Showing 1–2 of 2 results for author: Acartürk, T
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Controlling the Electrical Properties of Undoped and Ta-doped TiO2 Polycrystalline Films via Ultra-Fast Annealing Treatments
Authors:
Piero Mazzolini,
Tolga Acartürk,
Daniel Chrastina,
Ulrich Starke,
Carlo S. Casari,
Giuliano Gregori,
Andrea Li Bassi
Abstract:
We present a study on the crystallization process of undoped and Ta doped TiO2 amorphous thin films. In particular, the effect of ultra-fast annealing treatments in environments characterized by different oxygen concentrations is investigated via in-situ resistance measurements. The accurate examination of the key parameters involved in this process allows us to reduce the time needed to obtain hi…
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We present a study on the crystallization process of undoped and Ta doped TiO2 amorphous thin films. In particular, the effect of ultra-fast annealing treatments in environments characterized by different oxygen concentrations is investigated via in-situ resistance measurements. The accurate examination of the key parameters involved in this process allows us to reduce the time needed to obtain highly conducting and transparent polycrystalline thin films (resistivity about $6 \times 10^{-4}$ Ωcm, mean transmittance in the visible range about $81\%$) to just 5 minutes (with respect to the 180 minutes required for a standard vacuum annealing treatment) in nitrogen atmosphere (20 ppm oxygen concentration) at ambient pressure. Experimental evidence of superficial oxygen incorporation in the thin films and its detrimental role for the conductivity are obtained by employing different concentrations of traceable 18O isotopes during ultra-fast annealing treatments. The results are discussed in view of the possible implementation of the ultra-fast annealing process for TiO2-based transparent conducting oxides as well as electron selective layers in solar cell devices; taking advantage of the high control of the ultra-fast crystallization processes which has been achieved, these two functional layers are shown to be obtainable from the crystallization of a single homogeneous thin film.
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Submitted 9 September, 2015;
originally announced September 2015.
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X-ray and neutron reflectometry study of copper surface reconstruction caused by implantation of high-energy oxygen ions
Authors:
Yu. N. Khaydukov,
O. Soltwedel,
Yu. A. Marchenko,
D. Yu. Khaidukova,
A. Csik,
T. Acartürk,
U. Starke,
T. Keller,
A. G. Guglya,
Kh. R. Kazdayev
Abstract:
Combination of neutron and X-ray reflectometry was used to study the vertical structure of 100 nm-thin copper films with implanted oxygen ions of energy E = [10-30] keV and doses D=[0.2-5.4]x$10^{16}$ $cm^{-2}$. The study shows that oxygen ion implantation with an energy of E = 30 keV leads to the formation of a 3 nm thick layer on the surface. Density and copper/oxygen stoichiometry of the observ…
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Combination of neutron and X-ray reflectometry was used to study the vertical structure of 100 nm-thin copper films with implanted oxygen ions of energy E = [10-30] keV and doses D=[0.2-5.4]x$10^{16}$ $cm^{-2}$. The study shows that oxygen ion implantation with an energy of E = 30 keV leads to the formation of a 3 nm thick layer on the surface. Density and copper/oxygen stoichiometry of the observed surface layer are close to $Cu_2O$ oxide. We attribute the $Cu_2O$ oxide formation to highly mobilized copper atoms generated by stimulated ion implantation.
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Submitted 14 December, 2014;
originally announced December 2014.
