Showing 1–50 of 66 results for author: Abstreiter, G

Ultrafast photodetection in the quantum wells of single AlGaAs/GaAs-based nanowires

Authors: Nadine Erhard, Stefan Zenger, Stefanie Morkötter, Daniel Rudolph, Matthias Weiss, Hubert J. Krenner, Helmut Karl, Gerhard Abstreiter, Jonathan J. Finley, Gregor Koblmüller, Alexander W. Holleitner

Abstract: We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based… ▽ More We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photo-thermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors. △ Less

Submitted 16 November, 2015; originally announced November 2015.

Photocurrents in a Single InAs Nanowire/ Silicon Heterojunction

Authors: Andreas Brenneis, Jan Overbeck, Julian Treu, Simon Hertenberger, Stefanie Morkötter, Markus Döblinger, Jonathan J. Finley, Gerhard Abstreiter, Gregor Koblmüller, Alexander W. Holleitner

Abstract: We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through mid-gap trap states, which form at the Si… ▽ More We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through mid-gap trap states, which form at the Si/InAs heterojunctions. Namely, the trap states add an additional transport path across a heterojunction, and the charge of the defects changes the band bending at the junction. The bending gives rise to a photovoltaic effect at a small bias voltage. In addition, we observe a photoconductance effect within the InAs nanowires at large biases. △ Less

Submitted 5 October, 2015; originally announced October 2015.

Coulomb mediated hybridization of excitons in artificial molecules

Authors: P. -L. Ardelt, K. Gawarecki, K. Müller, A. M. Waeber, A. Bechtold, K. Oberhofer, J. M. Daniels, F. Klotz, M. Bichler, T. Kuhn, H. J. Krenner, P. Machnikowski, G. Abstreiter, J. J. Finley

Abstract: We report the Coulomb mediated hybridization of excitonic states in an optically active, artificial quantum dot molecule. By probing the optical response of the artificial molecule as a function of the static electric field applied along the molecular axis, we observe unexpected avoided level crossings that do not arise from the dominant single particle tunnel coupling. We identify a new few-parti… ▽ More We report the Coulomb mediated hybridization of excitonic states in an optically active, artificial quantum dot molecule. By probing the optical response of the artificial molecule as a function of the static electric field applied along the molecular axis, we observe unexpected avoided level crossings that do not arise from the dominant single particle tunnel coupling. We identify a new few-particle coupling mechanism stemming from Coulomb interactions between different neutral exciton states. Such Coulomb resonances hybridize the exciton wave function over four different electron and hole single-particle orbitals. Comparisons of experimental observations with microscopic 8-band $k \cdot p$ calculations taking into account a realistic quantum dot geometry show good agreement and reveal that the Coulomb resonances arise from broken symmetry in the artificial molecule. △ Less

Submitted 29 September, 2015; originally announced September 2015.

Journal ref: Phys. Rev. Lett. 116, 077401 (2016)

Ultrafast photocurrents and THz generation in single InAs-nanowires

Authors: Nadine Erhard, Paul Seifert, Leonhard Prechtel, Simon Hertenberger, Helmut Karl, Gerhard Abstreiter, Gregor Koblmuller, Alexander W. Holleitner

Abstract: To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contr… ▽ More To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contributions. Moreover, it is shown that THz radiation is generated in the optically excited InAs-nanowires, which is interpreted in terms of a dominating photo-Dember effect. The results are relevant for nanowire-based optoelectronic and photovoltaic applications as well as for the design of nanowire-based THz sources. △ Less

Submitted 12 February, 2015; originally announced February 2015.

Dynamic Acoustic Control of Individual Optically Active Quantum Dot-like Emission Centers in Heterostructure Nanowires

Authors: Matthias Weiß, Jörg B. Kinzel, Florian J. R. Schülein, Michael Heigl, Daniel Rudolph, Stefanie Morkötter, Markus Döblinger, Max Bichler, Gerhard Abstreiter, Jonathan J. Finley, Gregor Koblmüller, Achim Wixforth, Hubert J. Krenner

Abstract: We probe and control the optical properties of emission centers forming in radial het- erostructure GaAs-Al0.3Ga0.7As nanowires and show that these emitters, located in Al0.3Ga0.7As layers, can exhibit quantum-dot like characteristics. We employ a radio frequency surface acoustic wave to dynamically control their emission energy and occupancy state on a nanosec- ond timescale. In the spectral osci… ▽ More We probe and control the optical properties of emission centers forming in radial het- erostructure GaAs-Al0.3Ga0.7As nanowires and show that these emitters, located in Al0.3Ga0.7As layers, can exhibit quantum-dot like characteristics. We employ a radio frequency surface acoustic wave to dynamically control their emission energy and occupancy state on a nanosec- ond timescale. In the spectral oscillations we identify unambiguous signatures arising from both the mechanical and electrical component of the surface acoustic wave. In addition, differ- ent emission lines of a single quantum dot exhibit pronounced anti-correlated intensity oscilla- tions during the acoustic cycle. These arise from a dynamically triggered carrier extraction out of the quantum dot to a continuum in the radial heterostructure. Using finite element modeling and Wentzel-Kramers-Brillouin theory we identify quantum tunneling as the underlying mech- anism. These simulation results quantitatively reproduce the observed switching and show that in our systems these quantum dots are spatially separated from the continuum by > 10.5 nm. △ Less

Submitted 8 October, 2014; originally announced October 2014.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright \c{copyright} American Chemical Society after peer review. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/nl4040434

Journal ref: Nano Letters 14, 2256 (2014)

Directional and dynamic modulation of the optical emission of an individual GaAs nanowire using surface acoustic waves

Authors: Jörg B. Kinzel, Daniel Rudolph, Max Bichler, Gerhard Abstreiter, Jonathan J. Finley, Gregor Koblmüller, Achim Wixforth, Hubert J. Krenner

Abstract: We report on optical experiments performed on individual GaAs nanowires and the ma- nipulation of their temporal emission characteristics using a surface acoustic wave. We find a pronounced, characteristic suppression of the emission intensity for the surface acoustic wave propagation aligned with the axis of the nanowire. Furthermore, we demonstrate that this quenching is dynamical as it shows a… ▽ More We report on optical experiments performed on individual GaAs nanowires and the ma- nipulation of their temporal emission characteristics using a surface acoustic wave. We find a pronounced, characteristic suppression of the emission intensity for the surface acoustic wave propagation aligned with the axis of the nanowire. Furthermore, we demonstrate that this quenching is dynamical as it shows a pronounced modulation as the local phase of the surface acoustic wave is tuned. These effects are strongly reduced for a SAW applied in the direction perpendicular to the axis of the nanowire due to their inherent one-dimensional geometry. We resolve a fully dynamic modulation of the nanowire emission up to 678 MHz not limited by the physical properties of the nanowires. △ Less

Submitted 8 October, 2014; originally announced October 2014.

Comments: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright \c{opyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/nl1042775

Journal ref: Nano Letters 11, 1512-1517 (2011)

Dissipative preparation of the exciton and biexciton in a self-assembled quantum dot on picosecond timescales

Authors: Per-Lennart Ardelt, Lukas Hanschke, Kevin A. Fischer, Kai Müller, Alexander Kleinkauf, Manuel Koller, Alexander Bechtold, Tobias Simmet, Jakob Wierzbowski, Hubert Riedl, Gerhard Abstreiter, Jonathan. J. Finley

Abstract: Pulsed resonant fluorescence is used to probe ultrafast phonon-assisted exciton and biexciton preparation in individual self-assembled InGaAs quantum dots. By driving the system using large area ($\geq10π$) near resonant optical pulses, we experimentally demonstrate how phonon mediated dissipation within the manifold of dressed excitonic states can be used to prepare the neutral exciton with a fid… ▽ More Pulsed resonant fluorescence is used to probe ultrafast phonon-assisted exciton and biexciton preparation in individual self-assembled InGaAs quantum dots. By driving the system using large area ($\geq10π$) near resonant optical pulses, we experimentally demonstrate how phonon mediated dissipation within the manifold of dressed excitonic states can be used to prepare the neutral exciton with a fidelity $\geq 70\%$. By comparing the phonon-assisted preparation with resonant Rabi oscillations we show that the phonon-mediated process provides the higher fidelity preparation for large pulse areas and is less sensitive to pulse area variations. Moreover, by detuning the laser with respect to the exciton transition we map out the spectral density for exciton coupling to the bulk LA-phonon continuum. Similar phonon mediated processes are shown to facilitate direct biexciton preparation via two photon biexciton absorption, with fidelities $>80\%$. Our results are found to be in very good quantitative agreement with simulations that model the quantum dot-phonon bath interactions with Bloch-Redfield theory. △ Less

Submitted 21 September, 2014; originally announced September 2014.

Journal ref: Phys.Rev.B 90, 241404(R) (2014)

Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well

Authors: Rai Moriya, Kentarou Sawano, Yusuke Hoshi, Satoru Masubuchi, Yasuhiro Shiraki, Andreas Wild, Christian Neumann, Gerhard Abstreiter, Dominique Bougeard, Takaaki Koga, Tomoki Machida

Abstract: The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba… ▽ More The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained-Ge is a purely cubic-Rashba-system, which is consistent with the spin angular momentum mj = +-3/2 nature of the HH wave function. △ Less

Submitted 7 August, 2014; v1 submitted 5 August, 2014; originally announced August 2014.

Comments: To be published in Phys. Rev. Lett

Radio frequency occupancy state control of a single nanowire quantum dot

Authors: Matthias Weiß, Florian J. R. Schülein, Jörg B. Kinzel, Michael Heigl, Daniel Rudolph, Max Bichler, Gerhard Abstreiter, Jonathan J. Finley, Achim Wixforth, Gregor Koblmüller, Hubert J. Krenner

Abstract: The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of a GaAs-AlGaAs core-shell nanowire. As we tune the time at which carriers are photogenerated during the acoustic cycle, we find pronounced intensity o… ▽ More The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of a GaAs-AlGaAs core-shell nanowire. As we tune the time at which carriers are photogenerated during the acoustic cycle, we find pronounced intensity oscillations of neutral and negatively charged excitons. At high acoustic power levels these oscillations become anticorrelated which enables direct acoustic programming of the dot's charge configuration, emission intensity and emission wavelength. Numerical simulations confirm that the observed modulations arise from acoustically controlled modulations of the electron and electron-hole-pair concentrations at the position of the quantum dot. △ Less

Submitted 23 May, 2014; v1 submitted 11 April, 2014; originally announced April 2014.

Comments: Revised manuscript, 12 pages, submitted to J. Phys. D as a contribution in a Special Issue on Nanowires

Journal ref: J. Phys. D: Appl. Phys. 47, 394011 (2014)

All optical quantum control of a spin-quantum state and ultrafast transduction into an electric current

Authors: K. Müller, T. Kaldewey, R. Ripszam, J. S. Wildmann, A. Bechtold, M. Bichler, G. Koblmüller, G. Abstreiter, J. J. Finley

Abstract: The ability to control and exploit quantum coherence and entanglement drives research across many fields ranging from ultra-cold quantum gases to spin systems in condensed matter. Transcending different physical systems, optical approaches have proven themselves to be particularly powerful, since they profit from the established toolbox of quantum optical techniques, are state-selective, contact-l… ▽ More The ability to control and exploit quantum coherence and entanglement drives research across many fields ranging from ultra-cold quantum gases to spin systems in condensed matter. Transcending different physical systems, optical approaches have proven themselves to be particularly powerful, since they profit from the established toolbox of quantum optical techniques, are state-selective, contact-less and can be extremely fast. Here, we demonstrate how a precisely timed sequence of monochromatic ultrafast (~2-5 ps) optical pulses, with a well defined polarisation can be used to prepare arbitrary superpositions of exciton spin states in a semiconductor quantum dot, achieve ultrafast control of the spin-wavefunction without an applied magnetic field and make high fidelity read-out the quantum state in an arbitrary basis simply by detecting a strong (~2-10$ pA) electric current flowing in an external circuit. The results obtained show that the combined quantum state preparation, control and read-out can be performed with a near-unity (>97%) fidelity. Our methods are fully applicable to other quantum systems and have strong potential for scaling to more complex systems such as molecules and spin-chains. △ Less

Submitted 12 December, 2012; originally announced December 2012.

Journal ref: Scientific Reports 3, 1906 (2013)

Fluctuation induced luminescence sidebands in the emission spectra of resonantly driven quantum dots

Authors: Fabrice P. Laussy, Vase Jovanov, Elena del Valle, Alexander Bechtold, Stephan Kapfinger, Kai Müller, Sebastian Koch, Arne Laucht, Thomas Eissfeller, Max Bichler, Gerhard Abstreiter, Jonathan J. Finley

Abstract: We describe how complex fluctuations of the local environment of an optically active quantum dot can leave rich fingerprints in its emission spectrum. A new feature, termed "Fluctuation Induced Luminescence" (FIL), is observed to arise from extremely rare fluctuation events that have a dramatic impact on the response of the system-so called "black swan" events. A quantum dissipative master equatio… ▽ More We describe how complex fluctuations of the local environment of an optically active quantum dot can leave rich fingerprints in its emission spectrum. A new feature, termed "Fluctuation Induced Luminescence" (FIL), is observed to arise from extremely rare fluctuation events that have a dramatic impact on the response of the system-so called "black swan" events. A quantum dissipative master equation formalism is developed to describe this effect phenomenologically. Experiments performed on single quantum dots subject to electrical noise show excellent agreement with our theory, producing the characteristic FIL sidebands. △ Less

Submitted 30 July, 2012; originally announced July 2012.

Comments: 17 pages, 4 figures

High fidelity optical preparation and coherent Larmor precession of a single hole in an InGaAs quantum dot molecule

Authors: K. Müller, A. Bechtold, C. Ruppert, C. Hautmann, J. S. Wildmann, T. Kaldewey, M. Bichler, H. J. Krenner, G. Abstreiter, M. Betz, J. J. Finley

Abstract: We employ ultrafast pump-probe spectroscopy with photocurrent readout to directly probe the dynamics of a single hole spin in a single, electrically tunable self-assembled quantum dot molecule formed by vertically stacking InGaAs quantum dots. Excitons with defined spin configurations are initialized in one of the two dots using circularly polarized picosecond pulses. The time-dependent spin confi… ▽ More We employ ultrafast pump-probe spectroscopy with photocurrent readout to directly probe the dynamics of a single hole spin in a single, electrically tunable self-assembled quantum dot molecule formed by vertically stacking InGaAs quantum dots. Excitons with defined spin configurations are initialized in one of the two dots using circularly polarized picosecond pulses. The time-dependent spin configuration is probed by the spin selective optical absorption of the resulting few Fermion complex. Taking advantage of sub-5 ps electron tunneling to an orbitally excited state of the other dot, we initialize a single hole spin with a purity of >96%, i.e., much higher than demonstrated in previous single dot experiments. Measurements in a lateral magnetic field monitor the coherent Larmor precession of the single hole spin with no observable loss of spin coherence within the ~300 ps hole lifetime. Thereby, the purity of the hole spin initialization remains unchanged for all investigated magnetic fields. △ Less

Submitted 26 April, 2012; originally announced April 2012.

Journal ref: Phys. Rev. B 85, 241306(R) (2012)

Few electron double quantum dot in an isotopically purified $^{28}$Si quantum well

Authors: Andreas Wild, Johannes Kierig, Jürgen Sailer, Joel Ager III, Eugene Haller, Gerhard Abstreiter, Stefan Ludwig, Dominique Bougeard

Abstract: We present a few electron double quantum dot (QD) device defined in an isotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5 \cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobility ever reported for a 2D electron system in $^{28}$Si. The residual concentration of $^{29}$Si nuclei in the $^{28}$Si QW is lower than $10^{3} ppm$, at the verge where the… ▽ More We present a few electron double quantum dot (QD) device defined in an isotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5 \cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobility ever reported for a 2D electron system in $^{28}$Si. The residual concentration of $^{29}$Si nuclei in the $^{28}$Si QW is lower than $10^{3} ppm$, at the verge where the hyperfine interaction is theoretically no longer expected to dominantly limit the $T_{2}$ spin dephasing time. We also demonstrate a complete suppression of hysteretic gate behavior and charge noise using a negatively biased global top gate. △ Less

Submitted 6 April, 2012; v1 submitted 15 February, 2012; originally announced February 2012.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 100, 143110 (2012)

Enlarged magnetic focusing radius of photoinduced ballistic currents

Authors: Markus Stallhofer, Christoph Kastl, Marcel Brändlein, Dieter Schuh, Werner Wegscheider, Jörg. P. Kotthaus, Gerhard Abstreiter, Alexander Holleitner

Abstract: We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The e… ▽ More We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The experimentally determined radius of the trajectories surprisingly exceeds the classical cyclotron value by far. Monte Carlo simulations suggest electron-electron scattering as the underlying reason. △ Less

Submitted 16 January, 2012; originally announced January 2012.

Comments: pdf-file includes both main article and supplementary information

Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms

Authors: V. Jovanov, T. Eissfeller, S. Kapfinger, E. C. Clark, F. Klotz, M. Bichler, J. G. Keizer, P. M. Koenraad, M. S. Brandt, G. Abstreiter, J. J. Finley

Abstract: Non-linear Zeeman splitting of neutral excitons is observed in composition engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic origin is explained. Eight-band k.p simulations, performed using realistic dot parameters extracted from cross-sectional scanning tunneling microscopy, reveal that a quadratic contribution to the Zeeman energy originates from a spin dependent mixing o… ▽ More Non-linear Zeeman splitting of neutral excitons is observed in composition engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic origin is explained. Eight-band k.p simulations, performed using realistic dot parameters extracted from cross-sectional scanning tunneling microscopy, reveal that a quadratic contribution to the Zeeman energy originates from a spin dependent mixing of heavy and light hole orbital states in the dot. The dilute In-composition (x<0.35) and large lateral size (40-50 nm) of the quantum dots investigated is shown to strongly enhance the non-linear excitonic Zeeman gap, providing a blueprint to enhance such magnetic non-linearities via growth engineering. △ Less

Submitted 12 December, 2011; originally announced December 2011.

Journal ref: Phys. Rev. B 85, 165433 (2012)

Electrical control of inter-dot electron tunneling in a quantum dot molecule

Authors: K. Müller, A. Bechtold, C. Ruppert, M. Zecherle, G. Reithmaier, M. Bichler, H. J. Krenner, G. Abstreiter, A. W. Holleitner, J. M. Villas-Bôas, J. J. Finley

Abstract: We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe spectrum due to Coulomb interactions between the photo-generated charge carriers. By tuning the relative energy of the orbital states in the two dots and monitorin… ▽ More We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe spectrum due to Coulomb interactions between the photo-generated charge carriers. By tuning the relative energy of the orbital states in the two dots and monitoring the temporal evolution of the pump-probe spectra the electron and hole tunneling times are separately measured and resonant tunneling between the two dots is shown to be mediated both by elastic and inelastic processes. Ultrafast (< 5 ps) inter-dot tunneling is shown to occur over a surprisingly wide bandwidth, up to ~8 meV, reflecting the spectrum of exciton-acoustic phonon coupling in the system. △ Less

Submitted 17 April, 2012; v1 submitted 14 November, 2011; originally announced November 2011.

Journal ref: Phys. Rev. Lett. 108, 197402 (2012)

Direct observation of metastable hot trions in an individual quantum dot

Authors: Vase Jovanov, Stephan Kapfinger, Gerhard Abstreiter, Jonathan J. Finley

Abstract: Magneto photoluminescence and excitation spectroscopy are used to probe the excited state spectrum of negatively charged trions in a InGaAs quantum dot. A single dot optical charging device allows us to selectively prepare specific few (1e, 2e) electron states and stabilize hot trions against decay via electron tunnelling from excited orbital states. The spin structure of the excited state results… ▽ More Magneto photoluminescence and excitation spectroscopy are used to probe the excited state spectrum of negatively charged trions in a InGaAs quantum dot. A single dot optical charging device allows us to selectively prepare specific few (1e, 2e) electron states and stabilize hot trions against decay via electron tunnelling from excited orbital states. The spin structure of the excited state results in the formation of metastable trions with strong optical activity that are directly observed in luminescence. Excitation spectroscopy is employed to map the excited singlet and triplet states of the two electron wavefunction and fine structure splittings are measured for the lowest lying and excited orbital states. Magneto-optical measurements allow us to compare the g-factors and diamagnetic response of different trion states. △ Less

Submitted 17 October, 2011; originally announced October 2011.

A Correlation between the Emission Intensity of Self-Assembled Germanium Islands and the Quality Factor of Silicon Photonic Crystal Nanocavities

Authors: N. Hauke, S. Lichtmannecker, T. Zabel, F. P. Laussy, A. Laucht, M. Kaniber, D. Bougeard, G. Abstreiter, J. J. Finley, Y. Arakawa

Abstract: We present a comparative micro-photoluminescence study of the emission intensity of self-assembled germanium islands coupled to the resonator mode of two-dimensional silicon photonic crystal defect nanocavities. The emission intensity is investigated for cavity modes of L3 and Hexapole cavities with different cavity quality factors. For each of these cavities many nominally identical samples are p… ▽ More We present a comparative micro-photoluminescence study of the emission intensity of self-assembled germanium islands coupled to the resonator mode of two-dimensional silicon photonic crystal defect nanocavities. The emission intensity is investigated for cavity modes of L3 and Hexapole cavities with different cavity quality factors. For each of these cavities many nominally identical samples are probed to obtain reliable statistics. As the quality factor increases we observe a clear decrease in the average mode emission intensity recorded under comparable optical pum** conditions. This clear experimentally observed trend is compared with simulations based on a dissipative master equation approach that describes a cavity weakly coupled to an ensemble of emitters. We obtain evidence that reabsorption of photons emitted into the cavity mode is responsible for the observed trend. In combination with the observation of cavity linewidth broadening in power dependent measurements, we conclude that free carrier absorption is the limiting effect for the cavity mediated light enhancement under conditions of strong pum**. △ Less

Submitted 22 March, 2011; v1 submitted 19 March, 2011; originally announced March 2011.

Comments: 8 pages, 5 figures

Excited State Quantum Couplings and Optical Switching of an Artificial Molecule

Authors: K. Müller, G. Reithmaier, E. C. Clark, V. Jovanov, M. Bichler, H. J. Krenner, M. Betz, G. Abstreiter, J. J. Finley

Abstract: We optically probe the spectrum of ground and excited state transitions of an individual, electrically tunable self-assembled quantum dot molecule. Photocurrent absorption measurements show that the spatially direct neutral exciton transitions in the upper and lower dots are energetically separated by only ~2 meV. Excited state transitions ~8-16 meV to higher energy exhibit pronounced anticrossing… ▽ More We optically probe the spectrum of ground and excited state transitions of an individual, electrically tunable self-assembled quantum dot molecule. Photocurrent absorption measurements show that the spatially direct neutral exciton transitions in the upper and lower dots are energetically separated by only ~2 meV. Excited state transitions ~8-16 meV to higher energy exhibit pronounced anticrossings as the electric field is tuned due to the formation of hybridized electron states. We show that the observed excited state transitions occur between these hybridized electronic states and different hole states in the upper dot. By simultaneously pum** two different excited states with two laser fields we demonstrate a strong (88% on-off contrast) laser induced switching of the optical response. The results represent an electrically tunable, discrete coupled quantum system with a conditional optical response. △ Less

Submitted 24 June, 2011; v1 submitted 15 March, 2011; originally announced March 2011.

Journal ref: Phys. Rev. B 84, 081302(R) (2011)

Shape control of QDs studied by cross-sectional scanning tunneling microscopy

Authors: J. G. Keizer, M. Bozkurt, J. Bocquel, P. M. Koenraad, T. Mano, T. Noda, K. Sakoda, E. C. Clark, M. Bichler, G. Abstreiter, J. J. Finley, W. Lu, T. Rohel, H. Folliot, N. Bertru

Abstract: In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thicknes… ▽ More In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thickness of the first cap** layer. Concerning the technique of antimony cap** we show that the surfactant properties of Sb result in the preservation of the shape of strained InAs/InP QDs during overgrowth. This could be achieved by both a growth interrupt under Sb flux and cap** with a thin GaAsSb layer prior to overgrowth of the uncapped QDs. The technique of droplet epitaxy was investigated by a structural analysis of strain free GaAs/AlGaAs QDs. We show that the QDs have a Gaussian shape, that the WL is less than 1 bilayer thick, and that minor intermixing of Al with the QDs takes place. △ Less

Submitted 15 November, 2010; originally announced November 2010.

Comments: 7 pages, 10 figures

Interplay between the electrical transport properties of GeMn thin films and Ge substrates

Authors: N. Sircar, S. Ahlers, C. Majer, G. Abstreiter, D. Bougeard

Abstract: We present evidence that electrical transport studies of epitaxial p-type GeMn thin films fabricated on high resistivity Ge substrates are severely influenced by parallel conduction through the substrate, related to the large intrinsic conductivity of Ge due to its small bandgap. Anomalous Hall measurements and large magneto resistance effects are completely understood by taking a dominating subst… ▽ More We present evidence that electrical transport studies of epitaxial p-type GeMn thin films fabricated on high resistivity Ge substrates are severely influenced by parallel conduction through the substrate, related to the large intrinsic conductivity of Ge due to its small bandgap. Anomalous Hall measurements and large magneto resistance effects are completely understood by taking a dominating substrate contribution as well as the measurement geometry into account. It is shown that substrate conduction persists also for well conducting, degenerate, p-type thin films, giving rise to an effective two-layer conduction scheme. Using n-type Ge substrates, parallel conduction through the substrate can be reduced for the p-type epi-layers, as a consequence of the emerging pn-interface junction. GeMn thin films fabricated on these substrates exhibit a negligible magneto resistance effect. Our study underlines the importance of a thorough characterization and understanding of possible substrate contributions for electrical transport studies of GeMn thin films. △ Less

Submitted 5 November, 2010; originally announced November 2010.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. B 83, 125306 (2011)

Probing spin relaxation in an individual InGaAs quantum dot using a single electron optical spin memory device

Authors: D. Heiss, V. Jovanov, F. Klotz, D. Rudolph, M. Bichler, G. Abstreiter, M. S. Brandt, J. J. Finley

Abstract: We demonstrate all optical electron spin initialization, storage and readout in a single self-assembled InGaAs quantum dot. Using a single dot charge storage device we monitor the relaxation of a single electron over long timescales exceeding 40μs. The selective generation of a single electron in the quantum dot is performed by resonant optical excitation and subsequent partial exciton ionization;… ▽ More We demonstrate all optical electron spin initialization, storage and readout in a single self-assembled InGaAs quantum dot. Using a single dot charge storage device we monitor the relaxation of a single electron over long timescales exceeding 40μs. The selective generation of a single electron in the quantum dot is performed by resonant optical excitation and subsequent partial exciton ionization; the hole is removed from the quantum dot whilst the electron remains stored. When subject to a magnetic field applied in Faraday geometry, we show how the spin of the electron can be prepared with a polarization up to 65% simply by controlling the voltage applied to the gate electrode. After generation, the electron spin is stored in the quantum dot before being read out using an all optical implementation of spin to charge conversion technique, whereby the spin projection of the electron is mapped onto the more robust charge state of the quantum dot. After spin to charge conversion, the charge state of the dot is repeatedly tested by pum** a luminescence recycling transition to obtain strong readout signals. In combination with spin manipulation using fast optical pulses or microwave pulses, this provides an ideal basis for probing spin coherence in single self-assembled quantum dots over long timescales and develo** optimal methods for coherent spin control. △ Less

Submitted 1 September, 2010; originally announced September 2010.

Strong electrically tunable exciton g-factors in an individual quantum dots due to hole orbital angular momentum quenching

Authors: V. Jovanov, T. Eissfeller, S. Kapfinger, E. C. Clark, F. Klotz, G. Abstreiter, J. J. Finley

Abstract: Strong electrically tunable exciton g-factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight band k.p simulations quantitatively account for our observations, simultaneously reproducing the exciton transition energy, DC Stark shift, diamagnetic shift and g-factor tunability for model dots with the measured size… ▽ More Strong electrically tunable exciton g-factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight band k.p simulations quantitatively account for our observations, simultaneously reproducing the exciton transition energy, DC Stark shift, diamagnetic shift and g-factor tunability for model dots with the measured size and a comparatively low In-composition of x(In)~35% near the dot apex. We show that the observed g-factor tunability is dominated by the hole, the electron contributing only weakly. The electric field induced perturbation of the hole wavefunction is shown to impact upon the g-factor via orbital angular momentum quenching, the change of the In:Ga composition inside the envelope function playing only a minor role. Our results provide design rules for growing self-assembled quantum dots for electrical spin manipulation via electrical g-factor modulation. △ Less

Submitted 31 August, 2010; v1 submitted 19 August, 2010; originally announced August 2010.

Hartree simulations of coupled quantum Hall edge states in corner-overgrown heterostructures

Authors: Lucia Steinke, Patrick Cantwell, Eric Stach, Dieter Schuh, Anna Fontcuberta i Morral, Max Bichler, Gerhard Abstreiter, Matthew Grayson

Abstract: The electronic states in a corner-overgrown bent GaAs/AlGaAs quantum well heterostructure are studied with numerical Hartree simulations. Transmission electron microscope pictures of the junction justify the sharp-corner assumption. In a tilted magnetic field both facets of the bent quantum well are brought to a quantum Hall (QH) state, and the corner hosts an unconventional hybrid system of two c… ▽ More The electronic states in a corner-overgrown bent GaAs/AlGaAs quantum well heterostructure are studied with numerical Hartree simulations. Transmission electron microscope pictures of the junction justify the sharp-corner assumption. In a tilted magnetic field both facets of the bent quantum well are brought to a quantum Hall (QH) state, and the corner hosts an unconventional hybrid system of two coupled counter-propagating quantum Hall edges and an additional one-dimensional accumulation wire. A subsystems model is introduced, whereby the total hybrid dispersion and wavefunctions are explained in terms of the constituent QH edge- and accumulation wire-subsystem dispersions and wavefunctions. At low magnetic fields, orthonormal basis wavefunctions of the hybrid system can be accurately estimated by projecting out the lowest bound state of the accumulation wire from the edge state wavefunctions. At high magnetic fields, the coupling between the three subsystems increases as a function of the applied magnetic field, in contrast to coplanar barrier-junctions of QH systems, leading to large anticrossing gaps between the subsystem dispersions. These results are discussed in terms of previously reported experimental data on bent quantum Hall systems. △ Less

Submitted 16 August, 2010; originally announced August 2010.

Comments: 11 pages, 8 figures

Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure

Authors: A. Wild, J. Sailer, J. Nützel, G. Abstreiter, S. Ludwig, D. Bougeard

Abstract: We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on t… ▽ More We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain-engineering is proven not to affect the stable operation of our device as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe heterostructures for quantum information processing. △ Less

Submitted 14 July, 2010; originally announced July 2010.

Comments: 20 pages, 8 figures

Asymmetric optical nuclear spin pum** in a single uncharged quantum dot

Authors: F. Klotz, V. Jovanov, J. Kierig, E. C. Clark, M. Bichler, G. Abstreiter, M. S. Brandt, J. J. Finley, H. Schwager, G. Giedke

Abstract: A highly asymmetric dynamic nuclear spin pum** is observed in a single self assembled InGaAs quantum dot subject to resonant optical pum** of the neutral exciton transition leading to a large maximum polarization of 54%. This dynamic nuclear polarization is found to be much stronger following pum** of the higher energy Zeeman state. Time-resolved measurements allow us to directly monitor the… ▽ More A highly asymmetric dynamic nuclear spin pum** is observed in a single self assembled InGaAs quantum dot subject to resonant optical pum** of the neutral exciton transition leading to a large maximum polarization of 54%. This dynamic nuclear polarization is found to be much stronger following pum** of the higher energy Zeeman state. Time-resolved measurements allow us to directly monitor the buildup of the nuclear spin polarization in real time and to quantitatively study the dynamics of the process. A strong dependence of the observed dynamic nuclear polarization on the applied magnetic field is found, with resonances in the pum** efficiency being observed for particular magnetic fields. We develop a model that fully accounts for the observed behaviour, where the pum** of the nuclear spin system is due to hyperfine-mediated spin flip transitions between the states of the neutral exciton manifold. △ Less

Submitted 29 September, 2010; v1 submitted 13 July, 2010; originally announced July 2010.

Comments: published version; 4+ pages, 3 figures (eps)

Journal ref: Phys. Rev. B 82, 121307(R) (2010)

Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond

Authors: M. Stallhofer, M. Seifert, M. Hauf, G. Abstreiter, M. Stutzmann, J. Garrido, A. W. Holleitner

Abstract: We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A photoconductive gain of the hole conductivity across the barrier is measured for sub-bandgap illumination. The findings are consistent with photogenerated elec… ▽ More We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A photoconductive gain of the hole conductivity across the barrier is measured for sub-bandgap illumination. The findings are consistent with photogenerated electrons being trapped in defect levels within the barrier. We discuss the spatial and energetic characteristics of the optoelectronic phenomena, as well as possible photocurrent effects. △ Less

Submitted 22 April, 2010; originally announced April 2010.

All-optical Coherent Control of Electrical Currents in Single GaAs Nanowires

Authors: C. Ruppert, S. Thunich, G. Abstreiter, A. Fontcuberta i Morral, A. W. Holleitner, M. Betz

Abstract: A phase-stable superposition of femtosecond pulses and their second harmonic induces ultrashort microampere current bursts in single unbiased GaAs nanowires. Current injection relies on quantum interference of one- and two-photon absorption pathways. A phase-stable superposition of femtosecond pulses and their second harmonic induces ultrashort microampere current bursts in single unbiased GaAs nanowires. Current injection relies on quantum interference of one- and two-photon absorption pathways. △ Less

Submitted 22 February, 2010; originally announced February 2010.

Comments: 2 pages, 1 figure

Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities

Authors: N. Hauke, T. Zabel, K. Mueller, M. Kaniber, A. Laucht, D. Bougeard, G. Abstreiter, J. J. Finley, Y. Arakawa

Abstract: We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from crystalline silicon at ~1.10 eV we observe a broad defect band luminescence from ~1.05-1.09 eV. Spatially resolved spectroscopy demonstrates that this defect band is p… ▽ More We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from crystalline silicon at ~1.10 eV we observe a broad defect band luminescence from ~1.05-1.09 eV. Spatially resolved spectroscopy demonstrates that this defect band is present only in the region where air-holes have been etched during the fabrication process. Detectable emission from the cavity mode persists up to room-temperature, in strong contrast the background emission vanishes for T > 150 K. An Ahrrenius type analysis of the temperature dependence of the luminescence signal recorded either in-resonance with the cavity mode, or weakly detuned, suggests that the higher temperature stability may arise from an enhanced internal quantum efficiency due to the Purcell-effect. △ Less

Submitted 4 December, 2009; originally announced December 2009.

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects

Authors: I. Zardo, S. Conesa-Boj, F. Peiro, J. R. Morante, J. Arbiol, E. Uccelli, G. Abstreiter, A. Fontcuberta i Morral

Abstract: Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization ar… ▽ More Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm-1 of the E1(TO). The transversal optical mode related to the wurtzite structure, E2H, is measured between 254 and 256 cm-1, depending on the wurtzite content. The azymutal dependence of E2H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E1(TO) and E2H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on {110} facets is presented. △ Less

Submitted 7 December, 2009; v1 submitted 27 October, 2009; originally announced October 2009.

Comments: 28 pages, 12 figures. to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 80, 245324 (2009)

Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires

Authors: D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Rossler, F. Peiro, J. R. Morante, L. Samuelson, G. Abstreiter, A. Fontcuberta i Morral

Abstract: The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.5… ▽ More The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band-offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms. △ Less

Submitted 9 July, 2009; originally announced July 2009.

Comments: 24 pages

Journal ref: Phys. Rev. B 80, 245325 (2009)

Photocurrent and Photoconductance Properties of a GaAs Nanowire

Authors: S. Thunich, L. Prechtel, D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral, A. W. Holleitner

Abstract: We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE), and they are electrically contacted by a focused ion beam (FIB) deposition technique. The observed photocurrent is generated at the Schottky contacts between the nanowire and metal source-drain electrodes, while the observed photoco… ▽ More We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE), and they are electrically contacted by a focused ion beam (FIB) deposition technique. The observed photocurrent is generated at the Schottky contacts between the nanowire and metal source-drain electrodes, while the observed photoconductance signal can be explained by a photogating effect induced by optically generated charge carriers located at the surface of the nanowire. Both optoelectronic effects are sensitive to the polarization of the exciting laser field, enabling polarization dependent photodetectors. △ Less

Submitted 22 May, 2009; originally announced May 2009.

A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

Authors: J. Sailer, V. Lang, G. Abstreiter, G. Tsuchiya, K. M. Itoh, J. W. Ager III, E. E. Haller, D. Kupidura, D. Harbusch, S. Ludwig, D. Bougeard

Abstract: We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibit… ▽ More We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density of 4.6E11 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment. △ Less

Submitted 16 January, 2009; originally announced January 2009.

Comments: 8 pages, 3 figures

Journal ref: Phys. Status Solidi RRL 3, No. 2, 61-63 (2009)

Selective Optical Charge Generation, Storage and Readout in a Single Self Assembled Quantum Dot

Authors: D. Heiss, V. Jovanov, M. Caesar, M. Bichler, G. Abstreiter, J. J. Finley

Abstract: We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable optical readout of the charge occupancy using a time gated photoluminescence technique. This device enables us to directly investigate the electric field dependen… ▽ More We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable optical readout of the charge occupancy using a time gated photoluminescence technique. This device enables us to directly investigate the electric field dependent tunneling escape dynamics of electrons at high electric fields over timescales up to 4 us. The results demonstrate that such structures and measurement techniques can be used to investigate charge and spin dynamics in single quantum dots over microsecond timescales. △ Less

Submitted 20 January, 2009; v1 submitted 16 December, 2008; originally announced December 2008.

Comments: Accepted for publication in APL

Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass

Authors: S. Dasgupta, S. Birner, C. Knaak, M. Bichler, A. Fontcuberta i Morral, G. Abstreiter, M. Grayson

Abstract: We studied a do** series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 Åwide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths $W$ greater than 53 Å. Below this, double-valley occupation is predicted such tha… ▽ More We studied a do** series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 Åwide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths $W$ greater than 53 Å. Below this, double-valley occupation is predicted such that the longitudinal mass axes are collinear. We observed mobility anisotropy in the electronic transport along the crystallographic directions in the ratio of 2.8, attributed to the mass anisotropy as well as anisotropic scattering of the electrons in the X-valley of AlAs. △ Less

Submitted 23 July, 2008; originally announced July 2008.

Journal ref: APL 93, 132102 (2008)

Size dependence of the bulk and surface phonon modes of gallium arsenide nanowires as measured by Raman Spectroscopy

Authors: Dance Spirkoska, Gerhard Abstreiter, Anna Fontcuberta I Morral

Abstract: Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowires ensembles were measured. The small line width of the optical phonon modes agree with an excellent crystalline quality. A surface phonon mode was also revealed, as a shoulder at lower fr… ▽ More Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowires ensembles were measured. The small line width of the optical phonon modes agree with an excellent crystalline quality. A surface phonon mode was also revealed, as a shoulder at lower frequencies of the longitudinal optical mode. In agreement with the theory, the surface mode shifts to lower wave numbers when the diameter of the nanowires is decreased or the environment dielectric constant increased. △ Less

Submitted 23 April, 2008; originally announced April 2008.

Comments: 4 pages, 3 figures

A Charge and Spin Readout Scheme For Single Self-Assembled Quantum Dots

Authors: D. Heiss, V. Jovanov, M. Bichler, G. Abstreiter, J. J. Finley

Abstract: We propose an all optical spin initialization and readout concept for single self assembled quantum dots and demonstrate its feasibility. Our approach is based on a gateable single dot photodiode structure that can be switched between charge and readout mode. After optical electron generation and storage, we propose to employ a spin-conditional absorption of a circularly polarized light pulse tu… ▽ More We propose an all optical spin initialization and readout concept for single self assembled quantum dots and demonstrate its feasibility. Our approach is based on a gateable single dot photodiode structure that can be switched between charge and readout mode. After optical electron generation and storage, we propose to employ a spin-conditional absorption of a circularly polarized light pulse tuned to the single negatively charged exciton transition to convert the spin information of the resident electron to charge occupancy. Switching the device to the charge readout mode then allows us to probe the charge state of the quantum dot (1e, 2e) using non-resonant luminescence. The spin orientation of the resident electron is then reflected by the photoluminescence yield of doubly and singly charged transitions in the quantum dot. To verify the feasibility of this spin readout concept, we have applied time gated photoluminescence to confirm that selective optical charging and efficient non perturbative measurement of the charge state can be performed on the same dot. The results show that, by switching the electric field in the vicinity of the quantum dot, the charging rate can be switched between a regime of efficient electron generation and a readout regime, where the charge occupancy and, therefore, the spin state of the dot can be tested via PL over millisecond timescales, without altering it. △ Less

Submitted 2 April, 2008; originally announced April 2008.

Comments: 20 Pages, 6 Figures, submitted to Phys. Rev. B

Nanometer-scale sharpness in corner-overgrown heterostructures

Authors: L. Steinke, P. Cantwell, D. Zakharov, E. Stach, N. J. Zaluzec, A. Fontcuberta i Morral, M. Bichler, G. Abstreiter, M. Grayson

Abstract: A corner-overgrown GaAs/AlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile of 3.5 nm width. In the AlGaAs layers we observe self-ordered diagonal stripes, precipitating exactly at the corner, which are regions of increased Al content measured by an XEDS analysis. A quantit… ▽ More A corner-overgrown GaAs/AlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile of 3.5 nm width. In the AlGaAs layers we observe self-ordered diagonal stripes, precipitating exactly at the corner, which are regions of increased Al content measured by an XEDS analysis. A quantitative model for self-limited growth is adapted to the present case of faceted MBE growth, and the corner sharpness is discussed in relation to quantum confined structures. We note that MBE corner overgrowth maintains nm-sharpness even after microns of growth, allowing the realization of corner-shaped nanostructures. △ Less

Submitted 14 July, 2008; v1 submitted 27 March, 2008; originally announced March 2008.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 93, 193117, (2008)

Hop** conduction in strongly insulating states of a diffusive bent quantum Hall junction

Authors: L. Steinke, D. Schuh, M. Bichler, G. Abstreiter, M. Grayson

Abstract: Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor… ▽ More Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor hop** at higher T to variable-range hop** conduction at lower T. The base temperature electric field dependence is consistent with 1D variable-range hop** conduction. We observe almost identical behavior at filling factors 1 and 2, and discuss how the bent quantum Hall junction conductance appears to be independent of the bulk spin state. Various models of 1D variable-range hop** which either include or ignore interactions are compared, all of which are consistent with the basic model of disorder coupled counter-propagating quantum Hall edges. △ Less

Submitted 14 July, 2008; v1 submitted 29 February, 2008; originally announced February 2008.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 77, 235319 (2008)

All-electric detectors of the polarization state of terahertz laser radiation (extended version)

Authors: S. D. Ganichev, W. Weber, J. Kiermaier, S. N. Danilov, D. Schuh, W. Wegscheider, Ch. Gerl, W. Prettl, D. Bougeard, G. Abstreiter

Abstract: Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the ellipticity of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The ph… ▽ More Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the ellipticity of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have sub-nanosecond time constants at room temperature making a high time resolution of the polarization detectors possible. △ Less

Submitted 6 May, 2008; v1 submitted 28 September, 2007; originally announced September 2007.

Subnanosecond Ellipticity Detector for Laser Radiation (second version, extended)

Authors: S. D. Ganichev, W. Weber, J. Kiermaier, S. N. Danilov, P. Olbrich, D. Schuh, W. Wegscheider, D. Bougeard, G. Abstreiter, W. Prettl

Abstract: Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the Stokes parameters of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry.… ▽ More Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the Stokes parameters of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have nanoseconds time constants at room temperature making a high time resolution of the polarization detectors possible. △ Less

Submitted 18 March, 2008; v1 submitted 31 July, 2007; originally announced July 2007.

Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

Authors: S. Dasgupta, C. Knaak, J. Moser, M. Bichler, S. F. Roth, A. Fontcuberta i Morral, G. Abstreiter, M. Grayson

Abstract: A do** series of AlAs (001) quantum wells with Si delta-modulation do** on both sides reveals different dark and post-illumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep binding energy of Delta_DK = 65.2 meV for Si-donors in the dark. Persistent photoconductivity (PPC) is… ▽ More A do** series of AlAs (001) quantum wells with Si delta-modulation do** on both sides reveals different dark and post-illumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep binding energy of Delta_DK = 65.2 meV for Si-donors in the dark. Persistent photoconductivity (PPC) is observed upon illumination, with higher saturation density indicating shallow post-illumination donor binding energy. The photoconductivity is thermally activated, with 4 K illumination requiring post-illumination annealing to T = 30 K to saturate the PPC. Dark and post-illumination do** efficiencies are reported. △ Less

Submitted 18 September, 2007; v1 submitted 12 July, 2007; originally announced July 2007.

Comments: The values of binding energy changed from previous versions because of a better understanding for the dielectric permittivity. Also, the Gamma - X donor states are better explained

Journal ref: APL 91, 142120 (2007)

Observation of extremely slow hole spin relaxation in self-assembled quantum dots

Authors: D. Heiss, S. Schaeck, H. Huebl, M. Bichler, G. Abstreiter, J. J. Finley, D. V. Bulaev, Daniel Loss

Abstract: We report the measurement of extremely slow hole spin relaxation dynamics in small ensembles of self-assembled InGaAs quantum dots. Individual spin orientated holes are optically created in the lowest orbital state of each dot and read out after a defined storage time using spin memory devices. The resulting luminescence signal exhibits a pronounced polarization memory effect that vanishes for l… ▽ More We report the measurement of extremely slow hole spin relaxation dynamics in small ensembles of self-assembled InGaAs quantum dots. Individual spin orientated holes are optically created in the lowest orbital state of each dot and read out after a defined storage time using spin memory devices. The resulting luminescence signal exhibits a pronounced polarization memory effect that vanishes for long storage times. The hole spin relaxation dynamics are measured as a function of external magnetic field and lattice temperature. We show that hole spin relaxation can occur over remarkably long timescales in strongly confined quantum dots (up to ~270 us), as predicted by recent theory. Our findings are supported by calculations that reproduce both the observed magnetic field and temperature dependencies. The results suggest that hole spin relaxation in strongly confined quantum dots is due to spin orbit mediated phonon scattering between Zeeman levels, in marked contrast to higher dimensional nanostructures where it is limited by valence band mixing. △ Less

Submitted 25 February, 2008; v1 submitted 10 May, 2007; originally announced May 2007.

Comments: Published by Physical Review B

Journal ref: Phys. Rev. B 76, 241306(R) (2007)

Novel metallic and insulating states at a bent quantum Hall junction

Authors: M. Grayson, L. Steinke, D. Schuh, M. Bichler, L. Hoeppel, J. Smet, K. v. Klitzing, D. K. Maude, G. Abstreiter

Abstract: A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is str… ▽ More A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted. △ Less

Submitted 6 February, 2007; v1 submitted 13 January, 2007; originally announced January 2007.

Comments: 5 pages, 4 figures, text + figs revised for clarity

Journal ref: Phys. Rev. B 76, 201304(R) (2007)

Clustering in a precipitate free GeMn magnetic semiconductor

Authors: D. Bougeard, S. Ahlers, A. Trampert, N. Sircar, G. Abstreiter

Abstract: We present the first study relating structural parameters of precipitate free Ge0.95Mn0.05 films to magnetisation data. Nanometer sized clusters - areas with increased Mn content on substitutional lattice sites compared to the host matrix - are detected in transmission electron microscopy (TEM) analysis. The films show no overall spontaneous magnetisation at all down to 2K. The TEM and magnetisa… ▽ More We present the first study relating structural parameters of precipitate free Ge0.95Mn0.05 films to magnetisation data. Nanometer sized clusters - areas with increased Mn content on substitutional lattice sites compared to the host matrix - are detected in transmission electron microscopy (TEM) analysis. The films show no overall spontaneous magnetisation at all down to 2K. The TEM and magnetisation results are interpreted in terms of an assembly of superparamagnetic moments develo** in the dense distribution of clusters. Each cluster individually turns ferromagnetic below an ordering temperature which depends on its volume and Mn content. △ Less

Submitted 9 November, 2006; originally announced November 2006.

Comments: accepted for publication in Phys. Rev. Lett. (2006). High resolution images ibidem

Magnetic and structural properties of GeMn films: precipitation of intermetallic nanomagnets

Authors: S. Ahlers, D. Bougeard, N. Sircar, G. Abstreiter, A. Trampert, M. Opel, R. Gross

Abstract: We present a comprehensive study relating the nanostructure of Ge_0.95Mn_0.05 films to their magnetic properties. The formation of ferromagnetic nanometer sized inclusions in a defect free Ge matrix fabricated by low temperature molecular beam epitaxy is observed down to substrate temperatures T_S as low as 70 deg. Celsius. A combined transmission electron microscopy (TEM) and electron energy-lo… ▽ More We present a comprehensive study relating the nanostructure of Ge_0.95Mn_0.05 films to their magnetic properties. The formation of ferromagnetic nanometer sized inclusions in a defect free Ge matrix fabricated by low temperature molecular beam epitaxy is observed down to substrate temperatures T_S as low as 70 deg. Celsius. A combined transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS) analysis of the films identifies the inclusions as precipitates of the ferromagnetic compound Mn_5Ge_3. The volume and amount of these precipitates decreases with decreasing T_S. Magnetometry of the films containing precipitates reveals distinct temperature ranges: Between the characteristic ferromagnetic transition temperature of Mn_5Ge_3 at approximately room temperature and a lower, T_S dependent blocking temperature T_B the magnetic properties are dominated by superparamagnetism of the Mn_5Ge_3 precipitates. Below T_B, the magnetic signature of ferromagnetic precipitates with blocked magnetic moments is observed. At the lowest temperatures, the films show features characteristic for a metastable state. △ Less

Submitted 9 November, 2006; originally announced November 2006.

Comments: accepted for publication in Phys. Rev. B 74 (01.12.2006). High resolution images ibidem

Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule

Authors: T. Nakaoka, H. J. Krenner, E. C. Clark, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, J. J. Finley

Abstract: We probe acoustic phonon mediated relaxation between tunnel coupled exciton states in an individual quantum dot molecule in which the inter-dot quantum coupling and energy separation between exciton states is continuously tuned using static electric field. Time resolved and temperature dependent optical spectroscopy are used to probe inter-level relaxation around the point of maximum coupling. T… ▽ More We probe acoustic phonon mediated relaxation between tunnel coupled exciton states in an individual quantum dot molecule in which the inter-dot quantum coupling and energy separation between exciton states is continuously tuned using static electric field. Time resolved and temperature dependent optical spectroscopy are used to probe inter-level relaxation around the point of maximum coupling. The radiative lifetimes of the coupled excitonic states can be tuned from ~2 ns to ~10 ns as the spatially direct and indirect character of the wavefunction is varied by detuning from resonance. Acoustic phonon mediated inter-level relaxation is shown to proceed over timescales comparable to the direct exciton radiative lifetime, indicative of a relaxation bottleneck for level spacings in the range $ΔE\$ ~3-6 meV. △ Less

Submitted 2 July, 2006; originally announced July 2006.

Comments: 6 pages, 4 figures, submitted for publication

Journal ref: Phys. Rev. B 74, 121305 (2006)

Optically Probing Spin and Charge Interactions in an Tunable Artificial Molecule

Authors: H. J. Krenner, E. C. Clark, T. Nakaoka, M. Bichler, C. Scheurer, G. Abstreiter, J. J. Finley

Abstract: We optically probe and electrically control a single artificial molecule containing a well defined number of electrons. Charge and spin dependent inter-dot quantum couplings are probed optically by adding a single electron-hole pair and detecting the emission from negatively charged exciton states. Coulomb and Pauli blockade effects are directly observed and hybridization and electrostatic charg… ▽ More We optically probe and electrically control a single artificial molecule containing a well defined number of electrons. Charge and spin dependent inter-dot quantum couplings are probed optically by adding a single electron-hole pair and detecting the emission from negatively charged exciton states. Coulomb and Pauli blockade effects are directly observed and hybridization and electrostatic charging energies are independently measured. The inter-dot quantum coupling is confirmed to be mediated predominantly by electron tunneling. Our results are in excellent accord with calculations that provide a complete picture of negative excitons and few electron states in quantum dot molecules. △ Less

Submitted 18 July, 2006; v1 submitted 28 April, 2006; originally announced April 2006.

Comments: shortened version: 6 pages, 3 figures, 1 table, to appear in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 97, 076403 (2006)

Calculation and spectroscopy of the Landau band structure at a thin and atomically precise tunneling barrier

Authors: Matthias Habl, Matthias Reinwald, Werner Wegscheider, Max Bichler, Gerhard Abstreiter

Abstract: Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the order of the magnetic length possess a complex Landau band structure in the vicinity of the line junction. The energy dispersion is obtained from an exact quantum-mechanical calculation of the single electron eigenstates for the coupled system by representing the wave functions as a superposition o… ▽ More Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the order of the magnetic length possess a complex Landau band structure in the vicinity of the line junction. The energy dispersion is obtained from an exact quantum-mechanical calculation of the single electron eigenstates for the coupled system by representing the wave functions as a superposition of parabolic cylinder functions. For orbit centers approaching the barrier, the separation of two subsequent Landau levels is reduced from the cyclotron energy to gaps which are much smaller. The position of the anticrossings increases on the scale of the cyclotron energy as the magnetic field is raised. In order to experimentally investigate a particular gap at different field strengths but under constant filling factor, a GaAs/AlGaAs heterostructure with a 52 Angstrom thick tunneling barrier and a gate electrode for inducing the two-dimensional electron systems was fabricated by the cleaved edge overgrowth method. The shift of the gaps is observed as a displacement of the conductance peaks on the scale of the filling factor. Besides this effect, which is explained within the picture of Landau level mixing for an ideal barrier, we report on signatures of quantum interferences at imperfections of the barrier which act as tunneling centers. The main features of the recent experiment of Yang, Kang et al. are reproduced and discussed for different gate voltages. Quasiperiodic oscillations, similar to the Aharonov Bohm effect at the quenched peak, are revealed for low magnetic fields before the onset of the regular conductance peaks. △ Less

Submitted 19 October, 2005; originally announced October 2005.

Comments: 8 pages, 10 figures, 1 table

Journal ref: Phys. Rev. B 73, 205305 (2006)

Recent advances in exciton based quantum information processing in quantum dot nanostructures

Authors: H. J. Krenner, S. Stufler, M. Sabathil, E. C. Clark, P. Ester, M. Bichler, G. Abstreiter, J. J. Finley, A. Zrenner

Abstract: Recent experimental developments in the field of semiconductor quantum dot spectroscopy will be discussed. First we report about single quantum dot exciton two-level systems and their coherent properties in terms of single qubit manipulations. In the second part we report on coherent quantum coupling in a prototype "two-qubit" system consisting of a vertically stacked pair of quantum dots. The i… ▽ More Recent experimental developments in the field of semiconductor quantum dot spectroscopy will be discussed. First we report about single quantum dot exciton two-level systems and their coherent properties in terms of single qubit manipulations. In the second part we report on coherent quantum coupling in a prototype "two-qubit" system consisting of a vertically stacked pair of quantum dots. The interaction can be tuned in such quantum dot molecule devices using an applied voltage as external parameter. △ Less

Submitted 8 July, 2005; v1 submitted 30 May, 2005; originally announced May 2005.

Comments: 37 pages, 15 figures, submitted to New Journal of Physics, focus issue on Solid State Quantum Information, added references

Journal ref: New Journal of Physics 7, 184 (2005)