond graphene with tailored properties. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Comments: 11 pages, 4 figures + supporting information (5 pages, 10 figures)

Steric hindrance in the on-surface synthesis of diethynyl-linked anthracene polymers

Authors: Simona Achilli, Francesco Tumino, Andi Rabia, Alessio Orbelli Biroli, Andrea Li Bassi, Alberto Bossi, Nicola Manini, Giovanni Onida, Guido Fratesi, Carlo Spartaco Casari, ---

Abstract: Hybrid sp-sp2 structures can be efficiently obtained on metal substrates via on-surface synthesis. The choice of both the precursor and of the substrate impacts on the effectiveness of the process and the stability of the formed structures. Here we demonstrate that using anthracene-based molecules as precursor, the formation on Au(111) of polymers hosting sp carbon chains is affected by the steric… ▽ More Hybrid sp-sp2 structures can be efficiently obtained on metal substrates via on-surface synthesis. The choice of both the precursor and of the substrate impacts on the effectiveness of the process and the stability of the formed structures. Here we demonstrate that using anthracene-based molecules as precursor, the formation on Au(111) of polymers hosting sp carbon chains is affected by the steric hindrance between aromatic groups. In particular, by scanning tunneling microscopy and density functional theory calculations we show that the de-metalation of organometallic structures induces a lateral separation of adjacent polymers preventing the formation of ordered domains. △ Less

Submitted 14 March, 2022; originally announced March 2022.

Journal ref: Phys. Chem. Chem. Phys., 2022,24, 13616-13624

Graphdiynes interacting with metal surfaces: first-principles electronic and vibrational properties

Authors: Simona Achilli, Alberto Milani, Guido Fratesi, Francesco Tumino, Nicola Manini, Giovanni Onida, Carlo S. Casari

Abstract: Graphdiynes (GDYs) represent a class of 2D carbon materials based on sp-sp$^2$ hybridization with appealing properties and potential applications. Recent advances have demonstrated the experimental self-assembly of GDYs on metal substrates. Here we focus on $α$- and $β$-GDYs on Au(111) and Pt(111), and investigate how their electronic and vibrational properties are affected by the interaction with… ▽ More Graphdiynes (GDYs) represent a class of 2D carbon materials based on sp-sp$^2$ hybridization with appealing properties and potential applications. Recent advances have demonstrated the experimental self-assembly of GDYs on metal substrates. Here we focus on $α$- and $β$-GDYs on Au(111) and Pt(111), and investigate how their electronic and vibrational properties are affected by the interaction with a metal substrate. We adopt hydrogenated GDY, previously characterized experimentally, as a benchmark for density functional theory simulations, that we apply to show that Au and Pt substrates impose a different degree of distortion on both $α$- and $β$-GDY. By comparing the adsorbed and the freestanding structures, we evaluate the effect of the surface interaction on the bandstructure and the simulated Raman spectra. Different charge transfers result in different energy shift of the Dirac cone in semi-metallic $α$-GDY and changes from semiconducting to metallic behavior for $β$-GDY. These changes in electronic properties are accompanied by characteristic frequency shifts and modifications of Raman active modes. Our results contribute in the understanding of the metal-interaction effects on GDYs and can open a route to the design of novel 2D materials with tailored properties. △ Less

Submitted 1 November, 2021; originally announced November 2021.

Journal ref: 2D Materials 8 (2021) 044014

Independent and coherent transitions between antiferromagnetic states of few-molecule systems

Authors: Claire Besson, Philipp Stegmann, Michael Schnee, Zeila Zanolli, Simona Achilli, Nils Wittemeier, Asmus Vierck, Robert Frielinghaus, Paul Kögerler, Janina Maultzsch, Pablo Ordejón, Claus M. Schneider, Alfred Hucht, Jürgen König, Carola Meyer

Abstract: Spin-electronic devices are poised to become part of mainstream microelectronic technology .Downsizing them, however, faces the intrinsic difficulty that as ferromagnets become smaller, it becomes more difficult to stabilize their magnetic moment. Antiferromagnets are much more stable, and thus research on antiferromagnetic spintronics has developed into a fast-growing field. Here, we provide proo… ▽ More Spin-electronic devices are poised to become part of mainstream microelectronic technology .Downsizing them, however, faces the intrinsic difficulty that as ferromagnets become smaller, it becomes more difficult to stabilize their magnetic moment. Antiferromagnets are much more stable, and thus research on antiferromagnetic spintronics has developed into a fast-growing field. Here, we provide proof of concept data that allows us to expand the area of antiferromagnetic spintronics to the hitherto elusive level of individual molecules. In contrast to all previous work on molecular spintronics, our detection scheme of the molecule's spin state does not rely on a magnetic moment. Instead, we use field-effect transistor devices constituting of an isolated, contacted single-wall carbon nanotube covalently bound to a limited number of molecular antiferromagnets incorporating four Mn(II) or Co(II) ions. Time-dependent quantum transport measurement along the functionalized nanotube show step-like transitions between several distinct current levels, which we attribute to transitions between different antiferromagnetic states of individual molecular complexes grafted on the nanotube. A statistical analysis of the switching events using factorial cumulants indicates that the cobalt complexes switch independently from each other, while a coherent superposition of the antiferromagnetic spin states of the molecules along the nanotube is observed for the manganese complexes. The long coherence time (several seconds at 100 mK) is made possible by the absence of spin and orbital momentum in the relevant states of the manganese complex, while the cobalt complex includes a significant orbital momentum contribution due to the pseudo-octahedral d$^7$ metal centers. △ Less

Submitted 21 June, 2023; v1 submitted 16 July, 2021; originally announced July 2021.

Comments: including supplementary information

Journal ref: Physical Review B, vol 107, 2023, 245414

Magnetic properties of {M$_4$} coordination clusters with different magnetic cores (M=Co, Mn)

Authors: Simona Achilli, Claire Besson, Xu He, Pablo Ordejòn, Carola Meyer, Zeila Zanolli

Abstract: We present a joint experimental and theoretical characterization of the magnetic properties of coordination clusters with an antiferromagnetic core of four magnetic ions. Two different compounds are analyzed, with Co and Mn ions in the core. While both molecules are antiferromagnetic, they display different sensitivities to external magnetic field, according to the different strength of the intra-… ▽ More We present a joint experimental and theoretical characterization of the magnetic properties of coordination clusters with an antiferromagnetic core of four magnetic ions. Two different compounds are analyzed, with Co and Mn ions in the core. While both molecules are antiferromagnetic, they display different sensitivities to external magnetic field, according to the different strength of the intra-molecular magnetic coupling. In particular, the dependence of the magnetization versus field of the two molecules switches with temperatures: at low temperature the magnetization is smaller in \{Mn$_4$\}, while the opposite happens at high temperature. Through a detailed analysis of the electronic and magnetic properties of the two compounds we identify a stronger magnetic interaction between the magnetic ions in \{Mn$_4$\} with respect to \{Co$_4$\}. Moreover \{Co$_4$\} displays not negligible spin-orbit related effects that could affect the spin lifetime in future antiferromagnetic spintronic applications. We highlight the necessity to account for these spin-orbit effects for a reliable description of these compounds. △ Less

Submitted 15 September, 2021; v1 submitted 15 July, 2021; originally announced July 2021.

Comments: 8 pages, 5 figures + supplementary Information

Photoinduced coherent modulation of an excitonic resonance via coupling with coherent optical phonons

Authors: Selene Mor, Valentina Gosetti, Alejandro Molina-Sánchez, Davide Sangalli, Simona Achilli, Vadim. F. Agekyan, Paolo Franceschini, Claudio Giannetti, Luigi Sangaletti, Stefania Pagliara

Abstract: The coupling of excitons with atomic vibrations plays a pivotal role on the nonequilibrium optical properties of layered semiconductors. However, addressing the dynamical interaction between excitons and phonons represents a hard task both experimentally and theoretically. By means of time-resolved broadband optical reflectivity combined with state-of-the-art ab-initio calculations of a bismuth tr… ▽ More The coupling of excitons with atomic vibrations plays a pivotal role on the nonequilibrium optical properties of layered semiconductors. However, addressing the dynamical interaction between excitons and phonons represents a hard task both experimentally and theoretically. By means of time-resolved broadband optical reflectivity combined with state-of-the-art ab-initio calculations of a bismuth triiodide single crystal, we unravel the universal spectral fingerprints of exciton--phonon coupling in layered semiconductors. Furthermore, we microscopically relate a photoinduced coherent energy modulation of the excitonic resonance to coherent optical phonons, thereby tracking the extent of the photoinduced atomic displacement in real-space. Our findings represent a step forward on the road to coherent manipulation of the excitonic properties on ultrafast timescales. △ Less

Submitted 26 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. Research 3, 043175 Published 13 December 2021

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Authors: Simona Achilli, Nguyen H. Le, Guido Fratesi, Nicola Manini, Giovanni Onida, Marco Turchetti, Giorgio Ferrari, Takahiro Shinada, Takashi Tanii, Enrico Prati

Abstract: Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investi… ▽ More Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies. △ Less

Submitted 4 February, 2021; v1 submitted 2 February, 2021; originally announced February 2021.

Structural, Electronic, and Vibrational Properties of 2D Graphdiyne-Like Carbon Nanonetwork Synthesized on Au(111): Implications for the Engineering of sp-sp2 Carbon Nanostructures

Authors: Andi Rabia, Francesco Tumino, Alberto Milani, Valeria Russo, Andrea Li Bassi, Nicolò Bassi, Andrea Lucotti, Simona Achilli, Guido Fratesi, Nicola Manini, Giovanni Onida, Qiang Sun, Wei Xu, Carlo S. Casari

Abstract: Graphdiyne, atomically-thin 2D carbon nanostructure based on sp-sp2 hybridization, is an appealing system potentially showing outstanding mechanical and optoelectronic properties. Surface-catalyzed coupling of halogenated sp-carbon-based molecular precursors represents a promising bottom-up strategy to fabricate extended 2D carbon systems with engineered structure on metallic substrates. Here, we… ▽ More Graphdiyne, atomically-thin 2D carbon nanostructure based on sp-sp2 hybridization, is an appealing system potentially showing outstanding mechanical and optoelectronic properties. Surface-catalyzed coupling of halogenated sp-carbon-based molecular precursors represents a promising bottom-up strategy to fabricate extended 2D carbon systems with engineered structure on metallic substrates. Here, we investigate the atomic-scale structure and electronic and vibrational properties of an extended graphdiyne-like sp-sp2 carbon nanonetwork grown on Au(111) by means of on-surface synthesis. The formation of such 2D nanonetwork at its different stages as a function of the annealing temperature after the deposition is monitored by scanning tunneling microscopy (STM), Raman spectroscopy and combined with density functional theory (DFT) calculations. High-resolution STM imaging and the high sensitivity of Raman spectroscopy to the bond nature provide a unique strategy to unravel the atomic-scale properties of sp-sp2 carbon nanostructures. We show that hybridization between the 2D carbon nanonetwork and the underlying substrate states strongly affects its electronic and vibrational properties, modifying substantially the density of states and the Raman spectrum compared to the free standing system. This opens the way to the modulation of the electronic properties with significant prospects in future applications as active nanomaterials for catalysis, photoconversion and carbon-based nanoelectronics. △ Less

Submitted 24 November, 2020; originally announced November 2020.

Journal ref: ACS Appl. Nano Mater. 3, 2178-12187 (2020)

Keto-enol tautomerization drives the self-assembly of Leucoquinizarin on Au(111)

Authors: Roberto Costantini, Luciano Colazzo, Laura Batini, Matus Stredansky, Mohammed S. G. Mohammed, Simona Achilli, Luca Floreano, Guido Fratesi, Dimas G. de Oteyza, Albano Cossaro

Abstract: The self-assembly of Leucoquinizarin molecule on Au(111) surface is shown to be characterized by the molecules mostly in their keto-enolic tautomeric form, with evidences of their temporary switching to other tautomeric forms. This reveals a metastable chemistry of the assembled molecules, to be considered for their possible employment in the formation of more complex hetero-organic interfaces The self-assembly of Leucoquinizarin molecule on Au(111) surface is shown to be characterized by the molecules mostly in their keto-enolic tautomeric form, with evidences of their temporary switching to other tautomeric forms. This reveals a metastable chemistry of the assembled molecules, to be considered for their possible employment in the formation of more complex hetero-organic interfaces △ Less

Submitted 11 December, 2020; v1 submitted 5 March, 2020; originally announced March 2020.

Journal ref: Chemical Communications 2020, 56, 2833-2836

GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

Authors: Simona Achilli, Nicola Manini, Giovanni Onida, Takahiro Shinada, Takashi Tanii, Enrico Prati

Abstract: We characterize germanium-vacancy GeVn complexes in silicon using first-principles Density Functional Theory calculations with screening-dependent hybrid functionals. We report on the local geometry and electronic excited states of these defects, including charge transition levels corresponding to the addition of one or more electrons to the defect. Our main theoretical result concerns the GeV com… ▽ More We characterize germanium-vacancy GeVn complexes in silicon using first-principles Density Functional Theory calculations with screening-dependent hybrid functionals. We report on the local geometry and electronic excited states of these defects, including charge transition levels corresponding to the addition of one or more electrons to the defect. Our main theoretical result concerns the GeV complex, which we show to give rise to two excited states deep in the gap, at -0.51 and -0.35 eV from the conduction band, consistently with the available spectroscopic data. The adopted theoretical scheme, suitable to compute a reliable estimate of the wavefunction decay, leads us to predict that such states are associated to an electron localization over a length of about 0.45 nm. By combining the electronic properties of the bare silicon vacancy, carrying deep states in the band gap, with the spatial controllability arising from single Ge ion implantation techniques, the GeVn complex emerges as a suitable ingredient for silicon-based room-temperature single-atom devices. △ Less

Submitted 28 January, 2019; v1 submitted 4 March, 2018; originally announced March 2018.

Journal ref: Scientific Reports 8, 18054 (2018)

Experimental realization of a topological p-n junction by intrinsic defect-grading

Authors: T. Bathon, S. Achilli, P. Sessi, V. A. Golyashov, K. A. Kokh, O. E. Tereshchenko, M. Bode

Abstract: A junction between an n- and p-type semiconductor results in the creation of a depletion region whose properties are at the basis of nowadays electronics. If realized using topological insulators as constituent materials, p-n junctions are expected to manifest several unconventional effects with great potential for applications. Experimentally, all these fascinating properties remained unexplored… ▽ More A junction between an n- and p-type semiconductor results in the creation of a depletion region whose properties are at the basis of nowadays electronics. If realized using topological insulators as constituent materials, p-n junctions are expected to manifest several unconventional effects with great potential for applications. Experimentally, all these fascinating properties remained unexplored so far, mainly because prototypical topological PNJs, which can be easily realized and investigated, were not readily available. Here, we report on the creation of topological PNJs which can be as narrow as few tenths of nm showing a built-in potential of 110meV. These junctions are intrinsically obtained by a thermodynamic control of the defects distribution across the crystal. Our results make Bi2Te3 a robust and reliable platform to explore the physics of topological p-n junction. △ Less

Submitted 21 December, 2015; originally announced December 2015.

Journal ref: Advanced Materials 28, 2183 (2016)